SG10201609439YA - Systems and methods for frequency modulation of radiofrequency power supply for controlling plasma instability - Google Patents

Systems and methods for frequency modulation of radiofrequency power supply for controlling plasma instability

Info

Publication number
SG10201609439YA
SG10201609439YA SG10201609439YA SG10201609439YA SG10201609439YA SG 10201609439Y A SG10201609439Y A SG 10201609439YA SG 10201609439Y A SG10201609439Y A SG 10201609439YA SG 10201609439Y A SG10201609439Y A SG 10201609439YA SG 10201609439Y A SG10201609439Y A SG 10201609439YA
Authority
SG
Singapore
Prior art keywords
systems
methods
power supply
frequency modulation
radiofrequency power
Prior art date
Application number
SG10201609439YA
Other languages
English (en)
Inventor
Karim Ishtak
Sakiyama Yukinori
Rangineni Yaswanth
Augustyniak Edward
Keil Douglas
Chandrasekharan Ramesh
Lavoie Adrien
Leeser Karl
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201609439YA publication Critical patent/SG10201609439YA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155Frequency modulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/3299Feedback systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG10201609439YA 2015-11-17 2016-11-10 Systems and methods for frequency modulation of radiofrequency power supply for controlling plasma instability SG10201609439YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562256682P 2015-11-17 2015-11-17
US15/089,960 US9997422B2 (en) 2015-11-17 2016-04-04 Systems and methods for frequency modulation of radiofrequency power supply for controlling plasma instability

Publications (1)

Publication Number Publication Date
SG10201609439YA true SG10201609439YA (en) 2017-06-29

Family

ID=58690357

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201609439YA SG10201609439YA (en) 2015-11-17 2016-11-10 Systems and methods for frequency modulation of radiofrequency power supply for controlling plasma instability

Country Status (5)

Country Link
US (6) US10121708B2 (zh)
KR (4) KR20170066215A (zh)
CN (3) CN109994363B (zh)
SG (1) SG10201609439YA (zh)
TW (4) TWI727995B (zh)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10121708B2 (en) * 2015-11-17 2018-11-06 Lam Research Corporation Systems and methods for detection of plasma instability by optical diagnosis
US9824884B1 (en) * 2016-10-06 2017-11-21 Lam Research Corporation Method for depositing metals free ald silicon nitride films using halide-based precursors
TWI620228B (zh) * 2016-12-29 2018-04-01 財團法人工業技術研究院 電漿處理裝置與電漿處理方法
US20180334746A1 (en) * 2017-05-22 2018-11-22 Lam Research Corporation Wafer Edge Contact Hardware and Methods to Eliminate Deposition at Wafer Backside Edge and Notch
US10147610B1 (en) 2017-05-30 2018-12-04 Lam Research Corporation Substrate pedestal module including metallized ceramic tubes for RF and gas delivery
US10763143B2 (en) 2017-08-18 2020-09-01 Applied Materials, Inc. Processing tool having a monitoring device
JP6839789B2 (ja) * 2017-11-21 2021-03-10 ワトロー エレクトリック マニュファクチュアリング カンパニー 原子保護層を有するセラミックペデスタル
KR101918253B1 (ko) * 2018-01-26 2018-11-13 최운선 플라즈마 전원장치의 자가진단모듈 및 자가진단방법
WO2019165296A1 (en) * 2018-02-23 2019-08-29 Lam Research Corporation Rf current measurement in semiconductor processing tool
KR20200116160A (ko) 2018-02-23 2020-10-08 램 리써치 코포레이션 고 전력 회로로부터 연결해제 없이 커패시턴스 측정
CN111937132A (zh) * 2018-04-04 2020-11-13 朗姆研究公司 带密封表面的静电卡盘
CN113748482A (zh) * 2019-02-13 2021-12-03 朗姆研究公司 半导体处理中的异常等离子体事件的检测和缓解
EP3931146B1 (en) * 2019-02-26 2024-04-03 Maat Energy Company Device and method for improving specific energy requirement of plasma pyrolyzing or reforming systems
US11264219B2 (en) 2019-04-17 2022-03-01 Samsung Electronics Co., Ltd. Radical monitoring apparatus and plasma apparatus including the monitoring apparatus
CN112017931B (zh) * 2019-05-30 2022-03-22 北京北方华创微电子装备有限公司 应用于等离子体系统的方法及相关等离子体系统
KR20220024885A (ko) 2019-07-01 2022-03-03 생-고뱅 퍼포먼스 플라스틱스 코포레이션 프로파일 연결부
EP3796362A1 (en) * 2019-09-23 2021-03-24 TRUMPF Huettinger Sp. Z o. o. Method of plasma processing a substrate in a plasma chamber and plasma processing system
USD884855S1 (en) * 2019-10-30 2020-05-19 Applied Materials, Inc. Heater pedestal
CN110965048A (zh) * 2019-12-04 2020-04-07 江苏菲沃泰纳米科技有限公司 镀膜设备及其电极装置和应用
US20230054638A1 (en) * 2020-01-02 2023-02-23 The Regents Of The University Of California Ion gun and methods for surface treatment
KR20220152548A (ko) * 2020-03-20 2022-11-16 생-고뱅 퍼포먼스 플라스틱스 코포레이션 멸균 밀봉 장치
CN115039516B (zh) * 2020-03-31 2024-01-02 Atonarp株式会社 等离子体生成装置
US20210391146A1 (en) * 2020-06-11 2021-12-16 Applied Materials, Inc. Rf frequency control and ground path return in semiconductor process chambers
CN115916510A (zh) 2020-06-19 2023-04-04 美国圣戈班性能塑料公司 复合制品和形成复合制品的方法
CN113820531A (zh) * 2020-06-19 2021-12-21 拓荆科技股份有限公司 一种射频系统状态受控的半导体设备
US11990324B2 (en) * 2022-03-03 2024-05-21 Advanced Energy Industries, Inc. Adaptive predictive control system
CN115696709B (zh) * 2022-12-28 2023-03-21 江苏奥文仪器科技有限公司 监测射频辉光放电光谱仪放电室内等离子体稳定性的装置

