SG10201505311PA - Movable microchamber system with gas curtain - Google Patents

Movable microchamber system with gas curtain

Info

Publication number
SG10201505311PA
SG10201505311PA SG10201505311PA SG10201505311PA SG10201505311PA SG 10201505311P A SG10201505311P A SG 10201505311PA SG 10201505311P A SG10201505311P A SG 10201505311PA SG 10201505311P A SG10201505311P A SG 10201505311PA SG 10201505311P A SG10201505311P A SG 10201505311PA
Authority
SG
Singapore
Prior art keywords
movable
gas curtain
microchamber system
microchamber
curtain
Prior art date
Application number
SG10201505311PA
Other languages
English (en)
Inventor
Pun Digby
Shajii Ali
B Cowe Andrew
Ellis Raymond
T Mcwhirter James
Original Assignee
Ultratech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ultratech Inc filed Critical Ultratech Inc
Publication of SG10201505311PA publication Critical patent/SG10201505311PA/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/127Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864Annealing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00Fluid handling
    • Y10T137/0318Processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG10201505311PA 2012-11-30 2013-10-11 Movable microchamber system with gas curtain SG10201505311PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/690,132 US9029809B2 (en) 2012-11-30 2012-11-30 Movable microchamber system with gas curtain

Publications (1)

Publication Number Publication Date
SG10201505311PA true SG10201505311PA (en) 2015-08-28

Family

ID=50824428

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2013076443A SG2013076443A (en) 2012-11-30 2013-10-11 Movable microchamber system with gas curtain
SG10201505311PA SG10201505311PA (en) 2012-11-30 2013-10-11 Movable microchamber system with gas curtain

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG2013076443A SG2013076443A (en) 2012-11-30 2013-10-11 Movable microchamber system with gas curtain

Country Status (5)

Country Link
US (1) US9029809B2 (de)
JP (1) JP5964800B2 (de)
KR (1) KR102176801B1 (de)
SG (2) SG2013076443A (de)
TW (1) TWI509697B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6185512B2 (ja) * 2014-06-24 2017-08-23 ウルトラテック インク 周囲酸素ガスの局在化制御を用いた半導体ウエハのレーザアニーリング方法
US9613828B2 (en) * 2014-06-24 2017-04-04 Ultratech, Inc. Method of laser annealing a semiconductor wafer with localized control of ambient oxygen
KR20160144307A (ko) * 2015-06-08 2016-12-16 울트라테크 인크. 국소 처리가스 분위기를 이용한 마이크로챔버 레이저 처리 시스템 및 방법
US20160354865A1 (en) 2015-06-08 2016-12-08 Ultratech, Inc. Microchamber laser processing systems and methods using localized process-gas atmosphere
CN107398634A (zh) * 2016-05-19 2017-11-28 上海新昇半导体科技有限公司 一种激光退火装置及激光退火方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
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US4444812A (en) 1980-07-28 1984-04-24 Monsanto Company Combination gas curtains for continuous chemical vapor deposition production of silicon bodies
US4435445A (en) 1982-05-13 1984-03-06 Energy Conversion Devices, Inc. Photo-assisted CVD
US4801352A (en) 1986-12-30 1989-01-31 Image Micro Systems, Inc. Flowing gas seal enclosure for processing workpiece surface with controlled gas environment and intense laser irradiation
JPH02142696A (ja) * 1988-11-22 1990-05-31 Mitsubishi Heavy Ind Ltd レーザー加工機集塵装置
JPH02143517A (ja) * 1988-11-25 1990-06-01 Fujitsu Ltd 半導体装置の製造方法
US5997588A (en) 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
US5891251A (en) 1996-08-07 1999-04-06 Macleish; Joseph H. CVD reactor having heated process chamber within isolation chamber
JPH10172919A (ja) * 1996-12-11 1998-06-26 Sony Corp レーザーアニール方法及び装置
JP3400396B2 (ja) * 1998-01-13 2003-04-28 株式会社東芝 レーザアニール装置およびレーザアニール方法
US5997963A (en) * 1998-05-05 1999-12-07 Ultratech Stepper, Inc. Microchamber
US5965048A (en) 1998-11-20 1999-10-12 General Electric Company Heated chamber including an open wall with a gas curtain
US6654095B1 (en) * 1999-10-18 2003-11-25 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
EP1240366B1 (de) 1999-12-22 2003-07-09 Aixtron AG Cvd reaktor und prozesskammer dafür
JP2001358056A (ja) 2000-06-15 2001-12-26 Canon Inc 露光装置
JP2002075904A (ja) * 2000-09-04 2002-03-15 Toshiba Corp レーザアニール装置および多結晶シリコンの製造方法
JP4495851B2 (ja) 2000-11-15 2010-07-07 積水化学工業株式会社 半導体素子の製造装置
US6818857B1 (en) * 2000-11-28 2004-11-16 Heung Ki Cho Method and apparatus for welding
JP4845267B2 (ja) * 2001-01-15 2011-12-28 東芝モバイルディスプレイ株式会社 レーザアニール装置およびレーザアニール方法
TWI223863B (en) * 2002-04-22 2004-11-11 Nikon Corp Support apparatus, optical apparatus, exposure apparatus and manufacturing method of device
US20040058293A1 (en) * 2002-08-06 2004-03-25 Tue Nguyen Assembly line processing system
JP2005166768A (ja) * 2003-12-01 2005-06-23 Advanced Display Inc レーザーアニール装置及び薄膜トランジスタ製造方法
US7807947B2 (en) 2005-05-09 2010-10-05 3D Systems, Inc. Laser sintering process chamber gas curtain window cleansing in a laser sintering system
US7375791B2 (en) 2005-06-30 2008-05-20 Asml Holding N.V. Laminar flow gas curtains for lithographic applications
KR100769475B1 (ko) * 2005-11-16 2007-10-23 코닉시스템 주식회사 국부적 불활성 기체 분위기에서 결정화시키는 레이저결정화 장치
US7867868B2 (en) * 2007-03-02 2011-01-11 Applied Materials, Inc. Absorber layer candidates and techniques for application
JP2009099917A (ja) * 2007-10-19 2009-05-07 Ulvac Japan Ltd レーザーアニール装置
SG163481A1 (en) * 2009-01-21 2010-08-30 Semiconductor Energy Lab Method for manufacturing soi substrate and semiconductor device
DE102009043848A1 (de) * 2009-08-25 2011-03-03 Aixtron Ag CVD-Verfahren und CVD-Reaktor
WO2011156625A1 (en) 2010-06-09 2011-12-15 Intevac, Inc. Full-enclosure, controlled-flow mini-environment for thin film chambers
JP5408678B2 (ja) * 2011-11-07 2014-02-05 株式会社日本製鋼所 レーザ処理装置

Also Published As

Publication number Publication date
KR20140070364A (ko) 2014-06-10
TWI509697B (zh) 2015-11-21
TW201430956A (zh) 2014-08-01
JP2014110420A (ja) 2014-06-12
JP5964800B2 (ja) 2016-08-03
SG2013076443A (en) 2014-06-27
US20140151344A1 (en) 2014-06-05
KR102176801B1 (ko) 2020-11-10
US9029809B2 (en) 2015-05-12

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