SE1651446A1 - Spin oscillator device and mutually synchronized spin oscillator device arrays - Google Patents

Spin oscillator device and mutually synchronized spin oscillator device arrays

Info

Publication number
SE1651446A1
SE1651446A1 SE1651446A SE1651446A SE1651446A1 SE 1651446 A1 SE1651446 A1 SE 1651446A1 SE 1651446 A SE1651446 A SE 1651446A SE 1651446 A SE1651446 A SE 1651446A SE 1651446 A1 SE1651446 A1 SE 1651446A1
Authority
SE
Sweden
Prior art keywords
oscillator device
spin
spin oscillator
mao
magnetic
Prior art date
Application number
SE1651446A
Other languages
English (en)
Other versions
SE540812C2 (sv
Inventor
Åkerman Johan
A Awad Ahmad
Dürrenfeld Philipp
Houshang Afshin
Dvornik Mykola
Original Assignee
Johan Aakerman Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Johan Aakerman Ab filed Critical Johan Aakerman Ab
Priority to SE1651446A priority Critical patent/SE540812C2/sv
Priority to US16/346,652 priority patent/US10879453B2/en
Priority to EP17868262.1A priority patent/EP3535843A4/en
Priority to JP2019545239A priority patent/JP7069190B2/ja
Priority to PCT/SE2017/051057 priority patent/WO2018084774A1/en
Priority to CN201780068307.7A priority patent/CN109906549A/zh
Publication of SE1651446A1 publication Critical patent/SE1651446A1/sv
Publication of SE540812C2 publication Critical patent/SE540812C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
SE1651446A 2016-11-02 2016-11-02 Spin oscillator device and mutually synchronized spin oscillator device arrays SE540812C2 (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE1651446A SE540812C2 (sv) 2016-11-02 2016-11-02 Spin oscillator device and mutually synchronized spin oscillator device arrays
US16/346,652 US10879453B2 (en) 2016-11-02 2017-10-27 Spin oscillator device and mutually synchronized spin oscillator device arrays
EP17868262.1A EP3535843A4 (en) 2016-11-02 2017-10-27 SPIN OSCILLATOR DEVICE AND SYNCHRONIZED SPIN OSCILLATOR DEVICE ARRAYS BETWEEN THEM
JP2019545239A JP7069190B2 (ja) 2016-11-02 2017-10-27 スピン発振器デバイスおよび相互同期スピン発振器デバイスアレイ
PCT/SE2017/051057 WO2018084774A1 (en) 2016-11-02 2017-10-27 Spin oscillator device and mutually synchronized spin oscillator device arrays
CN201780068307.7A CN109906549A (zh) 2016-11-02 2017-10-27 自旋振荡器装置和相互同步的自旋振荡器装置阵列

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE1651446A SE540812C2 (sv) 2016-11-02 2016-11-02 Spin oscillator device and mutually synchronized spin oscillator device arrays

Publications (2)

Publication Number Publication Date
SE1651446A1 true SE1651446A1 (sv) 2018-05-03
SE540812C2 SE540812C2 (sv) 2018-11-20

Family

ID=62077026

Family Applications (1)

Application Number Title Priority Date Filing Date
SE1651446A SE540812C2 (sv) 2016-11-02 2016-11-02 Spin oscillator device and mutually synchronized spin oscillator device arrays

Country Status (6)

Country Link
US (1) US10879453B2 (sv)
EP (1) EP3535843A4 (sv)
JP (1) JP7069190B2 (sv)
CN (1) CN109906549A (sv)
SE (1) SE540812C2 (sv)
WO (1) WO2018084774A1 (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10971677B2 (en) * 2018-12-27 2021-04-06 Academia Sinica Electrically controlled nanomagnet and spin orbit torque magnetic random access memory including the same
US11593636B1 (en) 2019-01-03 2023-02-28 Seagate Technology Llc Machine learning system utilizing magnetization susceptibility adjustments
CN110504354A (zh) * 2019-07-16 2019-11-26 电子科技大学 基于反铁磁性材料的纳米太赫兹波振荡器阵列及制备方法

