SE9804422D0 - Method for wavelength compensation in semi conductor manufacturing - Google Patents

Method for wavelength compensation in semi conductor manufacturing

Info

Publication number
SE9804422D0
SE9804422D0 SE9804422A SE9804422A SE9804422D0 SE 9804422 D0 SE9804422 D0 SE 9804422D0 SE 9804422 A SE9804422 A SE 9804422A SE 9804422 A SE9804422 A SE 9804422A SE 9804422 D0 SE9804422 D0 SE 9804422D0
Authority
SE
Sweden
Prior art keywords
modulator
laser
semi
band
conductor manufacturing
Prior art date
Application number
SE9804422A
Other languages
English (en)
Other versions
SE515915C2 (sv
SE9804422L (sv
Inventor
Eskil Bendz
Lennart Lundqvist
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9804422A priority Critical patent/SE515915C2/sv
Publication of SE9804422D0 publication Critical patent/SE9804422D0/sv
Priority to TW088100705A priority patent/TW478008B/zh
Priority to JP2000590261A priority patent/JP2002533940A/ja
Priority to PCT/SE1999/002377 priority patent/WO2000038284A1/en
Priority to KR1020017007413A priority patent/KR100615531B1/ko
Priority to EP99964882A priority patent/EP1142035A1/en
Priority to CA002352228A priority patent/CA2352228A1/en
Priority to AU30915/00A priority patent/AU3091500A/en
Priority to CNB99814617XA priority patent/CN1158731C/zh
Priority to US09/466,225 priority patent/US6274398B1/en
Publication of SE9804422L publication Critical patent/SE9804422L/sv
Publication of SE515915C2 publication Critical patent/SE515915C2/sv

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265Intensity modulators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054Methods of obtaining the confinement
    • H01S5/2077Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
SE9804422A 1998-12-18 1998-12-18 Metod och integrerad krets för våglängdkompensering vid halvledartillverkning SE515915C2 (sv)

Priority Applications (10)

Application Number Priority Date Filing Date Title
SE9804422A SE515915C2 (sv) 1998-12-18 1998-12-18 Metod och integrerad krets för våglängdkompensering vid halvledartillverkning
TW088100705A TW478008B (en) 1998-12-18 1999-01-18 Method for wavelength compensation in semiconductor manufacturing
CNB99814617XA CN1158731C (zh) 1998-12-18 1999-12-15 半导体制造中的波长补偿方法
KR1020017007413A KR100615531B1 (ko) 1998-12-18 1999-12-15 반도체 제조시의 파장 보상 방법
PCT/SE1999/002377 WO2000038284A1 (en) 1998-12-18 1999-12-15 Method for wavelength compensation in semiconductor manufacturing
JP2000590261A JP2002533940A (ja) 1998-12-18 1999-12-15 半導体製造における波長補正の方法
EP99964882A EP1142035A1 (en) 1998-12-18 1999-12-15 Method for wavelength compensation in semiconductor manufacturing
CA002352228A CA2352228A1 (en) 1998-12-18 1999-12-15 Method for wavelength compensation in semiconductor manufacturing
AU30915/00A AU3091500A (en) 1998-12-18 1999-12-15 Method for wavelength compensation in semiconductor manufacturing
US09/466,225 US6274398B1 (en) 1998-12-18 1999-12-17 Method for wavelength compensation in semiconductor photonic IC

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9804422A SE515915C2 (sv) 1998-12-18 1998-12-18 Metod och integrerad krets för våglängdkompensering vid halvledartillverkning

Publications (3)

Publication Number Publication Date
SE9804422D0 true SE9804422D0 (sv) 1998-12-18
SE9804422L SE9804422L (sv) 2000-06-19
SE515915C2 SE515915C2 (sv) 2001-10-29

Family

ID=20413749

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9804422A SE515915C2 (sv) 1998-12-18 1998-12-18 Metod och integrerad krets för våglängdkompensering vid halvledartillverkning

Country Status (10)

Country Link
US (1) US6274398B1 (sv)
EP (1) EP1142035A1 (sv)
JP (1) JP2002533940A (sv)
KR (1) KR100615531B1 (sv)
CN (1) CN1158731C (sv)
AU (1) AU3091500A (sv)
CA (1) CA2352228A1 (sv)
SE (1) SE515915C2 (sv)
TW (1) TW478008B (sv)
WO (1) WO2000038284A1 (sv)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7058246B2 (en) * 2001-10-09 2006-06-06 Infinera Corporation Transmitter photonic integrated circuit (TxPIC) chip with enhanced power and yield without on-chip amplification
US6791746B2 (en) * 2002-02-12 2004-09-14 Finisar Corporation Extended bandwidth semiconductor optical amplifier
JP2014063052A (ja) * 2012-09-21 2014-04-10 Mitsubishi Electric Corp 光変調器の製造方法および光変調器
JP6291849B2 (ja) * 2014-01-10 2018-03-14 三菱電機株式会社 半導体装置の製造方法、半導体装置
JP6414306B2 (ja) * 2017-09-27 2018-10-31 三菱電機株式会社 半導体装置の製造方法、半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69115596T2 (de) * 1990-08-24 1996-09-19 Nec Corp Verfahren zur Herstellung einer optischen Halbleitervorrichtung
JP3285426B2 (ja) * 1993-08-04 2002-05-27 株式会社日立製作所 半導体光集積素子及びその製造方法
JPH07176827A (ja) 1993-08-20 1995-07-14 Mitsubishi Electric Corp 変調器付半導体レーザ装置の製造方法
JPH1056229A (ja) * 1996-08-08 1998-02-24 Fujitsu Ltd 半導体光集積素子の製造方法

Also Published As

Publication number Publication date
KR20010101208A (ko) 2001-11-14
CA2352228A1 (en) 2000-06-29
US6274398B1 (en) 2001-08-14
AU3091500A (en) 2000-07-12
KR100615531B1 (ko) 2006-08-25
SE515915C2 (sv) 2001-10-29
JP2002533940A (ja) 2002-10-08
CN1158731C (zh) 2004-07-21
WO2000038284A1 (en) 2000-06-29
CN1330805A (zh) 2002-01-09
TW478008B (en) 2002-03-01
EP1142035A1 (en) 2001-10-10
SE9804422L (sv) 2000-06-19

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Legal Events

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