JPS5157291A - Furootozoontoshitekeiseisareta zetsuengeetoojusuru fet - Google Patents

Furootozoontoshitekeiseisareta zetsuengeetoojusuru fet

Info

Publication number
JPS5157291A
JPS5157291A JP11352375A JP11352375A JPS5157291A JP S5157291 A JPS5157291 A JP S5157291A JP 11352375 A JP11352375 A JP 11352375A JP 11352375 A JP11352375 A JP 11352375A JP S5157291 A JPS5157291 A JP S5157291A
Authority
JP
Japan
Prior art keywords
zetsuengeetoojusuru
furootozoontoshitekeiseisareta
fet
zetsuengeetoojusuru fet
furootozoontoshitekeiseisareta zetsuengeetoojusuru
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11352375A
Other languages
English (en)
Other versions
JPS5528554B2 (ja
Inventor
Retsusureru Berunbaruto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2445079A external-priority patent/DE2445079C3/de
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5157291A publication Critical patent/JPS5157291A/ja
Publication of JPS5528554B2 publication Critical patent/JPS5528554B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
JP11352375A 1974-09-20 1975-09-19 Furootozoontoshitekeiseisareta zetsuengeetoojusuru fet Granted JPS5157291A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2445079A DE2445079C3 (de) 1974-09-20 1974-09-20 Speicher-Feldeffekttransistor

Publications (2)

Publication Number Publication Date
JPS5157291A true JPS5157291A (ja) 1976-05-19
JPS5528554B2 JPS5528554B2 (ja) 1980-07-29

Family

ID=5926358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11352375A Granted JPS5157291A (ja) 1974-09-20 1975-09-19 Furootozoontoshitekeiseisareta zetsuengeetoojusuru fet

Country Status (10)

Country Link
JP (1) JPS5157291A (ja)
AT (1) AT376845B (ja)
BE (1) BE833632A (ja)
CH (1) CH591763A5 (ja)
DK (1) DK141545C (ja)
FR (1) FR2285719A1 (ja)
GB (1) GB1483555A (ja)
IT (1) IT1042654B (ja)
NL (1) NL163373C (ja)
SE (1) SE402186B (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857750A (ja) * 1981-10-01 1983-04-06 Seiko Instr & Electronics Ltd 不揮発性半導体メモリ
JPS5887877A (ja) * 1981-11-19 1983-05-25 Sanyo Electric Co Ltd 半導体不揮発性メモリ
JPH06252392A (ja) * 1993-03-01 1994-09-09 Nec Corp 電界効果トランジスタ
JP2016006894A (ja) * 2015-08-03 2016-01-14 スパンション エルエルシー 半導体装置およびその製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826846Y2 (ja) * 1978-10-26 1983-06-10 三菱自動車工業株式会社 シ−トベルト支持部材のガイド取付構造
KR0149571B1 (ko) * 1995-05-04 1998-10-01 김주용 반도체 소자의 트랜지스터 구조

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1071383A (en) * 1963-06-24 1967-06-07 Hitachi Ltd Field-effect semiconductor devices
US3745426A (en) * 1970-06-01 1973-07-10 Rca Corp Insulated gate field-effect transistor with variable gain
US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
NL7212151A (ja) * 1972-09-07 1974-03-11

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857750A (ja) * 1981-10-01 1983-04-06 Seiko Instr & Electronics Ltd 不揮発性半導体メモリ
JPS5887877A (ja) * 1981-11-19 1983-05-25 Sanyo Electric Co Ltd 半導体不揮発性メモリ
JPH06252392A (ja) * 1993-03-01 1994-09-09 Nec Corp 電界効果トランジスタ
JP2016006894A (ja) * 2015-08-03 2016-01-14 スパンション エルエルシー 半導体装置およびその製造方法

Also Published As

Publication number Publication date
ATA629275A (de) 1984-05-15
BE833632A (fr) 1976-03-19
CH591763A5 (ja) 1977-09-30
JPS5528554B2 (ja) 1980-07-29
IT1042654B (it) 1980-01-30
DK141545C (da) 1980-09-29
FR2285719A1 (fr) 1976-04-16
DK423275A (da) 1976-03-21
SE402186B (sv) 1978-06-19
FR2285719B1 (ja) 1979-03-23
DK141545B (da) 1980-04-14
AT376845B (de) 1985-01-10
NL7510942A (nl) 1976-03-23
NL163373C (nl) 1980-08-15
GB1483555A (en) 1977-08-24
SE7510483L (sv) 1976-03-21

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