SE8502375L - Forfarande och anordning for dragning av stavar av monokristallisk kisel - Google Patents

Forfarande och anordning for dragning av stavar av monokristallisk kisel

Info

Publication number
SE8502375L
SE8502375L SE8502375A SE8502375A SE8502375L SE 8502375 L SE8502375 L SE 8502375L SE 8502375 A SE8502375 A SE 8502375A SE 8502375 A SE8502375 A SE 8502375A SE 8502375 L SE8502375 L SE 8502375L
Authority
SE
Sweden
Prior art keywords
melt
silicon
wrapponing
monocristallic
stars
Prior art date
Application number
SE8502375A
Other languages
English (en)
Swedish (sv)
Other versions
SE8502375D0 (sv
Inventor
E Pinkhasov
Original Assignee
Wedtech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wedtech Corp filed Critical Wedtech Corp
Publication of SE8502375D0 publication Critical patent/SE8502375D0/xx
Publication of SE8502375L publication Critical patent/SE8502375L/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
SE8502375A 1984-06-07 1985-05-14 Forfarande och anordning for dragning av stavar av monokristallisk kisel SE8502375L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/618,192 US4575401A (en) 1984-06-07 1984-06-07 Method of and apparatus for the drawing of bars of monocrystalline silicon

Publications (2)

Publication Number Publication Date
SE8502375D0 SE8502375D0 (sv) 1985-05-14
SE8502375L true SE8502375L (sv) 1985-12-08

Family

ID=24476701

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8502375A SE8502375L (sv) 1984-06-07 1985-05-14 Forfarande och anordning for dragning av stavar av monokristallisk kisel

Country Status (10)

Country Link
US (1) US4575401A (de)
JP (1) JPS6163595A (de)
CA (1) CA1241257A (de)
CH (1) CH670456A5 (de)
DE (1) DE3519632A1 (de)
FR (1) FR2565604A1 (de)
GB (1) GB2159728B (de)
IL (1) IL75150A (de)
IT (1) IT1184580B (de)
SE (1) SE8502375L (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0412083A (ja) * 1990-04-27 1992-01-16 Osaka Titanium Co Ltd シリコン単結晶製造方法
DE19638563C2 (de) * 1996-09-20 1999-07-08 Karlsruhe Forschzent Verfahren zum Ziehen von Einkristallen
JP2885240B1 (ja) 1998-03-16 1999-04-19 日本電気株式会社 半導体結晶育成装置および育成方法
JP2007532464A (ja) * 2004-04-15 2007-11-15 ファクルダデ デ シエンシアス ダ ユニベルシダデ デ リスボア 半導体リボンを成長させるための方法
DE102007041803A1 (de) * 2007-08-30 2009-03-05 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab
JP5484589B2 (ja) 2009-11-24 2014-05-07 フォルシュングスフェアブント ベルリン エー ファウ 半導体材料から単結晶を製造する方法および装置
US8920270B2 (en) 2012-06-30 2014-12-30 Easton Technical Products, Inc. Arrow vane apparatus and method
CN112301426B (zh) * 2019-08-02 2022-08-12 宁夏隆基硅材料有限公司 一种单晶硅棒的制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB899287A (en) * 1958-06-12 1962-06-20 Standard Telephones Cables Ltd Method and apparatus for heat treating fusible material
US3160497A (en) * 1962-11-15 1964-12-08 Loung Pai Yen Method of melting refractory metals using a double heating process
DE1243641B (de) * 1962-12-12 1967-07-06 Siemens Ag Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze
US4165361A (en) * 1975-11-28 1979-08-21 Milstein Joseph B Process and apparatus for preparation of single crystals and textured polycrystals
US4116642A (en) * 1976-12-15 1978-09-26 Western Electric Company, Inc. Method and apparatus for avoiding undesirable deposits in crystal growing operations
US4133969A (en) * 1978-01-03 1979-01-09 Zumbrunnen Allen D High frequency resistance melting furnace

Also Published As

Publication number Publication date
GB2159728B (en) 1987-09-16
IT1184580B (it) 1987-10-28
IL75150A0 (en) 1985-09-29
CH670456A5 (de) 1989-06-15
FR2565604A1 (fr) 1985-12-13
US4575401A (en) 1986-03-11
SE8502375D0 (sv) 1985-05-14
CA1241257A (en) 1988-08-30
JPS6163595A (ja) 1986-04-01
DE3519632A1 (de) 1986-01-02
IT8521054A0 (it) 1985-06-06
GB8512471D0 (en) 1985-06-19
GB2159728A (en) 1985-12-11
JPH0114169B2 (de) 1989-03-09
IL75150A (en) 1988-07-31

Similar Documents

Publication Publication Date Title
MY104476A (en) Apparatus for manufacturing silicon single crystals.
SE8502375L (sv) Forfarande och anordning for dragning av stavar av monokristallisk kisel
JPS56134595A (en) Silicon rod crucible free zone melting method and device
JPS5580798A (en) Ribbon crystal growing method by lateral pulling
EP0400266B1 (de) Vorrichtung zur Herstellung von Silicium-Einkristallen
DE3478864D1 (en) Apparatus and method for growing doped monocrystalline silicon semiconductor crystals using the float zone technique
MY104640A (en) Apparatus for manufacturing silicon single crystals.
US3021198A (en) Method for producing semiconductor single crystals
CH612596A5 (en) Process for continuous manufacture of preformed single crystals and device for its use
MY102843A (en) Apparatus for manufacturing semiconductor single crystals
ATE34775T1 (de) Verfahren und anlage zum herstellen von hochreinen legierungen.
GB1572915A (en) Crystallisation device
JPS55113695A (en) Single crystal growing device
JPS55126597A (en) Single crystal growing method
JPS5738397A (en) Apparatus and method for growing crystal
JPS60180989A (ja) 化合物単結晶の製造方法
JPS5497584A (en) Single crsystal manufacturing apparatus
JPH02172888A (ja) シリコン単結晶引き上げ用るつぼ
JPS54141389A (en) Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible
IT7920470A0 (it) Procedimento per formare una zona fusa stabile nella fusione a zone, senza crogiuolo, di una barra dimateriale semiconduttore cristallino.
WENCKUS et al. Growth of high purity oxygen-free silicon by cold crucible techniques[Interim Report, 18 May 1980- 30 May 1981]
JPS56145123A (en) Quartz tool and its preparation
JPS5654299A (en) Growing method of lead molybdate single crystal
JPS6483593A (en) Apparatus for growing semiconductor single crystal
JPH0710672A (ja) 単結晶の製造方法

Legal Events

Date Code Title Description
NAV Patent application has lapsed

Ref document number: 8502375-2

Effective date: 19901201

Format of ref document f/p: F