SE444484B - Integrerad kretsanordning innefattande bl a en minnescell med en forsta och en andra inverterare - Google Patents
Integrerad kretsanordning innefattande bl a en minnescell med en forsta och en andra inverterareInfo
- Publication number
- SE444484B SE444484B SE8001225A SE8001225A SE444484B SE 444484 B SE444484 B SE 444484B SE 8001225 A SE8001225 A SE 8001225A SE 8001225 A SE8001225 A SE 8001225A SE 444484 B SE444484 B SE 444484B
- Authority
- SE
- Sweden
- Prior art keywords
- channel
- inverter
- transistor
- collector
- polycrystalline silicon
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 17
- 230000005669 field effect Effects 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 101100298295 Drosophila melanogaster flfl gene Proteins 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012258 culturing Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000002101 lytic effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- LUMVCLJFHCTMCV-UHFFFAOYSA-M potassium;hydroxide;hydrate Chemical compound O.[OH-].[K+] LUMVCLJFHCTMCV-UHFFFAOYSA-M 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1520379A | 1979-02-26 | 1979-02-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
SE8001225L SE8001225L (sv) | 1980-08-27 |
SE444484B true SE444484B (sv) | 1986-04-14 |
Family
ID=21770084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE8001225A SE444484B (sv) | 1979-02-26 | 1980-02-15 | Integrerad kretsanordning innefattande bl a en minnescell med en forsta och en andra inverterare |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS55117266A (en, 2012) |
DE (1) | DE3006442A1 (en, 2012) |
FR (1) | FR2449973A1 (en, 2012) |
IT (1) | IT1141377B (en, 2012) |
SE (1) | SE444484B (en, 2012) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5678157A (en) * | 1979-11-29 | 1981-06-26 | Toshiba Corp | Semiconductor device |
DE3147951A1 (de) * | 1981-12-03 | 1983-06-16 | Siemens AG, 1000 Berlin und 8000 München | Statische speicherzelle |
JPS59130459A (ja) * | 1983-01-17 | 1984-07-27 | Hitachi Ltd | 半導体メモリ集積回路装置 |
JPH065714B2 (ja) * | 1983-07-26 | 1994-01-19 | 日本電気株式会社 | 半導体メモリセル |
EP0349021B1 (en) * | 1985-01-30 | 1994-12-28 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
US4805148A (en) * | 1985-11-22 | 1989-02-14 | Diehl Nagle Sherra E | High impendance-coupled CMOS SRAM for improved single event immunity |
US5239503A (en) * | 1992-06-17 | 1993-08-24 | Aptix Corporation | High voltage random-access memory cell incorporating level shifter |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1054714A (en) * | 1974-10-09 | 1979-05-15 | James A. Luisi | High speed memory cell |
-
1980
- 1980-02-15 SE SE8001225A patent/SE444484B/sv not_active IP Right Cessation
- 1980-02-21 JP JP2149980A patent/JPS55117266A/ja active Granted
- 1980-02-21 DE DE19803006442 patent/DE3006442A1/de active Granted
- 1980-02-22 IT IT20130/80A patent/IT1141377B/it active
- 1980-02-25 FR FR8004080A patent/FR2449973A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0117264B2 (en, 2012) | 1989-03-29 |
FR2449973B1 (en, 2012) | 1984-10-19 |
JPS55117266A (en) | 1980-09-09 |
FR2449973A1 (fr) | 1980-09-19 |
SE8001225L (sv) | 1980-08-27 |
IT1141377B (it) | 1986-10-01 |
IT8020130A0 (it) | 1980-02-22 |
DE3006442A1 (de) | 1980-09-04 |
DE3006442C2 (en, 2012) | 1990-06-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4740826A (en) | Vertical inverter | |
US4724530A (en) | Five transistor CMOS memory cell including diodes | |
EP0805499B1 (en) | High withstand voltage M I S field effect transistor and semiconductor integrated circuit | |
US4996575A (en) | Low leakage silicon-on-insulator CMOS structure and method of making same | |
US4555721A (en) | Structure of stacked, complementary MOS field effect transistor circuits | |
EP0169346B1 (en) | Dynamic memory cell and method for manufacturing the same | |
WO1983003709A1 (en) | Process for forming complementary integrated circuit devices | |
KR100199465B1 (ko) | 반도체 디바이스용으로 제조되는 접점구조물 및 이를 제조하는 방법 | |
EP0084500B1 (en) | Ion implanted memory cells for high density ram | |
KR910006672B1 (ko) | 반도체 집적회로 장치 및 그의 제조 방법 | |
US4788158A (en) | Method of making vertical inverter | |
SE444484B (sv) | Integrerad kretsanordning innefattande bl a en minnescell med en forsta och en andra inverterare | |
GB1580471A (en) | Semi-conductor integrated circuits | |
JPS59204232A (ja) | 相補形mos構造体の形成方法 | |
EP0066068B1 (en) | Structure and process for fabrication of stacked complementary mos field effect transistor devices | |
KR930009028B1 (ko) | 반도체 집적회로와 그 제조방법 | |
US4860086A (en) | Semiconductor device | |
GB1593937A (en) | I2l integrated circuitry | |
US6445057B1 (en) | Semiconductor device having a trimming circuit for suppressing leakage current | |
EP0120529B1 (en) | Integrated logic circuit | |
JP2508826B2 (ja) | 半導体装置 | |
EP0281032B1 (en) | Semiconductor device comprising a field effect transistor | |
JPH0517711B2 (en, 2012) | ||
JPH07130898A (ja) | 半導体装置およびその製造方法 | |
JPS58176964A (ja) | 相補型mos半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |
Ref document number: 8001225-5 Effective date: 19910911 Format of ref document f/p: F |