Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
  • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
  • H03F1/342—Negative-feedback-circuit arrangements with or without positive feedback in field-effect transistor amplifiers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
  • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
  • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/78—Field effect transistors with field effect produced by an insulated gate
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
  • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H11/00—Networks using active elements
  • H03H11/02—Multiple-port networks
  • H03H11/24—Frequency-independent attenuators
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H11/00—Networks using active elements
  • H03H11/02—Multiple-port networks
  • H03H11/24—Frequency-independent attenuators
  • H03H11/245—Frequency-independent attenuators using field-effect transistor
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Ceramic Engineering (AREA)
• Amplifiers (AREA)
• Networks Using Active Elements (AREA)
• Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
• Semiconductor Integrated Circuits (AREA)

Applications Claiming Priority (1)

Publications (3)

Family

ID=25516627

Family Applications (2)

Family Applications Before (1)

Country Status (9)

Families Citing this family (6)

Family Cites Families (7)

• 1978
  • 1978-12-18 US US05/970,231 patent/US4197511A/en not_active Expired - Lifetime
• 1979
  • 1979-12-10 SE SE7910152A patent/SE444099B/sv not_active IP Right Cessation
  • 1979-12-13 GB GB7942966A patent/GB2040630B/en not_active Expired
  • 1979-12-14 BE BE0/198575A patent/BE880633A/fr not_active IP Right Cessation
  • 1979-12-14 NL NL7909051A patent/NL7909051A/nl unknown
  • 1979-12-15 DE DE19792950596 patent/DE2950596A1/de active Granted
  • 1979-12-17 FR FR7930842A patent/FR2445025A1/fr active Granted
  • 1979-12-18 JP JP16367679A patent/JPS5583258A/ja active Pending
  • 1979-12-18 IT IT28175/79A patent/IT1126588B/it active
• 1985
  • 1985-07-24 SE SE8503585A patent/SE455454B/sv not_active IP Right Cessation
  • 1985-10-28 JP JP1985165592U patent/JPH04582Y2/ja not_active Expired

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