SG10201507984VA - 'multi-radiofrequency impedance control for plasma uniformity tuning - Google Patents

'multi-radiofrequency impedance control for plasma uniformity tuning

Info

Publication number
SG10201507984VA
SG10201507984VA SG10201507984VA SG10201507984VA SG10201507984VA SG 10201507984V A SG10201507984V A SG 10201507984VA SG 10201507984V A SG10201507984V A SG 10201507984VA SG 10201507984V A SG10201507984V A SG 10201507984VA SG 10201507984V A SG10201507984V A SG 10201507984VA
Authority
SG
Singapore
Prior art keywords
impedance control
plasma uniformity
uniformity tuning
radiofrequency impedance
radiofrequency
Prior art date
Application number
SG10201507984VA
Other languages
English (en)
Inventor
Marakhtanov Alexei
Dhindsa Rajinder
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201507984VA publication Critical patent/SG10201507984VA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/40—Automatic matching of load impedance to source impedance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Filters And Equalizers (AREA)
SG10201507984VA 2012-03-28 2013-03-26 'multi-radiofrequency impedance control for plasma uniformity tuning SG10201507984VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/433,004 US9881772B2 (en) 2012-03-28 2012-03-28 Multi-radiofrequency impedance control for plasma uniformity tuning

Publications (1)

Publication Number Publication Date
SG10201507984VA true SG10201507984VA (en) 2015-10-29

Family

ID=49235589

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201507984VA SG10201507984VA (en) 2012-03-28 2013-03-26 'multi-radiofrequency impedance control for plasma uniformity tuning
SG2013023007A SG193760A1 (en) 2012-03-28 2013-03-26 Multi-radiofrequency impedance control for plasma uniformity tuning

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2013023007A SG193760A1 (en) 2012-03-28 2013-03-26 Multi-radiofrequency impedance control for plasma uniformity tuning

Country Status (6)

