SE444484B - Integrerad kretsanordning innefattande bl a en minnescell med en forsta och en andra inverterare - Google Patents

Integrerad kretsanordning innefattande bl a en minnescell med en forsta och en andra inverterare

Info

Publication number
SE444484B
SE444484B SE8001225A SE8001225A SE444484B SE 444484 B SE444484 B SE 444484B SE 8001225 A SE8001225 A SE 8001225A SE 8001225 A SE8001225 A SE 8001225A SE 444484 B SE444484 B SE 444484B
Authority
SE
Sweden
Prior art keywords
channel
inverter
transistor
collector
polycrystalline silicon
Prior art date
Application number
SE8001225A
Other languages
English (en)
Swedish (sv)
Other versions
SE8001225L (sv
Inventor
A G F Dingwall
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE8001225L publication Critical patent/SE8001225L/
Publication of SE444484B publication Critical patent/SE444484B/sv

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
SE8001225A 1979-02-26 1980-02-15 Integrerad kretsanordning innefattande bl a en minnescell med en forsta och en andra inverterare SE444484B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1520379A 1979-02-26 1979-02-26

Publications (2)

Publication Number Publication Date
SE8001225L SE8001225L (sv) 1980-08-27
SE444484B true SE444484B (sv) 1986-04-14

Family

ID=21770084

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8001225A SE444484B (sv) 1979-02-26 1980-02-15 Integrerad kretsanordning innefattande bl a en minnescell med en forsta och en andra inverterare

Country Status (5)

Country Link
JP (1) JPS55117266A (en, 2012)
DE (1) DE3006442A1 (en, 2012)
FR (1) FR2449973A1 (en, 2012)
IT (1) IT1141377B (en, 2012)
SE (1) SE444484B (en, 2012)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678157A (en) * 1979-11-29 1981-06-26 Toshiba Corp Semiconductor device
DE3147951A1 (de) * 1981-12-03 1983-06-16 Siemens AG, 1000 Berlin und 8000 München Statische speicherzelle
JPS59130459A (ja) * 1983-01-17 1984-07-27 Hitachi Ltd 半導体メモリ集積回路装置
JPH065714B2 (ja) * 1983-07-26 1994-01-19 日本電気株式会社 半導体メモリセル
EP0349021B1 (en) * 1985-01-30 1994-12-28 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US4805148A (en) * 1985-11-22 1989-02-14 Diehl Nagle Sherra E High impendance-coupled CMOS SRAM for improved single event immunity
US5239503A (en) * 1992-06-17 1993-08-24 Aptix Corporation High voltage random-access memory cell incorporating level shifter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1054714A (en) * 1974-10-09 1979-05-15 James A. Luisi High speed memory cell

Also Published As

Publication number Publication date
JPH0117264B2 (en, 2012) 1989-03-29
FR2449973B1 (en, 2012) 1984-10-19
JPS55117266A (en) 1980-09-09
FR2449973A1 (fr) 1980-09-19
SE8001225L (sv) 1980-08-27
IT1141377B (it) 1986-10-01
IT8020130A0 (it) 1980-02-22
DE3006442A1 (de) 1980-09-04
DE3006442C2 (en, 2012) 1990-06-07

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