FR2727585B1 - Amplificateur distribue pour signaux hyperfrequences a large bande - Google Patents
Amplificateur distribue pour signaux hyperfrequences a large bandeInfo
- Publication number
- FR2727585B1 FR2727585B1 FR8915497A FR8915497A FR2727585B1 FR 2727585 B1 FR2727585 B1 FR 2727585B1 FR 8915497 A FR8915497 A FR 8915497A FR 8915497 A FR8915497 A FR 8915497A FR 2727585 B1 FR2727585 B1 FR 2727585B1
- Authority
- FR
- France
- Prior art keywords
- microwave signals
- distributed amplifier
- broadband microwave
- broadband
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/605—Distributed amplifiers
- H03F3/607—Distributed amplifiers using FET's
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8915497A FR2727585B1 (fr) | 1989-11-24 | 1989-11-24 | Amplificateur distribue pour signaux hyperfrequences a large bande |
US07/605,165 US5880640A (en) | 1989-11-24 | 1990-10-23 | Distributed amplifier for wide band hyperfrequency signals |
NO904934A NO309400B1 (no) | 1989-11-24 | 1990-10-30 | Forsterker for bredbåndshyperfrekvenssignaler |
IT06789090A IT1263169B (it) | 1989-11-24 | 1990-11-15 | Amplificatore distribuito per segnali ad iperfrequenze a larga banda |
GB9025117A GB2299906B (en) | 1989-11-24 | 1990-11-19 | A distributed amplifier for wide band hyperfrequency signals |
SE9003737A SE512851C2 (sv) | 1989-11-24 | 1990-11-23 | Fördelad förstärkare för bredbandiga mikrovågssignaler |
DE4037327A DE4037327C1 (de) | 1989-11-24 | 1990-11-23 | Verteilter Breitbandverstärker für UHF-Signale |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8915497A FR2727585B1 (fr) | 1989-11-24 | 1989-11-24 | Amplificateur distribue pour signaux hyperfrequences a large bande |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2727585A1 FR2727585A1 (fr) | 1996-05-31 |
FR2727585B1 true FR2727585B1 (fr) | 1999-08-27 |
Family
ID=9387763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8915497A Expired - Lifetime FR2727585B1 (fr) | 1989-11-24 | 1989-11-24 | Amplificateur distribue pour signaux hyperfrequences a large bande |
Country Status (7)
Country | Link |
---|---|
US (1) | US5880640A (fr) |
DE (1) | DE4037327C1 (fr) |
FR (1) | FR2727585B1 (fr) |
GB (1) | GB2299906B (fr) |
IT (1) | IT1263169B (fr) |
NO (1) | NO309400B1 (fr) |
SE (1) | SE512851C2 (fr) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2783373B1 (fr) * | 1998-09-11 | 2002-10-31 | Dassault Electronique | Dispositif d'interface entre un capteur optoelectronique hyperfrequence a large bande et une charge |
KR100378676B1 (ko) * | 2000-09-07 | 2003-03-31 | 광주과학기술원 | 파이형 출력 전송선 구조를 갖는 진행파 증폭기 |
US6631798B1 (en) * | 2000-11-01 | 2003-10-14 | Micron Technology, Inc. | Printed circuit board support |
FR2818829B1 (fr) * | 2000-12-22 | 2003-03-28 | Thomson Csf | Diode de decalage en tension realisee en technologie integree monolithique hyperfrequence, notamment pour emetteur optoelectronique hyperfrequence a tres large bande |
US6377125B1 (en) | 2001-03-15 | 2002-04-23 | Motorola.Inc. | Distributed amplifier having separately biased sections |
US6433640B1 (en) | 2001-05-25 | 2002-08-13 | Motorola, Inc. | Methods and apparatus for amplifying a telecommunication signal |
US6794934B2 (en) * | 2001-12-14 | 2004-09-21 | Iterra Communications, Llc | High gain wideband driver amplifier |
FR2842963B1 (fr) * | 2002-07-23 | 2004-09-17 | Da Lightcom | Dispositif de charge active permettant de polariser un circuit amplificateur distribue tres large bande avec controle de gain |
US6727762B1 (en) | 2002-11-26 | 2004-04-27 | Sirenza Microdevices, Inc. | Direct coupled distributed amplifier |
US7525385B2 (en) * | 2006-10-30 | 2009-04-28 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Common drain driven cascode enhancement mode traveling wave amplifier |
FR2923665B1 (fr) * | 2007-11-09 | 2013-04-19 | Thales Sa | Structure de balun actif reciproque a large bande passante |
US8035449B1 (en) | 2009-01-02 | 2011-10-11 | Rf Micro Devices, Inc. | Capacitively-coupled distributed amplifier with baseband performance |
US8665022B2 (en) | 2011-04-28 | 2014-03-04 | Rf Micro Devices, Inc. | Low noise-linear power distributed amplifier |
