SE359185B - - Google Patents
Info
- Publication number
- SE359185B SE359185B SE03073/71A SE307371A SE359185B SE 359185 B SE359185 B SE 359185B SE 03073/71 A SE03073/71 A SE 03073/71A SE 307371 A SE307371 A SE 307371A SE 359185 B SE359185 B SE 359185B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2109070A | 1970-03-19 | 1970-03-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
SE359185B true SE359185B (de) | 1973-08-20 |
Family
ID=21802289
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE03073/71A SE359185B (de) | 1970-03-19 | 1971-03-10 |
Country Status (8)
Country | Link |
---|---|
US (1) | US3638202A (de) |
JP (1) | JPS5116113B1 (de) |
BE (1) | BE764401A (de) |
DE (1) | DE2113306B2 (de) |
FR (1) | FR2083417B1 (de) |
GB (1) | GB1322990A (de) |
NL (1) | NL7103417A (de) |
SE (1) | SE359185B (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1487945A (en) * | 1974-11-20 | 1977-10-05 | Ibm | Semiconductor integrated circuit devices |
US4015159A (en) * | 1975-09-15 | 1977-03-29 | Bell Telephone Laboratories, Incorporated | Semiconductor integrated circuit transistor detector array for channel electron multiplier |
US4161662A (en) * | 1976-01-22 | 1979-07-17 | Motorola, Inc. | Standardized digital logic chip |
JPS60953B2 (ja) * | 1977-12-30 | 1985-01-11 | 富士通株式会社 | 半導体集積回路装置 |
US4475119A (en) * | 1981-04-14 | 1984-10-02 | Fairchild Camera & Instrument Corporation | Integrated circuit power transmission array |
JPS57205893A (en) * | 1981-06-10 | 1982-12-17 | Toshiba Corp | Signal propagating device |
JPH077825B2 (ja) * | 1981-08-13 | 1995-01-30 | 富士通株式会社 | ゲートアレイの製造方法 |
DE3313441A1 (de) * | 1983-04-13 | 1984-10-18 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterspeicher |
US4694403A (en) * | 1983-08-25 | 1987-09-15 | Nec Corporation | Equalized capacitance wiring method for LSI circuits |
US4688072A (en) * | 1984-06-29 | 1987-08-18 | Hughes Aircraft Company | Hierarchical configurable gate array |
JPH0614536B2 (ja) * | 1985-09-17 | 1994-02-23 | 株式会社東芝 | バイポ−ラ集積回路 |
US5185283A (en) * | 1987-10-22 | 1993-02-09 | Matsushita Electronics Corporation | Method of making master slice type integrated circuit device |
JP2874097B2 (ja) * | 1989-10-24 | 1999-03-24 | 富士通株式会社 | 半導体メモリ装置 |
US5287304A (en) * | 1990-12-31 | 1994-02-15 | Texas Instruments Incorporated | Memory cell circuit and array |
US5384730A (en) * | 1991-05-31 | 1995-01-24 | Thunderbird Technologies, Inc. | Coincident activation of pass transistors in a random access memory |
FR2690598B1 (fr) * | 1992-04-24 | 1994-06-03 | Sextant Avionique | Ordonnancement de troncons de lignes d'un reseau, notamment pour le calcul de diaphonies entre lignes d'un reseau electrique. |
EP0662235A1 (de) * | 1992-09-03 | 1995-07-12 | Thunderbird Technologies, Inc. | Koinzidierende aktivierung von passiertransistoren in einem direktzugriffspeicher |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL294168A (de) * | 1963-06-17 | |||
US3312871A (en) * | 1964-12-23 | 1967-04-04 | Ibm | Interconnection arrangement for integrated circuits |
US3447137A (en) * | 1965-05-13 | 1969-05-27 | Bunker Ramo | Digital memory apparatus |
US3365707A (en) * | 1967-06-23 | 1968-01-23 | Rca Corp | Lsi array and standard cells |
US3518635A (en) * | 1967-08-22 | 1970-06-30 | Bunker Ramo | Digital memory apparatus |
-
1970
- 1970-03-19 US US21090A patent/US3638202A/en not_active Expired - Lifetime
-
1971
- 1971-03-10 SE SE03073/71A patent/SE359185B/xx unknown
- 1971-03-15 NL NL7103417A patent/NL7103417A/xx unknown
- 1971-03-17 BE BE764401A patent/BE764401A/xx unknown
- 1971-03-18 FR FR717109608A patent/FR2083417B1/fr not_active Expired
- 1971-03-19 DE DE2113306A patent/DE2113306B2/de active Pending
- 1971-03-19 JP JP46015246A patent/JPS5116113B1/ja active Pending
- 1971-04-19 GB GB2402871*A patent/GB1322990A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5116113B1 (de) | 1976-05-21 |
BE764401A (fr) | 1971-08-16 |
GB1322990A (en) | 1973-07-11 |
NL7103417A (de) | 1971-09-21 |
DE2113306A1 (de) | 1971-10-14 |
DE2113306B2 (de) | 1975-11-06 |
US3638202A (en) | 1972-01-25 |
FR2083417B1 (de) | 1974-02-15 |
FR2083417A1 (de) | 1971-12-17 |