BE833890A - Element de memoire statique et procede pour sa fabrication - Google Patents
Element de memoire statique et procede pour sa fabricationInfo
- Publication number
- BE833890A BE833890A BE160434A BE160434A BE833890A BE 833890 A BE833890 A BE 833890A BE 160434 A BE160434 A BE 160434A BE 160434 A BE160434 A BE 160434A BE 833890 A BE833890 A BE 833890A
- Authority
- BE
- Belgium
- Prior art keywords
- manufacturing
- memory element
- static memory
- static
- memory
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 230000003068 static effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Non-Volatile Memory (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19742446088 DE2446088A1 (de) | 1974-09-26 | 1974-09-26 | Statisches speicherelement und verfahren zu seiner herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE833890A true BE833890A (fr) | 1976-01-16 |
Family
ID=5926849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE160434A BE833890A (fr) | 1974-09-26 | 1975-09-26 | Element de memoire statique et procede pour sa fabrication |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4027320A (fr) |
| JP (1) | JPS5160472A (fr) |
| BE (1) | BE833890A (fr) |
| DE (1) | DE2446088A1 (fr) |
| FR (1) | FR2286469A1 (fr) |
| GB (1) | GB1511057A (fr) |
| IT (1) | IT1042858B (fr) |
| NL (1) | NL7511308A (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4143393A (en) * | 1977-06-21 | 1979-03-06 | International Business Machines Corporation | High field capacitor structure employing a carrier trapping region |
| EP0002420A1 (fr) * | 1977-12-01 | 1979-06-13 | International Business Machines Corporation | Dispositif semi-conducteur du type transistor à effet de champ activé par la lumière et mémoire en résultant |
| US4197144A (en) * | 1978-09-21 | 1980-04-08 | General Electric Company | Method for improving writing of information in memory targets |
| EP0108650A3 (fr) * | 1982-11-09 | 1986-02-12 | Zytrex Corporation | Transistor MOS programmable |
| JP4105353B2 (ja) * | 1999-07-26 | 2008-06-25 | 財団法人国際科学振興財団 | 半導体装置 |
| JP4397491B2 (ja) * | 1999-11-30 | 2010-01-13 | 財団法人国際科学振興財団 | １１１面方位を表面に有するシリコンを用いた半導体装置およびその形成方法 |
| WO2003003473A1 (fr) * | 2001-06-28 | 2003-01-09 | Hitachi, Ltd. | Cellule memoire a semi-conducteurs non volatile, memoire a semi-conducteurs et procede pour produire une memoire a semi-conducteurs non volatile |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3852120A (en) * | 1973-05-29 | 1974-12-03 | Ibm | Method for manufacturing ion implanted insulated gate field effect semiconductor transistor devices |
| US3922708A (en) * | 1974-03-04 | 1975-11-25 | Ibm | Method of producing high value ion implanted resistors |
-
1974
- 1974-09-26 DE DE19742446088 patent/DE2446088A1/de active Pending
-
1975
- 1975-08-29 GB GB35660/75A patent/GB1511057A/en not_active Expired
- 1975-09-24 FR FR7529249A patent/FR2286469A1/fr not_active Withdrawn
- 1975-09-25 JP JP50115928A patent/JPS5160472A/ja active Pending
- 1975-09-25 NL NL7511308A patent/NL7511308A/xx unknown
- 1975-09-25 US US05/616,585 patent/US4027320A/en not_active Expired - Lifetime
- 1975-09-25 IT IT27632/75A patent/IT1042858B/it active
- 1975-09-26 BE BE160434A patent/BE833890A/fr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2286469A1 (fr) | 1976-04-23 |
| GB1511057A (en) | 1978-05-17 |
| NL7511308A (nl) | 1976-03-30 |
| US4027320A (en) | 1977-05-31 |
| IT1042858B (it) | 1980-01-30 |
| DE2446088A1 (de) | 1976-04-01 |
| JPS5160472A (fr) | 1976-05-26 |
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