RU97121905A - METHOD OF INSULATION WITH DROPS FOR SEMICONDUCTOR DEVICE - Google Patents

METHOD OF INSULATION WITH DROPS FOR SEMICONDUCTOR DEVICE

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Publication number
RU97121905A
RU97121905A RU97121905/28A RU97121905A RU97121905A RU 97121905 A RU97121905 A RU 97121905A RU 97121905/28 A RU97121905/28 A RU 97121905/28A RU 97121905 A RU97121905 A RU 97121905A RU 97121905 A RU97121905 A RU 97121905A
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RU
Russia
Prior art keywords
oxide film
grooves
insulation
grooves according
film
Prior art date
Application number
RU97121905/28A
Other languages
Russian (ru)
Other versions
RU2187174C2 (en
Inventor
Парк Мун-хан
Хонг Суг-хун
Син Ю-гюн
Original Assignee
Самсунг Электроникс Ко., Лтд.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019970035212A external-priority patent/KR100230431B1/en
Application filed by Самсунг Электроникс Ко., Лтд. filed Critical Самсунг Электроникс Ко., Лтд.
Publication of RU97121905A publication Critical patent/RU97121905A/en
Application granted granted Critical
Publication of RU2187174C2 publication Critical patent/RU2187174C2/en

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Claims (17)

