SG10201903646WA - Method for microwave processing of photosensitive polyimides - Google Patents
Method for microwave processing of photosensitive polyimidesInfo
- Publication number
- SG10201903646WA SG10201903646WA SG10201903646WA SG10201903646WA SG10201903646WA SG 10201903646W A SG10201903646W A SG 10201903646WA SG 10201903646W A SG10201903646W A SG 10201903646WA SG 10201903646W A SG10201903646W A SG 10201903646WA SG 10201903646W A SG10201903646W A SG 10201903646WA
- Authority
- SG
- Singapore
- Prior art keywords
- pspi
- film
- curing
- oxygen
- microwave
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
- B05D3/0254—After-treatment
- B05D3/029—After-treatment with microwaves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
- C08J7/123—Treatment by wave energy or particle radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2505/00—Polyamides
- B05D2505/50—Polyimides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Formation Of Insulating Films (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461964748P | 2014-01-13 | 2014-01-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201903646WA true SG10201903646WA (en) | 2019-05-30 |
Family
ID=53521286
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201903646WA SG10201903646WA (en) | 2014-01-13 | 2015-01-13 | Method for microwave processing of photosensitive polyimides |
| SG11201604992QA SG11201604992QA (en) | 2014-01-13 | 2015-01-13 | Method for microwave processing of photosensitive polyimides |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201604992QA SG11201604992QA (en) | 2014-01-13 | 2015-01-13 | Method for microwave processing of photosensitive polyimides |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9519221B2 (enExample) |
| JP (3) | JP2017505464A (enExample) |
| KR (1) | KR101842691B1 (enExample) |
| CN (2) | CN105940347B (enExample) |
| SG (2) | SG10201903646WA (enExample) |
| WO (1) | WO2015106234A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9519221B2 (en) * | 2014-01-13 | 2016-12-13 | Applied Materials, Inc. | Method for microwave processing of photosensitive polyimides |
| JP2019118626A (ja) * | 2017-12-29 | 2019-07-22 | 株式会社三洋物産 | 遊技機 |
| JP2019122460A (ja) * | 2018-01-12 | 2019-07-25 | 株式会社三洋物産 | 遊技機 |
| JP2019136396A (ja) * | 2018-02-14 | 2019-08-22 | 株式会社三洋物産 | 遊技機 |
| JP2019136399A (ja) * | 2018-02-14 | 2019-08-22 | 株式会社三洋物産 | 遊技機 |
| JP2019136401A (ja) * | 2018-02-14 | 2019-08-22 | 株式会社三洋物産 | 遊技機 |
| JP2019136395A (ja) * | 2018-02-14 | 2019-08-22 | 株式会社三洋物産 | 遊技機 |
| JP2019136400A (ja) * | 2018-02-14 | 2019-08-22 | 株式会社三洋物産 | 遊技機 |
| JP2019136397A (ja) * | 2018-02-14 | 2019-08-22 | 株式会社三洋物産 | 遊技機 |
| JP2019136398A (ja) * | 2018-02-14 | 2019-08-22 | 株式会社三洋物産 | 遊技機 |
| CN108582606B (zh) * | 2018-04-13 | 2020-07-03 | 南京航空航天大学 | 大厚度复合材料微波固化工艺方法 |
| US12048948B2 (en) * | 2018-12-26 | 2024-07-30 | Applied Materials, Inc. | Methods for forming microwave tunable composited thin-film dielectric layer |
| EP4041803A4 (en) * | 2019-10-04 | 2022-11-30 | FUJIFILM Electronic Materials U.S.A., Inc. | FLATTENING METHOD AND COMPOSITION |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4093461A (en) * | 1975-07-18 | 1978-06-06 | Gaf Corporation | Positive working thermally stable photoresist composition, article and method of using |
| JP3031434B2 (ja) * | 1991-08-07 | 2000-04-10 | 旭化成工業株式会社 | ポリイミドのパターン形成方法 |
| JPH05119478A (ja) * | 1991-10-29 | 1993-05-18 | Asahi Chem Ind Co Ltd | ポリイミドパターンの製造方法 |
| JPH05224419A (ja) * | 1992-02-07 | 1993-09-03 | Asahi Chem Ind Co Ltd | ポリイミド微細パターンの形成方法 |
