SE367443B - - Google Patents

Info

Publication number
SE367443B
SE367443B SE12918/71A SE1291871A SE367443B SE 367443 B SE367443 B SE 367443B SE 12918/71 A SE12918/71 A SE 12918/71A SE 1291871 A SE1291871 A SE 1291871A SE 367443 B SE367443 B SE 367443B
Authority
SE
Sweden
Application number
SE12918/71A
Inventor
W Dietze
K Reuschel
H Sandmann
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE367443B publication Critical patent/SE367443B/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
SE12918/71A 1970-10-12 1971-10-12 SE367443B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2050076A DE2050076C3 (de) 1970-10-12 1970-10-12 Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
SE367443B true SE367443B (de) 1974-05-27

Family

ID=5784889

Family Applications (1)

Application Number Title Priority Date Filing Date
SE12918/71A SE367443B (de) 1970-10-12 1971-10-12

Country Status (12)

Country Link
US (1) US3746496A (de)
JP (1) JPS491393B1 (de)
BE (1) BE768301A (de)
CA (1) CA959382A (de)
CH (1) CH528301A (de)
CS (1) CS188118B2 (de)
DE (1) DE2050076C3 (de)
DK (1) DK133604C (de)
FR (1) FR2111084A5 (de)
GB (1) GB1347368A (de)
NL (1) NL7111264A (de)
SE (1) SE367443B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3950479A (en) * 1969-04-02 1976-04-13 Siemens Aktiengesellschaft Method of producing hollow semiconductor bodies
US4015922A (en) * 1970-12-09 1977-04-05 Siemens Aktiengesellschaft Apparatus for the manufacture of tubular bodies of semiconductor material
US3979490A (en) * 1970-12-09 1976-09-07 Siemens Aktiengesellschaft Method for the manufacture of tubular bodies of semiconductor material
US4034705A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
DE2322952C3 (de) * 1973-05-07 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von Horden für die Aufnahme von Kristallscheiben bei Diffusions- und Temperprozessen
DE2518853C3 (de) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas
JPS58177460U (ja) * 1982-05-19 1983-11-28 後藤　定三 カラ−錠前
JP2725081B2 (ja) * 1990-07-05 1998-03-09 富士通株式会社 半導体装置製造用熱処理装置
US6228297B1 (en) * 1998-05-05 2001-05-08 Rohm And Haas Company Method for producing free-standing silicon carbide articles
US9683286B2 (en) * 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
JP5309963B2 (ja) * 2007-12-28 2013-10-09 三菱マテリアル株式会社 多結晶シリコンのシリコン芯棒組立体及びその製造方法、多結晶シリコン製造装置、多結晶シリコン製造方法
US20110159214A1 (en) * 2008-03-26 2011-06-30 Gt Solar, Incorporated Gold-coated polysilicon reactor system and method
EP2271788A2 (de) * 2008-03-26 2011-01-12 GT Solar Incorporated Systeme und verfahren zur verteilung von gas in einem cvd-reaktor
WO2010008477A2 (en) * 2008-06-23 2010-01-21 Gt Solar Incorporated Chuck and bridge connection points for tube filaments in a chemical vapor deposition reactor
US10494714B2 (en) * 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
CN103158201B (zh) * 2011-12-09 2016-03-02 洛阳金诺机械工程有限公司 一种空心硅芯与实心硅芯的搭接方法
CN103158202B (zh) * 2011-12-09 2016-07-06 洛阳金诺机械工程有限公司 一种空心硅芯的搭接方法
CN103158200B (zh) * 2011-12-09 2016-07-06 洛阳金诺机械工程有限公司 一种c形硅芯的搭接方法
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
US10450649B2 (en) * 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
CN112867893A (zh) * 2018-10-01 2021-05-28 福罗威尔国际照明（控股）有限公司 线性led光源及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2955566A (en) * 1957-04-16 1960-10-11 Chilean Nitrate Sales Corp Dissociation-deposition unit for the production of chromium
NL124690C (de) * 1958-05-29
NL295321A (de) * 1958-12-09
GB944009A (en) * 1960-01-04 1963-12-11 Texas Instruments Ltd Improvements in or relating to the deposition of silicon on a tantalum article
DE1223804B (de) * 1961-01-26 1966-09-01 Siemens Ag Vorrichtung zur Gewinnung reinen Halbleitermaterials, wie Silicium

Also Published As

Publication number Publication date
NL7111264A (de) 1972-04-14
CH528301A (de) 1972-09-30
JPS491393B1 (de) 1974-01-12
FR2111084A5 (de) 1972-06-02
CA959382A (en) 1974-12-17
CS188118B2 (en) 1979-02-28
US3746496A (en) 1973-07-17
DE2050076C3 (de) 1980-06-26
DE2050076B2 (de) 1979-07-26
SU430532A3 (ru) 1974-05-30
BE768301A (fr) 1971-11-03
DK133604C (da) 1976-11-01
DE2050076A1 (de) 1972-04-13
GB1347368A (en) 1974-02-27
DK133604B (da) 1976-06-14

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