SG10201610592VA - Lower electrode of dram capacitor and manufacturing method thereof - Google Patents
Lower electrode of dram capacitor and manufacturing method thereofInfo
- Publication number
- SG10201610592VA SG10201610592VA SG10201610592VA SG10201610592VA SG10201610592VA SG 10201610592V A SG10201610592V A SG 10201610592VA SG 10201610592V A SG10201610592V A SG 10201610592VA SG 10201610592V A SG10201610592V A SG 10201610592VA SG 10201610592V A SG10201610592V A SG 10201610592VA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- lower electrode
- dram capacitor
- dram
- capacitor
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Semiconductor Memories (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015248362A JP6576235B2 (en) | 2015-12-21 | 2015-12-21 | Lower electrode of DRAM capacitor and manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201610592VA true SG10201610592VA (en) | 2017-07-28 |
Family
ID=59065292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201610592VA SG10201610592VA (en) | 2015-12-21 | 2016-12-19 | Lower electrode of dram capacitor and manufacturing method thereof |
Country Status (6)
Country | Link |
---|---|
US (1) | US10199451B2 (en) |
JP (1) | JP6576235B2 (en) |
KR (1) | KR101946124B1 (en) |
CN (1) | CN106952894B (en) |
SG (1) | SG10201610592VA (en) |
TW (1) | TWI745324B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200114865A (en) | 2019-03-29 | 2020-10-07 | 삼성전자주식회사 | Semiconductor device comprising capacitor and fabrication method of the same |
EP4073831A4 (en) * | 2019-12-09 | 2024-01-10 | Entegris, Inc. | Diffusion barriers made from multiple barrier materials, and related articles and methods |
KR20220037053A (en) | 2020-09-17 | 2022-03-24 | 삼성전자주식회사 | Semiconductor devices having lower electrodes including an inner protective layer and an outer protective layer |
US11706486B2 (en) * | 2021-06-25 | 2023-07-18 | Rovi Guides, Inc. | Systems and methods to prevent or reduce ad fatigue using user preferences |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5514908A (en) * | 1994-04-29 | 1996-05-07 | Sgs-Thomson Microelectronics, Inc. | Integrated circuit with a titanium nitride contact barrier having oxygen stuffed grain boundaries |
US5895266A (en) * | 1996-02-26 | 1999-04-20 | Applied Materials, Inc. | Titanium nitride barrier layers |
JP3277855B2 (en) * | 1997-08-27 | 2002-04-22 | ヤマハ株式会社 | Method for forming wiring of semiconductor device |
US20020180046A1 (en) * | 1998-02-18 | 2002-12-05 | International Business Machines Corporation | Method for producing a flat interface for a metal-silicon contact barrier film |
US6225656B1 (en) * | 1998-12-01 | 2001-05-01 | Symetrix Corporation | Ferroelectric integrated circuit with protective layer incorporating oxygen and method for fabricating same |
JP3228262B2 (en) * | 1999-03-10 | 2001-11-12 | 日本電気株式会社 | Semiconductor device capacitor manufacturing method and semiconductor device capacitor |
US6824825B2 (en) * | 1999-09-13 | 2004-11-30 | Tokyo Electron Limited | Method for depositing metallic nitride series thin film |
JP2001156024A (en) * | 1999-09-13 | 2001-06-08 | Tokyo Electron Ltd | TiN-BASED THIN FILM AND FILM-FORMING METHOD THEREFOR, FILM-FORMING APPARATUS, FILM STRUCTURAL BODY INCLUDING TiN-BASED THIN FILM AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE |
JP3805603B2 (en) * | 2000-05-29 | 2006-08-02 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
US6495428B1 (en) * | 2001-07-11 | 2002-12-17 | Micron Technology, Inc. | Method of making a capacitor with oxygenated metal electrodes and high dielectric constant materials |
GB2386471B (en) | 2001-12-11 | 2004-04-07 | Samsung Electronics Co Ltd | A method for fabricating a one-cylinder stack capacitor |
US6919101B2 (en) * | 2003-02-04 | 2005-07-19 | Tegal Corporation | Method to deposit an impermeable film on porous low-k dielectric film |
KR100712502B1 (en) * | 2004-11-30 | 2007-05-02 | 삼성전자주식회사 | Metal-Insulator-Metal capacitor and method for manufacturing the same |
JP2007201083A (en) | 2006-01-25 | 2007-08-09 | Elpida Memory Inc | Process for fabricating capacitor |
US20080087930A1 (en) * | 2006-10-11 | 2008-04-17 | Jong-Cheol Lee | Capicitor Using Binary Metal Electrode, Semiconductor Device Having The Capacitor And Method of Fabricating The Same |
JP4805865B2 (en) * | 2007-03-19 | 2011-11-02 | シャープ株式会社 | Variable resistance element |
JP5832715B2 (en) * | 2008-09-04 | 2015-12-16 | 富士通セミコンダクター株式会社 | Manufacturing method of semiconductor device |
JP2011096818A (en) * | 2009-10-29 | 2011-05-12 | Fujitsu Semiconductor Ltd | Semiconductor apparatus and method of manufacturing the same |
US8994132B2 (en) * | 2010-09-27 | 2015-03-31 | Fujifilm Corporation | Photoelectric conversion element, solid-sate imaging element, imaging apparatus, and method for manufacturing photoelectric conversion element |
US20130149852A1 (en) | 2011-12-08 | 2013-06-13 | Tokyo Electron Limited | Method for forming a semiconductor device |
JP2014067886A (en) * | 2012-09-26 | 2014-04-17 | Ps4 Luxco S A R L | Method of manufacturing semiconductor device |
JP6087236B2 (en) * | 2013-07-24 | 2017-03-01 | 東京エレクトロン株式会社 | Deposition method |
KR102392819B1 (en) * | 2015-09-09 | 2022-05-02 | 삼성전자주식회사 | Capacitor and semiconductor device comprising the same |
-
2015
- 2015-12-21 JP JP2015248362A patent/JP6576235B2/en active Active
-
2016
- 2016-12-13 TW TW105141226A patent/TWI745324B/en active
- 2016-12-19 SG SG10201610592VA patent/SG10201610592VA/en unknown
- 2016-12-20 KR KR1020160174322A patent/KR101946124B1/en active IP Right Grant
- 2016-12-21 US US15/386,741 patent/US10199451B2/en active Active
- 2016-12-21 CN CN201611191916.5A patent/CN106952894B/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201801288A (en) | 2018-01-01 |
KR101946124B1 (en) | 2019-02-08 |
TWI745324B (en) | 2021-11-11 |
JP2017117823A (en) | 2017-06-29 |
CN106952894B (en) | 2019-12-24 |
US10199451B2 (en) | 2019-02-05 |
CN106952894A (en) | 2017-07-14 |
JP6576235B2 (en) | 2019-09-18 |
US20170179219A1 (en) | 2017-06-22 |
KR20170074194A (en) | 2017-06-29 |
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