SE9902395L - Halvledare och tillverkningssätt för halvledare - Google Patents
Halvledare och tillverkningssätt för halvledareInfo
- Publication number
- SE9902395L SE9902395L SE9902395A SE9902395A SE9902395L SE 9902395 L SE9902395 L SE 9902395L SE 9902395 A SE9902395 A SE 9902395A SE 9902395 A SE9902395 A SE 9902395A SE 9902395 L SE9902395 L SE 9902395L
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- semiconductors
- sub
- highly doped
- potential lines
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9902395A SE519975C2 (sv) | 1999-06-23 | 1999-06-23 | Halvledarstruktur för högspänningshalvledarkomponenter |
TW088116507A TW517259B (en) | 1999-06-23 | 1999-09-27 | Semiconductor and manufacturing method for semiconductor |
US09/598,172 US6538294B1 (en) | 1999-06-23 | 2000-06-21 | Trenched semiconductor device with high breakdown voltage |
CNB008089345A CN1190832C (zh) | 1999-06-23 | 2000-06-21 | 半导体结构 |
CA002374203A CA2374203A1 (en) | 1999-06-23 | 2000-06-21 | Semiconductor and manufacturing method for semiconductor |
JP2001505054A JP2003502864A (ja) | 1999-06-23 | 2000-06-21 | 半導体およびその製造方法 |
EP00946620A EP1188185A1 (en) | 1999-06-23 | 2000-06-21 | Semiconductor and manufacturing method for semiconductor |
AU60350/00A AU6035000A (en) | 1999-06-23 | 2000-06-21 | Semiconductor and manufacturing method for semiconductor |
PCT/SE2000/001316 WO2000079584A1 (en) | 1999-06-23 | 2000-06-21 | Semiconductor and manufacturing method for semiconductor |
KR1020017016440A KR100813759B1 (ko) | 1999-06-23 | 2000-06-21 | 반도체 및 반도체 제조 방법 |
HK02109143.5A HK1047655A1 (zh) | 1999-06-23 | 2002-12-17 | 半導體及其製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9902395A SE519975C2 (sv) | 1999-06-23 | 1999-06-23 | Halvledarstruktur för högspänningshalvledarkomponenter |
Publications (3)
Publication Number | Publication Date |
---|---|
SE9902395D0 SE9902395D0 (sv) | 1999-06-23 |
SE9902395L true SE9902395L (sv) | 2000-12-24 |
SE519975C2 SE519975C2 (sv) | 2003-05-06 |
Family
ID=20416216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9902395A SE519975C2 (sv) | 1999-06-23 | 1999-06-23 | Halvledarstruktur för högspänningshalvledarkomponenter |
Country Status (11)
Country | Link |
---|---|
US (1) | US6538294B1 (sv) |
EP (1) | EP1188185A1 (sv) |
JP (1) | JP2003502864A (sv) |
KR (1) | KR100813759B1 (sv) |
CN (1) | CN1190832C (sv) |
AU (1) | AU6035000A (sv) |
CA (1) | CA2374203A1 (sv) |
HK (1) | HK1047655A1 (sv) |
SE (1) | SE519975C2 (sv) |
TW (1) | TW517259B (sv) |
WO (1) | WO2000079584A1 (sv) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001135719A (ja) * | 1999-11-01 | 2001-05-18 | Denso Corp | 半導体装置の素子分離構造 |
US20040222485A1 (en) * | 2002-12-17 | 2004-11-11 | Haynie Sheldon D. | Bladed silicon-on-insulator semiconductor devices and method of making |
KR100555526B1 (ko) * | 2003-11-12 | 2006-03-03 | 삼성전자주식회사 | 포토 다이오드 및 그 제조방법 |
DE102004016992B4 (de) * | 2004-04-02 | 2009-02-05 | Prema Semiconductor Gmbh | Verfahren zur Herstellung eines Bipolar-Transistors |
JP4979573B2 (ja) * | 2004-04-22 | 2012-07-18 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 半導体構造 |
