TWI799485B - 化學機械拋光液 - Google Patents
化學機械拋光液 Download PDFInfo
- Publication number
- TWI799485B TWI799485B TW107147269A TW107147269A TWI799485B TW I799485 B TWI799485 B TW I799485B TW 107147269 A TW107147269 A TW 107147269A TW 107147269 A TW107147269 A TW 107147269A TW I799485 B TWI799485 B TW I799485B
- Authority
- TW
- Taiwan
- Prior art keywords
- mechanical polishing
- chemical mechanical
- polishing slurry
- slurry
- chemical
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 1
- 239000002002 slurry Substances 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711439569.8A CN109971357B (zh) | 2017-12-27 | 2017-12-27 | 一种化学机械抛光液 |
CN201711439569.8 | 2017-12-27 | ||
??201711439569.8 | 2017-12-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201927953A TW201927953A (zh) | 2019-07-16 |
TWI799485B true TWI799485B (zh) | 2023-04-21 |
Family
ID=67066608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107147269A TWI799485B (zh) | 2017-12-27 | 2018-12-26 | 化學機械拋光液 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11746257B2 (zh) |
CN (1) | CN109971357B (zh) |
TW (1) | TWI799485B (zh) |
WO (1) | WO2019129103A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113122141B (zh) * | 2019-12-30 | 2024-08-02 | 安集微电子科技(上海)股份有限公司 | 一种化学机械抛光液 |
CN113802122B (zh) * | 2021-09-13 | 2024-02-27 | 万华化学集团电子材料有限公司 | 一种减少点腐蚀的钨插塞化学机械抛光液及其应用 |
CN115926629B (zh) * | 2022-12-30 | 2023-12-05 | 昂士特科技(深圳)有限公司 | 具有改进再循环性能的化学机械抛光组合物 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102093818A (zh) * | 2009-12-11 | 2011-06-15 | 安集微电子(上海)有限公司 | 一种化学机械抛光浆料及其应用 |
TW201504145A (zh) * | 2013-07-24 | 2015-02-01 | Tokuyama Corp | Cmp用二氧化矽、水性分散液以及cmp用二氧化矽的製造方法 |
CN105803461A (zh) * | 2014-12-29 | 2016-07-27 | 安集微电子(上海)有限公司 | 一种用于铜互连的化学机械抛光液及工艺 |
TW201708451A (zh) * | 2015-04-27 | 2017-03-01 | 氣體產品及化學品股份公司 | 低淺盤效應銅化學機械平坦化 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050022456A1 (en) * | 2003-07-30 | 2005-02-03 | Babu S. V. | Polishing slurry and method for chemical-mechanical polishing of copper |
WO2005047410A1 (en) * | 2003-11-14 | 2005-05-26 | Showa Denko K.K. | Polishing composition and polishing method |
US8088690B2 (en) * | 2009-03-31 | 2012-01-03 | International Business Machines Corporation | CMP method |
CN101671527A (zh) * | 2009-09-27 | 2010-03-17 | 大连三达奥克化学股份有限公司 | 高去除率、低损伤的铜化学机械抛光液及制备方法 |
CN102093817A (zh) * | 2009-12-11 | 2011-06-15 | 安集微电子(上海)有限公司 | 一种用于钽阻挡抛光的化学机械抛光液 |
WO2011122415A1 (ja) * | 2010-03-29 | 2011-10-06 | 旭硝子株式会社 | 研磨剤、研磨方法および半導体集積回路装置の製造方法 |
CN102477260B (zh) * | 2010-11-26 | 2014-12-03 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
CN103898510A (zh) * | 2012-12-28 | 2014-07-02 | 安集微电子(上海)有限公司 | 一种用于铜互连的化学机械抛光液及工艺 |
CN103898512B (zh) * | 2012-12-28 | 2018-10-26 | 安集微电子(上海)有限公司 | 一种用于铜互连的化学机械抛光液及工艺 |
KR20160009644A (ko) * | 2013-05-15 | 2016-01-26 | 바스프 에스이 | 적어도 하나의 iii-v 재료를 포함하는 물질 또는 층을 연마하기 위한 cmp 조성물의 용도 |
CN104745090A (zh) * | 2013-12-25 | 2015-07-01 | 安集微电子(上海)有限公司 | 一种化学机械抛光液及其应用 |
EP3099756A4 (en) * | 2014-01-31 | 2017-08-02 | Basf Se | A chemical mechanical polishing (cmp) composition comprising a poly(aminoacid) |
CN105297024A (zh) * | 2014-07-23 | 2016-02-03 | 安集微电子科技(上海)有限公司 | 一种化学机械抛光液在提高钽抛光速率中的应用 |
US9962805B2 (en) * | 2016-04-22 | 2018-05-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chemical mechanical polishing apparatus and method |
US10155185B2 (en) * | 2016-05-09 | 2018-12-18 | Tokyo Ohka Kogyo Co., Ltd. | Polyimide-based resin film cleaning liquid, method for cleaning polyimide-based resin film, method for producing polyimide coating, method for producing filter, filter medium, or filter device, and method for producing chemical solution for lithography |
JP7013662B2 (ja) * | 2017-03-23 | 2022-02-01 | 富士フイルムビジネスイノベーション株式会社 | シリカ複合粒子及びその製造方法 |
-
2017
- 2017-12-27 CN CN201711439569.8A patent/CN109971357B/zh active Active
-
2018
- 2018-12-26 US US16/958,391 patent/US11746257B2/en active Active
- 2018-12-26 TW TW107147269A patent/TWI799485B/zh active
- 2018-12-26 WO PCT/CN2018/124049 patent/WO2019129103A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102093818A (zh) * | 2009-12-11 | 2011-06-15 | 安集微电子(上海)有限公司 | 一种化学机械抛光浆料及其应用 |
TW201504145A (zh) * | 2013-07-24 | 2015-02-01 | Tokuyama Corp | Cmp用二氧化矽、水性分散液以及cmp用二氧化矽的製造方法 |
CN105803461A (zh) * | 2014-12-29 | 2016-07-27 | 安集微电子(上海)有限公司 | 一种用于铜互连的化学机械抛光液及工艺 |
TW201708451A (zh) * | 2015-04-27 | 2017-03-01 | 氣體產品及化學品股份公司 | 低淺盤效應銅化學機械平坦化 |
Also Published As
Publication number | Publication date |
---|---|
CN109971357A (zh) | 2019-07-05 |
US11746257B2 (en) | 2023-09-05 |
CN109971357B (zh) | 2021-12-07 |
US20210139740A1 (en) | 2021-05-13 |
TW201927953A (zh) | 2019-07-16 |
WO2019129103A1 (zh) | 2019-07-04 |
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