SE377223B - - Google Patents
Info
- Publication number
- SE377223B SE377223B SE7203647A SE364772A SE377223B SE 377223 B SE377223 B SE 377223B SE 7203647 A SE7203647 A SE 7203647A SE 364772 A SE364772 A SE 364772A SE 377223 B SE377223 B SE 377223B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/1124—Devices with PN homojunction gate
- H01L31/1126—Devices with PN homojunction gate the device being a field-effect phototransistor
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12759671A | 1971-03-24 | 1971-03-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE377223B true SE377223B (xx) | 1975-06-23 |
Family
ID=22430924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7203647A SE377223B (xx) | 1971-03-24 | 1972-03-21 |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US3721839A (xx) |
| JP (1) | JPS5318127B1 (xx) |
| AT (1) | AT330264B (xx) |
| AU (1) | AU463449B2 (xx) |
| BE (1) | BE781164A (xx) |
| BR (1) | BR7201747D0 (xx) |
| CA (1) | CA951005A (xx) |
| CH (1) | CH549321A (xx) |
| DE (1) | DE2213765C3 (xx) |
| ES (1) | ES401057A1 (xx) |
| FR (1) | FR2130669B1 (xx) |
| GB (1) | GB1391934A (xx) |
| IT (1) | IT954512B (xx) |
| NL (1) | NL7203662A (xx) |
| SE (1) | SE377223B (xx) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3805062A (en) * | 1972-06-21 | 1974-04-16 | Gen Electric | Method and apparatus for sensing radiation and providing electrical readout |
| GB1444541A (en) * | 1972-09-22 | 1976-08-04 | Mullard Ltd | Radiation sensitive solid state devices |
| DE2345686A1 (de) * | 1972-09-22 | 1974-04-04 | Philips Nv | Bildwiedergabe- und/oder -umwandlungsvorrichtung |
| DE2345679A1 (de) * | 1972-09-22 | 1974-04-04 | Philips Nv | Halbleiterkaltkathode |
| NL7212912A (xx) * | 1972-09-23 | 1974-03-26 | ||
| GB1457253A (en) * | 1972-12-01 | 1976-12-01 | Mullard Ltd | Semiconductor charge transfer devices |
| US3919569A (en) * | 1972-12-29 | 1975-11-11 | Ibm | Dynamic two device memory cell which provides D.C. sense signals |
| US3801820A (en) * | 1973-02-09 | 1974-04-02 | Gen Electric | Method and apparatus for sensing radiation and providing electrical readout |
| US3795806A (en) * | 1973-03-02 | 1974-03-05 | Gen Electric | Method and apparatus for sensing radiation and providing electrical readout |
| NL7308240A (xx) * | 1973-06-14 | 1974-12-17 | ||
| GB1444951A (en) * | 1973-06-18 | 1976-08-04 | Mullard Ltd | Electronic solid state devices |
| DE2404237C3 (de) * | 1974-01-30 | 1980-04-17 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Integriertes Halbleiterbauelement zum zellenförmigen Abtasten eines Bildes |
| US3919555A (en) * | 1974-10-17 | 1975-11-11 | Philips Corp | Direct view infra-red to visible light converter |
| US4107724A (en) * | 1974-12-17 | 1978-08-15 | U.S. Philips Corporation | Surface controlled field effect solid state device |
| US3988619A (en) * | 1974-12-27 | 1976-10-26 | International Business Machines Corporation | Random access solid-state image sensor with non-destructive read-out |
| JPS5466080A (en) * | 1977-11-05 | 1979-05-28 | Nippon Gakki Seizo Kk | Semiconductor device |
| US4237473A (en) * | 1978-12-22 | 1980-12-02 | Honeywell Inc. | Gallium phosphide JFET |
| JPS58220574A (ja) * | 1982-06-17 | 1983-12-22 | Olympus Optical Co Ltd | 固体撮像装置 |
| JPS59107578A (ja) * | 1982-12-11 | 1984-06-21 | Junichi Nishizawa | 半導体光電変換装置 |
| JPS59108464A (ja) * | 1982-12-14 | 1984-06-22 | Olympus Optical Co Ltd | 固体撮像装置 |
