ES2189444T3 - Dispositivos semiconductores electro-opticos y metodo para fabricarlos. - Google Patents

Dispositivos semiconductores electro-opticos y metodo para fabricarlos.

Info

Publication number
ES2189444T3
ES2189444T3 ES99933056T ES99933056T ES2189444T3 ES 2189444 T3 ES2189444 T3 ES 2189444T3 ES 99933056 T ES99933056 T ES 99933056T ES 99933056 T ES99933056 T ES 99933056T ES 2189444 T3 ES2189444 T3 ES 2189444T3
Authority
ES
Spain
Prior art keywords
electro
waveguide
active
core
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES99933056T
Other languages
English (en)
Inventor
Trevor Martin
Michael John Kane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Application granted granted Critical
Publication of ES2189444T3 publication Critical patent/ES2189444T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12173—Masking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Led Devices (AREA)

Abstract

Un dispositivo semiconductor electroóptico (2) que comprende una guía (14) de ondas semiconductora con una región (12) de núcleo dentro de la cual está situada al menos un área activa (31, 31¿) caracterizada porque: el núcleo (12) de la guía (14) de ondas fuera del área o las áreas activas (31, 31¿) no está contaminado por material de área activa difuso; el área o las áreas activas (31, 31¿) y la guía (14) de ondas son monolíticas; y el área o las áreas activas (31, 31¿) y la guía (14) de ondas se desarrollan mediante un procedimiento de desarrollo aditivo sin operación intermedia alguna en la que se elimine material.
ES99933056T 1998-07-18 1999-07-15 Dispositivos semiconductores electro-opticos y metodo para fabricarlos. Expired - Lifetime ES2189444T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9815573.2A GB9815573D0 (en) 1998-07-18 1998-07-18 Electro-optic semiconductor devices and methods for making the same

Publications (1)

Publication Number Publication Date
ES2189444T3 true ES2189444T3 (es) 2003-07-01

Family

ID=10835693

Family Applications (1)

Application Number Title Priority Date Filing Date
ES99933056T Expired - Lifetime ES2189444T3 (es) 1998-07-18 1999-07-15 Dispositivos semiconductores electro-opticos y metodo para fabricarlos.

Country Status (12)

Country Link
US (1) US6630693B1 (es)
EP (1) EP1099283B1 (es)
JP (1) JP2003517714A (es)
KR (1) KR100634217B1 (es)
AT (1) ATE233442T1 (es)
AU (1) AU4923199A (es)
CA (1) CA2338065A1 (es)
DE (1) DE69905580T2 (es)
ES (1) ES2189444T3 (es)
GB (1) GB9815573D0 (es)
TW (1) TW449935B (es)
WO (1) WO2000004616A1 (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7345812B2 (en) * 2003-02-21 2008-03-18 University Of Kansas Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications
JP4464404B2 (ja) * 2004-06-30 2010-05-19 パナソニック株式会社 音響光学素子及びそれを用いた光描画装置
BRPI0419177A (pt) * 2004-11-11 2007-12-18 Ericsson Telecomunicacoes Sa métodos para calibrar os nìveis de dopagem para pelo menos duas camadas de dopagem delta incluìdas em uma estrutura de semicondutor em multicamada e para gerar uma estrutura de semicondutor em multicamada, e, estruturas de semicondutor em multicamada e de poço quántico múltiplo
FR2974423B1 (fr) 2011-04-19 2013-12-27 Commissariat Energie Atomique Dispositif d'emission et de guidage d'un rayonnement infrarouge.
CN109459817B (zh) * 2018-11-30 2020-01-07 北京邮电大学 单片硅基光电集成芯片的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250462A (en) * 1990-08-24 1993-10-05 Nec Corporation Method for fabricating an optical semiconductor device
JP3146505B2 (ja) * 1991-03-15 2001-03-19 日本電気株式会社 集積型半導体レーザ素子
JPH07193329A (ja) * 1993-12-27 1995-07-28 Hitachi Ltd 半導体モードロックレーザ
JP2982619B2 (ja) * 1994-06-29 1999-11-29 日本電気株式会社 半導体光導波路集積型受光素子
US5418183A (en) 1994-09-19 1995-05-23 At&T Corp. Method for a reflective digitally tunable laser

Also Published As

Publication number Publication date
JP2003517714A (ja) 2003-05-27
ATE233442T1 (de) 2003-03-15
TW449935B (en) 2001-08-11
GB9815573D0 (en) 1998-09-16
KR100634217B1 (ko) 2006-10-16
EP1099283B1 (en) 2003-02-26
DE69905580D1 (de) 2003-04-03
AU4923199A (en) 2000-02-07
CA2338065A1 (en) 2000-01-27
KR20010071948A (ko) 2001-07-31
US6630693B1 (en) 2003-10-07
WO2000004616A1 (en) 2000-01-27
EP1099283A1 (en) 2001-05-16
DE69905580T2 (de) 2003-09-04

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