IT1042648B - Transsistore a fefetto di campo memorizzatore con gate di memorizzazione isolato e flottante - Google Patents
Transsistore a fefetto di campo memorizzatore con gate di memorizzazione isolato e flottanteInfo
- Publication number
- IT1042648B IT1042648B IT2736275A IT2736275A IT1042648B IT 1042648 B IT1042648 B IT 1042648B IT 2736275 A IT2736275 A IT 2736275A IT 2736275 A IT2736275 A IT 2736275A IT 1042648 B IT1042648 B IT 1042648B
- Authority
- IT
- Italy
- Prior art keywords
- storage
- transsistor
- isolated
- floating
- field
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19742445091 DE2445091A1 (de) | 1974-09-20 | 1974-09-20 | Speicher-fet mit isoliertem, floatendem speichergate |
DE19752505824 DE2505824C3 (de) | 1975-02-12 | 1975-02-12 | n-Kanal-Speicher-FET |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1042648B true IT1042648B (it) | 1980-01-30 |
Family
ID=25767730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT2736275A IT1042648B (it) | 1974-09-20 | 1975-09-18 | Transsistore a fefetto di campo memorizzatore con gate di memorizzazione isolato e flottante |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS5157292A (it) |
BE (1) | BE833631A (it) |
CH (1) | CH601895A5 (it) |
DK (1) | DK422975A (it) |
FR (1) | FR2295523A1 (it) |
GB (1) | GB1517925A (it) |
IT (1) | IT1042648B (it) |
NL (1) | NL7510943A (it) |
SE (1) | SE415415B (it) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4115914A (en) * | 1976-03-26 | 1978-09-26 | Hughes Aircraft Company | Electrically erasable non-volatile semiconductor memory |
JPS55105374A (en) * | 1979-02-07 | 1980-08-12 | Nec Corp | Nonvolatile semiconductor memory |
SE8301228L (sv) * | 1982-03-09 | 1984-08-19 | Rca Corp | Halvledarminne med frisvevande styre |
IT1201834B (it) * | 1986-07-10 | 1989-02-02 | Sgs Microelettronica Spa | Dispositivo di memoria non volatile a semiconduttore |
-
1975
- 1975-09-09 GB GB3697975A patent/GB1517925A/en not_active Expired
- 1975-09-16 FR FR7528366A patent/FR2295523A1/fr active Granted
- 1975-09-16 CH CH1197875A patent/CH601895A5/xx not_active IP Right Cessation
- 1975-09-17 NL NL7510943A patent/NL7510943A/xx unknown
- 1975-09-18 IT IT2736275A patent/IT1042648B/it active
- 1975-09-18 SE SE7510484A patent/SE415415B/xx not_active IP Right Cessation
- 1975-09-19 BE BE160216A patent/BE833631A/xx not_active IP Right Cessation
- 1975-09-19 JP JP11352475A patent/JPS5157292A/ja active Pending
- 1975-09-19 DK DK422975A patent/DK422975A/da unknown
Also Published As
Publication number | Publication date |
---|---|
SE7510484L (sv) | 1976-05-17 |
GB1517925A (en) | 1978-07-19 |
JPS5157292A (ja) | 1976-05-19 |
NL7510943A (nl) | 1976-03-23 |
BE833631A (fr) | 1976-03-19 |
CH601895A5 (it) | 1978-07-14 |
SE415415B (sv) | 1980-09-29 |
FR2295523B1 (it) | 1981-10-09 |
FR2295523A1 (fr) | 1976-07-16 |
DK422975A (da) | 1976-03-21 |
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