JP2002075904A - Laser annealer and method of manufacturing polycrystalline silicon - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device and method by which a polycrystalline silicon semiconductor used for the pixel switch or driving circuit of a liquid crystal display device can be mass-produced with a high yield. SOLUTION: In the course of laser annealing, a thin amorphous silicon film is crystallized to a thin polycrystalline silicon film by irradiating the silicon film with a laser beam while the silicon film is moved. The occurrence of undesired particles from the silicon film is suppressed before annealing the silicon film by generating a gas flow from a sealed box 41 which is positioned to a working position where the silicon film is irradiated with the leaser beam or its vicinity, is filled up with one or more kinds of gases, and has an opening which enables the laser beam to be emitted so that the gas may flow outward from the box 41 and, at the same time, in the advancing direction of a table which moves the amorphous silicon film in a prescribed direction from the rear side in the advancing direction at the time of annealing the thin amorphous silicon film.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an excimer laser annealing apparatus, and more particularly to a processing apparatus and a processing method for irradiating an amorphous silicon semiconductor thin film with an excimer laser to anneal the polycrystalline silicon.

[0002]

2. Description of the Related Art At present, a liquid crystal display (LC) using an insulated gate thin film transistor (TFT) made of amorphous silicon (a-Si) as a switching element.
D) is widely used.

However, in order to realize a high-definition display with high definition and high-speed operation, an electric field mobility (μ) is required.
In the case of an a-Si TFT having a low FE) of 1 cm ² / Vs or less, the capability is insufficient.

On the other hand, the laser annealing method
When a TFT is formed using polycrystalline silicon which is polycrystallized by irradiating an a-Si with an excimer laser beam, μF
E of about 100 to 200 cm ² / Vs can be obtained, and it can be expected that the display has high functions, such as high definition, high-speed operation, and a drive circuit can be integrally formed.

The laser annealing apparatus irradiates a laser beam shaped into, for example, 250 mm × 0.4 mm with a beam homogenizer to a thin film of amorphous silicon with a laser beam having a pulse period of, for example, 300 Hz and a 95% overlap. An XY table for transporting a glass substrate on which an amorphous silicon thin film is formed in a predetermined direction, a laser device for emitting a laser beam of a predetermined wavelength, and a laser beam irradiating the amorphous silicon thin film on the glass substrate And a seal box for sealing the processed part from the outside air. In the seal box, the temperature of the amorphous silicon thin film, which is heated by the irradiation of the laser beam, is suppressed from abnormally rising and ablation is caused.
One or more inert gases are filled to prevent the formation of undesired oxides with the surrounding air when the molten amorphous silicon becomes polycrystalline (a predetermined amount of gas is used). Constantly flowing).

[0006]

As described above, in a laser annealing apparatus, an inert gas flows at a flow rate of, for example, 30 L (liter) / min in a seal box. It has been confirmed that particles and the like generated when a laser beam is irradiated to the amorphous silicon thin film by the inert gas are conveyed and adhere to the amorphous silicon surface before the laser beam is irradiated (annealed). .

If particles or the like adhere to the surface of the amorphous silicon before annealing, the crystallized polycrystalline silicon may have a particle size defect that deviates from a predetermined particle size range, or may have a non-uniform particle size within the same substrate. There is a problem in that when the liquid crystal display panel is assembled, a display defect occurs or display quality is deteriorated due to a variation in particle diameter.

It is an object of the present invention to provide a laser annealing apparatus capable of suppressing particles generated during laser annealing from adhering to an amorphous silicon thin film before annealing and deteriorating characteristics of polycrystalline silicon after annealing. It is in.

[0009]

SUMMARY OF THE INVENTION The present invention has been made on the basis of the above-mentioned problems, and irradiates the amorphous silicon thin film with a laser beam while moving the amorphous silicon thin film. In a laser annealing apparatus using silicon, at or near a processing point where the amorphous silicon thin film is irradiated with the laser beam, an opening portion that is filled with at least one kind of gas and enables irradiation with the laser beam is provided. A gas generating mechanism for generating an airflow from the inside of the provided seal box to the outside of the seal box and from the back of the table moving in the predetermined direction in the table moving direction in the table moving direction. A feature of the present invention is to provide a laser annealing apparatus having a feature.

