SE540812C2 - Spin oscillator device and mutually synchronized spin oscillator device arrays - Google Patents
Spin oscillator device and mutually synchronized spin oscillator device arraysInfo
- Publication number
- SE540812C2 SE540812C2 SE1651446A SE1651446A SE540812C2 SE 540812 C2 SE540812 C2 SE 540812C2 SE 1651446 A SE1651446 A SE 1651446A SE 1651446 A SE1651446 A SE 1651446A SE 540812 C2 SE540812 C2 SE 540812C2
- Authority
- SE
- Sweden
- Prior art keywords
- spin
- spin oscillator
- ncs
- frequency
- magnetic
- Prior art date
Links
- 230000001360 synchronised effect Effects 0.000 title claims abstract description 18
- 238000003491 array Methods 0.000 title claims description 10
- 230000005291 magnetic effect Effects 0.000 claims abstract description 48
- 230000005355 Hall effect Effects 0.000 claims abstract description 10
- 230000005415 magnetization Effects 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims abstract 2
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 230000003993 interaction Effects 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims 2
- 230000005418 spin wave Effects 0.000 description 20
- 239000004020 conductor Substances 0.000 description 13
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 230000003068 static effect Effects 0.000 description 5
- 238000013016 damping Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000001902 propagating effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000001427 coherent effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 210000004556 brain Anatomy 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
- H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE1651446A SE540812C2 (sv) | 2016-11-02 | 2016-11-02 | Spin oscillator device and mutually synchronized spin oscillator device arrays |
| US16/346,652 US10879453B2 (en) | 2016-11-02 | 2017-10-27 | Spin oscillator device and mutually synchronized spin oscillator device arrays |
| JP2019545239A JP7069190B2 (ja) | 2016-11-02 | 2017-10-27 | スピン発振器デバイスおよび相互同期スピン発振器デバイスアレイ |
| EP17868262.1A EP3535843A4 (en) | 2016-11-02 | 2017-10-27 | SPIN OSCILLATOR DEVICE AND SYNCHRONIZED SPIN OSCILLATOR DEVICE ARRAYS BETWEEN THEM |
| PCT/SE2017/051057 WO2018084774A1 (en) | 2016-11-02 | 2017-10-27 | Spin oscillator device and mutually synchronized spin oscillator device arrays |
| CN201780068307.7A CN109906549A (zh) | 2016-11-02 | 2017-10-27 | 自旋振荡器装置和相互同步的自旋振荡器装置阵列 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE1651446A SE540812C2 (sv) | 2016-11-02 | 2016-11-02 | Spin oscillator device and mutually synchronized spin oscillator device arrays |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE1651446A1 SE1651446A1 (sv) | 2018-05-03 |
| SE540812C2 true SE540812C2 (sv) | 2018-11-20 |
Family
ID=62077026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE1651446A SE540812C2 (sv) | 2016-11-02 | 2016-11-02 | Spin oscillator device and mutually synchronized spin oscillator device arrays |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10879453B2 (sv) |
| EP (1) | EP3535843A4 (sv) |
| JP (1) | JP7069190B2 (sv) |
| CN (1) | CN109906549A (sv) |
| SE (1) | SE540812C2 (sv) |
| WO (1) | WO2018084774A1 (sv) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10971677B2 (en) * | 2018-12-27 | 2021-04-06 | Academia Sinica | Electrically controlled nanomagnet and spin orbit torque magnetic random access memory including the same |
| US11593636B1 (en) | 2019-01-03 | 2023-02-28 | Seagate Technology Llc | Machine learning system utilizing magnetization susceptibility adjustments |
| CN110504354A (zh) * | 2019-07-16 | 2019-11-26 | 电子科技大学 | 基于反铁磁性材料的纳米太赫兹波振荡器阵列及制备方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7471491B2 (en) * | 2004-03-30 | 2008-12-30 | Kabushiki Kaisha Toshiba | Magnetic sensor having a frequency filter coupled to an output of a magnetoresistance element |
