SG10201906088YA - Low oxide trench dishing chemical mechanical polishing - Google Patents

Low oxide trench dishing chemical mechanical polishing

Info

Publication number
SG10201906088YA
SG10201906088YA SG10201906088YA SG10201906088YA SG10201906088YA SG 10201906088Y A SG10201906088Y A SG 10201906088YA SG 10201906088Y A SG10201906088Y A SG 10201906088YA SG 10201906088Y A SG10201906088Y A SG 10201906088YA SG 10201906088Y A SG10201906088Y A SG 10201906088YA
Authority
SG
Singapore
Prior art keywords
mechanical polishing
chemical mechanical
oxide trench
low oxide
trench dishing
Prior art date
Application number
SG10201906088YA
Other languages
English (en)
Inventor
Shi Xiaobo
P Murella Krishna
D Rose Joseph
Zhou Hongjun
Leonard O'neill Mark
Original Assignee
Versum Materials Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials Us Llc filed Critical Versum Materials Us Llc
Publication of SG10201906088YA publication Critical patent/SG10201906088YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG10201906088YA 2018-06-29 2019-06-29 Low oxide trench dishing chemical mechanical polishing SG10201906088YA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862692633P 2018-06-29 2018-06-29
US201862692639P 2018-06-29 2018-06-29
US16/450,753 US20200002607A1 (en) 2018-06-29 2019-06-24 Low Oxide Trench Dishing Chemical Mechanical Polishing

Publications (1)

Publication Number Publication Date
SG10201906088YA true SG10201906088YA (en) 2020-01-30

Family

ID=67137867

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201906088YA SG10201906088YA (en) 2018-06-29 2019-06-29 Low oxide trench dishing chemical mechanical polishing

Country Status (8)

Country Link
US (1) US20200002607A1 (zh)
EP (1) EP3587524A1 (zh)
JP (1) JP2020002357A (zh)
KR (1) KR20200002709A (zh)
CN (1) CN110655869A (zh)
IL (1) IL267715A (zh)
SG (1) SG10201906088YA (zh)
TW (1) TWI791862B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021231090A1 (en) * 2020-05-11 2021-11-18 Versum Materials Us, Llc Novel pad-1 n-a-bottle (pib) technology for advanced chemical-mechanical planarization (cmp) slurries and processes
KR20230017304A (ko) * 2020-05-29 2023-02-03 버슘머트리얼즈 유에스, 엘엘씨 얕은 트렌치 분리 적용을 위한 저 디싱 산화물 cmp 연마 조성물 및 이의 제조 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028620A (en) * 1988-09-15 1991-07-02 Rohm And Haas Company Biocide composition
US5876490A (en) 1996-12-09 1999-03-02 International Business Machines Corporatin Polish process and slurry for planarization
US6964923B1 (en) 2000-05-24 2005-11-15 International Business Machines Corporation Selective polishing with slurries containing polyelectrolytes
US6616514B1 (en) * 2002-06-03 2003-09-09 Ferro Corporation High selectivity CMP slurry
WO2010139603A1 (en) * 2009-06-05 2010-12-09 Basf Se RASPBERRY-TYPE METAL OXIDE NANOSTRUCTURES COATED WITH CeO2 NANOPARTICLES FOR CHEMICAL MECHANICAL PLANARIZATION (CMP)
CN103210047B (zh) * 2010-09-08 2018-07-17 巴斯夫欧洲公司 含n取代的二氮烯*二氧化物和/或n’-羟基-二氮烯*氧化物盐的含水抛光组合物
US20130200038A1 (en) * 2010-09-08 2013-08-08 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices
EP2649144A4 (en) * 2010-12-10 2014-05-14 Basf Se AQUEOUS POLISHING COMPOSITION AND METHOD FOR MECHANICAL CHEMICAL POLISHING OF SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC AND POLYSILICON FILMS
RU2598046C2 (ru) * 2011-12-21 2016-09-20 Басф Се Композиция для химико-механического полирования, содержащая поливинилфосфоновую кислоту и ее производные
WO2018062401A1 (ja) * 2016-09-29 2018-04-05 花王株式会社 研磨液組成物

Also Published As

Publication number Publication date
KR20200002709A (ko) 2020-01-08
US20200002607A1 (en) 2020-01-02
IL267715A (en) 2019-10-31
TW202000815A (zh) 2020-01-01
CN110655869A (zh) 2020-01-07
JP2020002357A (ja) 2020-01-09
EP3587524A1 (en) 2020-01-01
TWI791862B (zh) 2023-02-11

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