RU2650807C9 - Слэб-лазер и усилитель и способ использования - Google Patents

Слэб-лазер и усилитель и способ использования Download PDF

Info

Publication number
RU2650807C9
RU2650807C9 RU2015102528A RU2015102528A RU2650807C9 RU 2650807 C9 RU2650807 C9 RU 2650807C9 RU 2015102528 A RU2015102528 A RU 2015102528A RU 2015102528 A RU2015102528 A RU 2015102528A RU 2650807 C9 RU2650807 C9 RU 2650807C9
Authority
RU
Russia
Prior art keywords
frequency range
crystal
laser
light
light energy
Prior art date
Application number
RU2015102528A
Other languages
English (en)
Russian (ru)
Other versions
RU2015102528A (ru
RU2650807C2 (ru
Inventor
Мартин А. СТЮАРТ
Стивен Л. КАННИНГЕМ
Original Assignee
Мартин А. СТЮАРТ
Стивен Л. КАННИНГЕМ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Мартин А. СТЮАРТ, Стивен Л. КАННИНГЕМ filed Critical Мартин А. СТЮАРТ
Publication of RU2015102528A publication Critical patent/RU2015102528A/ru
Application granted granted Critical
Publication of RU2650807C2 publication Critical patent/RU2650807C2/ru
Publication of RU2650807C9 publication Critical patent/RU2650807C9/ru

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/0602Crystal lasers or glass lasers
    • H01S3/0604Crystal lasers or glass lasers in the form of a plate or disc
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/0602Crystal lasers or glass lasers
    • H01S3/0606Crystal lasers or glass lasers with polygonal cross-section, e.g. slab, prism
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02Pretreatment of the material to be coated
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02194Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0071Beam steering, e.g. whereby a mirror outside the cavity is present to change the beam direction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02Constructional details
    • H01S3/04Arrangements for thermal management
    • H01S3/0407Liquid cooling, e.g. by water
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02Constructional details
    • H01S3/04Arrangements for thermal management
    • H01S3/042Arrangements for thermal management for solid state lasers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/0602Crystal lasers or glass lasers
    • H01S3/0615Shape of end-face
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/0619Coatings, e.g. AR, HR, passivation layer
    • H01S3/0621Coatings on the end-faces, e.g. input/output surfaces of the laser light
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08Construction or shape of optical resonators or components thereof
    • H01S3/08018Mode suppression
    • H01S3/08022Longitudinal modes
    • H01S3/08027Longitudinal modes by a filter, e.g. a Fabry-Perot filter is used for wavelength setting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08Construction or shape of optical resonators or components thereof
    • H01S3/08086Multiple-wavelength emission
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08Construction or shape of optical resonators or components thereof
    • H01S3/08095Zig-zag travelling beam through the active medium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • H01S3/092Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of flash lamp
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • H01S3/092Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of flash lamp
    • H01S3/093Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of flash lamp focusing or directing the excitation energy into the active medium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/1601Solid materials characterised by an active (lasing) ion
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/1601Solid materials characterised by an active (lasing) ion
    • H01S3/162Solid materials characterised by an active (lasing) ion transition metal
    • H01S3/1623Solid materials characterised by an active (lasing) ion transition metal chromium, e.g. Alexandrite
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/1601Solid materials characterised by an active (lasing) ion
    • H01S3/162Solid materials characterised by an active (lasing) ion transition metal
    • H01S3/1625Solid materials characterised by an active (lasing) ion transition metal titanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/163Solid materials characterised by a crystal matrix
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/163Solid materials characterised by a crystal matrix
    • H01S3/1631Solid materials characterised by a crystal matrix aluminate
    • H01S3/1633BeAl2O4, i.e. Chrysoberyl
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/163Solid materials characterised by a crystal matrix
    • H01S3/1631Solid materials characterised by a crystal matrix aluminate
    • H01S3/1636Al2O3 (Sapphire)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/163Solid materials characterised by a crystal matrix
    • H01S3/1666Solid materials characterised by a crystal matrix borate, carbonate, arsenide
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308Amplifier arrangements, e.g. MOPA
    • H01S3/2316Cascaded amplifiers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308Amplifier arrangements, e.g. MOPA
    • H01S3/2325Multi-pass amplifiers, e.g. regenerative amplifiers
    • H01S3/2333Double-pass amplifiers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/60Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122Basic optical elements, e.g. light-guiding paths
    • G02B6/1223Basic optical elements, e.g. light-guiding paths high refractive index type, i.e. high-contrast waveguides

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Lasers (AREA)
  • Laser Beam Processing (AREA)
RU2015102528A 2012-08-03 2013-08-01 Слэб-лазер и усилитель и способ использования RU2650807C9 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/566,144 US9246299B2 (en) 2011-08-04 2012-08-03 Slab laser and amplifier
US13/566,144 2012-08-03
PCT/US2013/053166 WO2014022635A1 (en) 2012-08-03 2013-08-01 Slab laser and amplifier and method of use

Publications (3)

Publication Number Publication Date
RU2015102528A RU2015102528A (ru) 2016-09-20
RU2650807C2 RU2650807C2 (ru) 2018-04-17
RU2650807C9 true RU2650807C9 (ru) 2018-09-06