JP2006140211A (ja) * | 2004-11-10 | 2006-06-01 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置およびその製造方法 |
JP4933776B2 (ja) * | 2005-12-07 | 2012-05-16 | ラピスセミコンダクタ株式会社 | 半導体装置およびその製造方法 |
US7691734B2 (en) * | 2007-03-01 | 2010-04-06 | International Business Machines Corporation | Deep trench based far subcollector reachthrough |
JP5570743B2 (ja) * | 2009-03-09 | 2014-08-13 | 株式会社東芝 | 半導体装置 |
KR102666355B1 (ko) * | 2021-08-10 | 2024-05-14 | 아이디얼 파워 인크. | 양방향 트렌치 파워 스위치를 위한 시스템 및 방법 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3460006A (en) * | 1966-02-28 | 1969-08-05 | Westinghouse Electric Corp | Semiconductor integrated circuits with improved isolation |
JPS5411682A (en) * | 1977-06-28 | 1979-01-27 | Nec Corp | Semiconductor device |
US4214315A (en) * | 1979-03-16 | 1980-07-22 | International Business Machines Corporation | Method for fabricating vertical NPN and PNP structures and the resulting product |
US4274909A (en) * | 1980-03-17 | 1981-06-23 | International Business Machines Corporation | Method for forming ultra fine deep dielectric isolation |
US4454646A (en) * | 1981-08-27 | 1984-06-19 | International Business Machines Corporation | Isolation for high density integrated circuits |
JPS5879735A (ja) * | 1981-11-06 | 1983-05-13 | Nec Corp | 半導体集積回路 |
US4510676A (en) * | 1983-12-06 | 1985-04-16 | International Business Machines, Corporation | Method of fabricating a lateral PNP transistor |
US4534826A (en) * | 1983-12-29 | 1985-08-13 | Ibm Corporation | Trench etch process for dielectric isolation |
IT1214808B (it) | 1984-12-20 | 1990-01-18 | Ates Componenti Elettron | Tico e semiconduttore processo per la formazione di uno strato sepolto e di una regione di collettore in un dispositivo monoli |
US5198372A (en) * | 1986-01-30 | 1993-03-30 | Texas Instruments Incorporated | Method for making a shallow junction bipolar transistor and transistor formed thereby |
US4711017A (en) | 1986-03-03 | 1987-12-08 | Trw Inc. | Formation of buried diffusion devices |
EP0272491B1 (en) * | 1986-12-22 | 1999-07-28 | Texas Instruments Incorporated | Deep trench isolation with surface contact to substrate |
US5343067A (en) | 1987-02-26 | 1994-08-30 | Kabushiki Kaisha Toshiba | High breakdown voltage semiconductor device |
US5592014A (en) | 1987-02-26 | 1997-01-07 | Kabushiki Kaisha Toshiba | High breakdown voltage semiconductor device |
JPH01149464A (ja) * | 1987-12-04 | 1989-06-12 | Nec Corp | 半導体装置 |
JPH0727974B2 (ja) * | 1988-04-26 | 1995-03-29 | 三菱電機株式会社 | 半導体記憶装置の製造方法 |
JPH0271526A (ja) * | 1988-07-07 | 1990-03-12 | Matsushita Electric Ind Co Ltd | 半導体集積回路およびその製造方法 |
US5008210A (en) * | 1989-02-07 | 1991-04-16 | Hewlett-Packard Company | Process of making a bipolar transistor with a trench-isolated emitter |
US5101256A (en) * | 1989-02-13 | 1992-03-31 | International Business Machines Corporation | Bipolar transistor with ultra-thin epitaxial base and method of fabricating same |
US5340755A (en) * | 1989-09-08 | 1994-08-23 | Siemens Aktiegensellschaft | Method of making planar heterobipolar transistor having trenched isolation of the collector terminal |
