SG10201804422VA - Photomask Blank and Making Method - Google Patents
Photomask Blank and Making MethodInfo
- Publication number
- SG10201804422VA SG10201804422VA SG10201804422VA SG10201804422VA SG10201804422VA SG 10201804422V A SG10201804422V A SG 10201804422VA SG 10201804422V A SG10201804422V A SG 10201804422VA SG 10201804422V A SG10201804422V A SG 10201804422VA SG 10201804422V A SG10201804422V A SG 10201804422VA
- Authority
- SG
- Singapore
- Prior art keywords
- photomask blank
- making method
- film
- photomask
- exposure light
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017115879A JP6791031B2 (ja) | 2017-06-13 | 2017-06-13 | フォトマスクブランク及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201804422VA true SG10201804422VA (en) | 2019-01-30 |
Family
ID=62492498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201804422VA SG10201804422VA (en) | 2017-06-13 | 2018-05-24 | Photomask Blank and Making Method |
Country Status (7)
Country | Link |
---|---|
US (1) | US11061319B2 (zh) |
EP (1) | EP3415987B1 (zh) |
JP (1) | JP6791031B2 (zh) |
KR (1) | KR102296523B1 (zh) |
CN (1) | CN109085737B (zh) |
SG (1) | SG10201804422VA (zh) |
TW (1) | TWI742288B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6753375B2 (ja) * | 2017-07-28 | 2020-09-09 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスクブランクの製造方法及びフォトマスクの製造方法 |
US20220075258A1 (en) * | 2018-12-26 | 2022-03-10 | S&S Tech Co., Ltd. | Blankmask and photomask |
JP7313166B2 (ja) * | 2019-03-18 | 2023-07-24 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
US11553624B1 (en) * | 2021-06-23 | 2023-01-10 | Lenovo (United States) Inc. | Integrated thermal interface detachment mechanism for inaccessible interfaces |
KR102660636B1 (ko) * | 2021-12-31 | 2024-04-25 | 에스케이엔펄스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6385553A (ja) * | 1986-09-30 | 1988-04-16 | Toshiba Corp | マスク基板およびマスクパタ−ンの形成方法 |
JPH0749558A (ja) | 1993-08-05 | 1995-02-21 | Sony Corp | 位相シフトマスクの作製方法 |
US20050170665A1 (en) * | 2003-04-17 | 2005-08-04 | Fujitsu Limited | Method of forming a high dielectric film |
US7264908B2 (en) * | 2003-05-16 | 2007-09-04 | Shin-Etsu Chemical Co., Ltd. | Photo mask blank and photo mask |
US7365014B2 (en) * | 2004-01-30 | 2008-04-29 | Applied Materials, Inc. | Reticle fabrication using a removable hard mask |
DE602006021102D1 (de) * | 2005-07-21 | 2011-05-19 | Shinetsu Chemical Co | Photomaskenrohling, Photomaske und deren Herstellungsverfahren |
JP4883278B2 (ja) * | 2006-03-10 | 2012-02-22 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスクの製造方法 |
US8198118B2 (en) * | 2006-10-31 | 2012-06-12 | Taiwan Semiconductor Manufacturing Co. | Method for forming a robust mask with reduced light scattering |
JP4989800B2 (ja) * | 2008-09-27 | 2012-08-01 | Hoya株式会社 | マスクブランク及び転写用マスクの製造方法 |
JP2011211083A (ja) * | 2010-03-30 | 2011-10-20 | Hoya Corp | マスクブランクス、パターン形成方法及びモールドの製造方法 |
JP5736615B2 (ja) * | 2011-04-26 | 2015-06-17 | 国立大学法人大阪大学 | 基板の洗浄方法 |
WO2014112457A1 (ja) * | 2013-01-15 | 2014-07-24 | Hoya株式会社 | マスクブランク、位相シフトマスクおよびこれらの製造方法 |
JP5686216B1 (ja) * | 2013-08-20 | 2015-03-18 | 大日本印刷株式会社 | マスクブランクス、位相シフトマスク及びその製造方法 |
JP6258151B2 (ja) * | 2013-09-25 | 2018-01-10 | 信越化学工業株式会社 | フォトマスクブランクおよびその製造方法 |
WO2016103843A1 (ja) * | 2014-12-26 | 2016-06-30 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
WO2016140044A1 (ja) * | 2015-03-04 | 2016-09-09 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスクの製造方法及びマスクパターン形成方法 |