Family

ID=49548573

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2015102528A RU2650807C9 (ru) 2012-08-03 2013-08-01 Слэб-лазер и усилитель и способ использования

Country Status (9)

Country Link
US (5) US9246299B2 (enExample)
EP (2) EP3185373B1 (enExample)
JP (2) JP6415435B2 (enExample)
CN (1) CN104604049B (enExample)
BR (1) BR112015002090B1 (enExample)
CA (1) CA2879746A1 (enExample)
IN (1) IN2015DN00970A (enExample)
RU (1) RU2650807C9 (enExample)
WO (1) WO2014022635A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2757834C1 (ru) * 2021-01-28 2021-10-21 Акционерное Общество "Наука И Инновации" Съемная кассета для усилительного модуля
RU236144U1 (ru) * 2024-12-03 2025-07-28 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" Широкополосный параметрический усилитель бегущей волны на основе микрополосковой линии передачи из тонкой пленки нитрида ниобия и германия

Families Citing this family (123)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9986663B2 (en) * 2013-01-29 2018-05-29 The United States Of America, As Represented By The Secretary Of The Navy High thermal conductivity materials for thermal management applications
KR102193150B1 (ko) * 2013-12-27 2020-12-21 삼성디스플레이 주식회사 증착 장치 및 이를 이용한 증착량 제어 방법
KR102192983B1 (ko) * 2014-01-15 2020-12-21 삼성디스플레이 주식회사 증착 장치 및 이를 이용한 증착 속도 산출 방법
WO2015175892A1 (en) 2014-05-16 2015-11-19 Divergent Microfactories, Inc. Modular formed nodes for vehicle chassis and their methods of use
RU2569904C1 (ru) * 2014-06-25 2015-12-10 Владимир Валентинович Павлов Лазерное устройство с пластинчатым оптическим элементом
CN117021566A (zh) 2014-07-02 2023-11-10 迪根特技术公司 用于制造接头构件的系统和方法
WO2016031727A1 (ja) * 2014-08-29 2016-03-03 国立研究開発法人産業技術総合研究所 有機材料膜又は有機無機複合材料膜のレーザー蒸着方法、レーザー蒸着装置
US10220471B2 (en) 2015-10-14 2019-03-05 Lawrence Livermore National Security, Llc Spatter reduction laser scanning strategy in selective laser melting
JP7499562B2 (ja) 2015-10-30 2024-06-14 シューラット テクノロジーズ,インク. 付加製造システム及び方法
EP3411170A4 (en) 2016-01-28 2020-02-12 Seurat Technologies, Inc. SYSTEM AND METHOD FOR ADDITIVE MANUFACTURING AND SPATIAL HEAT TREATMENT
WO2017132668A1 (en) * 2016-01-29 2017-08-03 Seurat Technologies, Inc. Additive manufacturing, bond modifying system and method
DE102016108474A1 (de) 2016-05-09 2017-11-09 Deutsches Zentrum für Luft- und Raumfahrt e.V. Festkörper, Laserverstärkungssystem und Festkörperlaser
WO2017204358A1 (ja) * 2016-05-27 2017-11-30 富士フイルム株式会社 固体レーザ装置
EP3468729A4 (en) 2016-06-09 2020-02-19 Divergent Technologies Inc. SYSTEMS AND METHODS FOR ARC AND KNOT DESIGN AND MANUFACTURE
CN106602391B (zh) * 2016-12-09 2019-04-30 中国人民解放军海军航空工程学院 一种具备波前畸变自校正能力的板条激光模块
US10759090B2 (en) 2017-02-10 2020-09-01 Divergent Technologies, Inc. Methods for producing panels using 3D-printed tooling shells
US11155005B2 (en) 2017-02-10 2021-10-26 Divergent Technologies, Inc. 3D-printed tooling and methods for producing same
US12251884B2 (en) 2017-04-28 2025-03-18 Divergent Technologies, Inc. Support structures in additive manufacturing
US10898968B2 (en) 2017-04-28 2021-01-26 Divergent Technologies, Inc. Scatter reduction in additive manufacturing
CN110869210B (zh) 2017-05-11 2022-09-13 速尔特技术有限公司 用于增材制造的图案化光的开关站射束路由
WO2018209226A1 (en) 2017-05-11 2018-11-15 Seurat Technologies, Inc. Solid state routing of patterned light for additive manufacturing optimization
US10703419B2 (en) 2017-05-19 2020-07-07 Divergent Technologies, Inc. Apparatus and methods for joining panels
US11358337B2 (en) 2017-05-24 2022-06-14 Divergent Technologies, Inc. Robotic assembly of transport structures using on-site additive manufacturing
US11123973B2 (en) 2017-06-07 2021-09-21 Divergent Technologies, Inc. Interconnected deflectable panel and node
US10919230B2 (en) 2017-06-09 2021-02-16 Divergent Technologies, Inc. Node with co-printed interconnect and methods for producing same
US10781846B2 (en) 2017-06-19 2020-09-22 Divergent Technologies, Inc. 3-D-printed components including fasteners and methods for producing same
US10994876B2 (en) 2017-06-30 2021-05-04 Divergent Technologies, Inc. Automated wrapping of components in transport structures
US11022375B2 (en) 2017-07-06 2021-06-01 Divergent Technologies, Inc. Apparatus and methods for additively manufacturing microtube heat exchangers
US10895315B2 (en) 2017-07-07 2021-01-19 Divergent Technologies, Inc. Systems and methods for implementing node to node connections in mechanized assemblies
