SG10202000520QA - Shallow trench isolation (sti) chemical mechanical planarization (cmp) polishing with low abrasive concentration and a combination of chemical additives - Google Patents
Shallow trench isolation (sti) chemical mechanical planarization (cmp) polishing with low abrasive concentration and a combination of chemical additivesInfo
- Publication number
- SG10202000520QA SG10202000520QA SG10202000520QA SG10202000520QA SG10202000520QA SG 10202000520Q A SG10202000520Q A SG 10202000520QA SG 10202000520Q A SG10202000520Q A SG 10202000520QA SG 10202000520Q A SG10202000520Q A SG 10202000520QA SG 10202000520Q A SG10202000520Q A SG 10202000520QA
- Authority
- SG
- Singapore
- Prior art keywords
- sti
- cmp
- polishing
- combination
- trench isolation
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962796786P | 2019-01-25 | 2019-01-25 | |
US16/737,083 US11326076B2 (en) | 2019-01-25 | 2020-01-08 | Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with low abrasive concentration and a combination of chemical additives |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202000520QA true SG10202000520QA (en) | 2020-08-28 |
Family
ID=69191954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202000520QA SG10202000520QA (en) | 2019-01-25 | 2020-01-20 | Shallow trench isolation (sti) chemical mechanical planarization (cmp) polishing with low abrasive concentration and a combination of chemical additives |
Country Status (8)
Country | Link |
---|---|
US (1) | US11326076B2 (en) |
EP (1) | EP3686257B1 (en) |
JP (1) | JP6990261B2 (en) |
KR (1) | KR102382368B1 (en) |
CN (1) | CN111732896B (en) |
IL (1) | IL272143B2 (en) |
SG (1) | SG10202000520QA (en) |
TW (1) | TWI737133B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20230020073A1 (en) * | 2019-12-04 | 2023-01-19 | Versum Materials Us, Llc | High Oxide Film Removal Rate Shallow Trench (STI) Chemical Mechanical Planarization (CMP) Polishing |
CN116656244A (en) * | 2023-07-20 | 2023-08-29 | 包头天骄清美稀土抛光粉有限公司 | Chemical mechanical polishing composition for fin field effect transistor and preparation method thereof |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5876490A (en) | 1996-12-09 | 1999-03-02 | International Business Machines Corporatin | Polish process and slurry for planarization |
US5759917A (en) | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
US6491843B1 (en) | 1999-12-08 | 2002-12-10 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
US6964923B1 (en) | 2000-05-24 | 2005-11-15 | International Business Machines Corporation | Selective polishing with slurries containing polyelectrolytes |
JP2002110596A (en) | 2000-10-02 | 2002-04-12 | Mitsubishi Electric Corp | Polishing agent for semiconductor processing, dispersant used therefor, and method of manufacturing semiconductor device using the same polishing agent |
TWI228538B (en) | 2000-10-23 | 2005-03-01 | Kao Corp | Polishing composition |
US6540935B2 (en) | 2001-04-05 | 2003-04-01 | Samsung Electronics Co., Ltd. | Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same |
US6616514B1 (en) | 2002-06-03 | 2003-09-09 | Ferro Corporation | High selectivity CMP slurry |
US7514363B2 (en) * | 2003-10-23 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use |
KR100637772B1 (en) | 2004-06-25 | 2006-10-23 | 제일모직주식회사 | High Selectivity CMP slurry for STI Process in Semiconductor manufacture |
US7557875B2 (en) * | 2005-03-22 | 2009-07-07 | Industrial Technology Research Institute | High performance flexible display with improved mechanical properties having electrically modulated material mixed with binder material in a ratio between 6:1 and 0.5:1 |
WO2006119249A2 (en) | 2005-04-29 | 2006-11-09 | Brown University | Aerogels and methods of using the same for chemical mechanical planarization and for extracting metal ions |
JP2008244316A (en) | 2007-03-28 | 2008-10-09 | Fujifilm Corp | Polishing solution for metals, and polishing method |
WO2010139603A1 (en) | 2009-06-05 | 2010-12-09 | Basf Se | RASPBERRY-TYPE METAL OXIDE NANOSTRUCTURES COATED WITH CeO2 NANOPARTICLES FOR CHEMICAL MECHANICAL PLANARIZATION (CMP) |
US8778203B2 (en) | 2010-05-28 | 2014-07-15 | Clarkson University | Tunable polish rates by varying dissolved oxygen content |
JP5516184B2 (en) | 2010-07-26 | 2014-06-11 | 信越化学工業株式会社 | Method for producing synthetic quartz glass substrate |
EP2614121B1 (en) | 2010-09-08 | 2019-03-06 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices |
CN102337084B (en) | 2011-07-25 | 2014-04-09 | 郑州磨料磨具磨削研究所有限公司 | Grinding fluid for processing LED (light-emitting diode) substrate and preparation method thereof |
US9777192B2 (en) * | 2012-02-10 | 2017-10-03 | Basf Se | Chemical mechanical polishing (CMP) composition comprising a protein |
EP2826827B1 (en) * | 2013-07-18 | 2019-06-12 | Basf Se | CMP composition comprising abrasive particles containing ceria |
US9340706B2 (en) | 2013-10-10 | 2016-05-17 | Cabot Microelectronics Corporation | Mixed abrasive polishing compositions |
JP6584114B2 (en) * | 2015-03-30 | 2019-10-02 | ニッタ・ハース株式会社 | Polishing composition |
US10421890B2 (en) * | 2016-03-31 | 2019-09-24 | Versum Materials Us, Llc | Composite particles, method of refining and use thereof |
CN107011806A (en) * | 2017-04-27 | 2017-08-04 | 安徽智诚光学科技有限公司 | A kind of mobile phone liquid crystal touch control screen polishing agent and preparation method thereof |
JP2019050307A (en) * | 2017-09-11 | 2019-03-28 | 株式会社フジミインコーポレーテッド | Polishing method, and composition for polishing and method for manufacturing the same |
-
2020
- 2020-01-08 US US16/737,083 patent/US11326076B2/en active Active
- 2020-01-20 IL IL272143A patent/IL272143B2/en unknown
- 2020-01-20 SG SG10202000520QA patent/SG10202000520QA/en unknown
- 2020-01-21 TW TW109102146A patent/TWI737133B/en active
- 2020-01-23 KR KR1020200009082A patent/KR102382368B1/en active IP Right Grant
- 2020-01-24 JP JP2020010344A patent/JP6990261B2/en active Active
- 2020-01-24 EP EP20153580.4A patent/EP3686257B1/en active Active
- 2020-02-03 CN CN202010078744.0A patent/CN111732896B/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW202033688A (en) | 2020-09-16 |
US20200239735A1 (en) | 2020-07-30 |
CN111732896A (en) | 2020-10-02 |
IL272143A (en) | 2020-07-30 |
KR102382368B1 (en) | 2022-04-05 |
TWI737133B (en) | 2021-08-21 |
IL272143B2 (en) | 2023-08-01 |
CN111732896B (en) | 2022-11-04 |
JP6990261B2 (en) | 2022-01-12 |
IL272143B1 (en) | 2023-04-01 |
US11326076B2 (en) | 2022-05-10 |
EP3686257A1 (en) | 2020-07-29 |
EP3686257B1 (en) | 2022-01-19 |
KR20200092892A (en) | 2020-08-04 |
JP2020117709A (en) | 2020-08-06 |
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