SG10201505311PA - Movable microchamber system with gas curtain - Google Patents
Movable microchamber system with gas curtainInfo
- Publication number
- SG10201505311PA SG10201505311PA SG10201505311PA SG10201505311PA SG10201505311PA SG 10201505311P A SG10201505311P A SG 10201505311PA SG 10201505311P A SG10201505311P A SG 10201505311PA SG 10201505311P A SG10201505311P A SG 10201505311PA SG 10201505311P A SG10201505311P A SG 10201505311PA
- Authority
- SG
- Singapore
- Prior art keywords
- movable
- gas curtain
- microchamber system
- microchamber
- curtain
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Laser Beam Processing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/690,132 US9029809B2 (en) | 2012-11-30 | 2012-11-30 | Movable microchamber system with gas curtain |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201505311PA true SG10201505311PA (en) | 2015-08-28 |
Family
ID=50824428
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2013076443A SG2013076443A (en) | 2012-11-30 | 2013-10-11 | Movable microchamber system with gas curtain |
SG10201505311PA SG10201505311PA (en) | 2012-11-30 | 2013-10-11 | Movable microchamber system with gas curtain |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2013076443A SG2013076443A (en) | 2012-11-30 | 2013-10-11 | Movable microchamber system with gas curtain |
Country Status (5)
Country | Link |
---|---|
US (1) | US9029809B2 (de) |
JP (1) | JP5964800B2 (de) |
KR (1) | KR102176801B1 (de) |
SG (2) | SG2013076443A (de) |
TW (1) | TWI509697B (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6185512B2 (ja) * | 2014-06-24 | 2017-08-23 | ウルトラテック インク | 周囲酸素ガスの局在化制御を用いた半導体ウエハのレーザアニーリング方法 |
US9613828B2 (en) * | 2014-06-24 | 2017-04-04 | Ultratech, Inc. | Method of laser annealing a semiconductor wafer with localized control of ambient oxygen |
KR20160144307A (ko) * | 2015-06-08 | 2016-12-16 | 울트라테크 인크. | 국소 처리가스 분위기를 이용한 마이크로챔버 레이저 처리 시스템 및 방법 |
US20160354865A1 (en) | 2015-06-08 | 2016-12-08 | Ultratech, Inc. | Microchamber laser processing systems and methods using localized process-gas atmosphere |
CN107398634A (zh) * | 2016-05-19 | 2017-11-28 | 上海新昇半导体科技有限公司 | 一种激光退火装置及激光退火方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4444812A (en) | 1980-07-28 | 1984-04-24 | Monsanto Company | Combination gas curtains for continuous chemical vapor deposition production of silicon bodies |
US4435445A (en) | 1982-05-13 | 1984-03-06 | Energy Conversion Devices, Inc. | Photo-assisted CVD |
US4801352A (en) | 1986-12-30 | 1989-01-31 | Image Micro Systems, Inc. | Flowing gas seal enclosure for processing workpiece surface with controlled gas environment and intense laser irradiation |
JPH02142696A (ja) * | 1988-11-22 | 1990-05-31 | Mitsubishi Heavy Ind Ltd | レーザー加工機集塵装置 |
JPH02143517A (ja) * | 1988-11-25 | 1990-06-01 | Fujitsu Ltd | 半導体装置の製造方法 |
US5997588A (en) | 1995-10-13 | 1999-12-07 | Advanced Semiconductor Materials America, Inc. | Semiconductor processing system with gas curtain |
US5891251A (en) | 1996-08-07 | 1999-04-06 | Macleish; Joseph H. | CVD reactor having heated process chamber within isolation chamber |
