SE466078B - Anordning vid en skaerm hos en integrerad krets och foerfarande foer framstaellning av anordningen - Google Patents

Anordning vid en skaerm hos en integrerad krets och foerfarande foer framstaellning av anordningen

Info

Publication number
SE466078B
SE466078B SE9001403A SE9001403A SE466078B SE 466078 B SE466078 B SE 466078B SE 9001403 A SE9001403 A SE 9001403A SE 9001403 A SE9001403 A SE 9001403A SE 466078 B SE466078 B SE 466078B
Authority
SE
Sweden
Prior art keywords
layer
polycrystalline
semiconductor
ions
doped
Prior art date
Application number
SE9001403A
Other languages
English (en)
Swedish (sv)
Other versions
SE9001403D0 (sv
SE9001403L (sv
Inventor
B S Andersson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9001403A priority Critical patent/SE466078B/sv
Publication of SE9001403D0 publication Critical patent/SE9001403D0/xx
Priority to EP91850073A priority patent/EP0453424B1/de
Priority to DE69109929T priority patent/DE69109929T2/de
Priority to US07/680,509 priority patent/US5196723A/en
Priority to JP08801391A priority patent/JP3311759B2/ja
Publication of SE9001403L publication Critical patent/SE9001403L/
Publication of SE466078B publication Critical patent/SE466078B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
SE9001403A 1990-04-20 1990-04-20 Anordning vid en skaerm hos en integrerad krets och foerfarande foer framstaellning av anordningen SE466078B (sv)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE9001403A SE466078B (sv) 1990-04-20 1990-04-20 Anordning vid en skaerm hos en integrerad krets och foerfarande foer framstaellning av anordningen
EP91850073A EP0453424B1 (de) 1990-04-20 1991-03-20 Integrierte Schaltungsanordnung mit Abschirmungsvorrichtung und Verfahren zu ihrer Herstellung
DE69109929T DE69109929T2 (de) 1990-04-20 1991-03-20 Integrierte Schaltungsanordnung mit Abschirmungsvorrichtung und Verfahren zu ihrer Herstellung.
US07/680,509 US5196723A (en) 1990-04-20 1991-04-04 Integrated circuit screen arrangement and a method for its manufacture
JP08801391A JP3311759B2 (ja) 1990-04-20 1991-04-19 スクリーン構造を有する集積回路およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9001403A SE466078B (sv) 1990-04-20 1990-04-20 Anordning vid en skaerm hos en integrerad krets och foerfarande foer framstaellning av anordningen

Publications (3)

Publication Number Publication Date
SE9001403D0 SE9001403D0 (sv) 1990-04-20
SE9001403L SE9001403L (sv) 1991-10-21
SE466078B true SE466078B (sv) 1991-12-09

Family

ID=20379222

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9001403A SE466078B (sv) 1990-04-20 1990-04-20 Anordning vid en skaerm hos en integrerad krets och foerfarande foer framstaellning av anordningen

Country Status (5)

Country Link
US (1) US5196723A (de)
EP (1) EP0453424B1 (de)
JP (1) JP3311759B2 (de)
DE (1) DE69109929T2 (de)
SE (1) SE466078B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5541442A (en) * 1994-08-31 1996-07-30 International Business Machines Corporation Integrated compact capacitor-resistor/inductor configuration
AU2187397A (en) 1996-03-22 1997-10-10 Telefonaktiebolaget Lm Ericsson (Publ) Semiconductor device shielded by an array of electrically conducting pins and a method to manufacture such a device
SE511816C3 (sv) * 1996-06-17 2000-01-24 Ericsson Telefon Ab L M Resistor innefattande en resistorkropp av polykristallint kisel samt foerfarande foer framstaellning av en saadan
WO1998049732A2 (en) * 1997-04-28 1998-11-05 Koninklijke Philips Electronics N.V. Lateral mos transistor device
US6836022B2 (en) * 2003-02-13 2004-12-28 Medtronic, Inc. High voltage flip-chip component package and method for forming the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836598B1 (de) * 1969-09-05 1973-11-06
US3602782A (en) * 1969-12-05 1971-08-31 Thomas Klein Conductor-insulator-semiconductor fieldeffect transistor with semiconductor layer embedded in dielectric underneath interconnection layer
US3751722A (en) * 1971-04-30 1973-08-07 Standard Microsyst Smc Mos integrated circuit with substrate containing selectively formed resistivity regions
US3787717A (en) * 1971-12-09 1974-01-22 Ibm Over voltage protection circuit lateral bipolar transistor with gated collector junction
JPS55123157A (en) * 1979-03-16 1980-09-22 Oki Electric Ind Co Ltd High-stability ion-injected resistor
US4430663A (en) * 1981-03-25 1984-02-07 Bell Telephone Laboratories, Incorporated Prevention of surface channels in silicon semiconductor devices
US4613886A (en) * 1981-07-09 1986-09-23 Intel Corporation CMOS static memory cell
US4764800A (en) * 1986-05-07 1988-08-16 Advanced Micro Devices, Inc. Seal structure for an integrated circuit

Also Published As

Publication number Publication date
SE9001403D0 (sv) 1990-04-20
JP3311759B2 (ja) 2002-08-05
DE69109929D1 (de) 1995-06-29
SE9001403L (sv) 1991-10-21
JPH0661435A (ja) 1994-03-04
US5196723A (en) 1993-03-23
EP0453424A1 (de) 1991-10-23
EP0453424B1 (de) 1995-05-24
DE69109929T2 (de) 1995-11-02

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