JPH0517711B2 - - Google Patents

Info

Publication number
JPH0517711B2
JPH0517711B2 JP58200214A JP20021483A JPH0517711B2 JP H0517711 B2 JPH0517711 B2 JP H0517711B2 JP 58200214 A JP58200214 A JP 58200214A JP 20021483 A JP20021483 A JP 20021483A JP H0517711 B2 JPH0517711 B2 JP H0517711B2
Authority
JP
Japan
Prior art keywords
type
island
region
insulating substrate
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58200214A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6092653A (ja
Inventor
Junichi Oono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58200214A priority Critical patent/JPS6092653A/ja
Publication of JPS6092653A publication Critical patent/JPS6092653A/ja
Publication of JPH0517711B2 publication Critical patent/JPH0517711B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP58200214A 1983-10-26 1983-10-26 半導体集積回路装置 Granted JPS6092653A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58200214A JPS6092653A (ja) 1983-10-26 1983-10-26 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58200214A JPS6092653A (ja) 1983-10-26 1983-10-26 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS6092653A JPS6092653A (ja) 1985-05-24
JPH0517711B2 true JPH0517711B2 (en, 2012) 1993-03-09

Family

ID=16420708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58200214A Granted JPS6092653A (ja) 1983-10-26 1983-10-26 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS6092653A (en, 2012)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2679034B2 (ja) * 1986-09-11 1997-11-19 セイコーエプソン株式会社 半導体集積装置
US5264720A (en) * 1989-09-22 1993-11-23 Nippondenso Co., Ltd. High withstanding voltage transistor
JP3080035B2 (ja) * 1997-06-06 2000-08-21 日本電気株式会社 半導体集積回路装置及びその製造方法
US6414357B1 (en) 1998-06-05 2002-07-02 Nec Corporation Master-slice type semiconductor IC device with different kinds of basic cells
JP4618948B2 (ja) * 2001-08-24 2011-01-26 株式会社半導体エネルギー研究所 半導体装置の評価方法

Also Published As

Publication number Publication date
JPS6092653A (ja) 1985-05-24

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