US10751800B2 (en) 2017-07-25 2020-08-25 Divergent Technologies, Inc. Methods and apparatus for additively manufactured exoskeleton-based transport structures
US10940609B2 (en) 2017-07-25 2021-03-09 Divergent Technologies, Inc. Methods and apparatus for additively manufactured endoskeleton-based transport structures
US10605285B2 (en) 2017-08-08 2020-03-31 Divergent Technologies, Inc. Systems and methods for joining node and tube structures
US10357959B2 (en) 2017-08-15 2019-07-23 Divergent Technologies, Inc. Methods and apparatus for additively manufactured identification features
US11306751B2 (en) 2017-08-31 2022-04-19 Divergent Technologies, Inc. Apparatus and methods for connecting tubes in transport structures
US10960611B2 (en) 2017-09-06 2021-03-30 Divergent Technologies, Inc. Methods and apparatuses for universal interface between parts in transport structures
US11292058B2 (en) 2017-09-12 2022-04-05 Divergent Technologies, Inc. Apparatus and methods for optimization of powder removal features in additively manufactured components
US10814564B2 (en) 2017-10-11 2020-10-27 Divergent Technologies, Inc. Composite material inlay in additively manufactured structures
US10668816B2 (en) 2017-10-11 2020-06-02 Divergent Technologies, Inc. Solar extended range electric vehicle with panel deployment and emitter tracking
US10752986B2 (en) * 2017-10-30 2020-08-25 Savannah River Nuclear Solutions, Llc Method of manufacturing a three-dimensional carbon structure
US11786971B2 (en) 2017-11-10 2023-10-17 Divergent Technologies, Inc. Structures and methods for high volume production of complex structures using interface nodes
US10926599B2 (en) 2017-12-01 2021-02-23 Divergent Technologies, Inc. Suspension systems using hydraulic dampers
US11110514B2 (en) 2017-12-14 2021-09-07 Divergent Technologies, Inc. Apparatus and methods for connecting nodes to tubes in transport structures
US11085473B2 (en) 2017-12-22 2021-08-10 Divergent Technologies, Inc. Methods and apparatus for forming node to panel joints
US11534828B2 (en) 2017-12-27 2022-12-27 Divergent Technologies, Inc. Assembling structures comprising 3D printed components and standardized components utilizing adhesive circuits
US11420262B2 (en) 2018-01-31 2022-08-23 Divergent Technologies, Inc. Systems and methods for co-casting of additively manufactured interface nodes
US10751934B2 (en) 2018-02-01 2020-08-25 Divergent Technologies, Inc. Apparatus and methods for additive manufacturing with variable extruder profiles
US11224943B2 (en) 2018-03-07 2022-01-18 Divergent Technologies, Inc. Variable beam geometry laser-based powder bed fusion
US11267236B2 (en) 2018-03-16 2022-03-08 Divergent Technologies, Inc. Single shear joint for node-to-node connections
US11254381B2 (en) 2018-03-19 2022-02-22 Divergent Technologies, Inc. Manufacturing cell based vehicle manufacturing system and method
US11872689B2 (en) 2018-03-19 2024-01-16 Divergent Technologies, Inc. End effector features for additively manufactured components
US11408216B2 (en) 2018-03-20 2022-08-09 Divergent Technologies, Inc. Systems and methods for co-printed or concurrently assembled hinge structures
US11613078B2 (en) 2018-04-20 2023-03-28 Divergent Technologies, Inc. Apparatus and methods for additively manufacturing adhesive inlet and outlet ports
US11214317B2 (en) 2018-04-24 2022-01-04 Divergent Technologies, Inc. Systems and methods for joining nodes and other structures
US10682821B2 (en) 2018-05-01 2020-06-16 Divergent Technologies, Inc. Flexible tooling system and method for manufacturing of composite structures
US11020800B2 (en) 2018-05-01 2021-06-01 Divergent Technologies, Inc. Apparatus and methods for sealing powder holes in additively manufactured parts
US11389816B2 (en) 2018-05-09 2022-07-19 Divergent Technologies, Inc. Multi-circuit single port design in additively manufactured node
US10691104B2 (en) 2018-05-16 2020-06-23 Divergent Technologies, Inc. Additively manufacturing structures for increased spray forming resolution or increased fatigue life
US11590727B2 (en) 2018-05-21 2023-02-28 Divergent Technologies, Inc. Custom additively manufactured core structures
US11441586B2 (en) 2018-05-25 2022-09-13 Divergent Technologies, Inc. Apparatus for injecting fluids in node based connections
US11035511B2 (en) 2018-06-05 2021-06-15 Divergent Technologies, Inc. Quick-change end effector
