DE69905580D1 - Elektrooptische halbleitervorrichtungen und ihr herstellungsverfahren - Google Patents

Elektrooptische halbleitervorrichtungen und ihr herstellungsverfahren

Info

Publication number
DE69905580D1
DE69905580D1 DE69905580T DE69905580T DE69905580D1 DE 69905580 D1 DE69905580 D1 DE 69905580D1 DE 69905580 T DE69905580 T DE 69905580T DE 69905580 T DE69905580 T DE 69905580T DE 69905580 D1 DE69905580 D1 DE 69905580D1
Authority
DE
Germany
Prior art keywords
waveguide
active
core
production method
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69905580T
Other languages
English (en)
Other versions
DE69905580T2 (de
Inventor
Trevor Martin
Michael John Kane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Application granted granted Critical
Publication of DE69905580D1 publication Critical patent/DE69905580D1/de
Publication of DE69905580T2 publication Critical patent/DE69905580T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12173—Masking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Led Devices (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
DE69905580T 1998-07-18 1999-07-15 Elektrooptische halbleitervorrichtungen und ihr herstellungsverfahren Expired - Lifetime DE69905580T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9815573.2A GB9815573D0 (en) 1998-07-18 1998-07-18 Electro-optic semiconductor devices and methods for making the same
PCT/GB1999/002285 WO2000004616A1 (en) 1998-07-18 1999-07-15 Electro-optic semiconductor devices and method for making the same

Publications (2)

Publication Number Publication Date
DE69905580D1 true DE69905580D1 (de) 2003-04-03
DE69905580T2 DE69905580T2 (de) 2003-09-04

Family

ID=10835693

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69905580T Expired - Lifetime DE69905580T2 (de) 1998-07-18 1999-07-15 Elektrooptische halbleitervorrichtungen und ihr herstellungsverfahren

Country Status (12)

Country Link
US (1) US6630693B1 (de)
EP (1) EP1099283B1 (de)
JP (1) JP2003517714A (de)
KR (1) KR100634217B1 (de)
AT (1) ATE233442T1 (de)
AU (1) AU4923199A (de)
CA (1) CA2338065A1 (de)
DE (1) DE69905580T2 (de)
ES (1) ES2189444T3 (de)
GB (1) GB9815573D0 (de)
TW (1) TW449935B (de)
WO (1) WO2000004616A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7345812B2 (en) * 2003-02-21 2008-03-18 University Of Kansas Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications
US7855823B2 (en) * 2004-06-30 2010-12-21 Panasonic Corporation Acoustooptic device and optical imaging apparatus using the same
JP5015786B2 (ja) * 2004-11-11 2012-08-29 エリクソン テレコムニカソンイス ソシエダット アノニマ デルタドープ多層構造のドーパント較正法
FR2974423B1 (fr) 2011-04-19 2013-12-27 Commissariat Energie Atomique Dispositif d'emission et de guidage d'un rayonnement infrarouge.
CN109459817B (zh) * 2018-11-30 2020-01-07 北京邮电大学 单片硅基光电集成芯片的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250462A (en) 1990-08-24 1993-10-05 Nec Corporation Method for fabricating an optical semiconductor device
JP3146505B2 (ja) * 1991-03-15 2001-03-19 日本電気株式会社 集積型半導体レーザ素子
JPH07193329A (ja) * 1993-12-27 1995-07-28 Hitachi Ltd 半導体モードロックレーザ
JP2982619B2 (ja) * 1994-06-29 1999-11-29 日本電気株式会社 半導体光導波路集積型受光素子
US5418183A (en) * 1994-09-19 1995-05-23 At&T Corp. Method for a reflective digitally tunable laser

Also Published As

Publication number Publication date
EP1099283A1 (de) 2001-05-16
KR100634217B1 (ko) 2006-10-16
ATE233442T1 (de) 2003-03-15
KR20010071948A (ko) 2001-07-31
ES2189444T3 (es) 2003-07-01
CA2338065A1 (en) 2000-01-27
AU4923199A (en) 2000-02-07
DE69905580T2 (de) 2003-09-04
TW449935B (en) 2001-08-11
JP2003517714A (ja) 2003-05-27
GB9815573D0 (en) 1998-09-16
WO2000004616A1 (en) 2000-01-27
EP1099283B1 (de) 2003-02-26
US6630693B1 (en) 2003-10-07

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Legal Events

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8364 No opposition during term of opposition