US8823455B2 (en) | 2011-09-13 | 2014-09-02 | Rf Micro Devices, Inc. | Matrix distributed power amplifier |
US9093420B2 (en) | 2012-04-18 | 2015-07-28 | Rf Micro Devices, Inc. | Methods for fabricating high voltage field effect transistor finger terminations |
US9124221B2 (en) | 2012-07-16 | 2015-09-01 | Rf Micro Devices, Inc. | Wide bandwidth radio frequency amplier having dual gate transistors |
US8988097B2 (en) | 2012-08-24 | 2015-03-24 | Rf Micro Devices, Inc. | Method for on-wafer high voltage testing of semiconductor devices |
US9147632B2 (en) | 2012-08-24 | 2015-09-29 | Rf Micro Devices, Inc. | Semiconductor device having improved heat dissipation |
US9202874B2 (en) | 2012-08-24 | 2015-12-01 | Rf Micro Devices, Inc. | Gallium nitride (GaN) device with leakage current-based over-voltage protection |
US9142620B2 (en) | 2012-08-24 | 2015-09-22 | Rf Micro Devices, Inc. | Power device packaging having backmetals couple the plurality of bond pads to the die backside |
US9917080B2 (en) | 2012-08-24 | 2018-03-13 | Qorvo US. Inc. | Semiconductor device with electrical overstress (EOS) protection |
WO2014035794A1 (fr) | 2012-08-27 | 2014-03-06 | Rf Micro Devices, Inc | Dispositif latéral à semi-conducteur à région verticale de claquage |
US9070761B2 (en) | 2012-08-27 | 2015-06-30 | Rf Micro Devices, Inc. | Field effect transistor (FET) having fingers with rippled edges |
US9325281B2 (en) | 2012-10-30 | 2016-04-26 | Rf Micro Devices, Inc. | Power amplifier controller |
US9013237B1 (en) | 2013-05-21 | 2015-04-21 | M/A-Com Technology Solutions Holdings, Inc. | Distributed transconductance amplifier |
US9455327B2 (en) | 2014-06-06 | 2016-09-27 | Qorvo Us, Inc. | Schottky gated transistor with interfacial layer |
US9536803B2 (en) | 2014-09-05 | 2017-01-03 | Qorvo Us, Inc. | Integrated power module with improved isolation and thermal conductivity |
US10615158B2 (en) | 2015-02-04 | 2020-04-07 | Qorvo Us, Inc. | Transition frequency multiplier semiconductor device |
US10062684B2 (en) | 2015-02-04 | 2018-08-28 | Qorvo Us, Inc. | Transition frequency multiplier semiconductor device |
TWI750216B (zh) * | 2016-08-30 | 2021-12-21 | 美商Macom技術方案控股公司 | 具分散式架構之驅動器 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2558659B1 (fr) * | 1984-01-20 | 1986-04-25 | Thomson Csf | Circuit de polarisation d'un transistor a effet de champ |
US4668920A (en) * | 1984-09-24 | 1987-05-26 | Tektronix, Inc. | Power divider/combiner circuit |
EP0196098B1 (fr) * | 1985-03-29 | 1992-05-20 | Honeywell Inc. | Amplificateur/mélangeur à large bande |
US4772858A (en) * | 1987-11-04 | 1988-09-20 | Raytheon Company | Distributed amplifying switch/rf combiner |
FR2623951B1 (fr) * | 1987-11-27 | 1990-03-09 | Thomson Hybrides Microondes | Amplificateur lineaire hyperfrequence a tres large bande passante |
US4973918A (en) * | 1988-12-27 | 1990-11-27 | Raytheon Company | Distributed amplifying switch/r.f. signal splitter |
US5021743A (en) * | 1989-11-30 | 1991-06-04 | Raytheon Company | Biasing networks for matrix amplifiers |
-
1989
- 1989-11-24 FR FR8915497A patent/FR2727585B1/fr not_active Expired - Lifetime
-
1990
- 1990-10-23 US US07/605,165 patent/US5880640A/en not_active Expired - Fee Related
- 1990-10-30 NO NO904934A patent/NO309400B1/no not_active IP Right Cessation
- 1990-11-15 IT IT06789090A patent/IT1263169B/it active IP Right Grant
- 1990-11-19 GB GB9025117A patent/GB2299906B/en not_active Expired - Lifetime
- 1990-11-23 DE DE4037327A patent/DE4037327C1/de not_active Expired - Lifetime
- 1990-11-23 SE SE9003737A patent/SE512851C2/sv not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
IT1263169B (it) | 1996-08-02 |
NO904934L (no) | 1996-01-12 |
NO309400B1 (no) | 2001-01-22 |
SE512851C2 (sv) | 2000-05-22 |
US5880640A (en) | 1999-03-09 |
SE9003737L (fr) | |
GB2299906B (en) | 1997-06-11 |
IT9067890A1 (it) | 1992-05-15 |
FR2727585A1 (fr) | 1996-05-31 |
DE4037327C1 (de) | 1996-07-18 |
IT9067890A0 (fr) | 1990-11-15 |
GB9025117D0 (en) | 1996-06-19 |
GB2299906A (en) | 1996-10-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name |