Further, the present invention provides a method of irradiating a laser beam while moving an amorphous silicon thin film.
In a laser annealing apparatus using the amorphous silicon thin film as polycrystalline silicon, the amorphous silicon thin film is moved in a predetermined direction to or near a processing point where the laser beam is irradiated on the amorphous silicon thin film. A laser annealing apparatus characterized in that a gas generating mechanism for generating an airflow from the rear of the table in the table traveling direction to the table traveling direction is provided.

Further, the present invention provides a laser annealing apparatus in which the amorphous silicon thin film is made of polycrystalline silicon by irradiating a laser beam while moving the amorphous silicon thin film. A first gas generation mechanism for generating an airflow from the rear of the table moving in the predetermined direction to the table moving the amorphous silicon thin film in a predetermined direction from the table moving direction to the table moving direction at or near the processing point irradiated with the laser beam; At or near the processing point is filled with one or more gases,
A second gas generating mechanism that generates an airflow from the inside of the seal box having an opening capable of irradiating the laser beam to the outside of the seal box and from the rear of the table in the table traveling direction to the table traveling direction. A laser annealing apparatus characterized by having:

Still further, the present invention provides a laser annealing apparatus in which the amorphous silicon thin film is made of polycrystalline silicon by irradiating a laser beam while moving the amorphous silicon thin film. A gas suction structure for sucking the amorphous silicon thin film from a direction other than the table moving direction rearward of the table for moving the amorphous silicon thin film in a predetermined direction at or near a processing point irradiated with the laser beam. This is a laser annealing device.

Still further, the present invention provides a laser annealing apparatus in which the amorphous silicon thin film is made of polycrystalline silicon by irradiating a laser beam while moving the amorphous silicon thin film. A first gas generating mechanism for generating an airflow at or near a processing point where the laser beam is irradiated from the rear of the table moving the amorphous silicon thin film in a predetermined direction in the table moving direction. And the processing point or its vicinity is filled with one or more types of gas,
A second gas generating mechanism for generating an airflow from the inside of the seal box having an opening capable of irradiating the laser beam to the outside of the seal box and from the rear of the table in the table traveling direction to the table traveling direction; A gas suction structure for sucking from a direction other than the rear of the table in the processing point at or near the processing point.

Still further, the present invention provides a laser annealing apparatus in which the amorphous silicon thin film is made of polycrystalline silicon by irradiating a laser beam while moving the amorphous silicon thin film. A gas generating mechanism that generates an airflow from the rear of the table moving in the predetermined direction in the table moving direction to the table moving direction, at or near the processing point where the laser beam is irradiated, A gas suction structure for sucking from a direction other than the rear of the table in the processing point at or near the processing point.

Further, the present invention relates to a laser annealing apparatus in which the amorphous silicon thin film is made of polycrystalline silicon by irradiating a laser beam while moving the amorphous silicon thin film. At or near the processing point where the laser beam is irradiated, filled with one or more types of gas, and from the inside of the seal box having an opening that allows the irradiation of the laser beam to the outside of the seal box, A gas generating mechanism for generating an airflow from the rear of the table traveling direction of the table moving the amorphous silicon thin film in a predetermined direction toward the table traveling direction, and at or near the processing point,
A gas suction structure for sucking from a direction other than the rear of the table in the direction of travel of the table.

Still further, according to the present invention, there is provided a method for producing polycrystalline silicon in which an amorphous silicon thin film is irradiated with a laser beam while moving the amorphous silicon thin film, wherein the amorphous silicon thin film is made of polycrystalline silicon. Is carried out in a state where an airflow is generated in the direction of travel of the amorphous silicon in the vicinity of a processing point where the laser beam is applied to the amorphous silicon. It is.

[0017]

Embodiments of the present invention will be described below in detail with reference to the drawings.

Example 1 FIG. 1 is a schematic diagram illustrating a XeCl excimer laser annealing apparatus according to the present invention.

As shown in FIG. 1, an excimer laser annealing apparatus 1 includes a laser system 2 for irradiating a pulsed laser beam having a predetermined wavelength and intensity to a predetermined cross-sectional area toward a glass substrate to be annealed. The substrate transfer system 3 which is movable in a predetermined direction while holding the glass substrate O at a convergence position where the pulse laser beam from the laser system 2 converges is provided in the vicinity of the emission position of the pulse laser beam of the laser system 2. In addition to preventing abnormal temperature rise of the amorphous silicon thin film during annealing, ablation is suppressed, and undesired oxides are generated with surrounding air when the molten amorphous silicon becomes polycrystalline. The intensity of the pulsed laser beam output from the gas circulation system 4 and the laser system 2 for suppressing And a control system 5 for controlling the transport of the substrate.