US11292056B2 (en) 2018-07-06 2022-04-05 Divergent Technologies, Inc. Cold-spray nozzle
CN108963740B (zh) * 2018-07-09 2019-08-09 北京空间机电研究所 一种板条固体激光器泵浦增益模块
US11269311B2 (en) 2018-07-26 2022-03-08 Divergent Technologies, Inc. Spray forming structural joints
US10836120B2 (en) 2018-08-27 2020-11-17 Divergent Technologies, Inc . Hybrid composite structures with integrated 3-D printed elements
US11433557B2 (en) 2018-08-28 2022-09-06 Divergent Technologies, Inc. Buffer block apparatuses and supporting apparatuses
US11826953B2 (en) 2018-09-12 2023-11-28 Divergent Technologies, Inc. Surrogate supports in additive manufacturing
US11072371B2 (en) 2018-10-05 2021-07-27 Divergent Technologies, Inc. Apparatus and methods for additively manufactured structures with augmented energy absorption properties
US11260582B2 (en) 2018-10-16 2022-03-01 Divergent Technologies, Inc. Methods and apparatus for manufacturing optimized panels and other composite structures
US12115583B2 (en) 2018-11-08 2024-10-15 Divergent Technologies, Inc. Systems and methods for adhesive-based part retention features in additively manufactured structures
US12194536B2 (en) 2018-11-13 2025-01-14 Divergent Technologies, Inc. 3-D printer with manifolds for gas exchange
US11504912B2 (en) 2018-11-20 2022-11-22 Divergent Technologies, Inc. Selective end effector modular attachment device
USD911222S1 (en) 2018-11-21 2021-02-23 Divergent Technologies, Inc. Vehicle and/or replica
US12011873B2 (en) 2018-12-14 2024-06-18 Seurat Technologies, Inc. Additive manufacturing system for object creation from powder using a high flux laser for two-dimensional printing
US10663110B1 (en) 2018-12-17 2020-05-26 Divergent Technologies, Inc. Metrology apparatus to facilitate capture of metrology data
US11529741B2 (en) 2018-12-17 2022-12-20 Divergent Technologies, Inc. System and method for positioning one or more robotic apparatuses
US11449021B2 (en) 2018-12-17 2022-09-20 Divergent Technologies, Inc. Systems and methods for high accuracy fixtureless assembly
KR102719019B1 (ko) 2018-12-19 2024-10-18 쇠라 테크널러지스 인코포레이티드 2차원 인쇄를 위해 펄스 변조 레이저를 사용하는 적층 제조 시스템
US11885000B2 (en) 2018-12-21 2024-01-30 Divergent Technologies, Inc. In situ thermal treatment for PBF systems
US20200232070A1 (en) 2019-01-18 2020-07-23 Divergent Technologies, Inc. Aluminum alloy compositions
JP7341673B2 (ja) * 2019-02-27 2023-09-11 三菱重工業株式会社 レーザ装置
US11203240B2 (en) 2019-04-19 2021-12-21 Divergent Technologies, Inc. Wishbone style control arm assemblies and methods for producing same
US12314031B1 (en) 2019-06-27 2025-05-27 Divergent Technologies, Inc. Incorporating complex geometric features in additively manufactured parts
US12280554B2 (en) 2019-11-21 2025-04-22 Divergent Technologies, Inc. Fixtureless robotic assembly
CN112886378A (zh) * 2019-11-29 2021-06-01 山东大学 一种590nm波段拉曼倍频光源泵浦的翠绿宝石被动锁模激光器
EP4088289A4 (en) 2020-01-06 2024-03-20 Battelle Energy Alliance, LLC SOLID-STATE NUCLEAR PUMPED LASER EMISSION SENSORS FOR MEASURING BATTERY REACTOR POWER AND FLOW, DIRECT ENERGY CONVERSION, AND ASSOCIATED METHODS
US11912339B2 (en) 2020-01-10 2024-02-27 Divergent Technologies, Inc. 3-D printed chassis structure with self-supporting ribs
US11590703B2 (en) 2020-01-24 2023-02-28 Divergent Technologies, Inc. Infrared radiation sensing and beam control in electron beam additive manufacturing
US12194674B2 (en) 2020-02-14 2025-01-14 Divergent Technologies, Inc. Multi-material powder bed fusion 3-D printer
US11884025B2 (en) 2020-02-14 2024-01-30 Divergent Technologies, Inc. Three-dimensional printer and methods for assembling parts via integration of additive and conventional manufacturing operations
US11479015B2 (en) 2020-02-14 2022-10-25 Divergent Technologies, Inc. Custom formed panels for transport structures and methods for assembling same
US12203397B2 (en) 2020-02-18 2025-01-21 Divergent Technologies, Inc. Impact energy absorber with integrated engine exhaust noise muffler
CN111293579B (zh) * 2020-02-21 2021-07-27 中国航空制造技术研究院 一种用于板条激光晶体的双面水冷装置
US11535322B2 (en) 2020-02-25 2022-12-27 Divergent Technologies, Inc. Omni-positional adhesion device
US11421577B2 (en) 2020-02-25 2022-08-23 Divergent Technologies, Inc. Exhaust headers with integrated heat shielding and thermal syphoning
US12337541B2 (en) 2020-02-27 2025-06-24 Divergent Technologies, Inc. Powder bed fusion additive manufacturing system with desiccant positioned within hopper and ultrasonic transducer
