SE433787B - Multipel transistor med gemensam emitter och sparata kollektorer - Google Patents

Multipel transistor med gemensam emitter och sparata kollektorer

Info

Publication number
SE433787B
SE433787B SE8304013A SE8304013A SE433787B SE 433787 B SE433787 B SE 433787B SE 8304013 A SE8304013 A SE 8304013A SE 8304013 A SE8304013 A SE 8304013A SE 433787 B SE433787 B SE 433787B
Authority
SE
Sweden
Prior art keywords
diffusion
layer
emitter
substrate
multiple transistor
Prior art date
Application number
SE8304013A
Other languages
English (en)
Swedish (sv)
Other versions
SE8304013D0 (sv
Inventor
K-H Eklund
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE8304013A priority Critical patent/SE433787B/sv
Publication of SE8304013D0 publication Critical patent/SE8304013D0/xx
Publication of SE433787B publication Critical patent/SE433787B/sv
Priority to EP84850181A priority patent/EP0132240B1/en
Priority to DE8484850181T priority patent/DE3464441D1/de
Priority to JP59145901A priority patent/JPS6038857A/ja

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/461—Inverted vertical BJTs

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
SE8304013A 1983-07-15 1983-07-15 Multipel transistor med gemensam emitter och sparata kollektorer SE433787B (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE8304013A SE433787B (sv) 1983-07-15 1983-07-15 Multipel transistor med gemensam emitter och sparata kollektorer
EP84850181A EP0132240B1 (en) 1983-07-15 1984-06-13 Multiple transistor
DE8484850181T DE3464441D1 (en) 1983-07-15 1984-06-13 Multiple transistor
JP59145901A JPS6038857A (ja) 1983-07-15 1984-07-13 多重トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8304013A SE433787B (sv) 1983-07-15 1983-07-15 Multipel transistor med gemensam emitter och sparata kollektorer

Publications (2)

Publication Number Publication Date
SE8304013D0 SE8304013D0 (sv) 1983-07-15
SE433787B true SE433787B (sv) 1984-06-12

Family

ID=20351991

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8304013A SE433787B (sv) 1983-07-15 1983-07-15 Multipel transistor med gemensam emitter och sparata kollektorer

Country Status (4)

Country Link
EP (1) EP0132240B1 (OSRAM)
JP (1) JPS6038857A (OSRAM)
DE (1) DE3464441D1 (OSRAM)
SE (1) SE433787B (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2845869B2 (ja) * 1985-03-25 1999-01-13 株式会社日立製作所 半導体集積回路装置
DE10139515C2 (de) * 2001-08-10 2003-07-31 Infineon Technologies Ag Bandabstandsschaltung

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3659675A (en) * 1969-06-30 1972-05-02 Transportation Specialists Inc Lubrication system and reservoir therefor
US3760239A (en) * 1971-06-09 1973-09-18 Cress S Coaxial inverted geometry transistor having buried emitter
US3865648A (en) * 1972-01-07 1975-02-11 Ibm Method of making a common emitter transistor integrated circuit structure
DE2356301C3 (de) * 1973-11-10 1982-03-11 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte, logische Schaltung
CA1056513A (en) * 1975-06-19 1979-06-12 Benjamin J. Sloan (Jr.) Integrated logic circuit and method of fabrication
US4137109A (en) * 1976-04-12 1979-01-30 Texas Instruments Incorporated Selective diffusion and etching method for isolation of integrated logic circuit
US4228448A (en) * 1977-10-07 1980-10-14 Burr Brown Research Corp. Bipolar integrated semiconductor structure including I2 L and linear type devices and fabrication methods therefor
FR2482368A1 (fr) * 1980-05-12 1981-11-13 Thomson Csf Operateur logique a injection par le substrat et son procede de fabrication

Also Published As

Publication number Publication date
JPH0428148B2 (OSRAM) 1992-05-13
JPS6038857A (ja) 1985-02-28
SE8304013D0 (sv) 1983-07-15
EP0132240B1 (en) 1987-06-24
DE3464441D1 (en) 1987-07-30
EP0132240A1 (en) 1985-01-23

Similar Documents

Publication Publication Date Title
US4038680A (en) Semiconductor integrated circuit device
US5432376A (en) Semiconductor devices containing power and control transistors
US4228448A (en) Bipolar integrated semiconductor structure including I2 L and linear type devices and fabrication methods therefor
US3770519A (en) Isolation diffusion method for making reduced beta transistor or diodes
FI71039C (fi) Diod foer monolitintegrerad krets
US6815799B2 (en) Semiconductor integrated circuit device
SE433787B (sv) Multipel transistor med gemensam emitter och sparata kollektorer
US5119161A (en) Semiconductor device comprising a control circuit and a power stage with a vertical current flow, integrated in monolithic form on a single chip
US4125853A (en) Integrated circuit transistor
US5246871A (en) Method of manufacturing a semiconductor device comprising a control circuit and a power stage with a vertical current flow, integrated in monolithic form on a single chip
JPH09260715A (ja) ホトダイオード内蔵半導体集積回路
US4197147A (en) Method of manufacturing an integrated circuit including an analog circuit and an I2 L circuit utilizing staged diffusion techniques
US5597742A (en) Semiconductor device and method
JPH04271172A (ja) 光半導体装置
US4097888A (en) High density collector-up structure
JPH0425706B2 (OSRAM)
JP2003224252A (ja) 光半導体集積回路装置
JP3553715B2 (ja) 光半導体装置
US8319315B2 (en) Bipolar junction transistor devices
JPH04267561A (ja) 光半導体装置
EP0352516A2 (en) Integrated power transistor comprising means for reducing thermal stresses
JPS6140140B2 (OSRAM)
JPS63128742A (ja) 半導体注入集積論理回路装置
JPH0629374A (ja) 半導体集積回路装置
JPH02216873A (ja) 半導体装置

Legal Events

Date Code Title Description
NAL Patent in force

Ref document number: 8304013-9

Format of ref document f/p: F

NUG Patent has lapsed