SE8003777A - - Google Patents
Info
- Publication number
- SE8003777A SE8003777A SE8003777A SE8003777A SE8003777A SE 8003777 A SE8003777 A SE 8003777A SE 8003777 A SE8003777 A SE 8003777A SE 8003777 A SE8003777 A SE 8003777A SE 8003777 A SE8003777 A SE 8003777A
- Authority
- SE
- Sweden
- Prior art keywords
- strip
- read
- biasing
- slot
- substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 abstract 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Radar Systems Or Details Thereof (AREA)
- Burglar Alarm Systems (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Thermal-radiation imaging devices, elements and systems are described. The device comprises on a substrate (2) e.g. of sapphire semiconductor bodies or body portions in the form of parallel elongate strips (1), e.g. of cadmium mercury telluride. Biasing-electrode means (6 and 7) e.g. of gold are spaced on the strips (1) for causing a bias current predominantly of majority charge carriers to flow along each strip (1). The bias current supports an ambipolar drift of radiation-generated free minority carriers in the opposite direction. At the area of read-out means (8) in the drift path each strip (1) branches into two parts separated by a slot (13) parallel to the strip (1). One part (11 in FIG. 2) provides the continuation of the drift path, while a read-out connection comprises the other part (12 in FIG. 2) and is separated by the slot (13) from the adjacent biasing-electrode means (6 or 7). Metal layers (6, 7, 8) providing the biasing-electrode and read-out connections may extend onto the substrate (2) over a more rounded edge at the ends of each strip (1).
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB07918368A GB2201834B (en) | 1979-05-25 | 1979-05-25 | Imaging devices, elements and systems |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE8003777A true SE8003777A (en) | 1988-08-06 |
| SE464900B SE464900B (en) | 1991-06-24 |
Family
ID=10505464
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8003777A SE464900B (en) | 1979-05-25 | 1980-05-21 | PICTURAL BEARING DEVICE FOR THERMAL RADIATION AND ITS APPLICATION IN A DEVICE TO SCAN A THERMAL RADIATION PICTURE |
| SE8903287A SE464736B (en) | 1979-05-25 | 1989-10-06 | PICTURAL BEARING DEVICE FOR THERMAL RADIATION AND ITS APPLICATION IN A DEVICE TO SCAN A THERMAL RADIATION PICTURE |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8903287A SE464736B (en) | 1979-05-25 | 1989-10-06 | PICTURAL BEARING DEVICE FOR THERMAL RADIATION AND ITS APPLICATION IN A DEVICE TO SCAN A THERMAL RADIATION PICTURE |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4801802A (en) |
| AU (2) | AU570397B1 (en) |
| CA (1) | CA1251548A (en) |
| DE (1) | DE3019481A1 (en) |
| FR (1) | FR2625369B1 (en) |
| GB (1) | GB2201834B (en) |
| IT (1) | IT1209224B (en) |
| NL (1) | NL188551C (en) |
| NO (1) | NO164206C (en) |
| SE (2) | SE464900B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2207802B (en) * | 1982-08-27 | 1989-06-01 | Philips Electronic Associated | Thermal-radiation imaging devices and systems,and the manufacture of such imaging devices |
| US4885620A (en) * | 1984-04-25 | 1989-12-05 | Josef Kemmer | Semiconductor element |
| US5479018A (en) * | 1989-05-08 | 1995-12-26 | Westinghouse Electric Corp. | Back surface illuminated infrared detector |
| GB9204078D0 (en) * | 1992-02-26 | 1992-04-08 | Philips Electronics Uk Ltd | Infrared detector manufacture |
| US6025595A (en) * | 1997-02-07 | 2000-02-15 | He Holdings, Inc. | Sprite thermal imaging system with electronic zoom |
| FR2765730B1 (en) * | 1997-07-04 | 2001-11-30 | Thomson Csf | SEMICONDUCTOR HYBRID COMPONENT |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1488258A (en) * | 1974-11-27 | 1977-10-12 | Secr Defence | Thermal radiation imaging devices and systems |
| US4062107A (en) * | 1976-07-14 | 1977-12-13 | U.S. Philips Corporation | Method of manufacturing infra-red detector |
| GB2007909B (en) * | 1977-11-04 | 1982-02-10 | Secr Defence | Method and apparatus for parallel-in to serial-out conversion |
| US4531059A (en) * | 1984-01-09 | 1985-07-23 | Honeywell Inc. | Non-delineated semiconductor detector array for infra-red |
-
1979
- 1979-05-25 GB GB07918368A patent/GB2201834B/en not_active Expired
-
1980
- 1980-04-30 US US06/153,923 patent/US4801802A/en not_active Expired - Lifetime
- 1980-05-13 CA CA000351793A patent/CA1251548A/en not_active Expired
- 1980-05-14 NO NO801437A patent/NO164206C/en unknown
- 1980-05-20 NL NLAANVRAGE8002890,A patent/NL188551C/en not_active IP Right Cessation
- 1980-05-21 IT IT8022210A patent/IT1209224B/en active
- 1980-05-21 SE SE8003777A patent/SE464900B/en not_active IP Right Cessation
- 1980-05-21 FR FR8011363A patent/FR2625369B1/en not_active Expired - Lifetime
- 1980-05-22 DE DE19803019481 patent/DE3019481A1/en active Granted
- 1980-05-23 AU AU58706/80A patent/AU570397B1/en not_active Ceased
-
1985
- 1985-05-06 AU AU42068/85A patent/AU596782B1/en not_active Ceased
-
1989
- 1989-10-06 SE SE8903287A patent/SE464736B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| NO164206B (en) | 1990-05-28 |
| US4801802A (en) | 1989-01-31 |
| IT1209224B (en) | 1989-07-16 |
| NL8002890A (en) | 1988-08-01 |
| DE3019481C2 (en) | 1993-02-18 |
| CA1251548A (en) | 1989-03-21 |
| NL188551C (en) | 1992-07-16 |
| GB2201834A (en) | 1988-09-07 |
| AU570397B1 (en) | 1988-06-02 |
| AU596782B1 (en) | 1990-05-17 |
| SE464736B (en) | 1991-06-03 |
| GB2201834B (en) | 1989-01-05 |
| SE464900B (en) | 1991-06-24 |
| IT8022210A0 (en) | 1980-05-21 |
| NL188551B (en) | 1992-02-17 |
| NO164206C (en) | 1990-09-19 |
| FR2625369B1 (en) | 1992-12-31 |
| NO801437L (en) | 1988-07-05 |
| FR2625369A1 (en) | 1989-06-30 |
| DE3019481A1 (en) | 1989-01-12 |
| SE8903287A (en) | 1989-10-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |
Ref document number: 8003777-3 Effective date: 19931210 Format of ref document f/p: F |