| JPS6030282A (ja) * | 1983-07-28 | 1985-02-15 | Mitsubishi Electric Corp | 固体撮像装置 |
| JPH02146876A (ja) * | 1988-11-29 | 1990-06-06 | Toshiba Corp | 光センサの駆動方法 |
| US7009647B1 (en) * | 2000-04-24 | 2006-03-07 | Ess Technology, Inc. | CMOS imager having a JFET adapted to detect photons and produce an amplified electrical signal |
| JP4109858B2 (ja) * | 2001-11-13 | 2008-07-02 | 株式会社東芝 | 固体撮像装置 |
| US7592841B2 (en) | 2006-05-11 | 2009-09-22 | Dsm Solutions, Inc. | Circuit configurations having four terminal JFET devices |
| US7525163B2 (en) | 2006-10-31 | 2009-04-28 | Dsm Solutions, Inc. | Semiconductor device, design method and structure |
| US20080265936A1 (en) * | 2007-04-27 | 2008-10-30 | Dsm Solutions, Inc. | Integrated circuit switching device, structure and method of manufacture |
| US7629812B2 (en) | 2007-08-03 | 2009-12-08 | Dsm Solutions, Inc. | Switching circuits and methods for programmable logic devices |
| TWI587699B (zh) * | 2015-06-02 | 2017-06-11 | 國立中山大學 | 感光電路及其控制方法 |
| JP6567792B1 (ja) * | 2019-04-04 | 2019-08-28 | キヤノン電子管デバイス株式会社 | 放射線検出器 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3051840A (en) * | 1959-12-18 | 1962-08-28 | Ibm | Photosensitive field effect unit |
| US3373295A (en) * | 1965-04-27 | 1968-03-12 | Aerojet General Co | Memory element |
| US3448344A (en) * | 1966-03-15 | 1969-06-03 | Westinghouse Electric Corp | Mosaic of semiconductor elements interconnected in an xy matrix |
| US3390273A (en) * | 1966-08-08 | 1968-06-25 | Fairchild Camera Instr Co | Electronic shutter with gating and storage features |
| US3453507A (en) * | 1967-04-04 | 1969-07-01 | Honeywell Inc | Photo-detector |
| US3617823A (en) * | 1969-03-07 | 1971-11-02 | Rca Corp | Self-scanned phototransistor array employing common substrate |
-
1971
- 1971-03-24 US US00127596A patent/US3721839A/en not_active Expired - Lifetime
-
1972
- 1972-03-18 NL NL7203662A patent/NL7203662A/xx not_active Application Discontinuation
- 1972-03-21 IT IT67900/72A patent/IT954512B/it active
- 1972-03-21 CH CH420772A patent/CH549321A/xx not_active IP Right Cessation
- 1972-03-21 SE SE7203647A patent/SE377223B/xx unknown
- 1972-03-22 DE DE2213765A patent/DE2213765C3/de not_active Expired
- 1972-03-22 ES ES401057A patent/ES401057A1/es not_active Expired
- 1972-03-22 AU AU40253/72A patent/AU463449B2/en not_active Expired
- 1972-03-22 GB GB1341572A patent/GB1391934A/en not_active Expired
- 1972-03-23 AT AT250872A patent/AT330264B/de not_active IP Right Cessation
- 1972-03-23 BE BE781164A patent/BE781164A/xx unknown
- 1972-03-23 JP JP2860172A patent/JPS5318127B1/ja active Pending
- 1972-03-24 FR FR7210420A patent/FR2130669B1/fr not_active Expired
- 1972-03-24 BR BR721747A patent/BR7201747D0/pt unknown
- 1972-03-24 CA CA138,015,A patent/CA951005A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2213765B2 (de) | 1979-02-08 |
| DE2213765C3 (de) | 1979-10-04 |
| CH549321A (de) | 1974-05-15 |
| BE781164A (fr) | 1972-09-25 |
| US3721839A (en) | 1973-03-20 |
| ATA250872A (de) | 1975-09-15 |
| IT954512B (it) | 1973-09-15 |
| JPS5318127B1 (xx) | 1978-06-13 |
| FR2130669B1 (xx) | 1977-08-19 |
| NL7203662A (xx) | 1972-09-26 |
| ES401057A1 (es) | 1975-02-16 |
| GB1391934A (en) | 1975-04-23 |
| AT330264B (de) | 1976-06-25 |
| BR7201747D0 (pt) | 1973-06-07 |
| FR2130669A1 (xx) | 1972-11-03 |
| AU4025372A (en) | 1973-09-27 |
| AU463449B2 (en) | 1975-07-09 |
| DE2213765A1 (de) | 1972-09-28 |
| CA951005A (en) | 1974-07-09 |