JP2018518840A - ヘテロ構造体及び製造の方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 48
- 239000010410 layer Substances 0.000 claims description 80
- 239000002346 layers by function Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 claims description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 10
- 101150091203 Acot1 gene Proteins 0.000 description 9
- 102100025854 Acyl-coenzyme A thioesterase 1 Human genes 0.000 description 9
- 239000012790 adhesive layer Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000001627 detrimental effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000009958 sewing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
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- H—ELECTRICITY
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- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
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- H—ELECTRICITY
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- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
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- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
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- H10N30/01—Manufacture or treatment
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- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
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- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
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Abstract
Description
Claims (15)
- ヘテロ構造体(200、400、400’、500’)、特に圧電構造体であって、カバー層(220、420、520)、特に圧電材料の層を具備し、前記カバー層(220、420、520)が第1の熱膨張係数を有し、支持基板(210、410、510)に組み付けられ、前記支持基板(210、410、510)が前記第1の熱膨張係数とは実質的に異なる第2の熱膨張係数を有し、界面のところに、前記カバー層(220、420、520)が、前記界面から前記カバー層(220、420、520)の中まで延伸している少なくとも1つのリセス(240、340、440、540)を備える、ヘテロ構造体(200、400、400’、500’)。
- 前記少なくとも1つのリセス(240、340、440、540)が、前記カバー層(220、420、520)全体にわたり延伸しているトレンチを形成している、請求項1に記載のヘテロ構造体(200、400、400’、500’)。
- 前記少なくとも1つのリセス(240、340、440、540)により分離されている前記カバー層(220、420、520)の部分が、所定の臨界長さよりも小さい横方向広がりを有し、前記臨界長さよりも上では、予め定められた温度での熱処理に起因して破壊が生じ得る、請求項1又は2に記載のヘテロ構造体(200、400、400’、500’)。
- 前記少なくとも1つのリセス(240、340、440、540)が、前記支持基板(210、410、510)との前記界面とは反対側の前記カバー層(220、420、520)の表面まで延伸している、請求項1〜3のいずれか一項に記載のヘテロ構造体(200、400、400’、500’)。
- 前記熱膨張係数のうちの少なくとも一方が強い異方性を示す、請求項1〜4のいずれか一項に記載のヘテロ構造体(200、400、400’、500’)。
- 前記カバー層(220、420、520)の材料が、特にLTO、LNO、AlN、ZnOの中から選択される圧電材料である、請求項1〜5のいずれか一項に記載のヘテロ構造体(200、400、400’、500’)。
- 前記支持基板(210、410、510)の材料が、Si、Ge、GaAs、InP、SiGe、サファイアの群の中から選択される、請求項1〜6のいずれか一項に記載のヘテロ構造体(200、400、400’、500’)。
- 前記支持基板(210、410、510)が、前記界面に隣り合う機能層(250)を備えている、請求項1〜7のいずれか一項に記載のヘテロ構造体(200、400、400’、500’)。
- 前記機能層(250)が、1kOhm/cmよりも高い、好ましくは5kOhm/cmよりも高い電気抵抗を前記支持基板(210、410、510)に与える、請求項8に記載のヘテロ構造体(200、400、400’、500’)。
- 前記機能層(250)が、10μm未満の、好ましくは1μm未満の、又はさらにはより好ましくは100nm未満の厚さを有する、請求項8又は9に記載のヘテロ構造体(200、400、400’、500’)。
- 支持基板(210、410、510)を用意し、カバー層(220、420、520)、特に圧電材料の層を用意するステップと、前記カバー層(220、420、520)の表面に少なくとも1つのリセス(240、340、440、540)を形成するステップ(SA2、SB2)と、前記支持基板(210、410、510)と前記少なくとも1つのリセス(240、340、440、540)を備えた前記カバー層(220、420、520)の前記表面との間の組み付け界面のところに前記支持基板(210、410、510)と前記カバー層(220、420、520)とを組み付けるステップ(S42、S52)とを含む、ヘテロ構造体(200、400、400’、500’)の製造の方法。
- 前記組み付け界面とは反対側の前記カバー層(220、420、520)の前記表面の薄化のステップ(S43)をさらに含む、請求項11に記載のヘテロ構造体(200、400、400’、500’)の製造の方法。
- 前記薄化ステップ(S43)が、組み付けるステップに先立って原子種又はイオン種、特にH又はHeを注入して(SA1、SB1)、前記カバー層(220、420、520)に脆弱ゾーン(570)を形成するステップと、組み付けるステップの後で前記脆弱ゾーンのところでの剥離のステップ(S53)とを含む、請求項12に記載のヘテロ構造体(200、400、400’、500’)の製造の方法。
