|
FR2783373B1
(fr)
*
|
1998-09-11 |
2002-10-31 |
Dassault Electronique |
Dispositif d'interface entre un capteur optoelectronique hyperfrequence a large bande et une charge
|
|
KR100378676B1
(ko)
*
|
2000-09-07 |
2003-03-31 |
광주과학기술원 |
파이형 출력 전송선 구조를 갖는 진행파 증폭기
|
|
US6631798B1
(en)
*
|
2000-11-01 |
2003-10-14 |
Micron Technology, Inc. |
Printed circuit board support
|
|
FR2818829B1
(fr)
*
|
2000-12-22 |
2003-03-28 |
Thomson Csf |
Diode de decalage en tension realisee en technologie integree monolithique hyperfrequence, notamment pour emetteur optoelectronique hyperfrequence a tres large bande
|
|
US6377125B1
(en)
|
2001-03-15 |
2002-04-23 |
Motorola.Inc. |
Distributed amplifier having separately biased sections
|
|
US6433640B1
(en)
|
2001-05-25 |
2002-08-13 |
Motorola, Inc. |
Methods and apparatus for amplifying a telecommunication signal
|
|
US6794934B2
(en)
*
|
2001-12-14 |
2004-09-21 |
Iterra Communications, Llc |
High gain wideband driver amplifier
|
|
FR2842963B1
(fr)
*
|
2002-07-23 |
2004-09-17 |
Da Lightcom |
Dispositif de charge active permettant de polariser un circuit amplificateur distribue tres large bande avec controle de gain
|
|
US6727762B1
(en)
|
2002-11-26 |
2004-04-27 |
Sirenza Microdevices, Inc. |
Direct coupled distributed amplifier
|
|
US7525385B2
(en)
*
|
2006-10-30 |
2009-04-28 |
Avago Technologies Wireless Ip (Singapore) Pte. Ltd. |
Common drain driven cascode enhancement mode traveling wave amplifier
|
|
FR2923665B1
(fr)
*
|
2007-11-09 |
2013-04-19 |
Thales Sa |
Structure de balun actif reciproque a large bande passante
|
|
US8035449B1
(en)
|
2009-01-02 |
2011-10-11 |
Rf Micro Devices, Inc. |
Capacitively-coupled distributed amplifier with baseband performance
|
|
US8665022B2
(en)
|
2011-04-28 |
2014-03-04 |
Rf Micro Devices, Inc. |
Low noise-linear power distributed amplifier
|
|
US8823455B2
(en)
|
2011-09-13 |
2014-09-02 |
Rf Micro Devices, Inc. |
Matrix distributed power amplifier
|
|
US9093420B2
(en)
|
2012-04-18 |
2015-07-28 |
Rf Micro Devices, Inc. |
Methods for fabricating high voltage field effect transistor finger terminations
|
|
US9124221B2
(en)
|
2012-07-16 |
2015-09-01 |
Rf Micro Devices, Inc. |
Wide bandwidth radio frequency amplier having dual gate transistors
|
|
US8988097B2
(en)
|
2012-08-24 |
2015-03-24 |
Rf Micro Devices, Inc. |
Method for on-wafer high voltage testing of semiconductor devices
|
|
US9147632B2
(en)
|
2012-08-24 |
2015-09-29 |
Rf Micro Devices, Inc. |
Semiconductor device having improved heat dissipation
|
|
US9202874B2
(en)
|
2012-08-24 |
2015-12-01 |
Rf Micro Devices, Inc. |
Gallium nitride (GaN) device with leakage current-based over-voltage protection
|
|
US9142620B2
(en)
|
2012-08-24 |
2015-09-22 |
Rf Micro Devices, Inc. |
Power device packaging having backmetals couple the plurality of bond pads to the die backside
|
|
US9917080B2
(en)
|
2012-08-24 |
2018-03-13 |
Qorvo US. Inc. |
Semiconductor device with electrical overstress (EOS) protection
|
|
WO2014035794A1
(en)
|
2012-08-27 |
2014-03-06 |
Rf Micro Devices, Inc |
Lateral semiconductor device with vertical breakdown region
|
|
US9070761B2
(en)
|
2012-08-27 |
2015-06-30 |
Rf Micro Devices, Inc. |
Field effect transistor (FET) having fingers with rippled edges
|
|
US9325281B2
(en)
|
2012-10-30 |
2016-04-26 |
Rf Micro Devices, Inc. |
Power amplifier controller
|
|
US9013237B1
(en)
|
2013-05-21 |
2015-04-21 |
M/A-Com Technology Solutions Holdings, Inc. |
Distributed transconductance amplifier
|
|
US9455327B2
(en)
|
2014-06-06 |
2016-09-27 |
Qorvo Us, Inc. |
Schottky gated transistor with interfacial layer
|
|
US9536803B2
(en)
|
2014-09-05 |
2017-01-03 |
Qorvo Us, Inc. |
Integrated power module with improved isolation and thermal conductivity
|
|
US10615158B2
(en)
|
2015-02-04 |
2020-04-07 |
Qorvo Us, Inc. |
Transition frequency multiplier semiconductor device
|
|
US10062684B2
(en)
|
2015-02-04 |
2018-08-28 |
Qorvo Us, Inc. |
Transition frequency multiplier semiconductor device
|
|
TWI750216B
(zh)
*
|
2016-08-30 |
2021-12-21 |
美商Ｍａｃｏｍ技術方案控股公司 |
具分散式架構之驅動器
|