Country Link
US (2) US9881772B2 (https=)
JP (2) JP2013225672A (https=)
KR (1) KR102153141B1 (https=)
CN (1) CN103367206B (https=)
SG (2) SG10201507984VA (https=)
TW (2) TWI538571B (https=)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130059448A1 (en) * 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US9083182B2 (en) 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US9263240B2 (en) 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
KR101971312B1 (ko) * 2011-11-23 2019-04-22 램 리써치 코포레이션 다중 존 가스 주입 상부 전극 시스템
KR102011535B1 (ko) 2011-11-24 2019-08-16 램 리써치 코포레이션 가요성 있는 대칭적 rf 복귀 스트랩을 갖는 플라즈마 프로세싱 챔버
KR102152811B1 (ko) * 2013-11-06 2020-09-07 어플라이드 머티어리얼스, 인코포레이티드 Ｄｃ 바이어스 변조에 의한 입자 발생 억제기
US10892140B2 (en) 2018-07-27 2021-01-12 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
JP6574547B2 (ja) 2013-12-12 2019-09-11 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2015162266A (ja) * 2014-02-26 2015-09-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10047438B2 (en) 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
US10410889B2 (en) 2014-07-25 2019-09-10 Applied Materials, Inc. Systems and methods for electrical and magnetic uniformity and skew tuning in plasma processing reactors
US9595424B2 (en) * 2015-03-02 2017-03-14 Lam Research Corporation Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes
US9761414B2 (en) * 2015-10-08 2017-09-12 Lam Research Corporation Uniformity control circuit for use within an impedance matching circuit
KR102092213B1 (ko) 2016-03-23 2020-03-23 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. 임피던스 매칭 시스템, 임피던스 매칭 방법 및 반도체 공정장비
KR102793197B1 (ko) * 2016-04-13 2025-04-07 램 리써치 코포레이션 Rf 생성기의 복수의 상태들 동안 단계적 방식으로 임피던스 매칭 네트워크를 튜닝하기 위한 시스템들 및 방법들
US10229816B2 (en) * 2016-05-24 2019-03-12 Mks Instruments, Inc. Solid-state impedance matching systems including a hybrid tuning network with a switchable coarse tuning network and a varactor fine tuning network
US11227745B2 (en) 2018-08-10 2022-01-18 Eagle Harbor Technologies, Inc. Plasma sheath control for RF plasma reactors
US11004660B2 (en) * 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
US9852889B1 (en) * 2016-06-22 2017-12-26 Lam Research Corporation Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring
US10424467B2 (en) * 2017-03-13 2019-09-24 Applied Materials, Inc. Smart RF pulsing tuning using variable frequency generators
US10546724B2 (en) * 2017-05-10 2020-01-28 Mks Instruments, Inc. Pulsed, bidirectional radio frequency source/load
KR102475069B1 (ko) * 2017-06-30 2022-12-06 삼성전자주식회사 반도체 제조 장치, 이의 동작 방법
CN118315255A (zh) * 2017-08-14 2024-07-09 株式会社国际电气 等离子体生成装置
US10002746B1 (en) * 2017-09-13 2018-06-19 Lam Research Corporation Multi regime plasma wafer processing to increase directionality of ions
US10342114B2 (en) * 2017-09-15 2019-07-02 Axcelis Technologies, Inc. RF resonator for ion beam acceleration
US11551909B2 (en) * 2017-10-02 2023-01-10 Tokyo Electron Limited Ultra-localized and plasma uniformity control in a plasma processing system
US20190108976A1 (en) * 2017-10-11 2019-04-11 Advanced Energy Industries, Inc. Matched source impedance driving system and method of operating the same
US10264663B1 (en) * 2017-10-18 2019-04-16 Lam Research Corporation Matchless plasma source for semiconductor wafer fabrication
US11881381B2 (en) 2018-02-23 2024-01-23 Lam Research Corporation Capacitance measurement without disconnecting from high power circuit
CN110323117B (zh) * 2018-03-28 2024-06-21 三星电子株式会社 等离子体处理设备
US11532458B2 (en) * 2018-05-30 2022-12-20 Toshiba Mitsubishi-Electric Industrial Systems Corporation Active gas generation apparatus
KR102487930B1 (ko) 2018-07-23 2023-01-12 삼성전자주식회사 기판 지지 장치 및 이를 포함하는 플라즈마 처리 장치
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
US11222767B2 (en) 2018-07-27 2022-01-11 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US11810761B2 (en) 2018-07-27 2023-11-07 Eagle Harbor Technologies, Inc. Nanosecond pulser ADC system
US12456604B2 (en) 2019-12-24 2025-10-28 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems
US11282679B2 (en) * 2019-05-22 2022-03-22 Samsung Electronics Co., Ltd. Plasma control apparatus and plasma processing system including the same
US11158488B2 (en) * 2019-06-26 2021-10-26 Mks Instruments, Inc. High speed synchronization of plasma source/bias power delivery
TWI887254B (zh) * 2019-07-17 2025-06-21 美商得昇科技股份有限公司 利用可調式電漿電位的可變模式電漿室
US11043362B2 (en) * 2019-09-17 2021-06-22 Tokyo Electron Limited Plasma processing apparatuses including multiple electron sources
CN113170567B (zh) 2019-11-12 2023-11-28 东芝三菱电机产业系统株式会社 活性气体生成装置
TWI778449B (zh) 2019-11-15 2022-09-21 美商鷹港科技股份有限公司 高電壓脈衝電路
US11839014B2 (en) 2019-11-27 2023-12-05 Toshiba Mitsubishi-Electric Industrial Systems Corporation Active gas generating apparatus
EP4486072A3 (en) 2019-12-24 2025-04-09 Eagle Harbor Technologies, Inc. Nanosecond pulser rf isolation for plasma systems
JP7736446B2 (ja) 2020-05-07 2025-09-09 エーエスエム・アイピー・ホールディング・ベー・フェー 同調回路を備える反応器システム
US11967484B2 (en) 2020-07-09 2024-04-23 Eagle Harbor Technologies, Inc. Ion current droop compensation
US11749505B2 (en) 2021-02-23 2023-09-05 Applied Materials, Inc. Methods and apparatus for processing a substrate
US11538663B2 (en) 2021-02-23 2022-12-27 Applied Materials, Inc. Methods and apparatus for processing a substrate
JP7560214B2 (ja) * 2021-03-11 2024-10-02 東京エレクトロン株式会社 着火方法及びプラズマ処理装置
EP4105963A1 (en) * 2021-06-17 2022-12-21 Impedans Ltd A controller for a matching unit of a plasma processing system
KR102929923B1 (ko) 2021-09-23 2026-02-24 삼성전자주식회사 플라즈마 제어 장치 및 플라즈마 처리 시스템
CN114792619B (zh) * 2022-05-07 2026-03-20 北京北方华创微电子装备有限公司 半导体工艺腔室
US11824542B1 (en) 2022-06-29 2023-11-21 Eagle Harbor Technologies, Inc. Bipolar high voltage pulser
JP7833099B2 (ja) 2022-09-29 2026-03-18 イーグル ハーバー テクノロジーズ，インク． 高電圧プラズマ制御
KR102854932B1 (ko) 2023-07-03 2025-09-05 코스맥스 주식회사 비피도박테리움 애니멀리스 서브스페시스 락티스 균주 및 그의 모발 또는 두피 상태 개선 용도
JP7695977B2 (ja) 2023-08-23 2025-06-19 株式会社アルバック プラズマ処理装置およびその制御方法
US20250210304A1 (en) * 2023-12-20 2025-06-26 Applied Materials, Inc. Electrode and Coil Configurations For Processing Chambers and Related Chamber Kits, Apparatus, and Methods For Semiconductor Manufacturing
WO2026015311A1 (en) * 2024-07-09 2026-01-15 Lam Research Corporation Systems and methods for providing an hf rf signal to an upper electrode extension
WO2026043814A1 (en) * 2024-08-22 2026-02-26 Lam Research Corporation Systems and methods for splitting top mhz power

