SG10201610592VA - Lower electrode of dram capacitor and manufacturing method thereof - Google Patents

Lower electrode of dram capacitor and manufacturing method thereof

Info

Publication number
SG10201610592VA
SG10201610592VA SG10201610592VA SG10201610592VA SG10201610592VA SG 10201610592V A SG10201610592V A SG 10201610592VA SG 10201610592V A SG10201610592V A SG 10201610592VA SG 10201610592V A SG10201610592V A SG 10201610592VA SG 10201610592V A SG10201610592V A SG 10201610592VA
Authority
SG
Singapore
Prior art keywords
manufacturing
lower electrode
dram capacitor
dram
capacitor
Prior art date
Application number
SG10201610592VA
Inventor
Ishizaka Tadahiro
Koizumi Masaki
Sano Masaki
Hong Seokhyoung
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG10201610592VA publication Critical patent/SG10201610592VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
SG10201610592VA 2015-12-21 2016-12-19 Lower electrode of dram capacitor and manufacturing method thereof SG10201610592VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015248362A JP6576235B2 (en) 2015-12-21 2015-12-21 Lower electrode of DRAM capacitor and manufacturing method thereof

Publications (1)

Publication Number Publication Date
SG10201610592VA true SG10201610592VA (en) 2017-07-28

Family

ID=59065292

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201610592VA SG10201610592VA (en) 2015-12-21 2016-12-19 Lower electrode of dram capacitor and manufacturing method thereof

Country Status (6)

Country Link
US (1) US10199451B2 (en)
JP (1) JP6576235B2 (en)
KR (1) KR101946124B1 (en)
CN (1) CN106952894B (en)
SG (1) SG10201610592VA (en)
TW (1) TWI745324B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200114865A (en) 2019-03-29 2020-10-07 삼성전자주식회사 Semiconductor device comprising capacitor and fabrication method of the same
JP2023504743A (en) * 2019-12-09 2023-02-06 インテグリス・インコーポレーテッド Diffusion barriers made from multiple barrier materials and related articles and methods
KR20220037053A (en) 2020-09-17 2022-03-24 삼성전자주식회사 Semiconductor devices having lower electrodes including an inner protective layer and an outer protective layer
US11706486B2 (en) * 2021-06-25 2023-07-18 Rovi Guides, Inc. Systems and methods to prevent or reduce ad fatigue using user preferences

Family Cites Families (23)

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US5514908A (en) * 1994-04-29 1996-05-07 Sgs-Thomson Microelectronics, Inc. Integrated circuit with a titanium nitride contact barrier having oxygen stuffed grain boundaries
US5895266A (en) * 1996-02-26 1999-04-20 Applied Materials, Inc. Titanium nitride barrier layers
JP3277855B2 (en) * 1997-08-27 2002-04-22 ヤマハ株式会社 Method for forming wiring of semiconductor device
US20020180046A1 (en) * 1998-02-18 2002-12-05 International Business Machines Corporation Method for producing a flat interface for a metal-silicon contact barrier film
US6225656B1 (en) * 1998-12-01 2001-05-01 Symetrix Corporation Ferroelectric integrated circuit with protective layer incorporating oxygen and method for fabricating same
JP3228262B2 (en) * 1999-03-10 2001-11-12 日本電気株式会社 Semiconductor device capacitor manufacturing method and semiconductor device capacitor
US6824825B2 (en) * 1999-09-13 2004-11-30 Tokyo Electron Limited Method for depositing metallic nitride series thin film
JP2001156024A (en) * 1999-09-13 2001-06-08 Tokyo Electron Ltd TiN-BASED THIN FILM AND FILM-FORMING METHOD THEREFOR, FILM-FORMING APPARATUS, FILM STRUCTURAL BODY INCLUDING TiN-BASED THIN FILM AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE
JP3805603B2 (en) * 2000-05-29 2006-08-02 富士通株式会社 Semiconductor device and manufacturing method thereof
US6495428B1 (en) * 2001-07-11 2002-12-17 Micron Technology, Inc. Method of making a capacitor with oxygenated metal electrodes and high dielectric constant materials
GB2386471B (en) 2001-12-11 2004-04-07 Samsung Electronics Co Ltd A method for fabricating a one-cylinder stack capacitor
US6919101B2 (en) * 2003-02-04 2005-07-19 Tegal Corporation Method to deposit an impermeable film on porous low-k dielectric film
KR100712502B1 (en) * 2004-11-30 2007-05-02 삼성전자주식회사 Metal-Insulator-Metal capacitor and method for manufacturing the same
JP2007201083A (en) 2006-01-25 2007-08-09 Elpida Memory Inc Process for fabricating capacitor
US20080087930A1 (en) * 2006-10-11 2008-04-17 Jong-Cheol Lee Capicitor Using Binary Metal Electrode, Semiconductor Device Having The Capacitor And Method of Fabricating The Same
JP4805865B2 (en) * 2007-03-19 2011-11-02 シャープ株式会社 Variable resistance element
JP5832715B2 (en) * 2008-09-04 2015-12-16 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
JP2011096818A (en) * 2009-10-29 2011-05-12 Fujitsu Semiconductor Ltd Semiconductor apparatus and method of manufacturing the same
JP5677921B2 (en) * 2010-09-27 2015-02-25 富士フイルム株式会社 Method for manufacturing photoelectric conversion element
US20130149852A1 (en) 2011-12-08 2013-06-13 Tokyo Electron Limited Method for forming a semiconductor device
JP2014067886A (en) * 2012-09-26 2014-04-17 Ps4 Luxco S A R L Method of manufacturing semiconductor device
JP6087236B2 (en) * 2013-07-24 2017-03-01 東京エレクトロン株式会社 Deposition method
KR102392819B1 (en) * 2015-09-09 2022-05-02 삼성전자주식회사 Capacitor and semiconductor device comprising the same

Also Published As

Publication number Publication date
TWI745324B (en) 2021-11-11
JP6576235B2 (en) 2019-09-18
KR20170074194A (en) 2017-06-29
CN106952894A (en) 2017-07-14
CN106952894B (en) 2019-12-24
KR101946124B1 (en) 2019-02-08
TW201801288A (en) 2018-01-01
JP2017117823A (en) 2017-06-29
US20170179219A1 (en) 2017-06-22
US10199451B2 (en) 2019-02-05

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