JPH10172919A (ja) * | 1996-12-11 | 1998-06-26 | Sony Corp | レーザーアニール方法及び装置 |
JP3400396B2 (ja) * | 1998-01-13 | 2003-04-28 | 株式会社東芝 | レーザアニール装置およびレーザアニール方法 |
US5997963A (en) * | 1998-05-05 | 1999-12-07 | Ultratech Stepper, Inc. | Microchamber |
US5965048A (en) | 1998-11-20 | 1999-10-12 | General Electric Company | Heated chamber including an open wall with a gas curtain |
US6654095B1 (en) * | 1999-10-18 | 2003-11-25 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
EP1240366B1 (de) | 1999-12-22 | 2003-07-09 | Aixtron AG | Cvd reaktor und prozesskammer dafür |
JP2001358056A (ja) | 2000-06-15 | 2001-12-26 | Canon Inc | 露光装置 |
JP2002075904A (ja) * | 2000-09-04 | 2002-03-15 | Toshiba Corp | レーザアニール装置および多結晶シリコンの製造方法 |
JP4495851B2 (ja) | 2000-11-15 | 2010-07-07 | 積水化学工業株式会社 | 半導体素子の製造装置 |
US6818857B1 (en) * | 2000-11-28 | 2004-11-16 | Heung Ki Cho | Method and apparatus for welding |
JP4845267B2 (ja) * | 2001-01-15 | 2011-12-28 | 東芝モバイルディスプレイ株式会社 | レーザアニール装置およびレーザアニール方法 |
TWI223863B (en) * | 2002-04-22 | 2004-11-11 | Nikon Corp | Support apparatus, optical apparatus, exposure apparatus and manufacturing method of device |
US20040058293A1 (en) * | 2002-08-06 | 2004-03-25 | Tue Nguyen | Assembly line processing system |
JP2005166768A (ja) * | 2003-12-01 | 2005-06-23 | Advanced Display Inc | レーザーアニール装置及び薄膜トランジスタ製造方法 |
US7807947B2 (en) | 2005-05-09 | 2010-10-05 | 3D Systems, Inc. | Laser sintering process chamber gas curtain window cleansing in a laser sintering system |
US7375791B2 (en) | 2005-06-30 | 2008-05-20 | Asml Holding N.V. | Laminar flow gas curtains for lithographic applications |
KR100769475B1 (ko) * | 2005-11-16 | 2007-10-23 | 코닉시스템 주식회사 | 국부적 불활성 기체 분위기에서 결정화시키는 레이저결정화 장치 |
US7867868B2 (en) * | 2007-03-02 | 2011-01-11 | Applied Materials, Inc. | Absorber layer candidates and techniques for application |
JP2009099917A (ja) * | 2007-10-19 | 2009-05-07 | Ulvac Japan Ltd | レーザーアニール装置 |
SG163481A1 (en) * | 2009-01-21 | 2010-08-30 | Semiconductor Energy Lab | Method for manufacturing soi substrate and semiconductor device |
DE102009043848A1 (de) * | 2009-08-25 | 2011-03-03 | Aixtron Ag | CVD-Verfahren und CVD-Reaktor |
WO2011156625A1 (en) | 2010-06-09 | 2011-12-15 | Intevac, Inc. | Full-enclosure, controlled-flow mini-environment for thin film chambers |
JP5408678B2 (ja) * | 2011-11-07 | 2014-02-05 | 株式会社日本製鋼所 | レーザ処理装置 |
-
2012
- 2012-11-30 US US13/690,132 patent/US9029809B2/en active Active
-
2013
- 2013-10-10 JP JP2013212544A patent/JP5964800B2/ja active Active
- 2013-10-11 SG SG2013076443A patent/SG2013076443A/en unknown
- 2013-10-11 SG SG10201505311PA patent/SG10201505311PA/en unknown
- 2013-10-30 KR KR1020130130084A patent/KR102176801B1/ko active IP Right Grant
- 2013-11-27 TW TW102143304A patent/TWI509697B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR20140070364A (ko) | 2014-06-10 |
TWI509697B (zh) | 2015-11-21 |
TW201430956A (zh) | 2014-08-01 |
JP2014110420A (ja) | 2014-06-12 |
JP5964800B2 (ja) | 2016-08-03 |
SG2013076443A (en) | 2014-06-27 |
US20140151344A1 (en) | 2014-06-05 |
KR102176801B1 (ko) | 2020-11-10 |
US9029809B2 (en) | 2015-05-12 |
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