SG10201505311PA - Movable microchamber system with gas curtain - Google Patents
Movable microchamber system with gas curtainInfo
- Publication number
- SG10201505311PA SG10201505311PA SG10201505311PA SG10201505311PA SG10201505311PA SG 10201505311P A SG10201505311P A SG 10201505311PA SG 10201505311P A SG10201505311P A SG 10201505311PA SG 10201505311P A SG10201505311P A SG 10201505311PA SG 10201505311P A SG10201505311P A SG 10201505311PA
- Authority
- SG
- Singapore
- Prior art keywords
- movable
- gas curtain
- microchamber system
- microchamber
- curtain
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Laser Beam Processing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/690,132 US9029809B2 (en) | 2012-11-30 | 2012-11-30 | Movable microchamber system with gas curtain |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201505311PA true SG10201505311PA (en) | 2015-08-28 |
Family
ID=50824428
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201505311PA SG10201505311PA (en) | 2012-11-30 | 2013-10-11 | Movable microchamber system with gas curtain |
SG2013076443A SG2013076443A (en) | 2012-11-30 | 2013-10-11 | Movable microchamber system with gas curtain |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2013076443A SG2013076443A (en) | 2012-11-30 | 2013-10-11 | Movable microchamber system with gas curtain |
Country Status (5)
Country | Link |
---|---|
US (1) | US9029809B2 (en) |
JP (1) | JP5964800B2 (en) |
KR (1) | KR102176801B1 (en) |
SG (2) | SG10201505311PA (en) |
TW (1) | TWI509697B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6185512B2 (en) * | 2014-06-24 | 2017-08-23 | ウルトラテック インク | Laser annealing method of semiconductor wafer using localization control of ambient oxygen gas |
US9613828B2 (en) * | 2014-06-24 | 2017-04-04 | Ultratech, Inc. | Method of laser annealing a semiconductor wafer with localized control of ambient oxygen |
KR20160144307A (en) * | 2015-06-08 | 2016-12-16 | 울트라테크 인크. | Microchamber Laser Processing Systems and Methods Using Localized Process-Gas Atmosphere |
US20160354865A1 (en) | 2015-06-08 | 2016-12-08 | Ultratech, Inc. | Microchamber laser processing systems and methods using localized process-gas atmosphere |
CN107398634A (en) * | 2016-05-19 | 2017-11-28 | 上海新昇半导体科技有限公司 | A kind of laser anneal device and laser anneal method |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4444812A (en) | 1980-07-28 | 1984-04-24 | Monsanto Company | Combination gas curtains for continuous chemical vapor deposition production of silicon bodies |
US4435445A (en) | 1982-05-13 | 1984-03-06 | Energy Conversion Devices, Inc. | Photo-assisted CVD |
US4801352A (en) | 1986-12-30 | 1989-01-31 | Image Micro Systems, Inc. | Flowing gas seal enclosure for processing workpiece surface with controlled gas environment and intense laser irradiation |
JPH02142696A (en) * | 1988-11-22 | 1990-05-31 | Mitsubishi Heavy Ind Ltd | Dust collector for laser beam machine |
JPH02143517A (en) * | 1988-11-25 | 1990-06-01 | Fujitsu Ltd | Manufacture of semiconductor device |
US5997588A (en) | 1995-10-13 | 1999-12-07 | Advanced Semiconductor Materials America, Inc. | Semiconductor processing system with gas curtain |
US5891251A (en) | 1996-08-07 | 1999-04-06 | Macleish; Joseph H. | CVD reactor having heated process chamber within isolation chamber |
JPH10172919A (en) * | 1996-12-11 | 1998-06-26 | Sony Corp | Laser annealing method and apparatus |
