DK133604B - Apparat til fremstilling af rorformede legemer af halvledermateriale, fortrinsvis af silicium eller germanium - Google Patents

Apparat til fremstilling af rorformede legemer af halvledermateriale, fortrinsvis af silicium eller germanium

Info

Publication number
DK133604B
DK133604B DK492371AA DK492371A DK133604B DK 133604 B DK133604 B DK 133604B DK 492371A A DK492371A A DK 492371AA DK 492371 A DK492371 A DK 492371A DK 133604 B DK133604 B DK 133604B
Authority
DK
Denmark
Prior art keywords
preferredly
silicium
semiconductors
germanium
tubes
Prior art date
Application number
DK492371AA
Other languages
English (en)
Other versions
DK133604C (da
Inventor
W Dietze
K Reuschel
H Sandmann
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK133604B publication Critical patent/DK133604B/da
Application granted granted Critical
Publication of DK133604C publication Critical patent/DK133604C/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
DK492371A 1970-10-12 1971-10-11 Apparat til fremstilling af rorformede legemer af halvledermateriale fortrinsvis af silicium eller germanium DK133604C (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2050076A DE2050076C3 (de) 1970-10-12 1970-10-12 Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial

Publications (2)

Publication Number Publication Date
DK133604B true DK133604B (da) 1976-06-14
DK133604C DK133604C (da) 1976-11-01

Family

ID=5784889

Family Applications (1)

Application Number Title Priority Date Filing Date
DK492371A DK133604C (da) 1970-10-12 1971-10-11 Apparat til fremstilling af rorformede legemer af halvledermateriale fortrinsvis af silicium eller germanium

Country Status (12)

Country Link
US (1) US3746496A (da)
JP (1) JPS491393B1 (da)
BE (1) BE768301A (da)
CA (1) CA959382A (da)
CH (1) CH528301A (da)
CS (1) CS188118B2 (da)
DE (1) DE2050076C3 (da)
DK (1) DK133604C (da)
FR (1) FR2111084A5 (da)
GB (1) GB1347368A (da)
NL (1) NL7111264A (da)
SE (1) SE367443B (da)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3950479A (en) * 1969-04-02 1976-04-13 Siemens Aktiengesellschaft Method of producing hollow semiconductor bodies
US4015922A (en) * 1970-12-09 1977-04-05 Siemens Aktiengesellschaft Apparatus for the manufacture of tubular bodies of semiconductor material
US3979490A (en) * 1970-12-09 1976-09-07 Siemens Aktiengesellschaft Method for the manufacture of tubular bodies of semiconductor material
US4034705A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
DE2322952C3 (de) * 1973-05-07 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von Horden für die Aufnahme von Kristallscheiben bei Diffusions- und Temperprozessen
DE2518853C3 (de) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas
JPS58177460U (ja) * 1982-05-19 1983-11-28 後藤　定三 カラ−錠前
JP2725081B2 (ja) * 1990-07-05 1998-03-09 富士通株式会社 半導体装置製造用熱処理装置
US6228297B1 (en) * 1998-05-05 2001-05-08 Rohm And Haas Company Method for producing free-standing silicon carbide articles
US9683286B2 (en) * 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
JP5309963B2 (ja) * 2007-12-28 2013-10-09 三菱マテリアル株式会社 多結晶シリコンのシリコン芯棒組立体及びその製造方法、多結晶シリコン製造装置、多結晶シリコン製造方法
RU2499081C2 (ru) * 2008-03-26 2013-11-20 ДжиТиЭйТи Корпорейшн Системы и способы распределения газа в реакторе для химического осаждения из паровой фазы
CN101980959A (zh) * 2008-03-26 2011-02-23 Gt太阳能公司 涂覆金的多晶硅反应器系统和方法
CN102084028B (zh) * 2008-06-23 2014-04-16 Gt太阳能公司 在化学气相沉积反应器中用于管丝的夹头及电桥的连接点
US10494714B2 (en) * 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
CN103158201B (zh) * 2011-12-09 2016-03-02 洛阳金诺机械工程有限公司 一种空心硅芯与实心硅芯的搭接方法
CN103158200B (zh) * 2011-12-09 2016-07-06 洛阳金诺机械工程有限公司 一种c形硅芯的搭接方法
CN103158202B (zh) * 2011-12-09 2016-07-06 洛阳金诺机械工程有限公司 一种空心硅芯的搭接方法
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
US10450649B2 (en) * 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
EP3861253B1 (en) * 2018-10-01 2023-12-06 Flowil International Lighting (Holding) B.V. Linear led light source and manufacturing method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2955566A (en) * 1957-04-16 1960-10-11 Chilean Nitrate Sales Corp Dissociation-deposition unit for the production of chromium
NL238464A (da) * 1958-05-29
NL246189A (da) * 1958-12-09
GB944009A (en) * 1960-01-04 1963-12-11 Texas Instruments Ltd Improvements in or relating to the deposition of silicon on a tantalum article
DE1223804B (de) * 1961-01-26 1966-09-01 Siemens Ag Vorrichtung zur Gewinnung reinen Halbleitermaterials, wie Silicium

