CA2879746A1 - Slab laser and amplifier and method of use - Google Patents
Slab laser and amplifier and method of use Download PDFInfo
- Publication number
- CA2879746A1 CA2879746A1 CA2879746A CA2879746A CA2879746A1 CA 2879746 A1 CA2879746 A1 CA 2879746A1 CA 2879746 A CA2879746 A CA 2879746A CA 2879746 A CA2879746 A CA 2879746A CA 2879746 A1 CA2879746 A1 CA 2879746A1
- Authority
- CA
- Canada
- Prior art keywords
- slab
- slab crystal
- laser
- light
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0606—Crystal lasers or glass lasers with polygonal cross-section, e.g. slab, prism
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
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- H—ELECTRICITY
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- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
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| US13/566,144 US9246299B2 (en) | 2011-08-04 | 2012-08-03 | Slab laser and amplifier |
| US13/566,144 | 2012-08-03 | ||
| PCT/US2013/053166 WO2014022635A1 (en) | 2012-08-03 | 2013-08-01 | Slab laser and amplifier and method of use |
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| CA2879746A1 true CA2879746A1 (en) | 2014-02-06 |
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| KR102193150B1 (ko) * | 2013-12-27 | 2020-12-21 | 삼성디스플레이 주식회사 | 증착 장치 및 이를 이용한 증착량 제어 방법 |
| KR102192983B1 (ko) * | 2014-01-15 | 2020-12-21 | 삼성디스플레이 주식회사 | 증착 장치 및 이를 이용한 증착 속도 산출 방법 |
| WO2015175892A1 (en) | 2014-05-16 | 2015-11-19 | Divergent Microfactories, Inc. | Modular formed nodes for vehicle chassis and their methods of use |
| RU2569904C1 (ru) * | 2014-06-25 | 2015-12-10 | Владимир Валентинович Павлов | Лазерное устройство с пластинчатым оптическим элементом |
| CN117021566A (zh) | 2014-07-02 | 2023-11-10 | 迪根特技术公司 | 用于制造接头构件的系统和方法 |
| WO2016031727A1 (ja) * | 2014-08-29 | 2016-03-03 | 国立研究開発法人産業技術総合研究所 | 有機材料膜又は有機無機複合材料膜のレーザー蒸着方法、レーザー蒸着装置 |
| US10220471B2 (en) | 2015-10-14 | 2019-03-05 | Lawrence Livermore National Security, Llc | Spatter reduction laser scanning strategy in selective laser melting |
| JP7499562B2 (ja) | 2015-10-30 | 2024-06-14 | シューラット テクノロジーズ,インク. | 付加製造システム及び方法 |
| EP3411170A4 (en) | 2016-01-28 | 2020-02-12 | Seurat Technologies, Inc. | SYSTEM AND METHOD FOR ADDITIVE MANUFACTURING AND SPATIAL HEAT TREATMENT |
| WO2017132668A1 (en) * | 2016-01-29 | 2017-08-03 | Seurat Technologies, Inc. | Additive manufacturing, bond modifying system and method |
| DE102016108474A1 (de) | 2016-05-09 | 2017-11-09 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Festkörper, Laserverstärkungssystem und Festkörperlaser |
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2012
- 2012-08-03 US US13/566,144 patent/US9246299B2/en not_active Expired - Fee Related
-
2013
- 2013-08-01 CN CN201380046502.1A patent/CN104604049B/zh not_active Expired - Fee Related
- 2013-08-01 CA CA2879746A patent/CA2879746A1/en not_active Abandoned
- 2013-08-01 IN IN970DEN2015 patent/IN2015DN00970A/en unknown
- 2013-08-01 EP EP17152815.1A patent/EP3185373B1/en active Active
- 2013-08-01 RU RU2015102528A patent/RU2650807C9/ru active
- 2013-08-01 JP JP2015525585A patent/JP6415435B2/ja not_active Expired - Fee Related
- 2013-08-01 BR BR112015002090-9A patent/BR112015002090B1/pt not_active IP Right Cessation
- 2013-08-01 US US14/418,500 patent/US9287112B2/en not_active Expired - Fee Related
- 2013-08-01 WO PCT/US2013/053166 patent/WO2014022635A1/en not_active Ceased
- 2013-08-01 EP EP13824767.1A patent/EP2880722B1/en active Active
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2015
- 2015-10-23 US US14/921,285 patent/US10777960B2/en not_active Expired - Fee Related
-
2016
- 2016-03-14 US US15/068,950 patent/US9525262B2/en not_active Expired - Fee Related
- 2016-11-10 US US15/348,321 patent/US20170070022A1/en not_active Abandoned
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2018
- 2018-05-15 JP JP2018093437A patent/JP6743087B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP3185373B1 (en) | 2021-04-07 |
| JP6743087B2 (ja) | 2020-08-19 |
| JP2015528217A (ja) | 2015-09-24 |
| RU2650807C9 (ru) | 2018-09-06 |
| US20130301662A1 (en) | 2013-11-14 |
| US20160043524A1 (en) | 2016-02-11 |
| US9246299B2 (en) | 2016-01-26 |
| US9525262B2 (en) | 2016-12-20 |
| BR112015002090B1 (pt) | 2021-05-25 |
| EP3185373A1 (en) | 2017-06-28 |
| BR112015002090A2 (pt) | 2017-07-04 |
| US10777960B2 (en) | 2020-09-15 |
| CN104604049A (zh) | 2015-05-06 |
| US20150311064A1 (en) | 2015-10-29 |
| RU2015102528A (ru) | 2016-09-20 |
| US20170070022A1 (en) | 2017-03-09 |
| US20160211637A1 (en) | 2016-07-21 |
| CN104604049B (zh) | 2019-08-13 |
| EP2880722A4 (en) | 2016-04-27 |
| US9287112B2 (en) | 2016-03-15 |
| EP2880722A1 (en) | 2015-06-10 |
| IN2015DN00970A (enExample) | 2015-06-12 |
| EP2880722B1 (en) | 2019-10-09 |
| JP6415435B2 (ja) | 2018-10-31 |
| RU2650807C2 (ru) | 2018-04-17 |
| JP2018164090A (ja) | 2018-10-18 |
| WO2014022635A1 (en) | 2014-02-06 |
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| EEER | Examination request |
Effective date: 20180718 |
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| FZDE | Discontinued |
Effective date: 20211109 |