JP3400396B2 (en) * | 1998-01-13 | 2003-04-28 | 株式会社東芝 | Laser annealing apparatus and laser annealing method |
US5997963A (en) | 1998-05-05 | 1999-12-07 | Ultratech Stepper, Inc. | Microchamber |
US5965048A (en) | 1998-11-20 | 1999-10-12 | General Electric Company | Heated chamber including an open wall with a gas curtain |
US6654095B1 (en) * | 1999-10-18 | 2003-11-25 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
ATE244780T1 (en) | 1999-12-22 | 2003-07-15 | Aixtron Ag | CVD REACTOR AND PROCESS CHAMBER THEREOF |
JP2001358056A (en) | 2000-06-15 | 2001-12-26 | Canon Inc | Exposure apparatus |
JP2002075904A (en) * | 2000-09-04 | 2002-03-15 | Toshiba Corp | Laser annealer and method of manufacturing polycrystalline silicon |
JP4495851B2 (en) | 2000-11-15 | 2010-07-07 | 積水化学工業株式会社 | Semiconductor device manufacturing equipment |
US6818857B1 (en) * | 2000-11-28 | 2004-11-16 | Heung Ki Cho | Method and apparatus for welding |
JP4845267B2 (en) * | 2001-01-15 | 2011-12-28 | 東芝モバイルディスプレイ株式会社 | Laser annealing apparatus and laser annealing method |
TWI223863B (en) * | 2002-04-22 | 2004-11-11 | Nikon Corp | Support apparatus, optical apparatus, exposure apparatus and manufacturing method of device |
US20040058293A1 (en) * | 2002-08-06 | 2004-03-25 | Tue Nguyen | Assembly line processing system |
JP2005166768A (en) * | 2003-12-01 | 2005-06-23 | Advanced Display Inc | Laser annealing device and method of manufacturing thin film transistor |
US7807947B2 (en) | 2005-05-09 | 2010-10-05 | 3D Systems, Inc. | Laser sintering process chamber gas curtain window cleansing in a laser sintering system |
US7375791B2 (en) | 2005-06-30 | 2008-05-20 | Asml Holding N.V. | Laminar flow gas curtains for lithographic applications |
KR100769475B1 (en) * | 2005-11-16 | 2007-10-23 | 코닉시스템 주식회사 | Method and apparatus for crystallization in locally induced inert gas ambient |
US7867868B2 (en) * | 2007-03-02 | 2011-01-11 | Applied Materials, Inc. | Absorber layer candidates and techniques for application |
JP2009099917A (en) * | 2007-10-19 | 2009-05-07 | Ulvac Japan Ltd | Laser annealing apparatus |
SG178765A1 (en) * | 2009-01-21 | 2012-03-29 | Semiconductor Energy Lab | Method for manufacturing soi substrate and semiconductor device |
DE102009043848A1 (en) * | 2009-08-25 | 2011-03-03 | Aixtron Ag | CVD method and CVD reactor |
US20110303148A1 (en) | 2010-06-09 | 2011-12-15 | Jun Xie | Full-enclosure, controlled-flow mini-environment for thin film chambers |
JP5408678B2 (en) * | 2011-11-07 | 2014-02-05 | 株式会社日本製鋼所 | Laser processing equipment |
-
2012
- 2012-11-30 US US13/690,132 patent/US9029809B2/en active Active
-
2013
- 2013-10-10 JP JP2013212544A patent/JP5964800B2/en active Active
- 2013-10-11 SG SG10201505311PA patent/SG10201505311PA/en unknown
- 2013-10-11 SG SG2013076443A patent/SG2013076443A/en unknown
- 2013-10-30 KR KR1020130130084A patent/KR102176801B1/en active IP Right Grant
- 2013-11-27 TW TW102143304A patent/TWI509697B/en active
Also Published As
Publication number | Publication date |
---|---|
JP2014110420A (en) | 2014-06-12 |
KR102176801B1 (en) | 2020-11-10 |
US9029809B2 (en) | 2015-05-12 |
JP5964800B2 (en) | 2016-08-03 |
KR20140070364A (en) | 2014-06-10 |
TWI509697B (en) | 2015-11-21 |
US20140151344A1 (en) | 2014-06-05 |
SG2013076443A (en) | 2014-06-27 |
TW201430956A (en) | 2014-08-01 |
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