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5688358A (en) * 1995-03-08 1997-11-18 Applied Materials, Inc. R.F. plasma reactor with larger-than-wafer pedestal conductor
US5764471A (en) * 1996-05-08 1998-06-09 Applied Materials, Inc. Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck
JP3801730B2 (ja) * 1997-05-09 2006-07-26 株式会社半導体エネルギー研究所 プラズマcvd装置及びそれを用いた薄膜形成方法
US6894245B2 (en) * 2000-03-17 2005-05-17 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
EP1409762A4 (en) * 2000-05-23 2007-02-28 Univ Virginia METHOD AND APPARATUS FOR VACUUM PLASMA DEPOSITION
US20030213559A1 (en) * 2002-05-20 2003-11-20 Applied Science And Technology, Inc. Stabilization of electronegative plasmas with feedback control of RF generator systems
KR100511854B1 (ko) * 2002-06-18 2005-09-02 아네르바 가부시키가이샤 정전 흡착 장치
US20040116080A1 (en) 2002-06-24 2004-06-17 Jin-Shyong Chen Time resolved RF plasma impedance meter
US20030015965A1 (en) * 2002-08-15 2003-01-23 Valery Godyak Inductively coupled plasma reactor
US7204888B2 (en) * 2003-05-01 2007-04-17 Applied Materials, Inc. Lift pin assembly for substrate processing
JP2005048259A (ja) * 2003-07-31 2005-02-24 Matsushita Electric Ind Co Ltd プラズマ処理装置
US7157857B2 (en) * 2003-12-19 2007-01-02 Advanced Energy Industries, Inc. Stabilizing plasma and generator interactions
JP4584572B2 (ja) * 2003-12-22 2010-11-24 株式会社日立ハイテクノロジーズ プラズマ処理装置および処理方法
US7323400B2 (en) * 2004-08-30 2008-01-29 Micron Technology, Inc. Plasma processing, deposition and ALD methods
US7292428B2 (en) * 2005-04-26 2007-11-06 Applied Materials, Inc. Electrostatic chuck with smart lift-pin mechanism for a plasma reactor
US7476556B2 (en) * 2005-08-11 2009-01-13 Micron Technology, Inc. Systems and methods for plasma processing of microfeature workpieces
US7705275B2 (en) * 2005-08-17 2010-04-27 Applied Materials, Inc. Substrate support having brazed plates and resistance heater
US20070245960A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion density
US20080008842A1 (en) * 2006-07-07 2008-01-10 Applied Materials, Inc. Method for plasma processing
US8083961B2 (en) * 2006-07-31 2011-12-27 Tokyo Electron Limited Method and system for controlling the uniformity of a ballistic electron beam by RF modulation
US7416677B2 (en) * 2006-08-11 2008-08-26 Tokyo Electron Limited Exhaust assembly for plasma processing system and method
US20080084650A1 (en) * 2006-10-04 2008-04-10 Applied Materials, Inc. Apparatus and method for substrate clamping in a plasma chamber
US9123509B2 (en) * 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
US20090148256A1 (en) * 2007-12-10 2009-06-11 Nanometrics Incorporated Support Pin with Dome Shaped Upper Surface
US20090236214A1 (en) * 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
TW201005825A (en) * 2008-05-30 2010-02-01 Panasonic Corp Plasma processing apparatus and method
KR101606736B1 (ko) * 2008-07-07 2016-03-28 램 리써치 코포레이션 플라즈마 프로세싱 챔버에서 플라즈마 불안정성을 검출하기 위한 패시브 용량성-결합된 정전식 (cce) 프로브 장치
JP2010238881A (ja) * 2009-03-31 2010-10-21 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
US8187938B2 (en) * 2009-04-13 2012-05-29 Hynix Semiconductor Inc. Non-volatile memory device and method for fabricating the same
US8674606B2 (en) * 2009-04-27 2014-03-18 Advanced Energy Industries, Inc. Detecting and preventing instabilities in plasma processes
