TWI799485B - 化學機械拋光液 - Google Patents

化學機械拋光液 Download PDF

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Publication number
TWI799485B
TWI799485B TW107147269A TW107147269A TWI799485B TW I799485 B TWI799485 B TW I799485B TW 107147269 A TW107147269 A TW 107147269A TW 107147269 A TW107147269 A TW 107147269A TW I799485 B TWI799485 B TW I799485B
Authority
TW
Taiwan
Prior art keywords
mechanical polishing
chemical mechanical
polishing slurry
slurry
chemical
Prior art date
Application number
TW107147269A
Other languages
English (en)
Other versions
TW201927953A (zh
Inventor
馬健
荊建芬
楊俊雅
宋凱
蔡鑫元
汪國豪
姚穎
卞鵬程
Original Assignee
大陸商安集微電子(上海)有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 大陸商安集微電子(上海)有限公司 filed Critical 大陸商安集微電子(上海)有限公司
Publication of TW201927953A publication Critical patent/TW201927953A/zh
Application granted granted Critical
Publication of TWI799485B publication Critical patent/TWI799485B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW107147269A 2017-12-27 2018-12-26 化學機械拋光液 TWI799485B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201711439569.8A CN109971357B (zh) 2017-12-27 2017-12-27 一种化学机械抛光液
??201711439569.8 2017-12-27
CN201711439569.8 2017-12-27

Publications (2)

Publication Number Publication Date
TW201927953A TW201927953A (zh) 2019-07-16
TWI799485B true TWI799485B (zh) 2023-04-21

Family

ID=67066608

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107147269A TWI799485B (zh) 2017-12-27 2018-12-26 化學機械拋光液

Country Status (4)

Country Link
US (1) US11746257B2 (zh)
CN (1) CN109971357B (zh)
TW (1) TWI799485B (zh)
WO (1) WO2019129103A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113122141A (zh) * 2019-12-30 2021-07-16 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN113802122B (zh) * 2021-09-13 2024-02-27 万华化学集团电子材料有限公司 一种减少点腐蚀的钨插塞化学机械抛光液及其应用

Citations (4)

* Cited by examiner, † Cited by third party
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CN102093818A (zh) * 2009-12-11 2011-06-15 安集微电子（上海）有限公司 一种化学机械抛光浆料及其应用
TW201504145A (zh) * 2013-07-24 2015-02-01 Tokuyama Corp Ｃｍｐ用二氧化矽、水性分散液以及ｃｍｐ用二氧化矽的製造方法
CN105803461A (zh) * 2014-12-29 2016-07-27 安集微电子（上海）有限公司 一种用于铜互连的化学机械抛光液及工艺
TW201708451A (zh) * 2015-04-27 2017-03-01 氣體產品及化學品股份公司 低淺盤效應銅化學機械平坦化

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US20050022456A1 (en) * 2003-07-30 2005-02-03 Babu S. V. Polishing slurry and method for chemical-mechanical polishing of copper
WO2005047410A1 (en) * 2003-11-14 2005-05-26 Showa Denko K.K. Polishing composition and polishing method
US8088690B2 (en) 2009-03-31 2012-01-03 International Business Machines Corporation CMP method
CN101671527A (zh) * 2009-09-27 2010-03-17 大连三达奥克化学股份有限公司 高去除率、低损伤的铜化学机械抛光液及制备方法
CN102093817A (zh) * 2009-12-11 2011-06-15 安集微电子（上海）有限公司 一种用于钽阻挡抛光的化学机械抛光液
JPWO2011122415A1 (ja) * 2010-03-29 2013-07-08 旭硝子株式会社 研磨剤、研磨方法および半導体集積回路装置の製造方法
CN102477260B (zh) * 2010-11-26 2014-12-03 安集微电子（上海）有限公司 一种化学机械抛光液
CN103898510A (zh) * 2012-12-28 2014-07-02 安集微电子（上海）有限公司 一种用于铜互连的化学机械抛光液及工艺
CN103898512B (zh) * 2012-12-28 2018-10-26 安集微电子（上海）有限公司 一种用于铜互连的化学机械抛光液及工艺
EP2997104A4 (en) * 2013-05-15 2017-01-25 Basf Se Use of a chemical-mechanical polishing (cmp) composition for polishing a substrate or layer containing at least one iii-v material
CN104745090A (zh) * 2013-12-25 2015-07-01 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
KR20160114709A (ko) * 2014-01-31 2016-10-05 바스프 에스이 폴리（아미노산）을 포함하는 화학 기계적 연마（ｃｍｐ） 조성물
CN105297024A (zh) * 2014-07-23 2016-02-03 安集微电子科技(上海)有限公司 一种化学机械抛光液在提高钽抛光速率中的应用
US9962805B2 (en) * 2016-04-22 2018-05-08 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical mechanical polishing apparatus and method
US10155185B2 (en) * 2016-05-09 2018-12-18 Tokyo Ohka Kogyo Co., Ltd. Polyimide-based resin film cleaning liquid, method for cleaning polyimide-based resin film, method for producing polyimide coating, method for producing filter, filter medium, or filter device, and method for producing chemical solution for lithography
JP7013662B2 (ja) * 2017-03-23 2022-02-01 富士フイルムビジネスイノベーション株式会社 シリカ複合粒子及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102093818A (zh) * 2009-12-11 2011-06-15 安集微电子（上海）有限公司 一种化学机械抛光浆料及其应用
TW201504145A (zh) * 2013-07-24 2015-02-01 Tokuyama Corp Ｃｍｐ用二氧化矽、水性分散液以及ｃｍｐ用二氧化矽的製造方法
CN105803461A (zh) * 2014-12-29 2016-07-27 安集微电子（上海）有限公司 一种用于铜互连的化学机械抛光液及工艺
TW201708451A (zh) * 2015-04-27 2017-03-01 氣體產品及化學品股份公司 低淺盤效應銅化學機械平坦化

Also Published As

Publication number Publication date
US11746257B2 (en) 2023-09-05
WO2019129103A1 (zh) 2019-07-04
CN109971357A (zh) 2019-07-05
TW201927953A (zh) 2019-07-16
CN109971357B (zh) 2021-12-07
US20210139740A1 (en) 2021-05-13

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