US11413686B2 (en) 2020-03-06 2022-08-16 Divergent Technologies, Inc. Methods and apparatuses for sealing mechanisms for realizing adhesive connections with additively manufactured components
US12088055B2 (en) * 2020-04-10 2024-09-10 Seurat Technologies, Inc. Fluid edge cladding for spectroscopic absorption of laser emissions and amplified spontaneous emission
US20210316502A1 (en) * 2020-04-10 2021-10-14 Seurat Technologies, Inc. High Throughput Additive Manufacturing System Supporting Absorption Of Amplified Spontaneous Emission In Laser Amplifiers
JP2023535255A (ja) 2020-06-10 2023-08-17 ダイバージェント テクノロジーズ, インコーポレイテッド 適応型生産システム
US11850804B2 (en) 2020-07-28 2023-12-26 Divergent Technologies, Inc. Radiation-enabled retention features for fixtureless assembly of node-based structures
US11806941B2 (en) 2020-08-21 2023-11-07 Divergent Technologies, Inc. Mechanical part retention features for additively manufactured structures
US12314036B2 (en) 2020-09-08 2025-05-27 Divergent Technologies, Inc. Assembly sequence generation
CN116669885A (zh) 2020-09-22 2023-08-29 戴弗根特技术有限公司 用于球磨以生产用于增材制造的粉末的方法和设备
US12220819B2 (en) 2020-10-21 2025-02-11 Divergent Technologies, Inc. 3-D printed metrology feature geometry and detection
US12162074B2 (en) 2020-11-25 2024-12-10 Lawrence Livermore National Security, Llc System and method for large-area pulsed laser melting of metallic powder in a laser powder bed fusion application
US12311612B2 (en) 2020-12-18 2025-05-27 Divergent Technologies, Inc. Direct inject joint architecture enabled by quick cure adhesive
US12083596B2 (en) 2020-12-21 2024-09-10 Divergent Technologies, Inc. Thermal elements for disassembly of node-based adhesively bonded structures
US12226824B2 (en) 2020-12-22 2025-02-18 Divergent Technologies, Inc. Three dimensional printer with configurable build plate for rapid powder removal
US11872626B2 (en) 2020-12-24 2024-01-16 Divergent Technologies, Inc. Systems and methods for floating pin joint design
US11947335B2 (en) 2020-12-30 2024-04-02 Divergent Technologies, Inc. Multi-component structure optimization for combining 3-D printed and commercially available parts
US11928966B2 (en) 2021-01-13 2024-03-12 Divergent Technologies, Inc. Virtual railroad
US12459377B2 (en) 2021-01-19 2025-11-04 Divergent Technologies, Inc. Energy unit cells for primary vehicle structure
US12249812B2 (en) 2021-01-19 2025-03-11 Divergent Technologies, Inc. Bus bars for printed structural electric battery modules
EP4304865A4 (en) 2021-03-09 2025-06-25 Divergent Technologies, Inc. Rotational additive manufacturing systems and methods
WO2022226411A1 (en) 2021-04-23 2022-10-27 Divergent Technologies, Inc. Removal of supports, and other materials from surface, and within hollow 3d printed parts
US12138772B2 (en) 2021-04-30 2024-11-12 Divergent Technologies, Inc. Mobile parts table
US12365965B2 (en) 2021-07-01 2025-07-22 Divergent Technologies, Inc. Al—Mg—Si based near-eutectic alloy composition for high strength and stiffness applications
US11865617B2 (en) 2021-08-25 2024-01-09 Divergent Technologies, Inc. Methods and apparatuses for wide-spectrum consumption of output of atomization processes across multi-process and multi-scale additive manufacturing modalities
CN113991397B (zh) * 2021-10-28 2023-06-27 河北工业大学 一种固体激光阵列放大器
US12351238B2 (en) 2021-11-02 2025-07-08 Divergent Technologies, Inc. Motor nodes
US12152629B2 (en) 2022-01-25 2024-11-26 Divergent Technologies, Inc. Attachment structure having a connection member with multiple attachment features
CN114779373B (zh) * 2022-03-14 2024-03-26 清华大学 光功率分束器及其制备方法
CN119275690A (zh) * 2024-12-09 2025-01-07 厦门纽立特电子科技有限公司 一种高功率板条激光放大器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4769823A (en) * 1985-12-31 1988-09-06 General Electric Company Laser system with trivalent chromium doped aluminum tungstate fluorescent converter
DE4220158A1 (de) * 1992-06-19 1993-12-23 Battelle Institut E V Verfahren zur selektiven Abscheidung von Aluminiumstrukturen aus der Gasphase
RU8168U1 (ru) * 1997-11-28 1998-10-16 Валерий Геннадиевич Полушкин Активный лазерный элемент с волноводным режимом работы
US6347101B1 (en) * 1998-04-16 2002-02-12 3D Systems, Inc. Laser with absorption optimized pumping of a gain medium
EP1646117A2 (en) * 2000-05-30 2006-04-12 Northrop Grumman Corporation Optical amplifier comprising an end pumped zig-zag slab gain medium

