SG10201605000PA - Methods and apparatus for cleaning substrate surfaces with atomic hydrogen - Google Patents

Methods and apparatus for cleaning substrate surfaces with atomic hydrogen

Info

Publication number
SG10201605000PA
SG10201605000PA SG10201605000PA SG10201605000PA SG10201605000PA SG 10201605000P A SG10201605000P A SG 10201605000PA SG 10201605000P A SG10201605000P A SG 10201605000PA SG 10201605000P A SG10201605000P A SG 10201605000PA SG 10201605000P A SG10201605000P A SG 10201605000PA
Authority
SG
Singapore
Prior art keywords
methods
substrate surfaces
atomic hydrogen
cleaning substrate
cleaning
Prior art date
Application number
SG10201605000PA
Other languages
English (en)
Inventor
Cruz Joe Griffith
Jeongwon Park
Pravin K Narwankar
Nate Si Nguyen
Hanh Nguyen
To Chan
Jingjing Xu
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10201605000PA publication Critical patent/SG10201605000PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
SG10201605000PA 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen SG10201605000PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161579830P 2011-12-23 2011-12-23
US13/723,409 US20130160794A1 (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen

Publications (1)

Publication Number Publication Date
SG10201605000PA true SG10201605000PA (en) 2016-08-30

Family

ID=48653348

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201605000PA SG10201605000PA (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen
SG11201403005TA SG11201403005TA (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201403005TA SG11201403005TA (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen

Country Status (6)

Country Link
US (2) US20130160794A1 (https=)
JP (1) JP6181075B2 (https=)
KR (1) KR20140107580A (https=)
CN (1) CN104025264B (https=)
SG (2) SG10201605000PA (https=)
WO (1) WO2013096748A1 (https=)

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US20120312326A1 (en) * 2011-06-10 2012-12-13 Applied Materials, Inc. Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber
US9416450B2 (en) * 2012-10-24 2016-08-16 Applied Materials, Inc. Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber
WO2014149962A1 (en) 2013-03-14 2014-09-25 Applied Materials, Inc. Apparatus for coupling a hot wire source to a process chamber
JP6379184B2 (ja) 2013-09-25 2018-08-22 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 基板をボンディングする装置および方法
CN106688080A (zh) * 2014-09-08 2017-05-17 三菱电机株式会社 半导体退火装置
JP6690915B2 (ja) 2014-10-06 2020-04-28 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド 極低温流体混合物で基板を処理するシステムおよび方法
US10625280B2 (en) 2014-10-06 2020-04-21 Tel Fsi, Inc. Apparatus for spraying cryogenic fluids
US10014191B2 (en) 2014-10-06 2018-07-03 Tel Fsi, Inc. Systems and methods for treating substrates with cryogenic fluid mixtures
US20160138161A1 (en) * 2014-11-19 2016-05-19 Applied Materials, Inc. Radical assisted cure of dielectric films
CN104865700B (zh) * 2015-04-29 2017-07-14 中国科学院长春光学精密机械与物理研究所 光学元件表面碳污染的ArH清洗方法
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
CN107026100A (zh) * 2016-02-01 2017-08-08 中芯国际集成电路制造(上海)有限公司 半导体制造设备以及制造方法
US10116255B2 (en) 2016-06-22 2018-10-30 Solar Maid Of Northern Arizona Llc Cleaning system for solar panels
US10513778B2 (en) 2017-09-22 2019-12-24 Applied Materials, Inc. Native or uncontrolled oxide reduction by HWCVD H* using specific metal chamber liner
US11469097B2 (en) 2018-04-09 2022-10-11 Applied Materials, Inc. Carbon hard masks for patterning applications and methods related thereto
US11430661B2 (en) * 2018-12-28 2022-08-30 Applied Materials, Inc. Methods and apparatus for enhancing selectivity of titanium and titanium silicides during chemical vapor deposition
CN114220721B (zh) * 2021-12-14 2025-02-11 深圳市荣者光电科技发展有限公司 一种GaAs光电阴极原子级洁净度的获得方法

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US5409543A (en) * 1992-12-22 1995-04-25 Sandia Corporation Dry soldering with hot filament produced atomic hydrogen
US5350480A (en) * 1993-07-23 1994-09-27 Aspect International, Inc. Surface cleaning and conditioning using hot neutral gas beam array
JPH09190979A (ja) * 1996-01-10 1997-07-22 Nec Corp 選択シリコンエピタキシャル成長方法及び成長装置
US6395099B1 (en) * 1999-02-08 2002-05-28 Micron Technology Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces
JP4459329B2 (ja) * 1999-08-05 2010-04-28 キヤノンアネルバ株式会社 付着膜の除去方法及び除去装置
US20020104481A1 (en) * 2000-12-06 2002-08-08 Chiang Tony P. System and method for modulated ion-induced atomic layer deposition (MII-ALD)
KR20020083767A (ko) * 2001-04-30 2002-11-04 주식회사 하이닉스반도체 선택적 에피택셜 성장 공정에서의 기판 세정 방법
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Also Published As

Publication number Publication date
CN104025264A (zh) 2014-09-03
WO2013096748A1 (en) 2013-06-27
SG11201403005TA (en) 2014-09-26
US20130160794A1 (en) 2013-06-27
CN104025264B (zh) 2017-09-12
JP2015503841A (ja) 2015-02-02
KR20140107580A (ko) 2014-09-04
JP6181075B2 (ja) 2017-08-16
US20150311061A1 (en) 2015-10-29

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