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US7471491B2 (en) * 2004-03-30 2008-12-30 Kabushiki Kaisha Toshiba Magnetic sensor having a frequency filter coupled to an output of a magnetoresistance element
FR2892871B1 (fr) * 2005-11-02 2007-11-23 Commissariat Energie Atomique Oscillateur radio frequence a courant elelctrique polarise en spin
US8535952B2 (en) * 2006-02-25 2013-09-17 Avalanche Technology, Inc. Method for manufacturing non-volatile magnetic memory
FR2905793B1 (fr) * 2006-09-12 2008-10-17 Commissariat Energie Atomique Dispositif magnetique integre controle piezoelectriquement
US8063709B2 (en) * 2007-02-21 2011-11-22 Centre National De La Recherche Scientifique Spin-transfer torque oscillator
KR100862183B1 (ko) * 2007-06-29 2008-10-09 고려대학교 산학협력단 강자성 물질의 도메인 구조 및 다중 상태를 이용한 자기기억 소자
US8802451B2 (en) * 2008-02-29 2014-08-12 Avalanche Technology Inc. Method for manufacturing high density non-volatile magnetic memory
KR101616042B1 (ko) * 2009-07-23 2016-04-27 삼성전자주식회사 자구벽을 이용한 발진기 및 그 동작방법
KR101676809B1 (ko) * 2010-08-13 2016-11-16 삼성전자주식회사 발진기 및 그 동작방법
US9230626B2 (en) * 2012-08-06 2016-01-05 Cornell University Electrically gated three-terminal circuits and devices based on spin hall torque effects in magnetic nanostructures apparatus, methods and applications
CN103000803B (zh) * 2012-12-21 2015-04-15 清华大学 电学器件
US9577653B2 (en) * 2013-01-14 2017-02-21 Cornell University Quasi-linear spin torque nano-oscillators
US20140252439A1 (en) * 2013-03-08 2014-09-11 T3Memory, Inc. Mram having spin hall effect writing and method of making the same
WO2014142740A1 (en) * 2013-03-14 2014-09-18 Nanosc Ab Spin oscillator device
US9691458B2 (en) * 2013-10-18 2017-06-27 Cornell University Circuits and devices based on spin hall effect to apply a spin transfer torque with a component perpendicular to the plane of magnetic layers
SE538342C2 (sv) * 2014-04-09 2016-05-24 Nanosc Ab Spinnoscillator-anordning
CN106463610B (zh) * 2014-06-18 2020-07-03 英特尔公司 具有可调强度的耦合自旋霍尔纳米振荡器
CN107004440B (zh) * 2014-07-17 2021-04-16 康奈尔大学 基于用于有效自旋转移矩的增强自旋霍尔效应的电路和装置
JP2016066634A (ja) * 2014-09-22 2016-04-28 株式会社東芝 磁気論理素子、磁気論理回路、磁気メモリ
US9425738B2 (en) * 2014-11-13 2016-08-23 Regents Of The University Of Minnesota Spin current generation with nano-oscillator
US9830966B2 (en) * 2015-10-29 2017-11-28 Western Digital Technologies, Inc. Three terminal SOT memory cell with anomalous Hall effect
US10305026B2 (en) * 2015-11-19 2019-05-28 Samsung Electronics Co., Ltd. Cross-point architecture for spin-transfer torque magnetoresistive random access memory with spin orbit writing
US10790441B2 (en) * 2016-03-14 2020-09-29 Purdue Research Foundation Spin-transfer-torque synthetic anti-ferromagnetic switching device
US10333058B2 (en) * 2016-03-17 2019-06-25 Cornell University Nanosecond-timescale low-error switching of 3-terminal magnetic tunnel junction circuits through dynamic in-plane-field assisted spin-hall effect

Also Published As

Publication number Publication date
SE540812C2 (sv) 2018-11-20
WO2018084774A1 (en) 2018-05-11
EP3535843A4 (en) 2020-06-10
CN109906549A (zh) 2019-06-18
JP2020502821A (ja) 2020-01-23
US20190280191A1 (en) 2019-09-12
JP7069190B2 (ja) 2022-05-17
EP3535843A1 (en) 2019-09-11
US10879453B2 (en) 2020-12-29

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