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5460684A (en) * 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US6379576B2 (en) * 1997-11-17 2002-04-30 Mattson Technology, Inc. Systems and methods for variable mode plasma enhanced processing of semiconductor wafers
JP4456694B2 (ja) * 1999-06-22 2010-04-28 東京エレクトロン株式会社 プラズマ処理装置
JP2001144077A (ja) 1999-11-15 2001-05-25 Applied Materials Inc プラズマ処理装置及び方法
US6770166B1 (en) * 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor
US6920729B2 (en) * 2002-07-03 2005-07-26 Peter J. Konopka Composite wall tie
CN101160014B (zh) * 2002-07-12 2011-12-28 东京毅力科创株式会社 等离子体处理装置和可变阻抗装置的校正方法
JP4370789B2 (ja) 2002-07-12 2009-11-25 東京エレクトロン株式会社 プラズマ処理装置及び可変インピーダンス手段の校正方法
US7144521B2 (en) 2003-08-22 2006-12-05 Lam Research Corporation High aspect ratio etch using modulation of RF powers of various frequencies
US7405521B2 (en) 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
US7169256B2 (en) 2004-05-28 2007-01-30 Lam Research Corporation Plasma processor with electrode responsive to multiple RF frequencies
JP5254533B2 (ja) 2006-03-31 2013-08-07 東京エレクトロン株式会社 プラズマ処理装置と方法
US7611603B2 (en) 2006-03-31 2009-11-03 Tokyo Electron Limited Plasma processing apparatus having impedance varying electrodes
US7264688B1 (en) * 2006-04-24 2007-09-04 Applied Materials, Inc. Plasma reactor apparatus with independent capacitive and toroidal plasma sources
US7837826B2 (en) * 2006-07-18 2010-11-23 Lam Research Corporation Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof
JP5199595B2 (ja) * 2007-03-27 2013-05-15 東京エレクトロン株式会社 プラズマ処理装置及びそのクリーニング方法
US20170213734A9 (en) * 2007-03-30 2017-07-27 Alexei Marakhtanov Multifrequency capacitively coupled plasma etch chamber
CN101478857A (zh) * 2008-01-04 2009-07-08 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理装置
US20090230089A1 (en) * 2008-03-13 2009-09-17 Kallol Bera Electrical control of plasma uniformity using external circuit
JP2010238730A (ja) 2009-03-30 2010-10-21 Tokyo Electron Ltd プラズマ処理装置
US8652298B2 (en) * 2011-11-21 2014-02-18 Lam Research Corporation Triode reactor design with multiple radiofrequency powers

Also Published As

Publication number Publication date
US20130260567A1 (en) 2013-10-03
TW201349946A (zh) 2013-12-01
JP2013225672A (ja) 2013-10-31
US20180166256A1 (en) 2018-06-14
TW201622492A (zh) 2016-06-16
JP2018164093A (ja) 2018-10-18
TWI538571B (zh) 2016-06-11
TWI589192B (zh) 2017-06-21
SG193760A1 (en) 2013-10-30
CN103367206A (zh) 2013-10-23
US10593516B2 (en) 2020-03-17
JP6623256B2 (ja) 2019-12-18
KR102153141B1 (ko) 2020-09-07
US9881772B2 (en) 2018-01-30
KR20130110104A (ko) 2013-10-08
CN103367206B (zh) 2017-07-18

Similar Documents

Publication Publication Date Title
SG10201507984VA (en) 'multi-radiofrequency impedance control for plasma uniformity tuning
EP2666181A1 (de) Plasma-behandlungsvorrichtung zur herstellung von beschichtungen
EP2565314A3 (en) Laundry treating apparatus
EP2678469A4 (en) Laundry treatment apparatus
GB201505407D0 (en) Methods for discovering therapeutic targets
ZA201408385B (en) Plasma treatment device
GB2549036B (en) RF ion guides
SG11201504651QA (en) Plasma source
EP2707598A4 (en) PLASMA MICRO-THRUSTER
EP2592911A4 (en) PLASMA GENERATION DEVICE
SG11201500389UA (en) Device for treating an object with plasma
SG11201504014TA (en) Physical vapor deposition apparatus
EP2672102A4 (en) Plasma device
EP2667922A1 (en) Shield apparatus
GB201316178D0 (en) Plasma source
EP2673564A1 (en) Inductive bath plasma cupola
PL2564412T3 (pl) Elektroda do procesu plazmowego DBD
EP2725603A4 (en) MICROWAVE PLASMA CAVITY
EP3085807A4 (en) Plasma nitriding apparatus
PL2929932T3 (pl) Urządzenie do plazmowej obróbki proszku
EP2735370B8 (de) Schleißteilwechselvorrichtung
AU346156S (en) Plasma gun
AU345774S (en) Plasma gun
SG11201504570SA (en) Process for transitioning
GB201100425D0 (en) Process & dressing