| FR2892871B1 (fr) * | 2005-11-02 | 2007-11-23 | Commissariat Energie Atomique | Oscillateur radio frequence a courant elelctrique polarise en spin |
| US8535952B2 (en) * | 2006-02-25 | 2013-09-17 | Avalanche Technology, Inc. | Method for manufacturing non-volatile magnetic memory |
| FR2905793B1 (fr) * | 2006-09-12 | 2008-10-17 | Commissariat Energie Atomique | Dispositif magnetique integre controle piezoelectriquement |
| WO2008101545A1 (en) * | 2007-02-21 | 2008-08-28 | Commissariat A L'energie Atomique | Spin-transfer torque oscillator |
| KR100862183B1 (ko) * | 2007-06-29 | 2008-10-09 | 고려대학교 산학협력단 | 강자성 물질의 도메인 구조 및 다중 상태를 이용한 자기기억 소자 |
| US8802451B2 (en) * | 2008-02-29 | 2014-08-12 | Avalanche Technology Inc. | Method for manufacturing high density non-volatile magnetic memory |
| KR101616042B1 (ko) * | 2009-07-23 | 2016-04-27 | 삼성전자주식회사 | 자구벽을 이용한 발진기 및 그 동작방법 |
| KR101676809B1 (ko) * | 2010-08-13 | 2016-11-16 | 삼성전자주식회사 | 발진기 및 그 동작방법 |
| US9230626B2 (en) * | 2012-08-06 | 2016-01-05 | Cornell University | Electrically gated three-terminal circuits and devices based on spin hall torque effects in magnetic nanostructures apparatus, methods and applications |
| CN103000803B (zh) * | 2012-12-21 | 2015-04-15 | 清华大学 | 电学器件 |
| WO2014110603A1 (en) * | 2013-01-14 | 2014-07-17 | Cornell University | Quasi-linear spin torque nano-oscillators |
| US20140252439A1 (en) * | 2013-03-08 | 2014-09-11 | T3Memory, Inc. | Mram having spin hall effect writing and method of making the same |
| WO2014142740A1 (en) * | 2013-03-14 | 2014-09-18 | Nanosc Ab | Spin oscillator device |
| US9691458B2 (en) * | 2013-10-18 | 2017-06-27 | Cornell University | Circuits and devices based on spin hall effect to apply a spin transfer torque with a component perpendicular to the plane of magnetic layers |
| SE538342C2 (sv) * | 2014-04-09 | 2016-05-24 | Nanosc Ab | Spinnoscillator-anordning |
| CN106463610B (zh) * | 2014-06-18 | 2020-07-03 | 英特尔公司 | 具有可调强度的耦合自旋霍尔纳米振荡器 |
| WO2016011435A1 (en) * | 2014-07-17 | 2016-01-21 | Cornell University | Circuits and devices based on enhanced spin hall effect for efficient spin transfer torque |
| JP2016066634A (ja) * | 2014-09-22 | 2016-04-28 | 株式会社東芝 | 磁気論理素子、磁気論理回路、磁気メモリ |
| US9425738B2 (en) * | 2014-11-13 | 2016-08-23 | Regents Of The University Of Minnesota | Spin current generation with nano-oscillator |
| US9830966B2 (en) * | 2015-10-29 | 2017-11-28 | Western Digital Technologies, Inc. | Three terminal SOT memory cell with anomalous Hall effect |
| US10305026B2 (en) * | 2015-11-19 | 2019-05-28 | Samsung Electronics Co., Ltd. | Cross-point architecture for spin-transfer torque magnetoresistive random access memory with spin orbit writing |
| WO2017160893A1 (en) * | 2016-03-14 | 2017-09-21 | Purdue Research Foundation | Spin-transfer-torque synthetic anti-ferromagnetic switching device |
| US10333058B2 (en) * | 2016-03-17 | 2019-06-25 | Cornell University | Nanosecond-timescale low-error switching of 3-terminal magnetic tunnel junction circuits through dynamic in-plane-field assisted spin-hall effect |
-
2016
- 2016-11-02 SE SE1651446A patent/SE540812C2/sv unknown
-
2017
- 2017-10-27 JP JP2019545239A patent/JP7069190B2/ja active Active
- 2017-10-27 CN CN201780068307.7A patent/CN109906549A/zh active Pending
- 2017-10-27 US US16/346,652 patent/US10879453B2/en active Active
- 2017-10-27 WO PCT/SE2017/051057 patent/WO2018084774A1/en unknown
- 2017-10-27 EP EP17868262.1A patent/EP3535843A4/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP7069190B2 (ja) | 2022-05-17 |
| JP2020502821A (ja) | 2020-01-23 |
| EP3535843A1 (en) | 2019-09-11 |
| US10879453B2 (en) | 2020-12-29 |
| EP3535843A4 (en) | 2020-06-10 |
| US20190280191A1 (en) | 2019-09-12 |
| CN109906549A (zh) | 2019-06-18 |
| WO2018084774A1 (en) | 2018-05-11 |
| SE1651446A1 (sv) | 2018-05-03 |
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