Family Cites Families (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3631362A (en) 1968-08-27 1971-12-28 Gen Electric Face-pumped, face-cooled laser device
US3633126A (en) 1969-04-17 1972-01-04 Gen Electric Multiple internal reflection face-pumped laser
US3766490A (en) * 1972-03-14 1973-10-16 Us Army Lu:nd:yag laser system and material
AU1363076A (en) * 1976-05-04 1977-11-10 Ward H Laser amplification
US4734917A (en) * 1985-12-31 1988-03-29 General Electric Company Fluorescent converter pumped cavity for laser system
US4794616A (en) * 1985-12-31 1988-12-27 General Electric Company Laser system with solid state fluorescent converter matrix having distributed fluorescent converter particles
US4838243A (en) 1987-04-17 1989-06-13 Stephen Kuber Chimney cleanout tee cap lock
US4858243A (en) * 1987-06-12 1989-08-15 Raycon Corporation Laser pumping cavity
JP2586110B2 (ja) * 1988-06-30 1997-02-26 三菱電機株式会社 固体レーザ装置
IL87370A (en) 1988-08-08 1992-03-29 Electro Optics Ind Ltd Laser pumping cavity
JPH03190293A (ja) 1989-12-20 1991-08-20 Hoya Corp スラブ型レーザ媒体
JPH04137573A (ja) 1990-09-27 1992-05-12 Hoya Corp コンポジットスラブレーザ媒体及びレーザ装置
US5659567A (en) * 1992-02-19 1997-08-19 Roberts; Rosemary Szewjkowski Microwave-driven UV light source and solid-state laser
JPH05254879A (ja) * 1992-03-06 1993-10-05 Seiko Epson Corp 蛍光ガラス及びそれを用いたレーザー装置
JPH06125125A (ja) * 1992-05-12 1994-05-06 Mitsubishi Electric Corp 固体レーザ装置
US5299220A (en) 1992-09-08 1994-03-29 Brown David C Slab laser
US5305345A (en) 1992-09-25 1994-04-19 The United States Of America As Represented By The United States Department Of Energy Zigzag laser with reduced optical distortion
US5581573A (en) * 1993-04-15 1996-12-03 Fuji Electric Co., Ltd. Solid-state laser device with diffused-light excitation, and integrating sphere
JPH06350171A (ja) * 1993-04-15 1994-12-22 Fuji Electric Co Ltd 固体レーザ装置および積分球
WO1994024734A1 (en) 1993-04-21 1994-10-27 The Commonwealth Of Australia Diode pumped slab laser
US5394427A (en) 1994-04-29 1995-02-28 Cutting Edge Optronics, Inc. Housing for a slab laser pumped by a close-coupled light source
US5553092A (en) * 1994-05-17 1996-09-03 Alliedsignal Inc. Solid state laser with integral optical diffuser plate to homogenize optical pumping
US5479430A (en) 1995-02-07 1995-12-26 The Board Of Trustees Of The Leland Stanford Junior University Protective coating for solid state slab lasers
JPH0927646A (ja) * 1995-07-12 1997-01-28 Hitachi Ltd スラブレーザ
DE19541020A1 (de) 1995-11-03 1997-05-07 Daimler Benz Ag Laserverstärkersystem
JPH09199781A (ja) * 1996-01-16 1997-07-31 Nec Corp レーザ増幅器
US5832016A (en) 1997-01-29 1998-11-03 Northrop Grumman Corporation Slab laser assembly
US6014391A (en) 1997-12-19 2000-01-11 Raytheon Company Thermally improved slab laser pump cavity apparatus with integral concentrator and method of making same
JPH11220191A (ja) * 1998-01-29 1999-08-10 Miyachi Technos Corp 固体レーザ装置
US6134258A (en) * 1998-03-25 2000-10-17 The Board Of Trustees Of The Leland Stanford Junior University Transverse-pumped sLAB laser/amplifier
JP3154689B2 (ja) * 1998-05-26 2001-04-09 三菱重工業株式会社 半導体レーザ励起スラブ固体レーザ装置
US6219361B1 (en) 1999-06-21 2001-04-17 Litton Systems, Inc. Side pumped, Q-switched microlaser
US6356575B1 (en) 1999-07-06 2002-03-12 Raytheon Company Dual cavity multifunction laser system
US6373866B1 (en) 2000-01-26 2002-04-16 Lumenis Inc. Solid-state laser with composite prismatic gain-region
US6738399B1 (en) 2001-05-17 2004-05-18 The United States Of America As Represented By The United States Department Of Energy Microchannel cooled edge cladding to establish an adiabatic boundary condition in a slab laser
US7065121B2 (en) 2001-07-24 2006-06-20 Gsi Group Ltd. Waveguide architecture, waveguide devices for laser processing and beam control, and laser processing applications
US20030138021A1 (en) 2001-10-25 2003-07-24 Norman Hodgson Diode-pumped solid-state thin slab laser
KR20040105244A (ko) * 2002-04-26 2004-12-14 스미토모 덴키 고교 가부시키가이샤 산화물 초전도 박막의 제조방법
US7065109B2 (en) * 2002-05-08 2006-06-20 Melles Griot Inc. Laser with narrow bandwidth antireflection filter for frequency selection
TWI270918B (en) * 2003-05-27 2007-01-11 Ip2H Ag Light source and method for supplying a transport function to a chemical element in a light source
US7257302B2 (en) * 2003-06-03 2007-08-14 Imra America, Inc. In-line, high energy fiber chirped pulse amplification system
US7520790B2 (en) * 2003-09-19 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
JP4754795B2 (ja) * 2003-09-19 2011-08-24 株式会社半導体エネルギー研究所 表示装置及び表示装置の作製方法
US7388895B2 (en) 2003-11-21 2008-06-17 Tsinghua University Corner-pumping method and gain module for high power slab laser
