SE415415B - Minnes-fet - Google Patents

Minnes-fet

Info

Publication number
SE415415B
SE415415B SE7510484A SE7510484A SE415415B SE 415415 B SE415415 B SE 415415B SE 7510484 A SE7510484 A SE 7510484A SE 7510484 A SE7510484 A SE 7510484A SE 415415 B SE415415 B SE 415415B
Authority
SE
Sweden
Prior art keywords
memory fet
fet
memory
Prior art date
Application number
SE7510484A
Other languages
English (en)
Swedish (sv)
Other versions
SE7510484L (sv
Inventor
B Rossler
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19742445091 external-priority patent/DE2445091A1/de
Priority claimed from DE19752505824 external-priority patent/DE2505824C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE7510484L publication Critical patent/SE7510484L/xx
Publication of SE415415B publication Critical patent/SE415415B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Volatile Memory (AREA)
SE7510484A 1974-09-20 1975-09-18 Minnes-fet SE415415B (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19742445091 DE2445091A1 (de) 1974-09-20 1974-09-20 Speicher-fet mit isoliertem, floatendem speichergate
DE19752505824 DE2505824C3 (de) 1975-02-12 1975-02-12 n-Kanal-Speicher-FET

Publications (2)

Publication Number Publication Date
SE7510484L SE7510484L (sv) 1976-05-17
SE415415B true SE415415B (sv) 1980-09-29

Family

ID=25767730

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7510484A SE415415B (sv) 1974-09-20 1975-09-18 Minnes-fet

Country Status (9)

Country Link
JP (1) JPS5157292A (nl)
BE (1) BE833631A (nl)
CH (1) CH601895A5 (nl)
DK (1) DK422975A (nl)
FR (1) FR2295523A1 (nl)
GB (1) GB1517925A (nl)
IT (1) IT1042648B (nl)
NL (1) NL7510943A (nl)
SE (1) SE415415B (nl)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4115914A (en) * 1976-03-26 1978-09-26 Hughes Aircraft Company Electrically erasable non-volatile semiconductor memory
JPS55105374A (en) * 1979-02-07 1980-08-12 Nec Corp Nonvolatile semiconductor memory
SE8301228L (sv) * 1982-03-09 1984-08-19 Rca Corp Halvledarminne med frisvevande styre
IT1201834B (it) * 1986-07-10 1989-02-02 Sgs Microelettronica Spa Dispositivo di memoria non volatile a semiconduttore

Also Published As

Publication number Publication date
SE7510484L (sv) 1976-05-17
GB1517925A (en) 1978-07-19
JPS5157292A (ja) 1976-05-19
NL7510943A (nl) 1976-03-23
IT1042648B (it) 1980-01-30
BE833631A (fr) 1976-03-19
CH601895A5 (nl) 1978-07-14
FR2295523B1 (nl) 1981-10-09
FR2295523A1 (fr) 1976-07-16
DK422975A (da) 1976-03-21

Similar Documents

Publication Publication Date Title
DK492775A (da) Cyclonseparator
IT1043638B (it) Memoria perfezionata
SE406136B (sv) Mis-felteffekttransistordon
AT365000B (de) N-kanal-speicher-fet
ATA557575A (de) Handmuhle
JPS5157291A (ja) Furootozoontoshitekeiseisareta zetsuengeetoojusuru fet
TR20060A (tr) Herbisit madde
JPS5110128A (ja) Yojukinzokuhaishutsuyonozuruno hoonyojudokanetsusochi
SE415415B (sv) Minnes-fet
JPS5113491A (ja) Kensakuban
AT342532B (de) Sparkerze
JPS5112408A (ja) Hoosutsukiekitaiyoki
JPS5153854A (ja) Sekisaijuryokenchisochi o jusuru toratsukusonota unpansha
JPS5110467A (ja) Kendakuekizoryubunrisochi
JPS51105697A (ja) Uoomuhagurumasetsusakuyohobu
JPS5111315A (ja) Kanshisochi
JPS511109A (ja) Deetahenkanhoshiki
BE832915A (fr) Memoire-tampon
SU522523A1 (ru) Запоминающее устройство
JPS5111201A (ja) Honpu
JPS5113733A (ja) Shitsufuenkisoseibutsuno seizohoho
DK480675A (da) 1-aryloxy-4-amino-2-butanoler
JPS511305A (ja) Funikigasuhatsuseisochi
SU491999A1 (ru) Запоминающее устройство
SU488255A1 (ru) Запоминающее устройство

Legal Events

Date Code Title Description
NAL Patent in force

Ref document number: 7510484-4

Format of ref document f/p: F

NUG Patent has lapsed

Ref document number: 7510484-4

Format of ref document f/p: F