SG10201602528SA - Method For Preparing Halftone Phase Shift Photomask Blank - Google Patents

Method For Preparing Halftone Phase Shift Photomask Blank

Info

Publication number
SG10201602528SA
SG10201602528SA SG10201602528SA SG10201602528SA SG10201602528SA SG 10201602528S A SG10201602528S A SG 10201602528SA SG 10201602528S A SG10201602528S A SG 10201602528SA SG 10201602528S A SG10201602528S A SG 10201602528SA SG 10201602528S A SG10201602528S A SG 10201602528SA
Authority
SG
Singapore
Prior art keywords
phase shift
photomask blank
halftone phase
shift photomask
preparing
Prior art date
Application number
SG10201602528SA
Other languages
English (en)
Inventor
Takuro Kosaka
Yukio Inazuki
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2015074783A external-priority patent/JP6332109B2/ja
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG10201602528SA publication Critical patent/SG10201602528SA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/28—Phase shift masks [PSM]; PSM blanks; Preparation thereof with three or more diverse phases on the same PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physical Vapour Deposition (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
SG10201602528SA 2015-03-31 2016-03-31 Method For Preparing Halftone Phase Shift Photomask Blank SG10201602528SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015072925 2015-03-31
JP2015074783A JP6332109B2 (ja) 2015-03-31 2015-04-01 ハーフトーン位相シフト型フォトマスクブランクの製造方法

Publications (1)

Publication Number Publication Date
SG10201602528SA true SG10201602528SA (en) 2016-10-28

Family

ID=55808346

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201602528SA SG10201602528SA (en) 2015-03-31 2016-03-31 Method For Preparing Halftone Phase Shift Photomask Blank

Country Status (5)

Country Link
US (1) US9778559B2 (zh)
EP (1) EP3086174B1 (zh)
KR (1) KR101900548B1 (zh)
CN (1) CN106019812B (zh)
SG (1) SG10201602528SA (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6500791B2 (ja) 2016-01-22 2019-04-17 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びその製造方法
JP6677139B2 (ja) * 2016-09-28 2020-04-08 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランクの製造方法
JP6672204B2 (ja) * 2017-03-14 2020-03-25 キヤノン株式会社 反応性スパッタリングの成膜装置、および成膜方法
JP6819546B2 (ja) 2017-11-13 2021-01-27 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
JP2019094534A (ja) * 2017-11-21 2019-06-20 キヤノン株式会社 スパッタリング装置及び膜の製造方法
JP7192731B2 (ja) * 2019-09-27 2022-12-20 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、その製造方法、及びハーフトーン位相シフト型フォトマスク

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3064769B2 (ja) 1992-11-21 2000-07-12 アルバック成膜株式会社 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法
JPH11168071A (ja) * 1997-12-03 1999-06-22 Sony Corp Ｔｉ／ＴｉＮ膜の連続形成方法
KR100526737B1 (ko) * 2000-01-12 2005-11-08 신에쓰 가가꾸 고교 가부시끼가이샤 위상 시프트 마스크 블랭크, 위상 시프트 마스크 및이들의 제조 방법
JP4711317B2 (ja) * 2000-09-12 2011-06-29 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法、位相シフトマスクの製造方法、及びパターン転写方法
JP2002258458A (ja) * 2000-12-26 2002-09-11 Hoya Corp ハーフトーン型位相シフトマスク及びマスクブランク
DE602006021102D1 (de) 2005-07-21 2011-05-19 Shinetsu Chemical Co Photomaskenrohling, Photomaske und deren Herstellungsverfahren
JP4933753B2 (ja) 2005-07-21 2012-05-16 信越化学工業株式会社 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法
JP4551344B2 (ja) 2006-03-02 2010-09-29 信越化学工業株式会社 フォトマスクブランクおよびフォトマスク
JP4509050B2 (ja) 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
US20080041716A1 (en) * 2006-08-18 2008-02-21 Schott Lithotec Usa Corporation Methods for producing photomask blanks, cluster tool apparatus for producing photomask blanks and the resulting photomask blanks from such methods and apparatus
JP4714180B2 (ja) 2007-05-01 2011-06-29 株式会社東芝 フォトマスク管理方法、フォトマスク洗浄可能回数生成方法、及びフォトマスク管理システム
TWI446103B (zh) * 2008-09-30 2014-07-21 Hoya Corp A mask substrate, a photomask and a method of manufacturing the same, and a method of manufacturing the semiconductor element
JP4941684B2 (ja) * 2009-03-27 2012-05-30 信越化学工業株式会社 フォトマスクブランク及びその加工方法
KR102211544B1 (ko) * 2013-01-15 2021-02-02 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법
JP6373607B2 (ja) 2013-03-08 2018-08-15 Hoya株式会社 マスクブランクの製造方法および位相シフトマスクの製造方法
JP2016035559A (ja) * 2014-08-04 2016-03-17 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びその製造方法

Also Published As

Publication number Publication date
EP3086174B1 (en) 2017-11-15
KR20160117319A (ko) 2016-10-10
US20160291454A1 (en) 2016-10-06
CN106019812B (zh) 2021-03-12
CN106019812A (zh) 2016-10-12
US9778559B2 (en) 2017-10-03
KR101900548B1 (ko) 2018-09-19
EP3086174A1 (en) 2016-10-26

Similar Documents

Publication Publication Date Title
SG10201602447WA (en) Phase Shift Mask Blank, Phase Shift Mask, And Blank Preparing Method
SG10201602465XA (en) Method For Preparing Halftone Phase Shift Photomask Blank
SG10201407188WA (en) Halftone Phase Shift Photomask Blank, Halftone Phase Shift Photomask And Pattern Exposure Method
SG10201602443QA (en) Halftone Phase Shift Mask Blank And Halftone Phase Shift Mask
SG10201607880PA (en) METHOD FOR FORMING TiON FILM
SG10201913035VA (en) Halftone Phase Shift Mask Blank And Halftone Phase Shift Mask
SG10201700495QA (en) Halftone Phase Shift Photomask Blank And Making Method
SG10201607091XA (en) Photomask Blank
SG10201602528SA (en) Method For Preparing Halftone Phase Shift Photomask Blank
SG10201607089YA (en) Photomask Blank
SG10201602448YA (en) Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask, And Pattern Exposure Method
EP3666729C0 (en) PROCESS FOR THE PRODUCTION OF NANO-SULFUR
IL266044B (en) Method for the production of 3-alkylsulfanyl-2-chloro-n-(1-alkyl-h1-tetrazol-5-yl)-4-trifluoromethyl-benzamides
SG10201606198VA (en) Halftone Phase Shift Photomask Blank, Making Method, and Halftone Phase Shift Photomask
SG10201701484PA (en) Photomask Blank and Method for Preparing Photomask
EP3511369C0 (en) PROCESS FOR MAKING A FOIL
SG10201708004UA (en) Halftone Phase Shift Photomask Blank, Making Method, And Halftone Phase Shift Photomask
HK1249098A1 (zh) 用於生產氟美他酚的方法
SG11201808985RA (en) Method for producing printed matter
EP3424684A4 (en) METHOD FOR FORMING A PATTERN
SG11202001257SA (en) Method for producing instant noodles
SG10201606180YA (en) Photomask Blank And Method For Preparing Photomask
HUE048474T2 (hu) Eljárás oxidifluormetilén vázzal rendelkezõ vegyület elõállítására
SG11201907182QA (en) Method for producing perfluoroalkadiene compounds
IL255093A0 (en) A method for the production of levoglucosenon