US7376160B2 (en) 2003-11-24 2008-05-20 Raytheon Company Slab laser and method with improved and directionally homogenized beam quality
JP3899411B2 (ja) 2004-02-19 2007-03-28 独立行政法人情報通信研究機構 3つの反射面による多重反射で構成される光路を用いたスラブ型固体レーザ媒体、またはスラブ型非線形光学媒体
JP2005294625A (ja) * 2004-04-01 2005-10-20 Sony Corp 成膜装置
US7123634B2 (en) 2004-05-07 2006-10-17 Northrop Grumman Corporation Zig-zag laser amplifier with polarization controlled reflectors
US7039087B2 (en) 2004-05-13 2006-05-02 The United States Of America As Represented By The Department Of The Army End pumped slab laser cavity
US7879410B2 (en) * 2004-06-09 2011-02-01 Imra America, Inc. Method of fabricating an electrochemical device using ultrafast pulsed laser deposition
GB0418333D0 (en) 2004-08-17 2004-09-22 Cambridge Display Tech Ltd Enhanced emission of light from organic light emitting diodes
US7280571B2 (en) 2004-11-23 2007-10-09 Northrop Grumman Corporation Scalable zig-zag laser amplifier
US7590160B2 (en) 2004-11-26 2009-09-15 Manni Jeffrey G High-gain diode-pumped laser amplifier
US7505499B2 (en) 2004-12-15 2009-03-17 Panasonic Corporation Slab laser amplifier with parasitic oscillation suppression
US8599898B2 (en) 2004-12-22 2013-12-03 Universal Laser Systems, Inc. Slab laser with composite resonator and method of producing high-energy laser radiation
FI20050216A0 (fi) * 2005-02-23 2005-02-23 Ruuttu Jari Menetelmä valmistaa timanttia, muita jalokiviä, kuten safiiria, rubiinia jne. ja suorittaa näillä pinnoituksia sekä suorittaa pinnoituksia muilla aineilla, kuten boriideillä, oksideillä, nitrideillä jne.
US7542489B2 (en) 2005-03-25 2009-06-02 Pavilion Integration Corporation Injection seeding employing continuous wavelength sweeping for master-slave resonance
JP2006307251A (ja) * 2005-04-27 2006-11-09 Kobe Univ ダイヤモンドライクカーボン薄膜の作製方法
US7386019B2 (en) * 2005-05-23 2008-06-10 Time-Bandwidth Products Ag Light pulse generating apparatus and method
JP4883503B2 (ja) 2005-06-21 2012-02-22 独立行政法人情報通信研究機構 多重光路の固体スラブレーザロッドまたは非線形光学結晶を用いたレーザ装置
US7391558B2 (en) 2005-10-19 2008-06-24 Raytheon Company Laser amplifier power extraction enhancement system and method
US7860142B2 (en) * 2006-02-07 2010-12-28 Raytheon Company Laser with spectral converter
KR20070117738A (ko) * 2006-06-09 2007-12-13 삼성전자주식회사 표시기판의 리페어 방법 및 이에 의해 리페어된 표시기판
US7929579B2 (en) 2006-08-02 2011-04-19 Cynosure, Inc. Picosecond laser apparatus and methods for its operation and use
US20080089369A1 (en) 2006-10-16 2008-04-17 Pavilion Integration Corporation Injection seeding employing continuous wavelength sweeping for master-slave resonance
US20080116183A1 (en) * 2006-11-21 2008-05-22 Palo Alto Research Center Incorporated Light Scanning Mechanism For Scan Displacement Invariant Laser Ablation Apparatus
RU2346380C1 (ru) * 2007-07-17 2009-02-10 Общество с ограниченной ответственностью "Мармирус" Емкостной генератор тока
EP2065485B1 (en) * 2007-11-21 2011-05-18 OTB Solar B.V. Method and system for continuous or semi-continuous laser deposition.
US7633979B2 (en) 2008-02-12 2009-12-15 Pavilion Integration Corporation Method and apparatus for producing UV laser from all-solid-state system
JP5305758B2 (ja) 2008-06-30 2013-10-02 株式会社東芝 半導体発光装置
US7822091B2 (en) 2008-07-14 2010-10-26 Lockheed Martin Corporation Inverted composite slab sandwich laser gain medium
JP4910010B2 (ja) 2009-03-24 2012-04-04 株式会社東芝 半導体発光装置
TWM370095U (en) 2009-06-30 2009-12-01 Acpa Energy Conversion Devices Co Ltd Wave length modulating apparatus for light source
EP2621736A4 (en) * 2010-10-01 2016-03-02 Intelligent Material Solutions Inc MORPHOLOGICAL AND SIZE-UNIFORM MONODISPERSION PARTICLES AND THEIR FORMED SELF-ASSEMBLY
US8908737B2 (en) 2011-04-04 2014-12-09 Coherent, Inc. Transition-metal-doped thin-disk laser
US8774236B2 (en) 2011-08-17 2014-07-08 Veralas, Inc. Ultraviolet fiber laser system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4769823A (en) * 1985-12-31 1988-09-06 General Electric Company Laser system with trivalent chromium doped aluminum tungstate fluorescent converter
DE4220158A1 (de) * 1992-06-19 1993-12-23 Battelle Institut E V Verfahren zur selektiven Abscheidung von Aluminiumstrukturen aus der Gasphase
RU8168U1 (ru) * 1997-11-28 1998-10-16 Валерий Геннадиевич Полушкин Активный лазерный элемент с волноводным режимом работы
US6347101B1 (en) * 1998-04-16 2002-02-12 3D Systems, Inc. Laser with absorption optimized pumping of a gain medium
EP1646117A2 (en) * 2000-05-30 2006-04-12 Northrop Grumman Corporation Optical amplifier comprising an end pumped zig-zag slab gain medium