1. Способ изоляции канавками для полупроводникового устройства, отличающийся тем, что изготавливают заполняющую канавки оксидную пленку, состоящую из композитной пленки, образованной двумя последовательно нанесенными слоями, имеющими различные характеристики напряжения, на полупроводниковой подложке, на которую нанесен трафаретный слой для того, чтобы обнажать район канавок на полупроводниковой подложке; повышают плотность заполняющей канавки оксидной пленки; выравнивают заполняющую канавки оксидную пленку, пока не обнажится верхняя поверхность трафаретного слоя; для того, чтобы получить заполняющий канавки слой в районе канавок.1. The method of insulation with grooves for a semiconductor device, characterized in that they produce an oxide film filling the grooves, consisting of a composite film formed by two successively deposited layers having different voltage characteristics, on a semiconductor substrate on which a screen layer is applied in order to expose the area grooves on a semiconductor substrate; increase the density of the filling groove of the oxide film; align the oxide film filling the grooves until the upper surface of the screen layer is exposed; in order to obtain a layer filling the grooves in the area of the grooves. 2. Способ изоляции канавками по п. 1, отличающийся тем, что композитную пленку получают путем последовательного нанесения друг на друга первой и второй оксидных пленок, которые имеют противоположные характеристики напряжения непосредственно после осаждения. 2. The method of insulation by grooves according to claim 1, characterized in that the composite film is obtained by sequentially depositing first and second oxide films on each other, which have opposite voltage characteristics immediately after deposition. 3. Способ изоляции канавками по п. 2, отличающийся тем, что первая и вторая оксидные пленки имеют характеристики растягивающего и сжимающего напряжения, соответственно. 3. The method of insulation with grooves according to claim 2, characterized in that the first and second oxide films have tensile and compressive stress characteristics, respectively. 4. Способ изоляции канавками по п. 3, отличающийся тем, что первую оксидную пленку изготавливают в виде оксидной пленки на основе тетра-этил-ортосиликата (ТЕОС)-O3, полученной способом химического осаждения из газовой фазы (ХОГ).4. The method of insulation by grooves according to claim 3, characterized in that the first oxide film is made in the form of an oxide film based on tetraethyl orthosilicate (TEOS) -O 3 obtained by chemical vapor deposition (CVD). 5. Способ изоляции канавками по п. 3, отличающийся тем, что вторую оксидную пленку изготавливают в виде пленки, выбираемой из группы, в которую входят оксидная пленка на основе ТЕОС, полученная способом плазменного ХОГ, оксидная пленка на основе SiH4, полученная способом плазменного ХОГ, и оксидная пленка, полученная при использовании высокоплотной плазмы.5. The method of insulation with grooves according to claim 3, characterized in that the second oxide film is made in the form of a film selected from the group consisting of an oxide film based on TEOS obtained by the plasma CVD method, an oxide film based on SiH 4 obtained by the plasma method COG, and oxide film obtained using high-density plasma. 6. Способ изоляции канавками по п. 2, отличающийся тем, что первая и вторая оксидные пленки имеют, соответственно, характеристики сжимающего и растягивающего напряжения. 6. The method of insulation with grooves according to claim 2, characterized in that the first and second oxide films have, respectively, compressive and tensile stress characteristics. 7. Способ изоляции канавками по п. 6, отличающийся тем, что первая оксидная пленка изготовлена в виде оксидной пленки, полученной при использовании высокоплотной плазмы. 7. The method of isolation by grooves according to claim 6, characterized in that the first oxide film is made in the form of an oxide film obtained using high-density plasma. 8. Способ изоляции канавками по п. 6, отличающийся тем, что вторая оксидная пленка изготовлена в виде оксидной пленки на основе ТЕОС-O3, полученной способом ХОГ.8. The method of isolation by grooves according to claim 6, characterized in that the second oxide film is made in the form of an oxide film based on TEOS-O 3 obtained by the method of COG. 9. Способ изоляции канавками по п. 1, отличающийся тем, что перед этапом изготовления заполняющей канавки оксидной пленки указанный способ включает в себя следующие этапы: на полупроводниковой подложке изготавливают трафаретный слой, обнажающий предварительно заданный район полупроводниковой подложки; проводят сухое травление обнаженного района полупроводниковой подложки на предварительно заданную глубину с использованием трафаретного слоя в качестве трафарета травления, до получения района канавок; изготавливают оксидную пленку на боковых стенках и донной поверхности района канавок. 9. The method of insulation with grooves according to claim 1, characterized in that before the step of manufacturing the filling groove of the oxide film, said method includes the following steps: a screen layer is made on the semiconductor substrate, exposing a predetermined region of the semiconductor substrate; conduct dry etching of the exposed region of the semiconductor substrate to a predetermined depth using the stencil layer as the etching stencil, until the area of the grooves is obtained; an oxide film is made on the side walls and the bottom surface of the groove region. 10. Способ изоляции канавками по п. 9, отличающийся тем, что указанный этап создания трафаретного слоя включает в себя следующие этапы: получают нижнюю оксидную пленку на полупроводниковой подложке; получают нитридную пленку на нижней оксидной пленке; последовательно переносят трафарет на нитридную пленку и на нижнюю оксидную пленку. 10. The method of insulation with grooves according to claim 9, characterized in that said step of creating a screen layer includes the following steps: a lower oxide film is formed on a semiconductor substrate; get a nitride film on the lower oxide film; sequentially transfer the stencil to the nitride film and to the lower oxide film. 11. Способ изоляции канавками по п. 10, отличающийся тем, что указанный способ далее включает в себя этап получения временной оксидной пленки на нитридной пленке после указанного этапа получения нитридной пленки, а также тем, что трафаретный слой получают путем последовательного перенесения трафарета на временную оксидную пленку, нитридную пленку и нижнюю оксидную пленку. 11. The method of isolation by grooves according to claim 10, characterized in that said method further includes the step of producing a temporary oxide film on a nitride film after said step of producing a nitride film, and also that the screen layer is obtained by sequentially transferring the screen to the temporary oxide film, nitride film and lower oxide film. 12. Способ изоляции канавками по п. 11, отличающийся тем, что временную оксидную пленку получают способом термоокисления. 12. The method of insulation with grooves according to claim 11, characterized in that the temporary oxide film is obtained by thermal oxidation. 13. Способ изоляции канавками по п. 9, отличающийся тем, что оксидную пленку получают на боковых стенках и на нижней поверхности района канавок способом термоокисления. 13. The method of insulation with grooves according to claim 9, characterized in that the oxide film is obtained on the side walls and on the lower surface of the groove area by thermal oxidation. 14. Способ изоляции канавками по п. 1, отличающийся тем, что указанный этап уплотнения заполняющей канавки оксидной пленки включает в себя термообработку заполняющей канавки оксидной пленки при температуре 1000 - 1200°С. 14. The method of insulation with grooves according to claim 1, characterized in that said step of sealing the filling groove of the oxide film includes heat treatment of the filling groove of the oxide film at a temperature of 1000-1200 ° C. 15. Способ изоляции канавками по п. 1, отличающийся тем, что указанный этап выравнивания заполняющей канавки оксидной пленки осуществляют с применением способа химико-механического полирования. 15. The method of isolation by grooves according to claim 1, characterized in that said step of leveling the filling groove of the oxide film is carried out using a chemical-mechanical polishing method. 16. Способ изоляции канавками по п. 1, отличающийся тем, что указанный этап выравнивания заполняющей канавки оксидной пленки осуществляют с применением способа обратного травления. 16. The method of isolation by grooves according to claim 1, characterized in that said step of leveling the filling groove of the oxide film is carried out using the reverse etching method. 17. Способ изоляции канавками по п. 1, отличающийся тем, что далее трафаретный слой удаляют с применением способа влажного травления после этапа получения заполняющего канавки слоя. 17. The method of insulation with grooves according to claim 1, characterized in that the screen layer is then removed using the wet etching method after the step of obtaining the layer filling the grooves.
RU97121905/28A 1997-07-25 1997-12-30 Method for insulating components of semiconductor devices by means of grooves RU2187174C2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR97-35212 1997-07-25
KR1019970035212A KR100230431B1 (en) 1997-07-25 1997-07-25 Method of forming trench isolation using two kinds of oxides films

Publications (2)

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RU97121905A true RU97121905A (en) 2000-01-10
RU2187174C2 RU2187174C2 (en) 2002-08-10

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US (1) US6037237A (en)
EP (1) EP0893824A3 (en)
JP (1) JP2935696B2 (en)
KR (1) KR100230431B1 (en)
CN (1) CN1128472C (en)
RU (1) RU2187174C2 (en)
TW (1) TW382774B (en)

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