The laser system 2 includes a laser oscillator 21 for outputting a pulse laser beam having a predetermined wavelength and intensity, and a variable attenuator 2 for adjusting the energy of the pulse laser beam output from the laser oscillator 21 to a predetermined value.
2. A beam shaping optical system 23 and a beam shaping optical system 23 that give a pulse laser beam adjusted to a predetermined energy by the variable attenuator 22 a predetermined sectional beam shape corresponding to the size of the glass substrate O to be annealed.
A 45 ° total reflection mirror 24 for bending a pulse laser beam having a predetermined sectional beam shape by 90 °, and a converging lens 2 for giving a predetermined convergence to the pulse laser beam bent by the 45 ° total reflection mirror 24
5 is included.

The substrate transport system 3 can move in a predetermined direction while holding the glass substrate O at a convergence position where a pulse laser beam having a predetermined convergence is converged via the converging lens 25 of the laser system 2. An XY table 31 and an interface (not shown) for exchanging signals with the control system 5 described below. X-
The Y table 31 is independently movable in two axis directions, that is, an X axis direction and a Y axis direction orthogonal to each other on the same plane.
It is formed to be rotatable in the same plane with the rotation center as a rotation axis.

The gas circulation system 4 covers a region where the glass substrate O set at a predetermined position on the XY table 31 is moved by the XY table 31, and is provided with convergence by the converging lens 25. It has an aperture through which the pulsed laser beam can pass, and suppresses abnormal temperature rise of the amorphous silicon thin film, which is heated by irradiation with the pulsed laser beam, resulting in ablation. Filled with one or more inert gases to prevent the formation of undesired oxides with surrounding air when forming polycrystals (a predetermined amount of gas is constantly flowing) A) a seal box 41 and a gas supply line 42 for supplying any kind of inert gas into the seal box 41; And an exhaust line 43 for exhausting the particles or the like generated from the thin film of amorphous silicon of the glass substrate O by gas and annealing the supplied inert in the scan 41.

The control system 5 is located behind the total reflection mirror 24,
When the pulse laser beam shaped into a predetermined cross-sectional beam shape by the beam shaping optical system 23 is reflected by the total reflection mirror 24, a light beam that leaks slightly (hereinafter, referred to as a leak beam) is collected. A biplanar photoelectric tube 27 for detecting the leaked beam converged by the lens 26 and performing photoelectric conversion to observe the waveform of the pulsed laser beam, a digital oscilloscope 28 for displaying the output of the biplanar photoelectric tube 27 so that an observer can see it, and a biplanar photoelectric tube 27
To analyze the waveform of the pulsed laser beam, perform predetermined calculations, output of the laser device 11 and XY
A personal computer 29 for controlling the operation of the table 31 is included.

FIG. 2 is a schematic diagram for explaining the gas circulation system and the periphery of the XY table of the laser annealing apparatus described above with reference to FIG.

As shown in FIG. 2, the same gas as the inert gas filled in the seal box 41 or an arbitrary inert gas is filled in the seal box 41 of the gas circulation system 4 in XY. A gas generator 44 that blows at a predetermined flow rate toward a thin layer of amorphous silicon on the glass substrate O set on the table 31 is incorporated. Incidentally, the seal box 41, at a flow rate of 30L (liter) / min (minute), the _{N 2} 98% and _{O 2} of 2
% Mixed gas is filled.

The seal box 41 includes a gas generator 4
Opening 41a that allows the inert gas from 4 to reach the amorphous silicon thin film on glass substrate O
Is provided, and an inert gas is blown onto predetermined positions of the thin layer of amorphous silicon. The opening 41 a is provided with a predetermined convergence by the converging lens 25, that is, a position where the amorphous silicon thin film of the substrate O carried along with the movement of the XY table 31 is laser-annealed by the pulsed laser beam. It is provided at a processing position where the pulsed laser beam is irradiated on the amorphous silicon thin film and at a position including the vicinity thereof.

