SG10201810718VA - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
SG10201810718VA
SG10201810718VA SG10201810718VA SG10201810718VA SG10201810718VA SG 10201810718V A SG10201810718V A SG 10201810718VA SG 10201810718V A SG10201810718V A SG 10201810718VA SG 10201810718V A SG10201810718V A SG 10201810718VA SG 10201810718V A SG10201810718V A SG 10201810718VA
Authority
SG
Singapore
Prior art keywords
semiconductor pattern
semiconductor device
well region
impurity
adjacent
Prior art date
Application number
SG10201810718VA
Inventor
Yoo Jongryeol
Yoo Jeongho
Jung Sujin
Cho Youngdae
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10201810718VA publication Critical patent/SG10201810718VA/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0886—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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    • H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)

Abstract

A semiconductor device includes a well region in a substrate, a semiconductor pattern on the well region, the semiconductor pattern including an impurity, and a gate electrode on the semiconductor pattern. A concentration of the impurity in the semiconductor pattern increases in a direction from an upper portion of the semiconductor pattern, adjacent to the gate electrode, to a lower portion of the semiconductor pattern, adjacent to the well region. FIG. 1B
SG10201810718VA 2018-02-09 2018-11-29 Semiconductor device SG10201810718VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180016380A KR102465356B1 (en) 2018-02-09 2018-02-09 Semiconductor device

Publications (1)

Publication Number Publication Date
SG10201810718VA true SG10201810718VA (en) 2019-09-27

Family

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Application Number Title Priority Date Filing Date
SG10201810718VA SG10201810718VA (en) 2018-02-09 2018-11-29 Semiconductor device

Country Status (5)

Country Link
US (1) US10797165B2 (en)
KR (1) KR102465356B1 (en)
CN (1) CN110137258B (en)
DE (1) DE102018128335A1 (en)
SG (1) SG10201810718VA (en)

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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US20190252526A1 (en) 2019-08-15
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