- 前記薄化ステップ(S43)が、グラインディング、ポリッシング、エッチング、又は任意の組み合わせの群の中から選択される技術により実行される、請求項12に記載のヘテロ構造体(200、400、400’、500’)の製造の方法。
- 前記薄化ステップ(S43)が、前記少なくとも1つのリセス(240、340、440、540)を露出させる、請求項12〜14のいずれか一項に記載のヘテロ構造体(200、400、400’、500’)の製造の方法。
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FR1501222A FR3037443B1 (fr) | 2015-06-12 | 2015-06-12 | Heterostructure et methode de fabrication |
FR15/01222 | 2015-06-12 | ||
PCT/EP2016/063198 WO2016198542A1 (en) | 2015-06-12 | 2016-06-09 | Heterostructure and method of fabrication |
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US (3) | US10826459B2 (ja) |
EP (1) | EP3308411B1 (ja) |
JP (1) | JP2018518840A (ja) |
KR (3) | KR20180011243A (ja) |
CN (2) | CN107710431B (ja) |
FR (1) | FR3037443B1 (ja) |
SG (1) | SG10201911991YA (ja) |
WO (1) | WO2016198542A1 (ja) |
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WO2020130076A1 (ja) * | 2018-12-20 | 2020-06-25 | 三安ジャパンテクノロジー株式会社 | 弾性波デバイス、弾性波フィルタ、デュプレクサ及びモジュール |
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CN110832774B (zh) * | 2017-07-27 | 2023-07-21 | 京瓷株式会社 | 弹性波元件 |
FR3079660B1 (fr) * | 2018-03-29 | 2020-04-17 | Soitec | Procede de transfert d'une couche |
US20200044621A1 (en) * | 2018-07-31 | 2020-02-06 | Qualcomm Incorporated | Thin film devices |
TWI815970B (zh) * | 2018-11-09 | 2023-09-21 | 日商日本碍子股份有限公司 | 壓電性材料基板與支持基板的接合體、及其製造方法 |
DE102019119239A1 (de) * | 2019-07-16 | 2021-01-21 | RF360 Europe GmbH | Multiplexer |
CN113922778B (zh) * | 2020-07-10 | 2022-06-21 | 济南晶正电子科技有限公司 | 一种滤波器用压电衬底结构及其制备方法 |
CN111883644B (zh) * | 2020-07-23 | 2021-04-13 | 中国科学院上海微系统与信息技术研究所 | 一种异质压电薄膜结构及其制备方法 |
CN114244311A (zh) * | 2021-12-22 | 2022-03-25 | 江苏卓胜微电子股份有限公司 | 一种声表面波谐振器及滤波器 |
FR3136327A1 (fr) * | 2022-06-02 | 2023-12-08 | Soitec | Dispositif a ondes elastiques de surface |
FR3136326A1 (fr) * | 2022-06-02 | 2023-12-08 | Soitec | Filtre dispositif a ondes elastiques de surface |
FR3136325A1 (fr) * | 2022-06-02 | 2023-12-08 | Soitec | Dispositif a ondes elastiques de surface |
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- 2016-06-09 KR KR1020177036949A patent/KR20180011243A/ko active Application Filing
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- 2016-06-09 CN CN202010766588.7A patent/CN111864051A/zh active Pending
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JPWO2020130076A1 (ja) * | 2018-12-20 | 2020-06-25 | ||
CN113228508A (zh) * | 2018-12-20 | 2021-08-06 | 三安日本科技株式会社 | 弹性波装置、弹性波滤波器、双工器及模块 |
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Also Published As
Publication number | Publication date |
---|---|
WO2016198542A1 (en) | 2016-12-15 |
US20200280298A1 (en) | 2020-09-03 |
CN111864051A (zh) | 2020-10-30 |
SG10201911991YA (en) | 2020-02-27 |
KR20180011243A (ko) | 2018-01-31 |
EP3308411B1 (en) | 2021-10-13 |
KR20200145848A (ko) | 2020-12-30 |
US20230275559A1 (en) | 2023-08-31 |
US11637542B2 (en) | 2023-04-25 |
KR102301378B1 (ko) | 2021-09-14 |
FR3037443A1 (ja) | 2016-12-16 |
EP3308411A1 (en) | 2018-04-18 |
KR102285595B1 (ko) | 2021-08-04 |
CN107710431A (zh) | 2018-02-16 |
US11595020B2 (en) | 2023-02-28 |
US10826459B2 (en) | 2020-11-03 |
US20180159498A1 (en) | 2018-06-07 |
CN107710431B (zh) | 2020-07-31 |
KR20200029067A (ko) | 2020-03-17 |
US20210058058A1 (en) | 2021-02-25 |
FR3037443B1 (fr) | 2018-07-13 |
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