SG10201603687RA - Solid-state image sensor and camera - Google Patents

Solid-state image sensor and camera

Info

Publication number
SG10201603687RA
SG10201603687RA SG10201603687RA SG10201603687RA SG10201603687RA SG 10201603687R A SG10201603687R A SG 10201603687RA SG 10201603687R A SG10201603687R A SG 10201603687RA SG 10201603687R A SG10201603687R A SG 10201603687RA SG 10201603687R A SG10201603687R A SG 10201603687RA
Authority
SG
Singapore
Prior art keywords
camera
solid
image sensor
state image
state
Prior art date
Application number
SG10201603687RA
Other languages
English (en)
Inventor
Kawabata Kazunari
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of SG10201603687RA publication Critical patent/SG10201603687RA/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0043—Inhomogeneous or irregular arrays, e.g. varying shape, size, height
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B2003/0093—Simple or compound lenses characterised by the shape

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
SG10201603687RA 2015-05-14 2016-05-10 Solid-state image sensor and camera SG10201603687RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015099511A JP6506614B2 (ja) 2015-05-14 2015-05-14 固体撮像装置およびカメラ

Publications (1)

Publication Number Publication Date
SG10201603687RA true SG10201603687RA (en) 2016-12-29

Family

ID=55802223

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201603687RA SG10201603687RA (en) 2015-05-14 2016-05-10 Solid-state image sensor and camera

Country Status (9)

Country Link
US (1) US10114151B2 (https=)
EP (1) EP3093887B1 (https=)
JP (1) JP6506614B2 (https=)
KR (1) KR20160134502A (https=)
CN (1) CN106161891B (https=)
BR (1) BR102016009246A2 (https=)
PH (1) PH12016000181A1 (https=)
RU (1) RU2650729C2 (https=)
SG (1) SG10201603687RA (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10205894B2 (en) 2015-09-11 2019-02-12 Canon Kabushiki Kaisha Imaging device and imaging system
JP6688165B2 (ja) 2016-06-10 2020-04-28 キヤノン株式会社 撮像装置及び撮像システム
JP6776011B2 (ja) 2016-06-10 2020-10-28 キヤノン株式会社 撮像装置及び撮像システム
JP6727938B2 (ja) 2016-06-10 2020-07-22 キヤノン株式会社 撮像装置、撮像装置の制御方法、及び撮像システム
JP7013119B2 (ja) 2016-07-21 2022-01-31 キヤノン株式会社 固体撮像素子、固体撮像素子の製造方法、及び撮像システム
US10212576B2 (en) 2016-09-08 2019-02-19 Samsung Electronics Co., Ltd. Near field communication device
CN109842766B (zh) * 2018-12-28 2021-05-18 上海集成电路研发中心有限公司 一种极坐标图像传感器及其进行图像处理的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5662401A (en) * 1995-12-13 1997-09-02 Philips Electronics North America Corporation Integrating lens array and image forming method for improved optical efficiency
US7375892B2 (en) * 2003-10-09 2008-05-20 Micron Technology, Inc. Ellipsoidal gapless microlens array and method of fabrication
JP2007335723A (ja) 2006-06-16 2007-12-27 Fujifilm Corp 固体撮像素子用マイクロレンズ及びその製造方法
US20080011936A1 (en) 2006-07-14 2008-01-17 Visera Technologies Company Ltd, Roc Imaging sensor having microlenses of different radii of curvature
JP4941233B2 (ja) 2007-10-31 2012-05-30 大日本印刷株式会社 固体撮像素子およびそれを用いた撮像装置
US7687757B1 (en) * 2009-01-29 2010-03-30 Visera Technologies Company Limited Design of microlens on pixel array
EP2362257B1 (en) 2009-11-20 2016-08-17 FUJIFILM Corporation Solid-state imaging device
GB2498972A (en) * 2012-02-01 2013-08-07 St Microelectronics Ltd Pixel and microlens array
JP5791664B2 (ja) * 2013-06-28 2015-10-07 キヤノン株式会社 光学素子アレイ、及び固体撮像装置
JP2015109314A (ja) 2013-12-03 2015-06-11 株式会社東芝 固体撮像装置
JP2016058538A (ja) 2014-09-09 2016-04-21 キヤノン株式会社 固体撮像装置およびカメラ

Also Published As

Publication number Publication date
JP2016219469A (ja) 2016-12-22
PH12016000181A1 (en) 2018-01-22
CN106161891B (zh) 2019-07-30
US20160334550A1 (en) 2016-11-17
EP3093887B1 (en) 2018-01-24
RU2650729C2 (ru) 2018-04-17
JP6506614B2 (ja) 2019-04-24
US10114151B2 (en) 2018-10-30
BR102016009246A2 (pt) 2016-11-16
KR20160134502A (ko) 2016-11-23
RU2016118405A (ru) 2017-11-16
EP3093887A1 (en) 2016-11-16
CN106161891A (zh) 2016-11-23

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