JPS5160472A - - Google Patents

Info

Publication number
JPS5160472A
JPS5160472A JP50115928A JP11592875A JPS5160472A JP S5160472 A JPS5160472 A JP S5160472A JP 50115928 A JP50115928 A JP 50115928A JP 11592875 A JP11592875 A JP 11592875A JP S5160472 A JPS5160472 A JP S5160472A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50115928A
Inventor
Yakobusu Eruin
Doruda Geruharuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5160472A publication Critical patent/JPS5160472A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Volatile Memory (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
JP50115928A 1974-09-26 1975-09-25 Pending JPS5160472A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742446088 DE2446088A1 (de) 1974-09-26 1974-09-26 Statisches speicherelement und verfahren zu seiner herstellung

Publications (1)

Publication Number Publication Date
JPS5160472A true JPS5160472A (ja) 1976-05-26

Family

ID=5926849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50115928A Pending JPS5160472A (ja) 1974-09-26 1975-09-25

Country Status (8)

Country Link
US (1) US4027320A (ja)
JP (1) JPS5160472A (ja)
BE (1) BE833890A (ja)
DE (1) DE2446088A1 (ja)
FR (1) FR2286469A1 (ja)
GB (1) GB1511057A (ja)
IT (1) IT1042858B (ja)
NL (1) NL7511308A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5477038A (en) * 1977-12-01 1979-06-20 Ibm Optical active memory

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4143393A (en) * 1977-06-21 1979-03-06 International Business Machines Corporation High field capacitor structure employing a carrier trapping region
US4197144A (en) * 1978-09-21 1980-04-08 General Electric Company Method for improving writing of information in memory targets
JPS59145576A (ja) * 1982-11-09 1984-08-21 ザイトレツクス・コ−ポレ−シヨン プログラム可能なｍｏｓトランジスタ
JP4105353B2 (ja) * 1999-07-26 2008-06-25 財団法人国際科学振興財団 半導体装置
JP4397491B2 (ja) * 1999-11-30 2010-01-13 財団法人国際科学振興財団 １１１面方位を表面に有するシリコンを用いた半導体装置およびその形成方法
JPWO2003003473A1 (ja) * 2001-06-28 2004-10-21 株式会社日立製作所 不揮発性半導体記憶素子及び半導体記憶装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852120A (en) * 1973-05-29 1974-12-03 Ibm Method for manufacturing ion implanted insulated gate field effect semiconductor transistor devices
US3922708A (en) * 1974-03-04 1975-11-25 Ibm Method of producing high value ion implanted resistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5477038A (en) * 1977-12-01 1979-06-20 Ibm Optical active memory

Also Published As

Publication number Publication date
NL7511308A (nl) 1976-03-30
GB1511057A (en) 1978-05-17
US4027320A (en) 1977-05-31
DE2446088A1 (de) 1976-04-01
FR2286469A1 (fr) 1976-04-23
BE833890A (fr) 1976-01-16
IT1042858B (it) 1980-01-30

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