| US6159666A (en) * | 1998-01-14 | 2000-12-12 | Fijitsu Limited | Environmentally friendly removal of photoresists used in wet etchable polyimide processes |
| JP3844106B2 (ja) * | 1999-06-09 | 2006-11-08 | 住友ベークライト株式会社 | ポジ型感光性樹脂組成物の硬化方法及びその方法により製作された半導体装置 |
| US6342333B1 (en) * | 1999-09-23 | 2002-01-29 | Hitachi Chemical Dupont Microsystems, L.L.C. | Photosensitive resin composition, patterning method, and electronic components |
| JP4529566B2 (ja) * | 2004-07-13 | 2010-08-25 | 日立化成デュポンマイクロシステムズ株式会社 | マイクロ波硬化用ポジ型感光性樹脂組成物を用いたパターンの製造方法 |
| JP3995253B2 (ja) * | 2004-09-28 | 2007-10-24 | Tdk株式会社 | 感光性ポリイミドパターンの形成方法及び該パターンを有する電子素子 |
| JP4618075B2 (ja) * | 2004-09-29 | 2011-01-26 | 日立化成デュポンマイクロシステムズ株式会社 | ネガ型感光性樹脂組成物及びパターン形成方法 |
| JP5099979B2 (ja) * | 2005-04-27 | 2012-12-19 | 日立化成デュポンマイクロシステムズ株式会社 | ネガ型感光性樹脂組成物、パターンの製造方法及び電子部品 |
| US20090233120A1 (en) * | 2005-08-19 | 2009-09-17 | Mutsuhiro Maruyama | Laminate and Process for Producing the Same |
| KR101438857B1 (ko) * | 2007-03-12 | 2014-09-05 | 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 | 감광성 수지 조성물, 그 수지 조성물을 이용한 패턴 경화막의 제조방법 및 전자부품 |
| JP4770985B2 (ja) * | 2007-11-12 | 2011-09-14 | 日立化成工業株式会社 | ポジ型感光性樹脂組成物、レジストパターンの製造方法、半導体装置及び電子デバイス |
| GB0817563D0 (en) * | 2008-09-25 | 2008-11-05 | Membrane Extraction Tech Ltd | Membrane module |
| JP2012094600A (ja) * | 2010-10-25 | 2012-05-17 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
| JP2012216715A (ja) * | 2011-04-01 | 2012-11-08 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
| KR101910220B1 (ko) * | 2011-06-15 | 2018-10-19 | 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 | 감광성 수지 조성물, 그 수지 조성물을 사용한 패턴 경화막의 제조 방법 및 전자 부품 |
| JP5263424B2 (ja) * | 2012-04-05 | 2013-08-14 | 日立化成株式会社 | ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子デバイス |
| US9508616B2 (en) * | 2012-05-11 | 2016-11-29 | Applied Materials, Inc. | Method for lower thermal budget multiple cures in semiconductor packaging |
| JP6538027B2 (ja) * | 2013-05-17 | 2019-07-03 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | 新規ポリマー及びそれを含有する熱硬化性組成物 |
| US9519221B2 (en) * | 2014-01-13 | 2016-12-13 | Applied Materials, Inc. | Method for microwave processing of photosensitive polyimides |
-
2015
- 2015-01-12 US US14/544,482 patent/US9519221B2/en active Active
- 2015-01-13 WO PCT/US2015/011107 patent/WO2015106234A1/en not_active Ceased
- 2015-01-13 SG SG10201903646WA patent/SG10201903646WA/en unknown
- 2015-01-13 CN CN201580004321.1A patent/CN105940347B/zh active Active
- 2015-01-13 SG SG11201604992QA patent/SG11201604992QA/en unknown
- 2015-01-13 JP JP2016563899A patent/JP2017505464A/ja active Pending
- 2015-01-13 CN CN201911140691.4A patent/CN111013967A/zh active Pending
- 2015-01-13 KR KR1020167021874A patent/KR101842691B1/ko not_active Expired - Fee Related
-
2016
- 2016-12-12 US US15/375,773 patent/US10139728B2/en active Active
-
2020
- 2020-01-14 JP JP2020003625A patent/JP7504595B2/ja active Active
-
2022
- 2022-05-17 JP JP2022080732A patent/JP2022113685A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20170090284A1 (en) | 2017-03-30 |
| SG11201604992QA (en) | 2016-07-28 |
| WO2015106234A1 (en) | 2015-07-16 |
| CN105940347B (zh) | 2019-12-13 |
| JP2020074023A (ja) | 2020-05-14 |
| CN111013967A (zh) | 2020-04-17 |
| JP2022113685A (ja) | 2022-08-04 |
| CN105940347A (zh) | 2016-09-14 |
| US20150198890A1 (en) | 2015-07-16 |
| US9519221B2 (en) | 2016-12-13 |
| JP7504595B2 (ja) | 2024-06-24 |
| KR20160107282A (ko) | 2016-09-13 |
| US10139728B2 (en) | 2018-11-27 |
| KR101842691B1 (ko) | 2018-03-27 |
| JP2017505464A (ja) | 2017-02-16 |
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