SE9804422D0 - Method for wavelength compensation in semi conductor manufacturing - Google Patents
Method for wavelength compensation in semi conductor manufacturingInfo
- Publication number
- SE9804422D0 SE9804422D0 SE9804422A SE9804422A SE9804422D0 SE 9804422 D0 SE9804422 D0 SE 9804422D0 SE 9804422 A SE9804422 A SE 9804422A SE 9804422 A SE9804422 A SE 9804422A SE 9804422 D0 SE9804422 D0 SE 9804422D0
- Authority
- SE
- Sweden
- Prior art keywords
- modulator
- laser
- semi
- band
- conductor manufacturing
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9804422A SE515915C2 (sv) | 1998-12-18 | 1998-12-18 | Metod och integrerad krets för våglängdkompensering vid halvledartillverkning |
TW088100705A TW478008B (en) | 1998-12-18 | 1999-01-18 | Method for wavelength compensation in semiconductor manufacturing |
CNB99814617XA CN1158731C (zh) | 1998-12-18 | 1999-12-15 | 半导体制造中的波长补偿方法 |
KR1020017007413A KR100615531B1 (ko) | 1998-12-18 | 1999-12-15 | 반도체 제조시의 파장 보상 방법 |
PCT/SE1999/002377 WO2000038284A1 (en) | 1998-12-18 | 1999-12-15 | Method for wavelength compensation in semiconductor manufacturing |
JP2000590261A JP2002533940A (ja) | 1998-12-18 | 1999-12-15 | 半導体製造における波長補正の方法 |
EP99964882A EP1142035A1 (en) | 1998-12-18 | 1999-12-15 | Method for wavelength compensation in semiconductor manufacturing |
CA002352228A CA2352228A1 (en) | 1998-12-18 | 1999-12-15 | Method for wavelength compensation in semiconductor manufacturing |
AU30915/00A AU3091500A (en) | 1998-12-18 | 1999-12-15 | Method for wavelength compensation in semiconductor manufacturing |
US09/466,225 US6274398B1 (en) | 1998-12-18 | 1999-12-17 | Method for wavelength compensation in semiconductor photonic IC |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9804422A SE515915C2 (sv) | 1998-12-18 | 1998-12-18 | Metod och integrerad krets för våglängdkompensering vid halvledartillverkning |
Publications (3)
Publication Number | Publication Date |
---|---|
SE9804422D0 true SE9804422D0 (sv) | 1998-12-18 |
SE9804422L SE9804422L (sv) | 2000-06-19 |
SE515915C2 SE515915C2 (sv) | 2001-10-29 |
Family
ID=20413749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9804422A SE515915C2 (sv) | 1998-12-18 | 1998-12-18 | Metod och integrerad krets för våglängdkompensering vid halvledartillverkning |
Country Status (10)
Country | Link |
---|---|
US (1) | US6274398B1 (sv) |
EP (1) | EP1142035A1 (sv) |
JP (1) | JP2002533940A (sv) |
KR (1) | KR100615531B1 (sv) |
CN (1) | CN1158731C (sv) |
AU (1) | AU3091500A (sv) |
CA (1) | CA2352228A1 (sv) |
SE (1) | SE515915C2 (sv) |
TW (1) | TW478008B (sv) |
WO (1) | WO2000038284A1 (sv) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7058246B2 (en) * | 2001-10-09 | 2006-06-06 | Infinera Corporation | Transmitter photonic integrated circuit (TxPIC) chip with enhanced power and yield without on-chip amplification |
US6791746B2 (en) * | 2002-02-12 | 2004-09-14 | Finisar Corporation | Extended bandwidth semiconductor optical amplifier |
JP2014063052A (ja) * | 2012-09-21 | 2014-04-10 | Mitsubishi Electric Corp | 光変調器の製造方法および光変調器 |
JP6291849B2 (ja) * | 2014-01-10 | 2018-03-14 | 三菱電機株式会社 | 半導体装置の製造方法、半導体装置 |
JP6414306B2 (ja) * | 2017-09-27 | 2018-10-31 | 三菱電機株式会社 | 半導体装置の製造方法、半導体装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69115596T2 (de) * | 1990-08-24 | 1996-09-19 | Nec Corp | Verfahren zur Herstellung einer optischen Halbleitervorrichtung |
JP3285426B2 (ja) * | 1993-08-04 | 2002-05-27 | 株式会社日立製作所 | 半導体光集積素子及びその製造方法 |
