IL75150A - Method and apparatus for the drawing of bars of monocrystalline silicon - Google Patents

Method and apparatus for the drawing of bars of monocrystalline silicon

Info

Publication number
IL75150A
IL75150A IL75150A IL7515085A IL75150A IL 75150 A IL75150 A IL 75150A IL 75150 A IL75150 A IL 75150A IL 7515085 A IL7515085 A IL 7515085A IL 75150 A IL75150 A IL 75150A
Authority
IL
Israel
Prior art keywords
bars
monocrystalline silicon
monocrystalline
silicon
Prior art date
Application number
IL75150A
Other languages
English (en)
Other versions
IL75150A0 (en
Original Assignee
Wedtech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wedtech Corp filed Critical Wedtech Corp
Publication of IL75150A0 publication Critical patent/IL75150A0/xx
Publication of IL75150A publication Critical patent/IL75150A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10Crucibles or containers for supporting the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1068Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IL75150A 1984-06-07 1985-05-09 Method and apparatus for the drawing of bars of monocrystalline silicon IL75150A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/618,192 US4575401A (en) 1984-06-07 1984-06-07 Method of and apparatus for the drawing of bars of monocrystalline silicon

Publications (2)

Publication Number Publication Date
IL75150A0 IL75150A0 (en) 1985-09-29
IL75150A true IL75150A (en) 1988-07-31

Family

ID=24476701

Family Applications (1)

Application Number Title Priority Date Filing Date
IL75150A IL75150A (en) 1984-06-07 1985-05-09 Method and apparatus for the drawing of bars of monocrystalline silicon

Country Status (10)

Country Link
US (1) US4575401A (de)
JP (1) JPS6163595A (de)
CA (1) CA1241257A (de)
CH (1) CH670456A5 (de)
DE (1) DE3519632A1 (de)
FR (1) FR2565604A1 (de)
GB (1) GB2159728B (de)
IL (1) IL75150A (de)
IT (1) IT1184580B (de)
SE (1) SE8502375L (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0412083A (ja) * 1990-04-27 1992-01-16 Osaka Titanium Co Ltd シリコン単結晶製造方法
DE19638563C2 (de) * 1996-09-20 1999-07-08 Karlsruhe Forschzent Verfahren zum Ziehen von Einkristallen
JP2885240B1 (ja) 1998-03-16 1999-04-19 日本電気株式会社 半導体結晶育成装置および育成方法
JP2007532464A (ja) * 2004-04-15 2007-11-15 ファクルダデ デ シエンシアス ダ ユニベルシダデ デ リスボア 半導体リボンを成長させるための方法
DE102007041803A1 (de) * 2007-08-30 2009-03-05 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab
JP5484589B2 (ja) 2009-11-24 2014-05-07 フォルシュングスフェアブント ベルリン エー ファウ 半導体材料から単結晶を製造する方法および装置
US8920270B2 (en) 2012-06-30 2014-12-30 Easton Technical Products, Inc. Arrow vane apparatus and method
CN112301426B (zh) * 2019-08-02 2022-08-12 宁夏隆基硅材料有限公司 一种单晶硅棒的制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB899287A (en) * 1958-06-12 1962-06-20 Standard Telephones Cables Ltd Method and apparatus for heat treating fusible material
US3160497A (en) * 1962-11-15 1964-12-08 Loung Pai Yen Method of melting refractory metals using a double heating process
DE1243641B (de) * 1962-12-12 1967-07-06 Siemens Ag Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze
US4165361A (en) * 1975-11-28 1979-08-21 Milstein Joseph B Process and apparatus for preparation of single crystals and textured polycrystals
US4116642A (en) * 1976-12-15 1978-09-26 Western Electric Company, Inc. Method and apparatus for avoiding undesirable deposits in crystal growing operations
US4133969A (en) * 1978-01-03 1979-01-09 Zumbrunnen Allen D High frequency resistance melting furnace

Also Published As

Publication number Publication date
GB2159728B (en) 1987-09-16
IT1184580B (it) 1987-10-28
IL75150A0 (en) 1985-09-29
SE8502375L (sv) 1985-12-08
CH670456A5 (de) 1989-06-15
FR2565604A1 (fr) 1985-12-13
US4575401A (en) 1986-03-11
SE8502375D0 (sv) 1985-05-14
CA1241257A (en) 1988-08-30
JPS6163595A (ja) 1986-04-01
DE3519632A1 (de) 1986-01-02
IT8521054A0 (it) 1985-06-06
GB8512471D0 (en) 1985-06-19
GB2159728A (en) 1985-12-11
JPH0114169B2 (de) 1989-03-09

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