JP6601245B2 (ja) * | 2015-03-04 | 2019-11-06 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスクの製造方法及びマスクパターン形成方法 |
JP6380204B2 (ja) * | 2015-03-31 | 2018-08-29 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランク、ハーフトーン位相シフトマスク及びパターン露光方法 |
JP6087401B2 (ja) * | 2015-08-14 | 2017-03-01 | Hoya株式会社 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
JP6394544B2 (ja) * | 2015-09-04 | 2018-09-26 | 信越化学工業株式会社 | フォトマスクブランクの欠陥検査方法、選別方法及び製造方法 |
US10816891B2 (en) * | 2016-12-14 | 2020-10-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask and fabrication method therefor |
JP6900872B2 (ja) * | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | フォトマスクブランク及びその製造方法 |
-
2017
- 2017-06-13 JP JP2017115879A patent/JP6791031B2/ja active Active
-
2018
- 2018-05-24 SG SG10201804422VA patent/SG10201804422VA/en unknown
- 2018-05-30 EP EP18175166.0A patent/EP3415987B1/en active Active
- 2018-06-04 US US15/996,926 patent/US11061319B2/en active Active
- 2018-06-08 KR KR1020180065794A patent/KR102296523B1/ko active IP Right Grant
- 2018-06-11 TW TW107120015A patent/TWI742288B/zh active
- 2018-06-13 CN CN201810605620.6A patent/CN109085737B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
EP3415987A1 (en) | 2018-12-19 |
CN109085737B (zh) | 2024-07-09 |
TW201921092A (zh) | 2019-06-01 |
EP3415987B1 (en) | 2021-09-29 |
KR102296523B1 (ko) | 2021-09-02 |
JP2019002973A (ja) | 2019-01-10 |
JP6791031B2 (ja) | 2020-11-25 |
US20180356721A1 (en) | 2018-12-13 |
KR20180135806A (ko) | 2018-12-21 |
TWI742288B (zh) | 2021-10-11 |
CN109085737A (zh) | 2018-12-25 |
US11061319B2 (en) | 2021-07-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201804422VA (en) | Photomask Blank and Making Method | |
JP2015212826A5 (zh) | ||
JP2016164683A5 (zh) | ||
SG10201801792VA (en) | Halftone Phase Shift Photomask Blank | |
TWI363247B (zh) | ||
TW200510495A (en) | Material for forming resist-protecting film for immersion exposure process, resist-protecting film made of such material and method for forming resist pattern using such resist-protection film | |
TW200715044A (en) | Photomask blank, photomask and fabrication method thereof | |
EP2738791A3 (en) | Method for correcting a photomask | |
JP2015191218A5 (zh) | ||
SG11201901299SA (en) | Mask blank, transfer mask, and method of manufacturing semiconductor device | |
TWI694302B (zh) | 光罩及顯示裝置之製造方法 | |
JP2008282046A5 (zh) | ||
TW200600963A (en) | Gray scale mask and method of manufacturing the same | |
SG10201801157PA (en) | Photomask Blank | |
TW200720835A (en) | Method for preparing surface concaves and convexes | |
WO2006113145A3 (en) | Systems and methods for mitigating variances on a patterned wafer using a prediction model | |
JP2015092281A5 (zh) | ||
JP2019040200A5 (ja) | マスクブランク、位相シフトマスク、及び半導体デバイスの製造方法 | |
SG11201807712YA (en) | Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device | |
SG11201907839RA (en) | Phase shift mask blank, phase shift mask and manufacturing method for phase shift mask | |
KR20180084635A (ko) | 표시 장치 제조용 위상 시프트 마스크 블랭크, 표시 장치 제조용 위상 시프트 마스크의 제조 방법 및 표시 장치의 제조 방법 | |
TW200602441A (en) | Immersion liquid for liquid immersion lithography process, and resist-pattern forming method using immersion liquid | |
WO2008117719A1 (ja) | 表面凹凸の作製方法 | |
JP2009187032A5 (zh) | ||
JP2009230126A (ja) | 多階調フォトマスク、その製造方法及びパターン転写方法 |