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2757834C1 (ru) * 2021-01-28 2021-10-21 Акционерное Общество "Наука И Инновации" Съемная кассета для усилительного модуля
RU236144U1 (ru) * 2024-12-03 2025-07-28 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" Широкополосный параметрический усилитель бегущей волны на основе микрополосковой линии передачи из тонкой пленки нитрида ниобия и германия

Also Published As

Publication number Publication date
EP3185373B1 (en) 2021-04-07
CA2879746A1 (en) 2014-02-06
JP6743087B2 (ja) 2020-08-19
JP2015528217A (ja) 2015-09-24
US20130301662A1 (en) 2013-11-14
US20160043524A1 (en) 2016-02-11
US9246299B2 (en) 2016-01-26
US9525262B2 (en) 2016-12-20
BR112015002090B1 (pt) 2021-05-25
EP3185373A1 (en) 2017-06-28
BR112015002090A2 (pt) 2017-07-04
US10777960B2 (en) 2020-09-15
CN104604049A (zh) 2015-05-06
US20150311064A1 (en) 2015-10-29
RU2015102528A (ru) 2016-09-20
US20170070022A1 (en) 2017-03-09
US20160211637A1 (en) 2016-07-21
CN104604049B (zh) 2019-08-13
EP2880722A4 (en) 2016-04-27
US9287112B2 (en) 2016-03-15
EP2880722A1 (en) 2015-06-10
IN2015DN00970A (enExample) 2015-06-12
EP2880722B1 (en) 2019-10-09
JP6415435B2 (ja) 2018-10-31
RU2650807C2 (ru) 2018-04-17
JP2018164090A (ja) 2018-10-18
WO2014022635A1 (en) 2014-02-06

Similar Documents

Publication Publication Date Title
RU2650807C9 (ru) Слэб-лазер и усилитель и способ использования
WO2010145855A1 (en) Monolithic, side pumped solid-state laser and method for operating the same
Hein et al. POLARIS: an all diode-pumped ultrahigh peak power laser for high repetition rates
CA3045019A1 (en) High-power, rare-earth-doped crystal amplifier based on ultra-low-quantum-defect pumping scheme utilizing single or low-mode fiber lasers
US20070133643A1 (en) Effective excitation, optical energy extraction and beamlet stacking in a multi-channel radial array laser system
Erickson Flashlamp-pumped titanium: sapphire laser
Li et al. Diode laser in-band pumped, efficient 1645 nm continuous-wave and Q-switched Er: YLuAG lasers with near-diffraction-limited beam quality
Basiev et al. Use of a LiF colour centre laser for pumping an Yb: YAG active medium
Koechner Optical pump systems
Qi et al. Experimental study of Ti: sapphire laser end-pumped Nd: YAG ceramic laserQ-switchedby Cr4+: YAG saturable absorber
Liu Research Progress of LD Pumped Yb: YAG Solid-State Laser [A]
Prelas et al. Nuclear-Driven Solid-State Lasers for Inertial Confinement Fusion
Ji et al. Comparison of laser performance of electro-optic Q-switched Nd: YAG ceramic/single crystal laser
Topfer et al. Scaling laser-diode pumped solid-state amplifiers to the petawatt level
Batishche et al. A powerful, repetitively pulsed 1444-nm Nd: YAG laser
Demske Master-Oscillator-Power-Amplifier (MOPA) Laser Sources Used as Drive Lasers for Photoinjectors for High-Gain, Free Electron Lasers (FELs)
KR20160093801A (ko) 편광변환기를 포함한 고휘도 극초단 빔 발생 펨토초 레이저 장치
Prelas et al. Fusion Studies Laboratory, University of Missouri-Columbia 323 Electrical Engineering, Columbia, MO 65211 USA
Dowell Advances in cathodes for high-current rf photoinjectors
Pittman et al. Near diffraction limited 100 TW-10 Hz femtosecond laser. New approaches towards ultra-high intensities
Eichler et al. New diode-pumped 2.8/spl mu/m Er/sup 3+: BaLu/sub 2/F/sub 8/laser
Kaskow et al. Compact diode-side-pumped Yb: YAG slab laser operating in room temperature
Sarukura et al. FRONTIERS in SCIENCE and TECHNOLOGY
Hogan 3 Laser drivers: KrF, solid state, 8.4 Fast ignition lasers for laser-driven IFE: 8 Inertial confinement fusion: laser
Savitski et al. Passive Q-switching of 1.35 μm diode-pumped Nd: KGW laser with PbS-doped silicate glasses

Legal Events

Date Code Title Description
TH4A Reissue of patent specification