SG10201610592VA - Lower electrode of dram capacitor and manufacturing method thereof - Google Patents

Lower electrode of dram capacitor and manufacturing method thereof

Info

Publication number
SG10201610592VA
SG10201610592VA SG10201610592VA SG10201610592VA SG10201610592VA SG 10201610592V A SG10201610592V A SG 10201610592VA SG 10201610592V A SG10201610592V A SG 10201610592VA SG 10201610592V A SG10201610592V A SG 10201610592VA SG 10201610592V A SG10201610592V A SG 10201610592VA
Authority
SG
Singapore
Prior art keywords
manufacturing
lower electrode
dram capacitor
dram
capacitor
Prior art date
Application number
SG10201610592VA
Other languages
English (en)
Inventor
Ishizaka Tadahiro
Koizumi Masaki
Sano Masaki
Hong Seokhyoung
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG10201610592VA publication Critical patent/SG10201610592VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
SG10201610592VA 2015-12-21 2016-12-19 Lower electrode of dram capacitor and manufacturing method thereof SG10201610592VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015248362A JP6576235B2 (ja) 2015-12-21 2015-12-21 Ｄｒａｍキャパシタの下部電極およびその製造方法

Publications (1)

Publication Number Publication Date
SG10201610592VA true SG10201610592VA (en) 2017-07-28

Family

ID=59065292

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201610592VA SG10201610592VA (en) 2015-12-21 2016-12-19 Lower electrode of dram capacitor and manufacturing method thereof

Country Status (6)

Country Link
US (1) US10199451B2 (zh)
JP (1) JP6576235B2 (zh)
KR (1) KR101946124B1 (zh)
CN (1) CN106952894B (zh)
SG (1) SG10201610592VA (zh)
TW (1) TWI745324B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200114865A (ko) 2019-03-29 2020-10-07 삼성전자주식회사 캐패시터를 포함하는 반도체 소자 및 그 제조 방법
CN114868225A (zh) * 2019-12-09 2022-08-05 恩特格里斯公司 由多种阻障材料制得的扩散阻障和其相关物品与方法
KR20220037053A (ko) 2020-09-17 2022-03-24 삼성전자주식회사 내부 보호층 및 외부 보호층을 포함하는 하부 전극을 갖는 반도체 소자
US11706486B2 (en) * 2021-06-25 2023-07-18 Rovi Guides, Inc. Systems and methods to prevent or reduce ad fatigue using user preferences

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US5514908A (en) * 1994-04-29 1996-05-07 Sgs-Thomson Microelectronics, Inc. Integrated circuit with a titanium nitride contact barrier having oxygen stuffed grain boundaries
US5895266A (en) * 1996-02-26 1999-04-20 Applied Materials, Inc. Titanium nitride barrier layers
JP3277855B2 (ja) * 1997-08-27 2002-04-22 ヤマハ株式会社 半導体装置の配線形成方法
US20020180046A1 (en) * 1998-02-18 2002-12-05 International Business Machines Corporation Method for producing a flat interface for a metal-silicon contact barrier film
US6225656B1 (en) * 1998-12-01 2001-05-01 Symetrix Corporation Ferroelectric integrated circuit with protective layer incorporating oxygen and method for fabricating same
JP3228262B2 (ja) * 1999-03-10 2001-11-12 日本電気株式会社 半導体素子のキャパシタ製造方法及び半導体素子のキャパシタ
US6824825B2 (en) * 1999-09-13 2004-11-30 Tokyo Electron Limited Method for depositing metallic nitride series thin film
JP2001156024A (ja) * 1999-09-13 2001-06-08 Tokyo Electron Ltd ＴｉＮ系薄膜およびその成膜方法、成膜装置、ＴｉＮ系薄膜を含む膜構造体およびその製造方法、ならびに半導体装置
JP3805603B2 (ja) * 2000-05-29 2006-08-02 富士通株式会社 半導体装置及びその製造方法
US6495428B1 (en) * 2001-07-11 2002-12-17 Micron Technology, Inc. Method of making a capacitor with oxygenated metal electrodes and high dielectric constant materials
GB2386471B (en) 2001-12-11 2004-04-07 Samsung Electronics Co Ltd A method for fabricating a one-cylinder stack capacitor
US6919101B2 (en) * 2003-02-04 2005-07-19 Tegal Corporation Method to deposit an impermeable film on porous low-k dielectric film
KR100712502B1 (ko) * 2004-11-30 2007-05-02 삼성전자주식회사 금속-유전막-금속 캐패시터 및 그 제조방법
JP2007201083A (ja) 2006-01-25 2007-08-09 Elpida Memory Inc キャパシタの製造方法
US20080087930A1 (en) * 2006-10-11 2008-04-17 Jong-Cheol Lee Capicitor Using Binary Metal Electrode, Semiconductor Device Having The Capacitor And Method of Fabricating The Same
JP4805865B2 (ja) * 2007-03-19 2011-11-02 シャープ株式会社 可変抵抗素子
JP5832715B2 (ja) * 2008-09-04 2015-12-16 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2011096818A (ja) * 2009-10-29 2011-05-12 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
JP5677921B2 (ja) * 2010-09-27 2015-02-25 富士フイルム株式会社 光電変換素子の製造方法
US20130149852A1 (en) 2011-12-08 2013-06-13 Tokyo Electron Limited Method for forming a semiconductor device
JP2014067886A (ja) * 2012-09-26 2014-04-17 Ps4 Luxco S A R L 半導体装置の製造方法
JP6087236B2 (ja) * 2013-07-24 2017-03-01 東京エレクトロン株式会社 成膜方法
KR102392819B1 (ko) * 2015-09-09 2022-05-02 삼성전자주식회사 커패시터 및 이를 포함하는 반도체 소자

Also Published As

Publication number Publication date
CN106952894A (zh) 2017-07-14
KR20170074194A (ko) 2017-06-29
JP2017117823A (ja) 2017-06-29
JP6576235B2 (ja) 2019-09-18
TW201801288A (zh) 2018-01-01
KR101946124B1 (ko) 2019-02-08
TWI745324B (zh) 2021-11-11
CN106952894B (zh) 2019-12-24
US20170179219A1 (en) 2017-06-22
US10199451B2 (en) 2019-02-05

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