IE20090628A1 (en) * 2009-08-17 2011-03-30 Lexas Res Ltd Method and apparatus for the detection of arc events during the plasma processing of a wafer, surface or substrate.
KR20110101483A (ko) * 2010-03-08 2011-09-16 삼성전자주식회사 플라즈마 장치의 제어 방법 및 시스템
US8741394B2 (en) * 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
US8502689B2 (en) * 2010-09-23 2013-08-06 Applied Materials, Inc. System and method for voltage-based plasma excursion detection
CN101985739A (zh) * 2010-10-21 2011-03-16 复旦大学 一种等离子体浸没注入设备的剂量控制系统
JP5490741B2 (ja) * 2011-03-02 2014-05-14 東京エレクトロン株式会社 基板搬送装置の位置調整方法、及び基板処理装置
US8371567B2 (en) * 2011-04-13 2013-02-12 Novellus Systems, Inc. Pedestal covers
US9059101B2 (en) * 2011-07-07 2015-06-16 Lam Research Corporation Radiofrequency adjustment for instability management in semiconductor processing
TWI500066B (zh) * 2011-07-27 2015-09-11 Hitachi High Tech Corp Plasma processing device
US20130098552A1 (en) * 2011-10-20 2013-04-25 Applied Materials, Inc. E-beam plasma source with profiled e-beam extraction grid for uniform plasma generation
US20130098872A1 (en) * 2011-10-20 2013-04-25 Applied Materials, Inc. Switched electron beam plasma source array for uniform plasma production
US9114666B2 (en) * 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US20130277333A1 (en) * 2012-04-24 2013-10-24 Applied Materials, Inc. Plasma processing using rf return path variable impedance controller with two-dimensional tuning space
US9316675B2 (en) * 2012-09-06 2016-04-19 Mks Instruments, Inc. Secondary plasma detection systems and methods
KR101466127B1 (ko) * 2012-12-06 2014-11-28 (주)화백엔지니어링 플라즈마 모니터링 장치
US9190247B2 (en) * 2013-02-21 2015-11-17 Applied Materials, Inc. Measurement of plural RF sensor devices in a pulsed RF plasma reactor
US9475710B2 (en) * 2013-03-14 2016-10-25 North Carolina State University Very high frequency (VHF) driven atmospheric plasma sources and point of use fertigation of irrigation water utilizing plasma production of nitrogen bearing species
GB2511840B (en) * 2013-03-15 2017-07-05 Thermo Electron Mfg Ltd Method and apparatus for control of a plasma for spectrometry
CN103531429B (zh) * 2013-10-31 2016-03-02 中微半导体设备(上海)有限公司 等离子体刻蚀装置及其刻蚀方法
WO2015106860A1 (en) * 2014-01-20 2015-07-23 Asml Netherlands B.V. Substrate holder and support table for lithography
JP6320248B2 (ja) * 2014-03-04 2018-05-09 東京エレクトロン株式会社 プラズマエッチング方法
US9595464B2 (en) * 2014-07-19 2017-03-14 Applied Materials, Inc. Apparatus and method for reducing substrate sliding in process chambers
US9412749B1 (en) * 2014-09-19 2016-08-09 Sandisk Technologies Llc Three dimensional memory device having well contact pillar and method of making thereof
US9386680B2 (en) * 2014-09-25 2016-07-05 Applied Materials, Inc. Detecting plasma arcs by monitoring RF reflected power in a plasma processing chamber
SG11201703129YA (en) * 2014-10-17 2017-05-30 Lam Res Corp Gas supply delivery arrangement including a gas splitter for tunable gas flow control
US10121708B2 (en) * 2015-11-17 2018-11-06 Lam Research Corporation Systems and methods for detection of plasma instability by optical diagnosis
US10818502B2 (en) * 2016-11-21 2020-10-27 Tokyo Electron Limited System and method of plasma discharge ignition to reduce surface particles
US20210210355A1 (en) * 2020-01-08 2021-07-08 Tokyo Electron Limited Methods of Plasma Processing Using a Pulsed Electron Beam