JP2625602B2 (ja) * | 1991-01-18 | 1997-07-02 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 集積回路デバイスの製造プロセス |
DE69233742D1 (de) | 1991-01-31 | 2008-09-18 | Toshiba Kk | Halbleiterbauelement mit hoher Durchbruchspannung |
US5243207A (en) * | 1991-03-15 | 1993-09-07 | Texas Instruments Incorporated | Method to integrate HBTs and FETs |
JPH05109753A (ja) * | 1991-08-16 | 1993-04-30 | Toshiba Corp | バイポーラトランジスタ |
US5256896A (en) * | 1991-08-30 | 1993-10-26 | International Business Machines Corporation | Polysilicon-collector-on-insulator polysilicon-emitter bipolar transistor |
US5264716A (en) * | 1992-01-09 | 1993-11-23 | International Business Machines Corporation | Diffused buried plate trench dram cell array |
JPH07112049B2 (ja) * | 1992-01-09 | 1995-11-29 | インターナショナル・ビジネス・マシーンズ・コーポレイション | ダイナミック・ランダム・アクセス・メモリ・デバイスおよび製造方法 |
US5250829A (en) * | 1992-01-09 | 1993-10-05 | International Business Machines Corporation | Double well substrate plate trench DRAM cell array |
JP2582519B2 (ja) * | 1992-07-13 | 1997-02-19 | インターナショナル・ビジネス・マシーンズ・コーポレイション | バイポーラ・トランジスタおよびその製造方法 |
US5294558A (en) * | 1993-06-01 | 1994-03-15 | International Business Machines Corporation | Method of making double-self-aligned bipolar transistor structure |
US5485029A (en) * | 1994-06-30 | 1996-01-16 | International Business Machines Corporation | On-chip ground plane for semiconductor devices to reduce parasitic signal propagation |
US5583368A (en) | 1994-08-11 | 1996-12-10 | International Business Machines Corporation | Stacked devices |
US5886374A (en) * | 1998-01-05 | 1999-03-23 | Motorola, Inc. | Optically sensitive device and method |
-
1999
- 1999-06-23 SE SE9902395A patent/SE519975C2/sv not_active IP Right Cessation
- 1999-09-27 TW TW088116507A patent/TW517259B/zh not_active IP Right Cessation
-
2000
- 2000-06-21 US US09/598,172 patent/US6538294B1/en not_active Expired - Lifetime
- 2000-06-21 EP EP00946620A patent/EP1188185A1/en not_active Withdrawn
- 2000-06-21 CA CA002374203A patent/CA2374203A1/en not_active Abandoned
- 2000-06-21 WO PCT/SE2000/001316 patent/WO2000079584A1/en active Application Filing
- 2000-06-21 CN CNB008089345A patent/CN1190832C/zh not_active Expired - Fee Related
- 2000-06-21 JP JP2001505054A patent/JP2003502864A/ja active Pending
- 2000-06-21 AU AU60350/00A patent/AU6035000A/en not_active Abandoned
- 2000-06-21 KR KR1020017016440A patent/KR100813759B1/ko not_active IP Right Cessation
-
2002
- 2002-12-17 HK HK02109143.5A patent/HK1047655A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
KR20020010935A (ko) | 2002-02-06 |
SE9902395D0 (sv) | 1999-06-23 |
AU6035000A (en) | 2001-01-09 |
JP2003502864A (ja) | 2003-01-21 |
SE519975C2 (sv) | 2003-05-06 |
TW517259B (en) | 2003-01-11 |
WO2000079584A1 (en) | 2000-12-28 |
CN1190832C (zh) | 2005-02-23 |
HK1047655A1 (zh) | 2003-02-28 |
CN1355934A (zh) | 2002-06-26 |
KR100813759B1 (ko) | 2008-03-13 |
EP1188185A1 (en) | 2002-03-20 |
US6538294B1 (en) | 2003-03-25 |
CA2374203A1 (en) | 2000-12-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |