JPS55117266A - Integrated circuit structure - Google Patents
Integrated circuit structureInfo
- Publication number
- JPS55117266A JPS55117266A JP2149980A JP2149980A JPS55117266A JP S55117266 A JPS55117266 A JP S55117266A JP 2149980 A JP2149980 A JP 2149980A JP 2149980 A JP2149980 A JP 2149980A JP S55117266 A JPS55117266 A JP S55117266A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- circuit structure
- integrated
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1520379A | 1979-02-26 | 1979-02-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55117266A true JPS55117266A (en) | 1980-09-09 |
JPH0117264B2 JPH0117264B2 (ja) | 1989-03-29 |
Family
ID=21770084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2149980A Granted JPS55117266A (en) | 1979-02-26 | 1980-02-21 | Integrated circuit structure |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS55117266A (ja) |
DE (1) | DE3006442A1 (ja) |
FR (1) | FR2449973A1 (ja) |
IT (1) | IT1141377B (ja) |
SE (1) | SE444484B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5678157A (en) * | 1979-11-29 | 1981-06-26 | Toshiba Corp | Semiconductor device |
JPS59130459A (ja) * | 1983-01-17 | 1984-07-27 | Hitachi Ltd | 半導体メモリ集積回路装置 |
JPS6028262A (ja) * | 1983-07-26 | 1985-02-13 | Nec Corp | 半導体メモリセル |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3147951A1 (de) * | 1981-12-03 | 1983-06-16 | Siemens AG, 1000 Berlin und 8000 München | Statische speicherzelle |
EP0192093B1 (en) * | 1985-01-30 | 1990-06-13 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
US4805148A (en) * | 1985-11-22 | 1989-02-14 | Diehl Nagle Sherra E | High impendance-coupled CMOS SRAM for improved single event immunity |
US5239503A (en) * | 1992-06-17 | 1993-08-24 | Aptix Corporation | High voltage random-access memory cell incorporating level shifter |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1054714A (en) * | 1974-10-09 | 1979-05-15 | James A. Luisi | High speed memory cell |
-
1980
- 1980-02-15 SE SE8001225A patent/SE444484B/sv not_active IP Right Cessation
- 1980-02-21 JP JP2149980A patent/JPS55117266A/ja active Granted
- 1980-02-21 DE DE19803006442 patent/DE3006442A1/de active Granted
- 1980-02-22 IT IT20130/80A patent/IT1141377B/it active
- 1980-02-25 FR FR8004080A patent/FR2449973A1/fr active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5678157A (en) * | 1979-11-29 | 1981-06-26 | Toshiba Corp | Semiconductor device |
JPS6331106B2 (ja) * | 1979-11-29 | 1988-06-22 | Tokyo Shibaura Electric Co | |
JPS59130459A (ja) * | 1983-01-17 | 1984-07-27 | Hitachi Ltd | 半導体メモリ集積回路装置 |
JPH045271B2 (ja) * | 1983-01-17 | 1992-01-30 | ||
JPS6028262A (ja) * | 1983-07-26 | 1985-02-13 | Nec Corp | 半導体メモリセル |
Also Published As
Publication number | Publication date |
---|---|
SE444484B (sv) | 1986-04-14 |
IT1141377B (it) | 1986-10-01 |
IT8020130A0 (it) | 1980-02-22 |
FR2449973A1 (fr) | 1980-09-19 |
JPH0117264B2 (ja) | 1989-03-29 |
DE3006442C2 (ja) | 1990-06-07 |
SE8001225L (sv) | 1980-08-27 |
DE3006442A1 (de) | 1980-09-04 |
FR2449973B1 (ja) | 1984-10-19 |
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