Also Published As

Publication number Publication date
US11393729B2 (en) 2022-07-19
CN109994363B (zh) 2021-10-26
CN109994363A (zh) 2019-07-09
CN106992107A (zh) 2017-07-28
KR20170066223A (ko) 2017-06-14
KR20170066216A (ko) 2017-06-14
CN107039255B (zh) 2020-11-06
TWI727995B (zh) 2021-05-21
TW201729235A (zh) 2017-08-16
TWI724057B (zh) 2021-04-11
US10510625B2 (en) 2019-12-17
TWI720059B (zh) 2021-03-01
CN107039255A (zh) 2017-08-11
TW201729243A (zh) 2017-08-16
US20170141000A1 (en) 2017-05-18
KR102069412B1 (ko) 2020-02-11
US20170141002A1 (en) 2017-05-18
KR20170066215A (ko) 2017-06-14
US9824941B2 (en) 2017-11-21
US10128160B2 (en) 2018-11-13
US10121708B2 (en) 2018-11-06
US20200098651A1 (en) 2020-03-26
CN106992107B (zh) 2019-02-19
US20170141001A1 (en) 2017-05-18
TW201729244A (zh) 2017-08-16
TW201731014A (zh) 2017-09-01
US9997422B2 (en) 2018-06-12
KR20170066224A (ko) 2017-06-14
TWI720060B (zh) 2021-03-01
US20180076100A1 (en) 2018-03-15
US20170140968A1 (en) 2017-05-18

Similar Documents

Publication Publication Date Title
SG10201609439YA (en) Systems and methods for frequency modulation of radiofrequency power supply for controlling plasma instability
GB201613784D0 (en) Systems and methods for controlling common mode voltage of multi-mode power convertor
EP3267547A4 (en) Method for controlling power grid frequency of multiple energy storage systems, and system therefor
EP3381099A4 (en) Switch-mode power supply and control apparatus of the same
ZA201505035B (en) System and method for controlling pcs voltage and frequency
GB2565469B (en) Non-thermal plasma emitters and devices for controlling
EP3258835A4 (en) Radiofrequency guidewire with controlled plasma generation and methods of use thereof
EP3306770A4 (en) Method and apparatus for controlling power supply
EP3249771A4 (en) Uninterrupted power supply and control method thereof
EP3435515A4 (en) POWER SUPPLY SYSTEM AND METHOD FOR CONTROLLING THEREOF
PL3010098T3 (pl) Wysokoczęstotliwościowe urządzenie zasilające i sposób zapłonu plazmy
EP3247369A4 (en) Repair and rejuvenation of tissues using platelet-rich plasma
EP3531528A4 (en) POWER SUPPLY SYSTEM AND ITS CONTROL METHOD
EP3183706A4 (en) System and method of controlling supply of electrical power
EP3159996B8 (en) Controller and method of controlling power supplied from a small power source to a power grid
EP3404798A4 (en) Power supply system and method for controlling same
EP3105852A4 (en) Integrated power supply and modulator for radio frequency power amplifiers
EP3311477A4 (en) POWER SUPPLY DEVICE, POWER SUPPLY SYSTEM, AND VOLTAGE ADJUSTMENT METHOD
GB2540492B (en) Control of power distribution system
GB201712717D0 (en) Energy supply system and method of operation
EP3380929A4 (en) METHOD AND SYSTEM FOR CONTROLLING A COOLING SYSTEM OF AN ENERGY SYSTEM
PT3092697T (pt) Método e dispositivo de regulação para regular uma frequência operacional de uma fonte de energia numa rede de tensão alternada
ZA202001128B (en) Methods and apparatuses for controlling timing of feedback transmissions
EP3222115A4 (en) Radio frequency heating apparatus using direct-digital radio frequency power control and fine-tune power control
EP3240228A4 (en) Control device and method for power supplying of communications network