The direction in which the inert gas is blown from the gas generator 44 onto the amorphous silicon thin film on the glass substrate O is the same as the direction in which the glass substrate O is transported along with the movement of the XY table 31. In the case where the amorphous silicon thin film (glass substrate O) is laser-annealed from an end in an arbitrary direction, the thin film is directed to the side on which polycrystalline silicon has already been annealed when viewed from the processing position. That is, the inert gas is blown from the gas generator 44 to the processing position (laser annealing position) of the amorphous silicon from the rear in the traveling direction with respect to the traveling direction in which the XY table 31 is moved. Can be An example of the inert gas blown from the gas generator 44 toward the amorphous silicon thin film is, for example, a gas in which 98% of N ₂ and ₂ % of O ₂ are mixed, and the spray amount (flow rate) is , For example, 6 L / m
In, the blowing speed (flow rate) is, for example, 0.1 m / s. In addition, the length of the gas generator 44 (spray width)
Is set to, for example, 260 mm.

In the laser annealing apparatus 1 having such a gas generator 44, a wavelength 308 is applied to a 50 nm-thick amorphous silicon thin film deposited on a glass substrate O.
An XeCl excimer pulse laser beam having a frequency of 300 nm and a frequency of 300 Hz is applied to the XY table 31 at 6 mm / s (second).
When the polycrystalline silicon was formed by moving at a speed of 95% and irradiating with an overlap of 95% per pulse,
The occurrence of particle size defects in which the particle size deviates from the predetermined particle size range and the particle size variation in which the particle size becomes non-uniform within the same substrate are reduced.

As described above, the XY table 3 is located at or near the processing point (laser annealing position) where the pulsed laser beam is irradiated to the amorphous silicon thin film.
By blowing an inert gas at a predetermined flow rate from the rear in the traveling direction at a predetermined flow rate, even if undesired particles generated when the amorphous silicon thin film of the glass substrate O is annealed, the laser is generated. Particles can be prevented from adhering to a thin layer of amorphous silicon before annealing, thereby suppressing deterioration of characteristics of polycrystalline silicon after annealing.

Example 2 FIG. 3 is a schematic diagram illustrating another embodiment of the gas circulation system described above with reference to FIG.

As shown in FIG. 3, behind one end of the XY table 31 in the traveling direction in which the XY table 31 is moved, the XY table 31 is moved in the traveling direction. Further, a gas generator 65 for blowing an inert gas at a predetermined flow rate is incorporated. The inert gas from the gas generator 65 is, for example, a gas in which 98% of N ₂ and ₂ % of O ₂ are mixed, and the spray amount (flow rate)
Is, for example, 6 L / min, and the blowing speed (flow rate) is
For example, it is 0.1 m / s. The length (spray width) of the gas generator 65 is set to, for example, 260 mm.

In the laser annealing apparatus 1 having such a gas generating device 65, a 50 nm-thick amorphous silicon thin film deposited on a glass substrate
When a XeCl excimer pulsed laser beam having a frequency of 300 nm and a frequency of 300 Hz is moved at a speed of 6 mm / s on the XY table 31 and overlapped by 95% per pulse, irradiation is performed to form polycrystalline silicon. The occurrence of defective diameter and variation in particle diameter was reduced.

As described above, the XY table 3 is located at or near the processing point (laser annealing position) where the pulsed laser beam is irradiated to the amorphous silicon thin film.
By blowing an inert gas at a predetermined flow rate from the rear in the traveling direction at a predetermined flow rate, even if undesired particles generated when the amorphous silicon thin film of the glass substrate O is annealed, the laser is generated. Particles can be prevented from adhering to a thin layer of amorphous silicon before annealing, thereby suppressing deterioration of characteristics of polycrystalline silicon after annealing.

[Example 3] FIG. 4 is a schematic diagram illustrating another embodiment of the gas circulation system described above with reference to FIGS. 4, 2 and 3.

As shown in FIG. 4, the gas circulation system 4
XY table 31 at one end of Y table 31
Has a gas suction mechanism 75 for sucking along a surface of the amorphous silicon thin film on the glass substrate O from any direction except for the rearward of the traveling direction in which the traveling direction is moved, for example, from the head of the traveling direction. ing.

The gas suction mechanism 75 is connected to, for example, a vacuum pump (not shown), has a suction capacity of, for example, 6 L / min, and sucks particles that may be generated at a processing point.