JPH07176827A (ja) | 1993-08-20 | 1995-07-14 | Mitsubishi Electric Corp | 変調器付半導体レーザ装置の製造方法 |
JPH1056229A (ja) * | 1996-08-08 | 1998-02-24 | Fujitsu Ltd | 半導体光集積素子の製造方法 |
-
1998
- 1998-12-18 SE SE9804422A patent/SE515915C2/sv not_active IP Right Cessation
-
1999
- 1999-01-18 TW TW088100705A patent/TW478008B/zh not_active IP Right Cessation
- 1999-12-15 KR KR1020017007413A patent/KR100615531B1/ko not_active IP Right Cessation
- 1999-12-15 CN CNB99814617XA patent/CN1158731C/zh not_active Expired - Fee Related
- 1999-12-15 WO PCT/SE1999/002377 patent/WO2000038284A1/en not_active Application Discontinuation
- 1999-12-15 AU AU30915/00A patent/AU3091500A/en not_active Abandoned
- 1999-12-15 JP JP2000590261A patent/JP2002533940A/ja active Pending
- 1999-12-15 CA CA002352228A patent/CA2352228A1/en not_active Abandoned
- 1999-12-15 EP EP99964882A patent/EP1142035A1/en not_active Withdrawn
- 1999-12-17 US US09/466,225 patent/US6274398B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20010101208A (ko) | 2001-11-14 |
CA2352228A1 (en) | 2000-06-29 |
US6274398B1 (en) | 2001-08-14 |
AU3091500A (en) | 2000-07-12 |
KR100615531B1 (ko) | 2006-08-25 |
SE515915C2 (sv) | 2001-10-29 |
JP2002533940A (ja) | 2002-10-08 |
CN1158731C (zh) | 2004-07-21 |
WO2000038284A1 (en) | 2000-06-29 |
CN1330805A (zh) | 2002-01-09 |
TW478008B (en) | 2002-03-01 |
EP1142035A1 (en) | 2001-10-10 |
SE9804422L (sv) | 2000-06-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2003034560A1 (en) | Method for fabricating semiconductor light emitting element, semiconductor light emitting element, method for fabricating semiconductor element, semiconductor element, method for fabricating element and element | |
ATE512490T1 (de) | Verfahren zur herstellung von halbleitervorrichtungen mit mesastruktur und mehreren passivierungsschichten | |
KR950007174A (ko) | 반도체광집적회로 및 그 제조방법 | |
ATE552633T1 (de) | Nitridhalbleiterlaser und seine herstellungsmethode | |
DE602006002459D1 (de) | Optoelektronische Vorrichtung mit einem Laser mit integriertem Modulator und Herstellungsverfahren dafür | |
US4249967A (en) | Method of manufacturing a light-emitting diode by liquid phase epitaxy | |
ES2085849T3 (es) | Estructuras semiconductoras y metodo para fabricar estructuras semiconductoras. | |
SE9804422D0 (sv) | Method for wavelength compensation in semi conductor manufacturing | |
CA2129602C (en) | Nanosecond fast electrically tunable fabry-perot filter | |
WO2002031863A3 (en) | A single frequency laser | |
AU2002343185A1 (en) | A method of manufacturing a semiconductor device | |
MY114337A (en) | Be-containing ii-vi blue-green laser diodes | |
ATE302483T1 (de) | Halbleiterlaser mit gitterstruktur | |
KR20070011858A (ko) | 광 모드 변환기를 구비한 반도체 레이저 및 그 제조방법 | |
SE9804423D0 (sv) | Method for channel wavelength compensation in semiconductor manufacturing | |
SE0200750D0 (sv) | Method for manufacturing av photonic device and a photonic device | |
ES2189444T3 (es) | Dispositivos semiconductores electro-opticos y metodo para fabricarlos. | |
JPS6457779A (en) | Manufacture of semiconductor laser | |
JPS57139984A (en) | Buried photo emitting and receiving semiconductor integrated device | |
JPS57172790A (en) | Semiconductor laser device | |
CN117728286A (zh) | 用于宽谱可调谐半导体激光器的外延片 | |
JPS5661187A (en) | Buried-type semiconductor light-emitting element | |
JPS6444085A (en) | Arrayed semiconductor laser | |
KR970068052A (ko) | 레이저 다이오드 및 그 제조방법 | |
KR970054973A (ko) | 레이저 다이오드 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |