SE9600199D0 - A semiconductor device with a low resistance ohmic contact between a metal layer and a SiC-layer - Google Patents

A semiconductor device with a low resistance ohmic contact between a metal layer and a SiC-layer

Info

Publication number
SE9600199D0
SE9600199D0 SE9600199A SE9600199A SE9600199D0 SE 9600199 D0 SE9600199 D0 SE 9600199D0 SE 9600199 A SE9600199 A SE 9600199A SE 9600199 A SE9600199 A SE 9600199A SE 9600199 D0 SE9600199 D0 SE 9600199D0
Authority
SE
Sweden
Prior art keywords
layer
sic
semiconductor device
low resistance
ohmic contact
Prior art date
Application number
SE9600199A
Other languages
English (en)
Swedish (sv)
Inventor
Christopher Harris
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE9600199A priority Critical patent/SE9600199D0/xx
Publication of SE9600199D0 publication Critical patent/SE9600199D0/xx
Priority to US08/602,045 priority patent/US5652437A/en
Priority to DE69724934T priority patent/DE69724934T2/de
Priority to JP52592197A priority patent/JP3886149B2/ja
Priority to PCT/SE1997/000062 priority patent/WO1997026678A2/fr
Priority to EP97901298A priority patent/EP0875077B1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0485—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
SE9600199A 1996-01-19 1996-01-19 A semiconductor device with a low resistance ohmic contact between a metal layer and a SiC-layer SE9600199D0 (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE9600199A SE9600199D0 (sv) 1996-01-19 1996-01-19 A semiconductor device with a low resistance ohmic contact between a metal layer and a SiC-layer
US08/602,045 US5652437A (en) 1996-01-19 1996-02-15 Semiconductor device with a low resistance ohmic contact between a metal layer and a sic-layer
DE69724934T DE69724934T2 (de) 1996-01-19 1997-01-17 Halbleiteranordnung mit einem ohmischen kontakt mit niedrigem widerstand zwischen eine metallschicht und eine sic-schicht
JP52592197A JP3886149B2 (ja) 1996-01-19 1997-01-17 金属層とＳｉＣ層との間の低オーム抵抗接点を有する半導体装置
PCT/SE1997/000062 WO1997026678A2 (fr) 1996-01-19 1997-01-17 DISPOSITIF SEMICONDUCTEUR AYANT UN CONTACT OHMIQUE DE FAIBLE RESISTANCE ENTRE UNE COUCHE DE METAL ET UNE COUCHE DE SiC
EP97901298A EP0875077B1 (fr) 1996-01-19 1997-01-17 DISPOSITIF SEMICONDUCTEUR AYANT UN CONTACT OHMIQUE DE FAIBLE RESISTANCE ENTRE UNE COUCHE DE METAL ET UNE COUCHE DE SiC

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9600199A SE9600199D0 (sv) 1996-01-19 1996-01-19 A semiconductor device with a low resistance ohmic contact between a metal layer and a SiC-layer
US08/602,045 US5652437A (en) 1996-01-19 1996-02-15 Semiconductor device with a low resistance ohmic contact between a metal layer and a sic-layer

Publications (1)

Publication Number Publication Date
SE9600199D0 true SE9600199D0 (sv) 1996-01-19

Family

ID=26662478

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9600199A SE9600199D0 (sv) 1996-01-19 1996-01-19 A semiconductor device with a low resistance ohmic contact between a metal layer and a SiC-layer

Country Status (3)

Country Link
US (1) US5652437A (fr)
SE (1) SE9600199D0 (fr)
WO (1) WO1997026678A2 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9901410D0 (sv) * 1999-04-21 1999-04-21 Abb Research Ltd Abipolar transistor
GB2372632A (en) * 2001-02-23 2002-08-28 Sharp Kk A method of growing an InGaN semiconductor layer
US7297626B1 (en) 2001-08-27 2007-11-20 United States Of America As Represented By The Secretary Of The Army Process for nickel silicide Ohmic contacts to n-SiC
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US6815323B1 (en) 2003-01-10 2004-11-09 The United States Of America As Represented By The Secretary Of The Air Force Ohmic contacts on n-type silicon carbide using carbon films
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
US8367510B2 (en) * 2005-09-14 2013-02-05 Central Research Institute Of Electric Power Industry Process for producing silicon carbide semiconductor device
JP5598015B2 (ja) * 2010-02-23 2014-10-01 株式会社デンソー ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法
US9362376B2 (en) 2011-11-23 2016-06-07 Acorn Technologies, Inc. Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
DE112017005855T5 (de) 2016-11-18 2019-08-01 Acorn Technologies, Inc. Nanodrahttransistor mit Source und Drain induziert durch elektrische Kontakte mit negativer Schottky-Barrierenhöhe
JP2020120051A (ja) * 2019-01-25 2020-08-06 株式会社リコー 窒化物半導体多層構造、発光素子、光源装置及び窒化物半導体多層構造の製造方法
CN113571440B (zh) * 2021-06-23 2024-06-18 中国电子科技集团公司第五十五研究所 一种改进型CTLM法测量SiC芯片欧姆接触电阻率的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3984261A (en) * 1974-06-10 1976-10-05 Rca Corporation Ohmic contact
US4583110A (en) * 1984-06-14 1986-04-15 International Business Machines Corporation Intermetallic semiconductor ohmic contact
JPS6271271A (ja) * 1985-09-24 1987-04-01 Sharp Corp 炭化珪素半導体の電極構造
JPS633460A (ja) * 1986-06-19 1988-01-08 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体装置
US5373171A (en) * 1987-03-12 1994-12-13 Sumitomo Electric Industries, Ltd. Thin film single crystal substrate
US4985742A (en) * 1989-07-07 1991-01-15 University Of Colorado Foundation, Inc. High temperature semiconductor devices having at least one gallium nitride layer
US5285109A (en) * 1990-05-24 1994-02-08 Sumitomo Electric Industries, Ltd. Ohmic contact electrodes for n-type semiconductor cubic boron nitride
JP3100644B2 (ja) * 1991-02-22 2000-10-16 株式会社東芝 半導体発光素子及びその製造方法
US5273933A (en) * 1991-07-23 1993-12-28 Kabushiki Kaisha Toshiba Vapor phase growth method of forming film in process of manufacturing semiconductor device

Also Published As

Publication number Publication date
US5652437A (en) 1997-07-29
WO1997026678A3 (fr) 1997-10-02
WO1997026678A2 (fr) 1997-07-24

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