With the laser annealing apparatus 1 having such a gas suction device 76, a 50 nm-thick amorphous silicon thin film deposited on the glass substrate O
When a XeCl excimer pulsed laser beam having a frequency of 300 nm and a frequency of 300 Hz is moved at a speed of 6 mm / s on the XY table 31 and overlapped by 95% per pulse, irradiation is performed to form polycrystalline silicon. The occurrence of defective diameter and variation in particle diameter was reduced.

As described above, from the processing point (laser annealing position) where the pulse laser beam is irradiated to the amorphous silicon thin film or in the vicinity thereof, from any direction except for the rearward direction of the XY table 31 in the advancing direction, At a predetermined flow rate, by suctioning the inert gas and particles or the like that may be generated at the processing point from the seal block 41,
Particles can be prevented from adhering to the thin layer of amorphous silicon before laser annealing, thereby suppressing deterioration of characteristics of polycrystalline silicon after annealing.

Example 4 FIG. 5 shows an example of a liquid crystal display device including a TFT using a glass substrate having a polycrystalline silicon thin film formed by using the laser annealing apparatus shown in FIG. Next, a brief description will be given of a manufacturing process of the liquid crystal display device 101 shown in FIG.

First, the manufacturing process of the color filter substrate 130 will be described.

On a transparent substrate, ie, a glass substrate 131,
An undercoat layer 132 made of SiNx and SiOx is formed by a plasma CVD method. The glass substrate 131
Is 400 mm x 500 mm and has a thickness of 0.7
mm.

Then, continuously, the undercoat layer 132
Amorphous silicon (a-Si) layer (133) on top
Is deposited to a thickness of, for example, 50 nm by a plasma CVD method.

Subsequently, at a temperature of 500.degree.
The heat treatment is performed in an environment for one minute to reduce the hydrogen concentration in the a-Si film (133).

The XeCl already described with reference to FIG.
Using a laser annealing apparatus, X from the laser oscillator 11
eCl excimer pulse laser with emission wavelength of 308n
m, pulse period 300 Hz, a on glass substrate 131
Fluence of the beam shape of the pulse laser beam irradiated on the -Si film (133) is on the 250 mm × 0.4 mm and the glass substrate 131 is set to be 350 mJ / cm ^2, was placed a glass substrate O X- The Y-table 31 is moved by the pulse laser beam at a speed of 6 mm / s, and the a-Si film (133) is annealed to obtain the polycrystalline silicon (p-Si) film 133.

At this time, the pulse laser beam is changed to a-Si by blowing or sucking any of the gases shown in [Example 1] or [Example 2] or [Example 3], or any or all of them. Membrane (133)
Even if particles are generated at and near the processing point irradiated with the inert gas, an inert gas is blown or sucked at the processing point so that the particles do not adhere to the region of the amorphous silicon before annealing.

As a result, the polycrystalline silicon 133 having a high electron mobility and a substantially uniform particle size can be uniformly formed over the entire surface of the glass substrate 131. The alignment can be performed on the entire surface of the substrate 131.

Hereinafter, after patterning the polycrystalline silicon layer 133 into a predetermined shape, a gate insulating film 134 is deposited by a CVD method, and then a Mo film or Mo-W having a thickness of about 0.3 μm is formed by a sputtering method. A gate electrode 135 and a scanning line are formed by depositing and patterning a film. Next, a photoresist (not shown) is appropriately formed on the gate electrode 135 and the gate insulating film 134, and after patterning is performed as a mask, a predetermined dose is applied to a region of the polycrystalline silicon layer 133 which is to be a p semiconductor portion. Then, a group III element is implanted, and a group V element is similarly implanted at a predetermined dose into a region of the polycrystalline silicon layer 133 which is to be an n semiconductor portion.

Subsequently, after forming and patterning an interlayer insulating film 136 and forming a through hole Ａｌ, Al is deposited and patterned into a predetermined shape to form a signal line, a source electrode 137 and a drain electrode 138. .

Then, a passivation film 139 made of silicon nitride is formed by a plasma CVD method, and holes for through holes are formed.

Next, a predetermined coloring material 140 (R, G, and B) is applied, patterned into a predetermined shape, and baked, so that each of the R, G, and B coloring layers and the through holes 14 are formed.
Form one.

Subsequently, indium-tin oxide (ITO) is deposited by sputtering to a predetermined thickness.
By patterning in a predetermined shape, the pixel electrode 142 is formed.
Is formed. Note that the pixel electrode 142 is connected to the drain electrode 138 via the through hole 141.