Also Published As

Publication number Publication date
CH528301A (de) 1972-09-30
NL7111264A (da) 1972-04-14
US3746496A (en) 1973-07-17
DE2050076B2 (de) 1979-07-26
BE768301A (fr) 1971-11-03
DE2050076A1 (de) 1972-04-13
SE367443B (da) 1974-05-27
CA959382A (en) 1974-12-17
SU430532A3 (ru) 1974-05-30
DE2050076C3 (de) 1980-06-26
DK133604C (da) 1976-11-01
FR2111084A5 (da) 1972-06-02
CS188118B2 (en) 1979-02-28
JPS491393B1 (da) 1974-01-12
GB1347368A (en) 1974-02-27

Similar Documents

Publication Publication Date Title
DK133604B (da) Apparat til fremstilling af rorformede legemer af halvledermateriale, fortrinsvis af silicium eller germanium
DK140447B (da) Apparat til kortlægning af tværsnitsdimensionerne for rørformede emner.
DK129339B (da) Analogifremgangsmåde til fremstilling af N-aminophenylamidiner.
DK145064C (da) Apparat til fremstilling af roerformede legemer af silicium
DK135455B (da) Fremgangsmåde til fremstilling af 7-halogen-7-desoxythiolincosaminider.
ES198894Y (es) Dispositivo de fijacion de laminas de revestimiento.
DK130422B (da) Fremgangsmåde til fremstilling af et antibiotikum betegnet WS-4545 eller acylderivater deraf.
DK134489B (da) Fremgangsmåde til fremstilling af alkyl-7-desoxy-7(S)-substituerede-alfa-thiolincosaminider.
DK112093B (da) Fremgangsmåde til fremstilling af dihydroanguidin eller acylderivater heraf.
DK130467B (da) Fremgangsmåde til fremstilling af erythromycylaminer.
DK128895B (da) Fremgangsmåde til fremstilling af pregnanderivater.
DK127977B (da) Fremgangsmåde til fremstilling af 6α-methyl-19-nor-pregnener.
DK129450B (da) Fremgangsmåde til ætinylering af 17-ketosteroider.
DK135425B (da) Analogifremgangsmåde til fremstilling af 2-imidazolidonderivater.
DK128205B (da) Fremgangsmåde til fremstilling af 1-aryloxy-2-propanoler.
DK133682B (da) Analogifremgangsmåde til fremstilling af 3alfa-hydroxy-5alfa-pregn-1-en-20-oner eller 3alfa-hydroxy-17beta-alkoxykarbonyl-5alfa-androst-1-ener.
DK129453B (da) Analogifremgangsmåde til fremstilling af 1-aminoisoquinoliner.
DK126323B (da) Fremgangsmåde til fremstilling af 3β-hydroxy-5α-cardenolider eller -bufadienolider.
DK126509B (da) Fremgangsmåde til fremstilling af zearalenon.
DK131786B (da) Fremgangsmåde til fremstilling af delta4-3-oxo-1alfa-methylsteroider.
DK125388B (da) Fremgangsmåde til fremstilling af phenylaminoethanolderivater.
DK129138B (da) Fremgangsmåde til fremstilling af tuberactinomycin-N.
DK137006B (da) Fremgangsmåde til fremstilling af 1-chlor-3-methyl-2-buten.
DK126340B (da) Fremgangsmåde til fremstilling af antibiotiket lincomycin.
DK127414B (da) Analogifremgangsmåde til fremstilling af phenylhydrazider.