SG10201911991YA - Heterostructure and method of fabrication - Google Patents

Heterostructure and method of fabrication

Info

Publication number
SG10201911991YA
SG10201911991YA SG10201911991YA SG10201911991YA SG10201911991YA SG 10201911991Y A SG10201911991Y A SG 10201911991YA SG 10201911991Y A SG10201911991Y A SG 10201911991YA SG 10201911991Y A SG10201911991Y A SG 10201911991YA SG 10201911991Y A SG10201911991Y A SG 10201911991YA
Authority
SG
Singapore
Prior art keywords
heterostructure
fabrication
Prior art date
Application number
SG10201911991YA
Other languages
English (en)
Inventor
Arnaud Castex
Daniel Delprat
Bernard Aspar
Ionut Radu
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG10201911991YA publication Critical patent/SG10201911991YA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6489—Compensation of undesirable effects
    • H03H9/6496—Reducing ripple in transfer characteristic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N35/00—Magnetostrictive devices
    • H10N35/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
SG10201911991YA 2015-06-12 2016-06-09 Heterostructure and method of fabrication SG10201911991YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1501222A FR3037443B1 (fr) 2015-06-12 2015-06-12 Heterostructure et methode de fabrication

Publications (1)

Publication Number Publication Date
SG10201911991YA true SG10201911991YA (en) 2020-02-27

Family

ID=54848603

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201911991YA SG10201911991YA (en) 2015-06-12 2016-06-09 Heterostructure and method of fabrication

Country Status (8)

Country Link
US (3) US10826459B2 (ko)
EP (1) EP3308411B1 (ko)
JP (1) JP2018518840A (ko)
KR (3) KR20180011243A (ko)
CN (2) CN107710431B (ko)
FR (1) FR3037443B1 (ko)
SG (1) SG10201911991YA (ko)
WO (1) WO2016198542A1 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110832774B (zh) * 2017-07-27 2023-07-21 京瓷株式会社 弹性波元件
FR3079660B1 (fr) * 2018-03-29 2020-04-17 Soitec Procede de transfert d'une couche
US20200044621A1 (en) * 2018-07-31 2020-02-06 Qualcomm Incorporated Thin film devices
TWI815970B (zh) * 2018-11-09 2023-09-21 日商日本碍子股份有限公司 壓電性材料基板與支持基板的接合體、及其製造方法
CN113228508A (zh) * 2018-12-20 2021-08-06 三安日本科技株式会社 弹性波装置、弹性波滤波器、双工器及模块
DE102019119239A1 (de) * 2019-07-16 2021-01-21 RF360 Europe GmbH Multiplexer
CN113922778B (zh) * 2020-07-10 2022-06-21 济南晶正电子科技有限公司 一种滤波器用压电衬底结构及其制备方法
CN111883644B (zh) * 2020-07-23 2021-04-13 中国科学院上海微系统与信息技术研究所 一种异质压电薄膜结构及其制备方法
CN114244311A (zh) * 2021-12-22 2022-03-25 江苏卓胜微电子股份有限公司 一种声表面波谐振器及滤波器
FR3136327A1 (fr) * 2022-06-02 2023-12-08 Soitec Dispositif a ondes elastiques de surface
FR3136326A1 (fr) * 2022-06-02 2023-12-08 Soitec Filtre dispositif a ondes elastiques de surface
FR3136325A1 (fr) * 2022-06-02 2023-12-08 Soitec Dispositif a ondes elastiques de surface

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5759753A (en) 1995-07-19 1998-06-02 Matsushita Electric Industrial Co., Ltd. Piezoelectric device and method of manufacturing the same
JP3924810B2 (ja) 1995-07-19 2007-06-06 松下電器産業株式会社 圧電素子とその製造方法
FR2789518B1 (fr) * 1999-02-10 2003-06-20 Commissariat Energie Atomique Structure multicouche a contraintes internes controlees et procede de realisation d'une telle structure
US6861021B2 (en) 2002-04-16 2005-03-01 General Electric Company Molding tool construction and molding method
JP4723207B2 (ja) * 2004-05-31 2011-07-13 信越化学工業株式会社 複合圧電基板
US8664747B2 (en) 2008-04-28 2014-03-04 Toshiba Techno Center Inc. Trenched substrate for crystal growth and wafer bonding
WO2009139108A1 (ja) 2008-05-12 2009-11-19 株式会社村田製作所 弾性境界波装置
KR100945800B1 (ko) * 2008-12-09 2010-03-05 김영혜 이종 접합 웨이퍼 제조방법
FR2942911B1 (fr) * 2009-03-09 2011-05-13 Soitec Silicon On Insulator Procede de realisation d'une heterostructure avec adaptation locale de coefficient de dilatation thermique
FR2953328B1 (fr) * 2009-12-01 2012-03-30 S O I Tec Silicon On Insulator Tech Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques
US8141429B2 (en) 2010-07-30 2012-03-27 Rosemount Aerospace Inc. High temperature capacitive static/dynamic pressure sensors and methods of making the same
FR2967812B1 (fr) * 2010-11-19 2016-06-10 S O I Tec Silicon On Insulator Tech Dispositif electronique pour applications radiofrequence ou de puissance et procede de fabrication d'un tel dispositif
JP5601377B2 (ja) * 2010-11-30 2014-10-08 株式会社村田製作所 弾性波装置及びその製造方法
US9490418B2 (en) 2011-03-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer
KR101635151B1 (ko) * 2011-07-29 2016-06-30 가부시키가이샤 무라타 세이사쿠쇼 압전 디바이스 및 압전 디바이스의 제조방법
US20150042210A1 (en) * 2012-06-26 2015-02-12 Honda Electronics Co., Ltd. Electromechanical transformation device and method for manufacturing the same
JP6092535B2 (ja) * 2012-07-04 2017-03-08 太陽誘電株式会社 ラム波デバイスおよびその製造方法
EP2736169B1 (en) * 2012-08-17 2016-09-14 NGK Insulators, Ltd. Composite substrate, elastic surface wave device, and method for producing composite substrate
EP3367424B1 (en) * 2015-03-03 2022-10-19 GlobalWafers Co., Ltd. Charge trapping polycrystalline silicon films on silicon substrates with controllable film stress
US11646714B2 (en) * 2018-07-10 2023-05-09 Texas Instruments Incorporated Laterally vibrating bulk acoustic wave resonator

Also Published As

Publication number Publication date
JP2018518840A (ja) 2018-07-12
WO2016198542A1 (en) 2016-12-15
US20200280298A1 (en) 2020-09-03
CN111864051A (zh) 2020-10-30
KR20180011243A (ko) 2018-01-31
EP3308411B1 (en) 2021-10-13
KR20200145848A (ko) 2020-12-30
US20230275559A1 (en) 2023-08-31
US11637542B2 (en) 2023-04-25
KR102301378B1 (ko) 2021-09-14
FR3037443A1 (ko) 2016-12-16
EP3308411A1 (en) 2018-04-18
KR102285595B1 (ko) 2021-08-04
CN107710431A (zh) 2018-02-16
US11595020B2 (en) 2023-02-28
US10826459B2 (en) 2020-11-03
US20180159498A1 (en) 2018-06-07
CN107710431B (zh) 2020-07-31
KR20200029067A (ko) 2020-03-17
US20210058058A1 (en) 2021-02-25
FR3037443B1 (fr) 2018-07-13

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