Next, an alignment film material made of polyimide is applied to the entire surface of the substrate on the coloring layer 140 (R, G and B).
The alignment process was performed to form the alignment film 143, and the color filter substrate 130 was obtained.

On the transparent substrate 151, ITO was deposited to a thickness of about 100 nm by sputtering to form the counter electrode 1
Next, an alignment film material made of polyimide was applied to the entire surface of the substrate, and an alignment process was performed to form an alignment film 153. Thus, a counter substrate 150 was obtained.

Next, a spacer (not shown) having a predetermined particle size is placed on the alignment film 153 of the counter substrate 150 by 1 m 2.
Spraying was performed at a rate of about 100 per m, and a sealing material (not shown) in which a fiber having a predetermined size was mixed was applied around the outer periphery of the counter substrate 150 except for an injection port for injecting liquid crystal.

Subsequently, the opposing substrate 150 and the color filter substrate 130 are bonded together with a sealing material (not shown) to complete an empty cell.

Next, for example, a nematic liquid crystal material 171 to which a chiral material is added is vacuum-injected into the cell from the injection port, and after the injection, the injection port is sealed using an ultraviolet curing resin as a sealing material (not shown). After that, a liquid crystal display device is completed by disposing polarizing plates on both sides of the cell.

The liquid crystal display device thus manufactured has uniform TFT characteristics and an electron mobility of a-.
Uniform display was displayed over the entire surface of the substrate at a higher speed than that of a liquid crystal display device using Si as a semiconductor layer. As described above, according to the present invention, TFTs exhibiting excellent characteristics can be mass-produced, so that a high-quality liquid crystal display can be manufactured with a very high yield.

[0058]

According to the present invention, a polycrystalline silicon having a uniform grain size over the entire region can be obtained, and a TFT having uniform characteristics can be obtained.
A large-area, high-performance TFT liquid crystal display that can be mass-produced uniformly, with good yield, over the entire surface of the substrate can be provided at low cost.

[Brief description of the drawings]

FIG. 1 is a schematic diagram illustrating an example of an excimer laser annealing apparatus according to the present invention.

FIG. 2 is a schematic diagram illustrating a gas generator incorporated in the excimer laser annealing apparatus shown in FIG.

FIG. 3 is a schematic diagram illustrating another example of the gas generator shown in FIG.

FIG. 4 is a schematic diagram illustrating a gas suction device incorporated in the excimer laser annealing device shown in FIG.

FIG. 5 shows a TFT using a polycrystalline silicon formed as a semiconductor layer by using the excimer laser annealing apparatus shown in FIG.
FIG. 2 is a schematic cross-sectional view illustrating an example of a liquid crystal display device including a liquid crystal display.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Excimer laser annealing apparatus, 2 ... Laser system, 3 ... Substrate conveyance system, 4 ... Gas circulation system, 5 ... Control system, 21 ... Laser oscillator, 22 ... Variable attenuator, 23: beam shaping optical system, 24: 45 ° total reflection mirror, 25: converging lens, 26: focusing lens, 27: biplanar photoelectric tube, 28: digital oscilloscope, 29: analyzer, 31: XY table, 41: seal box, 42: gas supply line, 43: gas exhaust line, 44: gas generator, 65 ...・ Gas generating device, 76 ・ ・ ・ Gas suction device, 101 ・ ・ ・ Liquid crystal display device, 130 ・ ・ ・ Color filter substrate, 131 ・ ・ ・ Glass substrate, 132 ・ ・ ・ Undercoat layer, 133 ・ ・Polycrystalline silicon, 134: gate electrode, 135: gate insulating film, 136: interlayer insulating film, 137: source electrode, 138: drain electrode, 139: passivation film, 140 ..Coloring layer, 141 through hole, 142 pixel electrode, 143 alignment film, 151 glass substrate, 152 counter electrode, 153 alignment film, 171・ Liquid crystal materials.

