SE512851C2 - Fördelad förstärkare för bredbandiga mikrovågssignaler - Google Patents

Fördelad förstärkare för bredbandiga mikrovågssignaler

Info

Publication number
SE512851C2
SE512851C2 SE9003737A SE9003737A SE512851C2 SE 512851 C2 SE512851 C2 SE 512851C2 SE 9003737 A SE9003737 A SE 9003737A SE 9003737 A SE9003737 A SE 9003737A SE 512851 C2 SE512851 C2 SE 512851C2
Authority
SE
Sweden
Prior art keywords
common
line
field effect
transistor
collector
Prior art date
Application number
SE9003737A
Other languages
English (en)
Swedish (sv)
Other versions
SE9003737L (no
Inventor
Philippe Dueme
Original Assignee
Dassault Electronique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Publication of SE9003737L publication Critical patent/SE9003737L/xx
Application filed by Dassault Electronique filed Critical Dassault Electronique
Publication of SE512851C2 publication Critical patent/SE512851C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
SE9003737A 1989-11-24 1990-11-23 Fördelad förstärkare för bredbandiga mikrovågssignaler SE512851C2 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8915497A FR2727585B1 (fr) 1989-11-24 1989-11-24 Amplificateur distribue pour signaux hyperfrequences a large bande

Publications (2)

Publication Number Publication Date
SE9003737L SE9003737L (no)
SE512851C2 true SE512851C2 (sv) 2000-05-22

Family

ID=9387763

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9003737A SE512851C2 (sv) 1989-11-24 1990-11-23 Fördelad förstärkare för bredbandiga mikrovågssignaler

Country Status (7)

Country Link
US (1) US5880640A (no)
DE (1) DE4037327C1 (no)
FR (1) FR2727585B1 (no)
GB (1) GB2299906B (no)
IT (1) IT1263169B (no)
NO (1) NO309400B1 (no)
SE (1) SE512851C2 (no)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2783373B1 (fr) * 1998-09-11 2002-10-31 Dassault Electronique Dispositif d'interface entre un capteur optoelectronique hyperfrequence a large bande et une charge
KR100378676B1 (ko) * 2000-09-07 2003-03-31 광주과학기술원 파이형 출력 전송선 구조를 갖는 진행파 증폭기
US6631798B1 (en) * 2000-11-01 2003-10-14 Micron Technology, Inc. Printed circuit board support
FR2818829B1 (fr) * 2000-12-22 2003-03-28 Thomson Csf Diode de decalage en tension realisee en technologie integree monolithique hyperfrequence, notamment pour emetteur optoelectronique hyperfrequence a tres large bande
US6377125B1 (en) 2001-03-15 2002-04-23 Motorola.Inc. Distributed amplifier having separately biased sections
US6433640B1 (en) 2001-05-25 2002-08-13 Motorola, Inc. Methods and apparatus for amplifying a telecommunication signal
US6794934B2 (en) * 2001-12-14 2004-09-21 Iterra Communications, Llc High gain wideband driver amplifier
FR2842963B1 (fr) * 2002-07-23 2004-09-17 Da Lightcom Dispositif de charge active permettant de polariser un circuit amplificateur distribue tres large bande avec controle de gain
US6727762B1 (en) 2002-11-26 2004-04-27 Sirenza Microdevices, Inc. Direct coupled distributed amplifier
US7525385B2 (en) * 2006-10-30 2009-04-28 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Common drain driven cascode enhancement mode traveling wave amplifier
FR2923665B1 (fr) * 2007-11-09 2013-04-19 Thales Sa Structure de balun actif reciproque a large bande passante
US8035449B1 (en) 2009-01-02 2011-10-11 Rf Micro Devices, Inc. Capacitively-coupled distributed amplifier with baseband performance
US8665022B2 (en) 2011-04-28 2014-03-04 Rf Micro Devices, Inc. Low noise-linear power distributed amplifier
US8823455B2 (en) 2011-09-13 2014-09-02 Rf Micro Devices, Inc. Matrix distributed power amplifier
US9093420B2 (en) 2012-04-18 2015-07-28 Rf Micro Devices, Inc. Methods for fabricating high voltage field effect transistor finger terminations
US9124221B2 (en) 2012-07-16 2015-09-01 Rf Micro Devices, Inc. Wide bandwidth radio frequency amplier having dual gate transistors
US8988097B2 (en) 2012-08-24 2015-03-24 Rf Micro Devices, Inc. Method for on-wafer high voltage testing of semiconductor devices
US9147632B2 (en) 2012-08-24 2015-09-29 Rf Micro Devices, Inc. Semiconductor device having improved heat dissipation
US9202874B2 (en) 2012-08-24 2015-12-01 Rf Micro Devices, Inc. Gallium nitride (GaN) device with leakage current-based over-voltage protection
US9142620B2 (en) 2012-08-24 2015-09-22 Rf Micro Devices, Inc. Power device packaging having backmetals couple the plurality of bond pads to the die backside
US9917080B2 (en) 2012-08-24 2018-03-13 Qorvo US. Inc. Semiconductor device with electrical overstress (EOS) protection
WO2014035794A1 (en) 2012-08-27 2014-03-06 Rf Micro Devices, Inc Lateral semiconductor device with vertical breakdown region
US9070761B2 (en) 2012-08-27 2015-06-30 Rf Micro Devices, Inc. Field effect transistor (FET) having fingers with rippled edges
US9325281B2 (en) 2012-10-30 2016-04-26 Rf Micro Devices, Inc. Power amplifier controller
US9013237B1 (en) 2013-05-21 2015-04-21 M/A-Com Technology Solutions Holdings, Inc. Distributed transconductance amplifier
US9455327B2 (en) 2014-06-06 2016-09-27 Qorvo Us, Inc. Schottky gated transistor with interfacial layer
US9536803B2 (en) 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
TWI750216B (zh) * 2016-08-30 2021-12-21 美商Ｍａｃｏｍ技術方案控股公司 具分散式架構之驅動器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2558659B1 (fr) * 1984-01-20 1986-04-25 Thomson Csf Circuit de polarisation d'un transistor a effet de champ
US4668920A (en) * 1984-09-24 1987-05-26 Tektronix, Inc. Power divider/combiner circuit
EP0196098B1 (en) * 1985-03-29 1992-05-20 Honeywell Inc. Broadband amplifier/mixer
US4772858A (en) * 1987-11-04 1988-09-20 Raytheon Company Distributed amplifying switch/rf combiner
FR2623951B1 (fr) * 1987-11-27 1990-03-09 Thomson Hybrides Microondes Amplificateur lineaire hyperfrequence a tres large bande passante
US4973918A (en) * 1988-12-27 1990-11-27 Raytheon Company Distributed amplifying switch/r.f. signal splitter
US5021743A (en) * 1989-11-30 1991-06-04 Raytheon Company Biasing networks for matrix amplifiers

Also Published As

Publication number Publication date
IT1263169B (it) 1996-08-02
NO904934L (no) 1996-01-12
NO309400B1 (no) 2001-01-22
US5880640A (en) 1999-03-09
SE9003737L (no)
GB2299906B (en) 1997-06-11
IT9067890A1 (it) 1992-05-15
FR2727585A1 (fr) 1996-05-31
DE4037327C1 (de) 1996-07-18
IT9067890A0 (no) 1990-11-15
GB9025117D0 (en) 1996-06-19
GB2299906A (en) 1996-10-16
FR2727585B1 (fr) 1999-08-27

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Legal Events

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