IT1042858B - Elemento di memorizzazione statica e procedimento per la sua fabbricazione - Google Patents
Elemento di memorizzazione statica e procedimento per la sua fabbricazioneInfo
- Publication number
- IT1042858B IT1042858B IT27632/75A IT2763275A IT1042858B IT 1042858 B IT1042858 B IT 1042858B IT 27632/75 A IT27632/75 A IT 27632/75A IT 2763275 A IT2763275 A IT 2763275A IT 1042858 B IT1042858 B IT 1042858B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- manufacture
- storage element
- static storage
- static
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 230000003068 static effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19742446088 DE2446088A1 (de) | 1974-09-26 | 1974-09-26 | Statisches speicherelement und verfahren zu seiner herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1042858B true IT1042858B (it) | 1980-01-30 |
Family
ID=5926849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT27632/75A IT1042858B (it) | 1974-09-26 | 1975-09-25 | Elemento di memorizzazione statica e procedimento per la sua fabbricazione |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4027320A (it) |
| JP (1) | JPS5160472A (it) |
| BE (1) | BE833890A (it) |
| DE (1) | DE2446088A1 (it) |
| FR (1) | FR2286469A1 (it) |
| GB (1) | GB1511057A (it) |
| IT (1) | IT1042858B (it) |
| NL (1) | NL7511308A (it) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4143393A (en) * | 1977-06-21 | 1979-03-06 | International Business Machines Corporation | High field capacitor structure employing a carrier trapping region |
| EP0002420A1 (fr) * | 1977-12-01 | 1979-06-13 | International Business Machines Corporation | Dispositif semi-conducteur du type transistor à effet de champ activé par la lumière et mémoire en résultant |
| US4197144A (en) * | 1978-09-21 | 1980-04-08 | General Electric Company | Method for improving writing of information in memory targets |
| JPS59145576A (ja) * | 1982-11-09 | 1984-08-21 | ザイトレツクス・コ−ポレ−シヨン | プログラム可能なｍｏｓトランジスタ |
| JP4105353B2 (ja) * | 1999-07-26 | 2008-06-25 | 財団法人国際科学振興財団 | 半導体装置 |
| JP4397491B2 (ja) * | 1999-11-30 | 2010-01-13 | 財団法人国際科学振興財団 | １１１面方位を表面に有するシリコンを用いた半導体装置およびその形成方法 |
| WO2003003473A1 (en) * | 2001-06-28 | 2003-01-09 | Hitachi, Ltd. | Nonvolatile semiconductor memory cell and semiconductor memory and method for fabricating nonvolatile semiconductor memory |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3852120A (en) * | 1973-05-29 | 1974-12-03 | Ibm | Method for manufacturing ion implanted insulated gate field effect semiconductor transistor devices |
| US3922708A (en) * | 1974-03-04 | 1975-11-25 | Ibm | Method of producing high value ion implanted resistors |
-
1974
- 1974-09-26 DE DE19742446088 patent/DE2446088A1/de active Pending
-
1975
- 1975-08-29 GB GB35660/75A patent/GB1511057A/en not_active Expired
- 1975-09-24 FR FR7529249A patent/FR2286469A1/fr not_active Withdrawn
- 1975-09-25 NL NL7511308A patent/NL7511308A/xx unknown
- 1975-09-25 JP JP50115928A patent/JPS5160472A/ja active Pending
- 1975-09-25 IT IT27632/75A patent/IT1042858B/it active
- 1975-09-25 US US05/616,585 patent/US4027320A/en not_active Expired - Lifetime
- 1975-09-26 BE BE160434A patent/BE833890A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5160472A (it) | 1976-05-26 |
| US4027320A (en) | 1977-05-31 |
| GB1511057A (en) | 1978-05-17 |
| NL7511308A (nl) | 1976-03-30 |
| FR2286469A1 (fr) | 1976-04-23 |
| BE833890A (fr) | 1976-01-16 |
| DE2446088A1 (de) | 1976-04-01 |
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