 ──────────────────────────────────────────────────続 き Continued on front page F term (reference) 5F052 AA02 BA18 BB07 CA02 DA02 DB03 JA01 5F110 AA26 BB01 CC02 DD02 DD13 DD14 DD17 EE04 EE06 EE44 GG02 GG06 GG13 GG25 GG45 HL03 NN02 NN24 NN35 NN72 PP03 PP04

Claims (8)

[Claims] 1. A laser annealing apparatus for irradiating a laser beam while moving an amorphous silicon thin film to convert the amorphous silicon thin film to polycrystalline silicon, wherein the laser beam is applied to the amorphous silicon thin film. At or near the processing point to be irradiated, one or more types of gas are filled, and the inside of the seal box provided with an opening capable of irradiating the laser beam goes out of the seal box and the amorphous silicon. A laser annealing apparatus having a gas generating mechanism for generating an airflow from the rear of a table moving in a predetermined direction in a direction in which the thin film moves in a predetermined direction. 2. A laser annealing apparatus in which the amorphous silicon thin film is irradiated with a laser beam while moving the amorphous silicon thin film, whereby the amorphous silicon thin film is irradiated with the laser beam. At or near the processing point to be irradiated, a gas generating mechanism is provided which generates an airflow from the rear of the table moving in the predetermined direction to the table moving the amorphous silicon thin film in the predetermined direction. Laser annealing equipment. 3. A laser annealing apparatus for irradiating a laser beam while moving an amorphous silicon thin film to make the amorphous silicon thin film polycrystalline silicon, wherein the laser beam is applied to the amorphous silicon thin film. A first gas generating mechanism for generating an airflow from the rear of the table moving in the predetermined direction to the table moving the amorphous silicon thin film in a predetermined direction at or near the processing point to be irradiated; Or in the vicinity thereof, from the inside of the seal box provided with an opening capable of irradiating the laser beam, to the outside of the seal box, and from the rear in the table traveling direction to the table traveling direction. A second gas generating mechanism for generating a heading airflow, the laser annealing apparatus comprising: 4. A laser annealing apparatus for irradiating a laser beam while moving an amorphous silicon thin film to convert the amorphous silicon thin film into polycrystalline silicon, wherein the laser beam is applied to the amorphous silicon thin film. A laser annealing apparatus having a gas suction structure at or near a processing point to be irradiated, for sucking the amorphous silicon thin film from a direction which is not behind the table moving direction of the table moving in a predetermined direction. 5. A laser annealing apparatus for irradiating a laser beam while moving an amorphous silicon thin film to convert the amorphous silicon thin film to polycrystalline silicon, wherein the laser beam is applied to the amorphous silicon thin film. A first gas generating mechanism for generating an airflow from the rear of the table moving in the predetermined direction to the table moving the amorphous silicon thin film in a predetermined direction at or near the processing point to be irradiated; Or in the vicinity thereof, from the inside of the seal box provided with an opening capable of irradiating the laser beam, to the outside of the seal box, and from the rear in the table traveling direction to the table traveling direction. A second gas generating mechanism for generating an airflow directed to the table; The laser annealing apparatus and having a gas suction structure for suctioning the direction is not a direction backwards, the. 6. A laser annealing apparatus for irradiating a laser beam while moving an amorphous silicon thin film to convert the amorphous silicon thin film into polycrystalline silicon, wherein the laser beam is applied to the amorphous silicon thin film. At or near the processing point to be irradiated, a gas generating mechanism for generating an airflow from the rear of the table in the table moving direction to move the amorphous silicon thin film in a predetermined direction in the table moving direction, and the processing point or in the vicinity thereof A gas suction structure for sucking the gas from a direction other than the rear of the table in the direction of travel of the table. 7. A laser annealing apparatus for irradiating a laser beam while moving an amorphous silicon thin film to convert the amorphous silicon thin film to polycrystalline silicon, wherein the laser beam is applied to the amorphous silicon thin film. At or near the processing point to be irradiated, one or more types of gas are filled, and the inside of the seal box provided with an opening capable of irradiating the laser beam goes out of the seal box and the amorphous silicon. A gas generating mechanism for generating an airflow from the rear of the table in the direction of travel of the table moving the thin film in a predetermined direction, and a gas suction for suctioning at or near the processing point from a direction other than the rear of the table in the direction of travel of the table And a laser annealing apparatus having a structure. 8. A method for producing polycrystalline silicon in which a laser beam is irradiated while moving an amorphous silicon thin film, and the amorphous silicon thin film is made of polycrystalline silicon. A method for producing polycrystalline silicon, wherein the method is performed in a state in which an airflow is generated in a direction in which the amorphous silicon travels in the vicinity of a processing point where the laser beam is irradiated to the crystalline silicon.